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1. 发明专利

JP2006024217A Method for sharing single host controller with multiple functional devices 审中-公开
标题翻译：用多个功能设备共享单个主机控制器的方法
公开(公告)号：JP2006024217A
公开(公告)日：2006-01-26
申请号：JP2005198397
申请日：2005-07-07
申请人： Sychip Inc , サイチップインコーポレーテッド
发明人： LIU WEI , MO FENG , SUN KUNQUAN , YU YANBING , ZHU YUJIE
IPC分类号： G06F13/10 , G06F3/08 , G06K17/00
CPC分类号： G06F13/4022 , G06F13/385
摘要： PROBLEM TO BE SOLVED: To provide a PDA device and a PDA microprocessor controller that allow simultaneous operation of multiple functions. SOLUTION: Simultaneous multiple functions are implemented by connecting all of the functional devices to a host controller 11 and multiplexing command signals and content data to and from the host controller to individual devices. The interconnection may be implemented using a dynamic switching matrix that allows the host controller to switch from one functional device to another using signal response from the functional devices. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供允许同时操作多个功能的PDA设备和PDA微处理器控制器。解决方案：通过将所有功能设备连接到主机控制器11并将命令信号和内容数据复制到主机控制器和从主机控制器到各个设备来实现同时多个功能。可以使用允许主机控制器使用来自功能设备的信号响应从一个功能设备切换到另一个功能设备的动态交换矩阵来实现互连。版权所有（C）2006，JPO＆NCIPI

2. 发明专利

JP2006270959A Cellular/wi-fi combination device 审中-公开
标题翻译：细胞/ WI-FI组合装置
公开(公告)号：JP2006270959A
公开(公告)日：2006-10-05
申请号：JP2006077917
申请日：2006-03-22
申请人： Sychip Inc , サイチップインコーポレーテッド
发明人： DEGANI YINON , FAN YU , GAO CHARLEY CHUNLEI , SUN KUNQUAN , SUN LIGUO , TAI KING LIEN
IPC分类号： H03H7/075 , H04B1/40 , H04M1/00
CPC分类号： H01L27/016
摘要： PROBLEM TO BE SOLVED: To provide an integrated passive device (IPD) designated to allow implementation of a cellular RF and Wi-Fi RF in a single hand held device. SOLUTION: To address the problem of RF interference, a thin film RF high rejection bandpass filter is formed in an IPD implementation. The IPD implementation preferably uses silicon as the substrate material. This allows the thin film RF high rejection bandpass filter to be made using silicon processing technology, and thus produce low cost filters that still meet stringent performance requirements demanded due to the co-existing RF units. In preferred embodiments of the invention, wafer level processing using silicon substrates adds to the cost effective manufacture of the high functional IPDs. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供被指定为允许在单手持设备中实现蜂窝RF和Wi-Fi RF的集成无源设备（IPD）。解决方案：为了解决RF干扰的问题，在IPD实现中形成了薄膜RF高阻抗带通滤波器。 IPD实施优选使用硅作为基底材料。这允许使用硅处理技术制造薄膜RF高阻抗带通滤波器，并因此产生仍然满足由于共存的RF单元要求的严格性能要求的低成本滤波器。在本发明的优选实施例中，使用硅衬底的晶片级处理增加了高功能IPD的成本有效的制造。版权所有（C）2007，JPO＆INPIT

