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1. 发明专利

JPH1087376A METHOD FOR BONDING SILICON CARBIDE PARTS 失效
公开(公告)号：JPH1087376A
公开(公告)日：1998-04-07
申请号：JP11587697
申请日：1997-05-06
申请人： CVD INC
发明人： GOELA JITENDRA S , BURNS LEE E
IPC分类号： B23K1/19 , C04B37/00 , H01L21/683 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To bond 1st and 2nd silicon carbide parts to each other. SOLUTION: First and 2nd parts 12, 14 separately providing a female joining member 13 for receiving and a male joining member 15 for insertion have opposite side walls practically parallel to the insertion direction. The side walls have been formed so as to leave a gap having about

2. 发明专利

JPH06239609A NEW LIGHT TRANSMITTING INDEPENDENT BETA-SIC AND PREPARATION THEREOF 失效
公开(公告)号：JPH06239609A
公开(公告)日：1994-08-30
申请号：JP28339893
申请日：1993-11-12
申请人： CVD INC
发明人： JITENDORA ESU JIYOORA , RII II BAANZU , REIMONDO ERU TEIRAA
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44 , C04B35/56

3. 发明专利

JPH03146901A MAKING OF LIGHT CERAMIC MIRROR BY CHEMICAL VAPOR DEPOSITION 失效
公开(公告)号：JPH03146901A
公开(公告)日：1991-06-21
申请号：JP26528890
申请日：1990-10-04
申请人： CVD INC
发明人： JITENDORA SHINGUU GOERA , REIMONDO ERU TEIRAA
IPC分类号： B64G1/66 , C23C16/01 , C23C16/22 , C23C16/32 , G02B5/08
摘要： PURPOSE: To manufacture a lightweight ceramic mirror by molding a surface which is a negative of the mirror to be manufactured on a mandrel and forming a mirror plate by vapor deposition of a ceramic material layer and subjecting a ceramic material of an optical class to chemical vapor deposition after peeling of this plate from a supporting structure. CONSTITUTION: The mandrel 90 is first manufactured of graphite, etc., and the one surface thereof is worked to a shape constituting the negative of the mirror. A release coating material is applied on its surface. The mandrel 90 is heated to about 1300 deg.C and an SiC layer is formed by methyl trichlorosilane and hydrogen. Next, the vapor deposited surface is cleaned and, further, the mandrel 90 attached with the SiC surface plate 104 is put into a chemical vapor deposition reactor where the SiC layer 104 is deposited by evaporation on the core structure to reinforce the bond between the mandrel 90 and the SiC surface plate 104. The SiC surface plate 104 is then removed from the mandrel 90 and an Si coating is formed by using trichlorosilane and H, under heating at 1000 deg.C. After an Si/SiC mirror supporting body is taken out the reactor 96, the near net shape mirror is optically worked to the desired accuracy.

4. 发明专利

JP2000087239A PRODUCTION OF SILICON CARBIDE ARTICLE ERECTED WITHOUT BEING SUPPORTED AND DEVICE THEREFOR 失效
公开(公告)号：JP2000087239A
公开(公告)日：2000-03-28
申请号：JP12364099
申请日：1999-04-30
申请人： CVD INC
发明人： GOELA JITENDRA SINGH , PICKERING MICHAEL A
IPC分类号： C04B35/565 , C23C16/01 , C23C16/32
摘要： PROBLEM TO BE SOLVED: To bring out vapor-deposited SiC along with a base body without cracking it and to separate the selfsuppoated SiC from the base body by forming SiC on the solid base body by chemical vapor deposition and providing a boundary zone into which the deposited material is hardly infiltrated. SOLUTION: An SiC precursor gas introduced through an injector 38 is reacted to form vapor-deposited SiC on the mandrels 40 and 42 stacked in the vapor-deposition chamber 16 set in the vacuum chamber 12 of a furnace 10. The lower mandrel 42 is placed on a rotary platform 28 through a separator 50, a space thicker than the final vapor-deposited SiC is provided on the outer surface of the lower end of the deposition zone of the mandrel 42, and a boundary zone with the deposited SiC on the mandrel 42 is formed. A T-shaped sectioned annular separator 66 is disposed between both mandrels and a separator 64 covering an opening at the uppermost part. Consequently, the deposited SiC is brought out along with the mandrels 40 and 42 without being damaged and recovered.

