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1. 发明专利

JP2008540819A Thin-film deposition method 有权
公开(公告)号：JP2008540819A
公开(公告)日：2008-11-20
申请号：JP2007556065
申请日：2005-12-14
申请人：アイピーエス・リミテッドIPS Ltd.
发明人：テウクソ , ヨンフンパク , キフンリ , サンキョリ
IPC分类号： C23C16/44 , C23C16/06 , C23C16/34 , H01L21/28 , H01L21/285
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76861
摘要：本発明は、薄膜蒸着を一つのチャンバで連続的に遂行して、チャンバ内部には１ないし６個のウエハー（wafer）をローディング（Loading）して薄膜を蒸着する方法に関する。本発明による薄膜蒸着方法は、シャワーヘッド又はガス噴射手段と基板の間の工程間隔を調整可能な半導体薄膜蒸着チャンバ内で基板に薄膜を蒸着する方法において、（ａ）少なくとも一つの基板をチャンバの内部にローディングする段階、（ｂ）第１工程の間隔を維持する基板にＴｉ薄膜を蒸着する段階、（ｃ）前記Ｔｉ薄膜が蒸着された基板の工程間隔を調整するためにウエハーブロックを、第１工程間隔が第２工程間隔となるように移動させる段階、（ｄ）前記第２工程間隔に移動された基板にＴｉＮ薄膜を蒸着する段階、及び、（ｅ）前記Ｔｉ／ＴｉＮ薄膜が蒸着された基板をアンローディングする段階を含むことを特徴とする。本発明によれば、一つのチャンバで１ないし６個の基板にＴｉ／ＴｉＮ薄膜蒸着が連続進行可能になれば、通常このような場合４個のチャンバの中から１個だけＰＭ期間になるように調整することで、クラスタツールの可動率が大きく向上する。また、一つのチャンバでＴｉ／ＴｉＮを連続遂行するようになればＴｉチャンバからＴｉＮチャンバの方に基板を移す時間を節約できるので単位時間当り基板処理効率も非常に高くなる。
【選択図】図１

2. 发明专利

JP2005026687A Vapor disposition method for thin film 审中-公开
标题翻译：薄膜蒸发处理方法
公开(公告)号：JP2005026687A
公开(公告)日：2005-01-27
申请号：JP2004190822
申请日：2004-06-29
申请人： Ips Ltd , アイピーエスリミテッドIPS Ltd.
发明人： PARK YOUNG-HOON , CHO BYOUNG CHEOL , LIM HONG JOO , LEE SANG-IN , LEE SANG KYU , JO TAIKYOKU , CHANG HO SEUNG
IPC分类号： H01L21/205 , C23C16/00 , C23C16/44 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32862 , C23C16/4405
摘要： PROBLEM TO BE SOLVED: To provide a vapor disposition method including a dry cleaning method that can lower CoO and can effectively eliminate alumina (Al2O3), HfO2, HfSiO4, AlHfO, ZrO2, Ta2O5 thin films and the like which could not be thoroughly eliminated by a conventional cleaning method.
SOLUTION: After a thin film is vapor-disposed onto a wafer W on a wafer block 20, the wafer is unloaded from the wafer block 20, and a dry cleaning stage S4 is performed to remove the thin film accumulated inside the chamber 10. At the dry cleaning stage, a dummy wafer is set on the wafer block 20. While an inert gas and a cleaning gas are put into the chamber 10, RF energy is applied to the chamber 10 to remove the thin film accumulated inside the chamber 10. While a gas different from the cleaning gas is put into the chamber 10, RF energy is applied and activated to remove element constituents of the cleaning gas from the inside of the chamber 10, and then, the dummy wafer is unloaded from the wafer block 20.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包括可以降低CoO并可以有效地消除不可能的氧化铝（Al 2 O 3），HfO 2，HfSiO 4，AlHfO，ZrO 2，Ta 2 O 5薄膜等的干法清洗方法的蒸汽配置方法通过常规的清洁方法彻底消除。解决方案：将薄膜蒸镀在晶片块20上的晶片W上之后，从晶片块20卸载晶片，并执行干洗阶段S4以除去积聚在腔室内的薄膜在干洗阶段，在晶片块20上设置虚设晶片。当将惰性气体和清洁气体放入室10中时，将RF能量施加到室10以除去积聚在室10内的薄膜当与清洁气体不同的气体被放入室10中时，施加并激活RF能量以从腔室10的内部去除清洁气体的元件组分，然后将虚设晶片从晶片块20.版权所有（C）2005，JPO＆NCIPI