3. 发明专利

JP2008072121A Integrated passive device including high-q inductor 审中-公开
标题翻译：集成无源器件，包括高Q电感
公开(公告)号：JP2008072121A
公开(公告)日：2008-03-27
申请号：JP2007237420
申请日：2007-09-13
申请人： Sychip Inc , サイチップインコーポレーテッド
发明人： DEGANI YINON , CHEN YINCHAO , FAN YU , GAO CHARLEY CHUNLEI , SUN KUNQUAN , SUN LIQUO
IPC分类号： H01F41/04 , H01F17/00 , H01F27/00 , H01L21/822 , H01L27/04
CPC分类号： H01F17/0006 , H01F2017/002 , H01F2017/0086 , H01L27/0641 , H01L28/10 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a flip bonding double substrate inductor a part of which is built on an IPD (Integrated Passive Device) base substrate and a fitting part of which is built on a cover (a second) substrate.
SOLUTION: Next the cover substrate is reversed and is bonded on the base substrate, thereby the two parts of the inductor are fitted. By this method, the inductor of two layers can be built without using a substrate of plural layers. Furthermore, a flip bonding double substrate inductor of four layers is formed by using two substrates each of which is a substrate of two layers.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种翻转接合双基板电感器，其一部分构建在IPD（集成无源器件）基底基板上，其配合部分构建在盖（第二）基板上。解决方案：接下来，盖基板反转并结合在基底基板上，由此安装电感器的两部分。通过这种方法，可以在不使用多层的基板的情况下构建两层的电感器。此外，通过使用两个基板来形成四层的翻转接合双基板电感器，每个基板是两层的基板。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2005317979A Integrated passive device 审中-公开
标题翻译：集成无源器件
公开(公告)号：JP2005317979A
公开(公告)日：2005-11-10
申请号：JP2005131277
申请日：2005-04-28
申请人： Sychip Inc , サイチップインコーポレーテッド
发明人： DEGANI YINON , LAU MAUREEN Y , TAI KING LIEN
IPC分类号： H01L27/04 , H01L21/00 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L23/34 , H01L27/01
CPC分类号： H01L28/40 , H01L27/016 , H01L27/101 , H01L28/10 , H01L28/20 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a method to manufacture an integrated passive device, an integrated passive device, and a substrate thereof.
SOLUTION: The integrated passive device (IPD) is formed on a polycrystalline silicon substrate. The method for manufacturing the IPD begins with a single-crystal handle wafer, deposits a thick polysilicon substrate layer on one or both faces of the begining wafer, forms the IPD on one of the multiple polysilicon substrate layers and removes the handle wafer. Thus, the polysilicon substrate is manufactured. In a preferred embodiment, the single-crystal silicon handle wafer is a silicon wafer that is rejected from a single-crystal silicon wafer manufacturing line.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种制造集成无源器件，集成无源器件及其衬底的方法。解决方案：集成无源器件（IPD）形成在多晶硅衬底上。用于制造IPD的方法是从单晶晶片处开始的，在初始晶片的一个或两个面上沉积厚的多晶硅衬底层，在多个多晶硅衬底层之一上形成IPD，并去除了处理晶片。因此，制造多晶硅衬底。在优选实施例中，单晶硅处理晶片是从单晶硅晶片生产线排除的硅晶片。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2009218576A Mcm package 审中-公开
标题翻译： MCM包
公开(公告)号：JP2009218576A
公开(公告)日：2009-09-24
申请号：JP2009011873
申请日：2009-01-22
申请人： Sychip Inc , サイチップインコーポレーテッド
发明人： DEGANI YINON , FAN YU , GAO CHARLEY CHUNLEI , SUN KUNQUAN , SUN LINGUO
IPC分类号： H01L23/12 , H01L23/34
CPC分类号： H01L25/16 , H01L23/66 , H01L2223/6672 , H01L2224/16225 , H01L2224/16227 , H01L2224/73253 , H01L2924/15311 , H01L2924/15321 , H01L2924/19103 , H01L2924/19104
摘要： PROBLEM TO BE SOLVED: To provide an MCM package configured of an RF/IPD package improving a heat management. SOLUTION: An IPD board 24 is suitable for a system board 21 by using a thin RF chip 26 mounted in a stand-off between the IPD board 24 and the system board 21. An RF interconnection is conducted between the top section of the RF chip 26 and the bottom section of the IPD board 24. A heat is dissipated by connecting a heat sink layer on the RF chip 26 to the heat sink layer on the system board. The heat sink also fills the role as a grounding-plane connecting section. The combination of other types of integrators is manufactured by using the approach. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供由RF / IPD封装构成的MCM封装，从而改善热管理。解决方案：IPD板24通过使用安装在IPD板24和系统板21之间的支架上的薄RF芯片26适用于系统板21. RF互连在 RF芯片26和IPD板24的底部部分。通过将RF芯片26上的散热层连接到系统板上的散热层来消散热量。散热片也充当接地平面连接部分。其他类型的集成商的组合通过使用该方法制造。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2007258713A Integration passive device substrate 审中-公开