5. 发明专利

JPH06206718A EXTRA-HIGH PURITY SILICON CARBIDE AND HIGH TEMPERATURE SEMICONDUCTOR PROCESSING DEVICE PRODUCED BY SAID SILICON CARBIDE 失效
公开(公告)号：JPH06206718A
公开(公告)日：1994-07-26
申请号：JP18971593
申请日：1993-07-30
申请人： CVD INC
发明人： MAIKERU EE PITSUKAARINGU , JITENDORA ESU GOERA , RII II BAANZU
IPC分类号： C01B31/36 , B28B21/42 , C04B35/565 , C04B35/571 , C04B41/87 , C23C16/01 , C23C16/32 , C23C16/44 , C30B29/36 , H01L21/22 , C04B35/56

6. 发明专利

JPH04154956A METHOD FOR ADJUSTING LAMINATE OF ZINC SELENIDE AND ZINC SULFIDE 失效
公开(公告)号：JPH04154956A
公开(公告)日：1992-05-27
申请号：JP27660490
申请日：1990-10-17
申请人： CVD INC
发明人： POORU BUI PIYUROHITSUTO , JIOFURII ERU KIRUSHIYU , JIEIMUZU SHII MAKUDONARUDO
IPC分类号： B32B9/00 , C23C14/02 , C23C14/06 , C23C16/30 , G02B1/02

7. 发明专利

JPH03153873A METHOD OF CHEMICAL GAS PHASE VAPOR DEPOSITION FOR REPRODUCING FINISH AND SHAPE OF PREFORMED STRUCTURE 失效
公开(公告)号：JPH03153873A
公开(公告)日：1991-07-01
申请号：JP28205290
申请日：1990-10-22
申请人： CVD INC
发明人： REIMONDO ERU TEIRAA , MAIKERU EE PIKARINGU , JIYOZEFU TEII KIIREI
IPC分类号： C23C16/22 , C23C16/01 , C23C16/26 , C23C16/32 , C23C16/44

8. 发明专利

JPH11335840A PRECISION REPRODUCTION BY CHEMICAL VAPOR DEPOSITION 失效
公开(公告)号：JPH11335840A
公开(公告)日：1999-12-07
申请号：JP12433999
申请日：1999-04-30
申请人： CVD INC
发明人： GOELA JITENDRA SINGH
IPC分类号： C23C16/00 , C23C16/01 , C23C16/02
摘要： PROBLEM TO BE SOLVED: To enable the precision reproduction of a dimensionally exact article consisting of dense material by forming the opposite surface of the article on a substrate surface and applying a peelable coating adhered to the substrate surface at the time of taking the material out of the substrate onto the substrate surface. SOLUTION: The zinc sulfide article is produced in a furnace 10. A part or the whole of the inner side surface of a square mandrel 16 consists of a zinc sulfide sheet having the surface machined to an RMS surface roughness below half of the wavelength (632.8 nm) by an He-Ne laser and is coated with an alumina layer of a thickness of about 2000 to 3000 Å. The coating is executed by sputtering, physical vapor deposition, such as evaporation, or a process utilizing a plasma. The accuracy and finish of a coated mandrel 16 are measured and, if the accuracy and finish are not in a regulated range, this coating is stripped and, if necessary, the bare mandrel 16 is polished again and is subjected to the coating again.

9. 发明专利

JPH09186227A SEMICONDUCTOR WAFER SUPPORTING SUSCEPTOR 失效
公开(公告)号：JPH09186227A
公开(公告)日：1997-07-15
申请号：JP33208996
申请日：1996-12-12
申请人： CVD INC
发明人： MAIKERU EE PITSUKAARINGU , RII II BAANZU
IPC分类号： C23C16/44 , C23C16/458 , C30B25/12 , C30B31/14 , H01L21/205 , H01L21/683 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To provide a susceptor for an epitaxial wafer process in which quick heating is carried out. SOLUTION: A susceptor 10 has an outer supporting ring 14 for supporting a wafer 12. The outer supporting ring 14 is preferably made of a single crystal body of silicon carbide, and more preferably, silicon carbide of high purity β-phase (face centered cubic). The wafer 12 is supported by a small wafer shoulder portion 26 of the ring 14. In order to prevent adherence to the back surface or the upper surface of the wafer 12, a closing member shoulder portion 28 is provided below the wafer shoulder portion 26 within the ring 14, and a closing member 16 is arranged on the closing member shoulder portion 28. The closing member 16 is preferably made of quartz, and' is simply supported on the closing member shoulder portion 28. In this method, the ring 14 and the closing member 16 are expandable at different rates in the case of quick changes in temperature, and the closing member 16 or the ring 14 is replaceable.

10. 发明专利

JPH07150357A METHOD OF PROVIDING VAPOR-PHASE TRIMETHYL-INDIUM 失效
公开(公告)号：JPH07150357A
公开(公告)日：1995-06-13
申请号：JP13997994
申请日：1994-06-22
申请人： CVD INC
发明人： KANJOLIA RAVINDRA K , HUI BENJAMIN C
IPC分类号： C30B23/02 , C07F5/00 , C23C16/18 , C23C16/448 , C30B25/14 , H01L21/205

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