3. 发明专利

JP2004165668A Thin film deposition method utilizing hafnium compound 有权
公开(公告)号：JP2004165668A
公开(公告)日：2004-06-10
申请号：JP2003382404
申请日：2003-11-12
申请人： Ips Ltd , アイピーエスリミテッドIPS Ltd.
发明人： PARK YOUNG-HOON , AHN CHEOL HYUN , LEE SANG JIN , CHO BYOUNG CHEOL , PARK SANG KWON , LIM HONG JOO , LEE SANG KYU , BAE JANG HO
IPC分类号： C23C16/42 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/20 , H01L21/316
CPC分类号： C23C16/405 , C23C16/40 , C23C16/45519 , C23C16/45529 , C23C16/45565 , C23C16/45574
摘要： PROBLEM TO BE SOLVED: To provide a thin film deposition method utilizing a hafnium compound. SOLUTION: To deposit a thin hafnium oxide film on a substrate, a procedure comprising a first reactive gas feeding process, a first reactive gas purging process, a third reactive gas feeding process, and a third reactive gas purging process is performed N times, and then another procedure comprising a second reactive gas feeding process, a second reactive gas purging process, a third reactive gas feeding process, and a third reactive gas purging process is performed M times. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2012501557A Multilayer metal thin film manufacturing method and manufacturing equipment 有权
公开(公告)号：JP2012501557A
公开(公告)日：2012-01-19
申请号：JP2011525967
申请日：2008-09-04
申请人：アイピーエス・リミテッドIPS Ltd.
发明人：イ・ジュンウク , パク・ヨンホン
IPC分类号： H01L21/285 , C23C16/06 , H01L21/28
CPC分类号： H01L21/28556 , C23C8/24 , C23C16/06 , C23C16/56 , C23C28/322 , C23C28/34
摘要： Provided are methods and apparatuses for manufacturing a multilayer metal thin film without additional heat treatment processes. The method of manufacturing a multilayer metal thin film including steps of: (a) forming a first metal layer on a substrate by flowing a first metal precursor into a first reaction container; and (b) forming a second metal layer on the first metal layer by flowing a second metal precursor into a second reaction container, wherein the step (b) is performed in a range of a heat treatment temperature of the first metal layer so that the second metal layer is formed as the first metal layer is heat-treated.

5. 发明专利

JP2011521443A A method of forming a chalcogenide thin film 有权
公开(公告)号：JP2011521443A
公开(公告)日：2011-07-21
申请号：JP2011504925
申请日：2009-04-16
申请人：アイピーエス・リミテッドIPS Ltd.
发明人：ユ，ドン−ホ , リー，キ−フン , リー，ジョン−ウク
IPC分类号： H01L21/365 , C23C16/30 , H01L27/105 , H01L45/00
CPC分类号： C23C16/305 , C23C16/042 , C23C16/45527
摘要： The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a substrate with a pattern formed is loaded into a reactor, and a source gas is supplied onto the substrate. Here, the source gas includes at least one source gas selected from germanium (Ge) source gas, gallium (Ga) source gas, indium (In) source gas, selenium (Se) source gas, antimony (Sb) source gas, tellurium (Te) source gas, tin (Sn) source gas, silver (Ag) source gas, and sulfur (S) source gas. A first purge gas is supplied onto the substrate in order to purge the source gas supplied onto the substrate, a reaction gas for reducing the source gas is then supplied onto the substrate, and a second purge gas is supplied onto the substrate in order to purge the reaction gas supplied onto the substrate. At least one operation, namely changing the supply time of the first purge gas and/or adjusting the internal pressure of the reactor is performed in such a way as to ensure that the deposition rate at an inner portion of the pattern is greater than the deposition rate at an upper portion of the pattern. According to the present invention, it is possible to form a chalcogenide thin film having an excellent gap-fill property by changing the purge time of the source gas or adjusting the internal pressure of the reactor in such a way as to ensure that the film forming rate at the inner portion of the pattern is greater than the film forming rate at the upper portion of the pattern.

6. 发明专利

JP3924483B2 Chemical vapor deposition apparatus 有权
公开(公告)号：JP3924483B2
公开(公告)日：2007-06-06
申请号：JP2002076975
申请日：2002-03-19
申请人：アイピーエスリミテッドIPS Ltd.
发明人：相俊朴 , 宰湖金
IPC分类号： C23C16/455 , C23C16/44 , C23C16/515 , H01L21/205
CPC分类号： C23C16/45544 , C23C16/45514 , C23C16/45538 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/515

