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1. 发明专利

JPWO2006129574A1 カリックスレゾルシナレン化合物、並びに、それからなるフォトレジスト基材及びその組成物有权
公开(公告)号：JPWO2006129574A1
公开(公告)日：2009-01-08
申请号：JP2007518951
申请日：2006-05-26
申请人：博雄木下 , 博雄木下 , 健夫渡邊 , 健夫渡邊 , 出光興産株式会社
发明人：博雄木下 , 博雄木下 , 健夫渡邊 , 健夫渡邊 , 宏寿石井 , 宏寿石井 , 貴紀大和田 , 貴紀大和田
IPC分类号： C07C69/736 , G03F7/039 , H01L21/027
CPC分类号： C07C69/736 , C07C2603/92 , G03F7/0392 , G03F7/0397
摘要：式(1)で表されるカリックスレゾルシナレン化合物。【化27】[式中、8個のRは、n個(nは1〜7の整数)の下記式(2)で表わされる基から選択される1種類以上の置換基と、m個(m=8−nで表される整数)の水素からなる。R’は、炭素数2〜12の直鎖状脂肪族炭化水素基、炭素数3〜12の分岐を有する脂肪族炭化水素基、フェニル基、p−フェニルフェニル基、p−tert−ブチルフェニル基、下記式(3)で表される芳香族基、又はこれら置換基のうち2種以上を組み合わせて構成される置換基である。尚、R’は同じでも異なってもよい。【化28】【化29】[式中、R’’は、水素又は式(2)で表される基から選択される置換基である。]]

2. 发明专利

JP5279280B2 Shape measuring device 有权
公开(公告)号：JP5279280B2
公开(公告)日：2013-09-04
申请号：JP2008006615
申请日：2008-01-16
申请人：博雄木下 , 健夫渡邊
发明人：博雄木下 , 健夫渡邊
IPC分类号： G01B11/24 , G01B9/02
摘要： PROBLEM TO BE SOLVED: To provide a shape measuring device for accurately at high speed measuring the shape of a substrate whose surface is designed so as to provide a predetermined repetition pattern. SOLUTION: This shape measuring device 1 measures the shape of the substrate 2 whose surface is designed so as to provide the predetermined repetition pattern. The shape measuring device includes an irradiation section 10 for irradiating the surface of the substrate 2 with coherent light in a space area and/or time area, an imaging element 15 for receiving diffraction light by the surface of the substrate 2 irradiated by the irradiation section 10, and a measurement processing unit 16 for measuring the shape of the surface of the substrate 2 in response to the light receiving result by the imaging element 15. COPYRIGHT: (C)2009,JPO&INPIT

3. 发明专利

JP5111106B2 Calixresorcinarene compound, as well as photoresist base material and the composition consisting of it 有权
公开(公告)号：JP5111106B2
公开(公告)日：2012-12-26
申请号：JP2007518951
申请日：2006-05-26
申请人：博雄木下 , 健夫渡邊 , 出光興産株式会社
发明人：博雄木下 , 健夫渡邊 , 宏寿石井 , 貴紀大和田
IPC分类号： C07C69/712 , G03F7/039 , H01L21/027
CPC分类号： C07C69/736 , C07C2603/92 , G03F7/0392 , G03F7/0397

4. 发明专利

JP2005234324A Resist composition for electron beam or euv 审中-公开
标题翻译：电子束或EUV的耐腐蚀组合物
公开(公告)号：JP2005234324A
公开(公告)日：2005-09-02
申请号：JP2004044737
申请日：2004-02-20
申请人： Hiroo Kinoshita , Tokyo Ohka Kogyo Co Ltd , Takeo Watanabe , 博雄木下 , 東京応化工業株式会社 , 健夫渡邊
发明人： HANEDA HIDEO , KINOSHITA HIROO , WATANABE TAKEO
IPC分类号： G03F7/039 , G03F7/038 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition capable of reducing contamination within an exposure device in a lithography process with an electron beam or EUV, and to provide a resist pattern forming method.
SOLUTION: The resist composition for an electron beam or EUV contains (A) a resin component whose alkali solubility is changed by the action of an acid and (B) an acid generator, and satisfies at least one of the condition that the component (A) is based on a resin not containing quaternary carbon in a backbone, and the condition that, when the total number of atoms in a structural formula which represents the component (A) is expressed by Na, the number of carbon atoms by Nc and that of oxygen atoms by No, the value N represented by the numerical expression (1): N=Na/(Nc-No) is ≤3.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供能够在电子束或EUV的光刻工艺中减少曝光装置内的污染的抗蚀剂组合物，并提供抗蚀剂图案形成方法。解决方案：电子束或EUV的抗蚀剂组合物含有（A）通过酸的作用使碱溶解度变化的树脂成分和（B）酸产生剂，并且满足以下条件中的至少一个：组分（A）基于骨架中不含有季碳的树脂，并且当表示组分（A）的结构式中的总原子数由Na表示时，碳原子数由 Nc和氧原子的数量为N，由数值表达式（1）表示的值N：N = Na /（Nc-No）≤3。版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP4347110B2 Electron beam or euv positive resist composition for 有权
公开(公告)号：JP4347110B2
公开(公告)日：2009-10-21
申请号：JP2004100206
申请日：2004-03-30
申请人：博雄木下 , 東京応化工業株式会社 , 健夫渡邊
发明人：博雄木下 , 健夫渡邊 , 英夫羽田
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0048 , G03F7/0397 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/12 , Y10S430/143 , Y10S430/146