标题翻译：集成无源器件基板
公开(公告)号：JP2007258713A
公开(公告)日：2007-10-04
申请号：JP2007067731
申请日：2007-03-16
申请人： Sychip Inc , サイチップインコーポレーテッド
发明人： DEGANI YINON , FAN YU , GAO CHARLEY CHUNLEI , LAU MAUREEN , SUN KUNQUAN , SUN LINGUO
IPC分类号： H01L21/822 , C23C16/24 , H01C7/00 , H01G4/12 , H01G4/30 , H01G4/33 , H01L21/205 , H01L27/01 , H01L27/04
CPC分类号： H01L27/016 , H01L21/84 , H01L23/66 , H01L27/13 , H01L28/10 , H01L28/20 , H01L28/40 , H01L2224/05572 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/13091 , H01L2924/19011 , H01L2924/19103 , H01L2924/00 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To explain the integration passive device (IPD) formed on a silicon substrate covered with an oxide layer by this description. SOLUTION: Undesirable charge storage in a silicon/oxide interface is immobilized by forming a trap center on a silicon surface. The trap center is manufactured from a polysilicon layer inserted between the silicon substrate and an oxide layer. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过该描述来解释形成在被氧化物层覆盖的硅衬底上的集成无源器件（IPD）。解决方案：通过在硅表面上形成陷阱中心来固定硅/氧化物界面中的不期望的电荷存储。陷阱中心由插入在硅衬底和氧化物层之间的多晶硅层制成。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2006191117A Integrated passive device 有权
标题翻译：集成无源器件
公开(公告)号：JP2006191117A
公开(公告)日：2006-07-20
申请号：JP2006000985
申请日：2006-01-06
申请人： Sychip Inc , サイチップインコーポレーテッド
发明人： CHIU ANTHONY M , DEGANI YINON , GAO CHARLEY CHUNLEI , SUN KUNQUAN , SUN LIQUO
IPC分类号： H01L25/18 , H01L27/04 , H01L21/00 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L23/34 , H01L25/04 , H01L27/01
CPC分类号： H01L25/16 , H01L23/49816 , H01L23/49822 , H01L23/49833 , H01L23/645 , H01L23/66 , H01L24/16 , H01L24/48 , H01L24/73 , H01L27/016 , H01L28/10 , H01L28/20 , H01L28/40 , H01L2224/16145 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73204 , H01L2224/73265 , H01L2225/06513 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/13091 , H01L2924/14 , H01L2924/1461 , H01L2924/15311 , H01L2924/19011 , H01L2924/19015 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19103 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2224/48237 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： PROBLEM TO BE SOLVED: To provide a multi-chip module (MCM) that contains an integrated passive device (IPD) as a carrier substrate (IPD MCM). SOLUTION: Parasitic electrical interaction is controlled at one or both interfaces of the IPD, either by eliminating metal from the interfaces, or by the selective use of metal in parts of the MCM that are remote from sensitive device components. The sensitive device components are mainly analog circuit components, especially RF inductor elements. In the IPD layout, the components likely to be affected are separated from other components. This allows the implementation of selective metal approach. It also allows parasitic interaction on top of the IPD substrate to be reduced by the selective placement of IC semiconductor chips and IC chip ground planes. In the preferred embodiments of the IPD MCM, the IPD substrate is polycrystalline. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包含集成无源器件（IPD）作为载体衬底（IPD MCM）的多芯片模块（MCM）。解决方案：通过从接口中消除金属，或通过远离敏感器件组件的MCM部分中选择性使用金属，可以在IPD的一个或两个接口上控制寄生电气相互作用。敏感器件组件主要是模拟电路元件，特别是RF电感元件。在IPD布局中，可能受影响的组件与其他组件分离。这允许实施选择性金属方法。它还允许通过IC半导体芯片和IC芯片接地层的选择性放置来减少IPD衬底上的寄生相互作用。在IPD MCM的优选实施例中，IPD衬底是多晶的。版权所有（C）2006，JPO＆NCIPI

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