7. 发明专利

JP2006257554A Thin film deposition system 审中-公开
标题翻译：薄膜沉积系统
公开(公告)号：JP2006257554A
公开(公告)日：2006-09-28
申请号：JP2006072716
申请日：2006-03-16
申请人： Ips Ltd , アイピーエスリミテッドIPS Ltd.
发明人： PARK YOUNG HOON , LEE SAHNG KYU , LEE KI HOON , SEO TAE WOOK
IPC分类号： C23C16/14 , C23C16/18 , C23C16/34
CPC分类号： C23C16/45527 , C23C16/45523
摘要： PROBLEM TO BE SOLVED: To provide a thin film deposition system where a thin film is swiftly vapor-deposited on a substrate, and further, the purity of the thin film can be improved using the conventional ALD (Atomic Layer Deposition) system. SOLUTION: During a second reaction gas continuous feeding process S12 of continuously feeding a second reaction gas into a chamber, a process cycle including a first reaction gas feeding process S13a of feeding a first reaction gas into the chamber and a first reaction gas purge process S13b of purging the first reaction gas that is not adhered onto a substrate in the chamber is repeatedly performed. The second reaction gas continuous feeding process S12 includes a second reaction gas impulse feeding process S12a of feeding the second reaction gas at an impulse flow rate greater than a basic flow rate during the first reaction gas purge process S 13b. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种薄膜沉积系统，其中薄膜迅速气相沉积在基底上，此外，可以使用常规的ALD（原子层沉积）系统来提高薄膜的纯度。解决方案：在将第二反应气体连续地进料到室中的第二反应气体连续进料步骤S12期间，包括将第一反应气体进料到室中的第一反应气体进料步骤S13a和第一反应气体反复进行清洗未附着在室内的基板上的第一反应气体的吹扫工序S13b。第二反应气体连续进料步骤S12包括在第一反应气体净化过程S 13b期间以大于基本流速的脉冲流量供给第二反应气体的第二反应气体脉冲进料步骤S12a。版权所有（C）2006，JPO＆NCIPI

8. 发明专利

JP3742641B2 Thin film deposition method using the hafnium compound 有权
公开(公告)号：JP3742641B2
公开(公告)日：2006-02-08
申请号：JP2003382404
申请日：2003-11-12
申请人：アイピーエスリミテッドIPS Ltd.
发明人：鉄賢安 , 商権朴 , 永薫朴 , 相奎李 , 相鎮李 , 弘周林 , 将虎裴 , 炳哲趙
IPC分类号： C23C16/42 , H01L21/316 , C23C16/40 , C23C16/44 , C23C16/455 , H01L21/20
CPC分类号： C23C16/405 , C23C16/40 , C23C16/45519 , C23C16/45529 , C23C16/45565 , C23C16/45574

9. 发明专利

JP3631984B2 Ald thin film deposition method 有权
公开(公告)号：JP3631984B2
公开(公告)日：2005-03-23
申请号：JP2001189559
申请日：2001-06-22
申请人：アイピーエスリミテッドIPS Ltd.
发明人：永薫朴
IPC分类号： C23C16/54 , C23C16/44 , C23C16/455 , H01L21/28 , H01L21/285
CPC分类号： C23C16/45544 , C23C16/45548 , C23C16/45561 , C23C16/45565 , C23C16/45574 , Y10S438/935 , Y10T137/4673

10. 发明专利

JP2004282075A Adl thin film deposition method 审中-公开
公开(公告)号：JP2004282075A
公开(公告)日：2004-10-07
申请号：JP2004072467
申请日：2004-03-15
申请人： Ips Ltd , アイピーエスリミテッドIPS Ltd.
发明人： PARK YOUNG-HOON , YU KONZAI , PARK SANG KWON , CHO BYOUNG CHEOL , LEE SEOUNG WOOK , LIM HONG JOO , LEE SANG KYU , BAE JANG HO
IPC分类号： H01L21/20 , C23C16/44 , C23C16/455 , H01L21/00 , H01L21/306 , H01L21/31 , H01L21/316
CPC分类号： H01L21/67028 , C23C16/4405 , C23C16/45519 , C23C16/45525 , C23C16/45565 , C23C16/45574 , H01J37/32082 , H01L21/02046 , H01L21/31616 , H01L21/31641 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To provide an efficient ALD thin film deposition method in which a thin film which can not be removed by thermal dry cleaning method can be removed without opening a reaction chamber.
SOLUTION: In the course of an ALD thin film deposition process, a dummy substrate is loaded in a reaction chamber 10 and a cleaning gas is supplied into the reaction chamber. After the atmosphere in the reaction chamber is stabilized, RF energy is applied to a showerhead 40 to activate the cleaning gas. Thin films laminated on the surface of the showerhead is removed intensively by the activated cleaning gas. The dummy substrate is replaced by a new dummy substrate and the cleaning to the showerhead is repeated. After completing the cleaning, the internal of the reaction camber is purged with an inert gas.
COPYRIGHT: (C)2005,JPO&NCIPI

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