6. 发明专利

JP2009168593A Shape measuring device 有权
标题翻译：形状测量装置
公开(公告)号：JP2009168593A
公开(公告)日：2009-07-30
申请号：JP2008006615
申请日：2008-01-16
申请人： Hiroo Kinoshita , Takeo Watanabe , 博雄木下 , 健夫渡邊
发明人： KINOSHITA HIROO , WATANABE TAKEO
IPC分类号： G01B11/24
摘要： PROBLEM TO BE SOLVED: To provide a shape measuring device for accurately at high speed measuring the shape of a substrate whose surface is designed so as to provide a predetermined repetition pattern. SOLUTION: This shape measuring device 1 measures the shape of the substrate 2 whose surface is designed so as to provide the predetermined repetition pattern. The shape measuring device includes an irradiation section 10 for irradiating the surface of the substrate 2 with coherent light in a space area and/or time area, an imaging element 15 for receiving diffraction light by the surface of the substrate 2 irradiated by the irradiation section 10, and a measurement processing unit 16 for measuring the shape of the surface of the substrate 2 in response to the light receiving result by the imaging element 15. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种形状测量装置，用于在高速度下准确地测量其表面被设计成提供预定重复图案的基板的形状。解决方案：该形状测量装置1测量其表面被设计成提供预定重复图案的基板2的形状。该形状测量装置包括用于在空间区域和/或时间区域中用相干光照射基板2的表面的照射部分10，用于接收由照射部分照射的基板2的表面的衍射光的成像元件15 10，以及用于根据摄像元件15的光接收结果测量基板2的表面形状的测量处理单元16.（C）2009，JPO＆INPIT

7. 发明专利

JP2006078760A Resist composition for electron beam or euv (extreme ultraviolet radiation) and resist pattern forming method 审中-公开
标题翻译：电子束或EUV（极端超紫外线辐射）和电阻图形形成方法的电阻组合
公开(公告)号：JP2006078760A
公开(公告)日：2006-03-23
申请号：JP2004262488
申请日：2004-09-09
申请人： Hiroo Kinoshita , Tokyo Ohka Kogyo Co Ltd , Takeo Watanabe , 博雄木下 , 東京応化工業株式会社 , 健夫渡邊
发明人： HANEDA HIDEO , SHIONO HIROHISA , KINOSHITA HIROO , WATANABE TAKEO
IPC分类号： G03F7/039 , G03F7/004 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： PROBLEM TO BE SOLVED: To provide a technique by which good sensitivity is obtained with respect to a resist composition for a lithography process with EUV or an electron beam and a resist pattern forming method. SOLUTION: The resist composition for an electron beam or EUV contains (A) a resin component whose alkali solubility is varied by the action of an acid and (B) an acid generator component which generates an acid upon exposure, wherein the component (B) contains at least one or more onium salts each having an anion represented by formula (b-0-1) or (b-0-2) wherein X represents a 2-6C alkylene group in which at least one H atom has been substituted by an F atom; and Y and Z each independently represent a 1-10C alkyl group in which at least one H atom has been substituted by an F atom. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于EUV或电子束的光刻工艺的抗蚀剂组合物和抗蚀剂图案形成方法获得良好的灵敏度的技术。解决方案：电子束或EUV的抗蚀剂组合物含有（A）其碱溶性通过酸的作用而变化的树脂组分和（B）暴露时产生酸的酸产生剂组分，其中组分（B）含有至少一种或多种鎓盐，其各自具有式（b-0-1）或（b-0-2）表示的阴离子），其中X表示2-6个亚烷基，其中至少一个H原子具有被F原子取代; Y和Z各自独立地表示其中至少一个H原子被F原子取代的1-10C烷基。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP2005157255A Electron beam or resist composition for euv 有权
标题翻译： EUV的电子束或电阻组合物
公开(公告)号：JP2005157255A
公开(公告)日：2005-06-16
申请号：JP2004100206
申请日：2004-03-30
申请人： Hiroo Kinoshita , Tokyo Ohka Kogyo Co Ltd , Takeo Watanabe , 博雄木下 , 東京応化工業株式会社 , 健夫渡邊
发明人： HANEDA HIDEO , KINOSHITA HIROO , WATANABE TAKEO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0048 , G03F7/0397 , Y10S430/106 , Y10S430/114 , Y10S430/118 , Y10S430/12 , Y10S430/143 , Y10S430/146
摘要： PROBLEM TO BE SOLVED: To provide a resist composition and resist pattern forming method which can prevent contamination in a device in a lithography process by an electron beam or EUV(extreme-ultraviolet radiation).
SOLUTION: An organic solvent including one or more kind chosen from propylene glycol monomethyl ether (PGME), methyl amyl ketone (MAK), butyl acetate (BuOAc) and 3-methyl methoxy propionate (MMP) as a main ingredient is used for a resist solvent.
COPYRIGHT: (C)2005,JPO&NCIPI

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