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1. 发明专利

JP2008199896A Power factor correction circuit 有权
标题翻译：功率因数校正电路
公开(公告)号：JP2008199896A
公开(公告)日：2008-08-28
申请号：JP2008135997
申请日：2008-05-23
申请人： Fairchild Korea Semiconductor Kk , フェアチャイルドコリア半導體株式会社
发明人： KIM JUNG-WON , KIM DONG-HEE
IPC分类号： H02M3/155 , H02M7/06
CPC分类号： G05F1/70 , H02M1/4225 , H02M2001/0022 , H02M2001/0025 , Y02B70/126
摘要： PROBLEM TO BE SOLVED: To provide this invention relating to the power factor correction circuit compensating a distortion of an input current.
SOLUTION: In this invention, since voltage Vzcd induced in a second side winding L2 of an inductor has input voltage level information when a switch Qsw is in conduction, the voltage Vzcd is utilized to regulate a conduction period of the switch Qsw. In the case of large input voltage, the conduction period of the switch is reduced, and in the case of small input voltage, the conduction period of the switch is increased. That is, in a condition not requiring a separate circuit for sensing input voltage, by adjusting the conduction period of the switch by voltage induced in the secondary side winding of the inductor 2, the distortion of the input current can be compensated.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供与补偿输入电流的失真的功率因数校正电路相关的本发明。解决方案：在本发明中，由于当开关Qsw导通时，在电感器的第二侧绕组L2中感应的电压Vzcd具有输入电压电平信息，所以利用电压Vzcd来调节开关Qsw的导通周期。在大输入电压的情况下，开关的导通周期减小，而在输入电压小的情况下，开关的导通周期增加。也就是说，在不需要用于感测输入电压的单独电路的条件下，通过通过在电感器2的次级侧绕组中感应的电压来调节开关的导通周期，可以补偿输入电流的失真。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP4030148B2 Power semiconductor device and a method of manufacturing the same 失效
公开(公告)号：JP4030148B2
公开(公告)日：2008-01-09
申请号：JP6363997
申请日：1997-03-17
申请人：フェアチャイルドコリア半導體株式会社
发明人：台勳金
IPC分类号： H01L29/74 , H01L29/749 , H01L21/331 , H01L21/332 , H01L29/10 , H01L29/739
CPC分类号： H01L29/66333 , H01L29/1095 , H01L29/739

3. 发明专利

JP2006094697A Power factor correcting circuit 有权
标题翻译：功率因数校正电路
公开(公告)号：JP2006094697A
公开(公告)日：2006-04-06
申请号：JP2005263904
申请日：2005-09-12
申请人： Fairchild Korea Semiconductor Kk , フェアチャイルドコリア半導體株式会社
发明人： KIM JUNG-WON , KIM DONG-HEE
IPC分类号： H02M3/155 , H02M7/06
CPC分类号： G05F1/70 , H02M1/4225 , H02M2001/0022 , H02M2001/0025 , Y02B70/126
摘要： PROBLEM TO BE SOLVED: To provide a power factor correcting circuit which compensates the distortion of an input current.
SOLUTION: This circuit adjusts the conduction period of a switch Qsw by the voltage Vzcd induced in secondary winding L2, making use of such a matter that the voltage Vzcd induced in the secondary winding of an inductor at conduction of a switch Qsw has information about the magnitude of input voltage. Here, in case that the input voltage is large, it reduces the conduction period of the switch, and in case that the input voltage is small, it increases the conduction period of the switch. In short, it can compensate the distortion of an input current by adjusting the conduction period of the switch by the voltage induced in the secondary winding of the inductor, in condition that it does not require a separate circuit for sensing the input voltage.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供补偿输入电流的失真的功率因数校正电路。
解决方案：该电路利用在开关Qsw的导通时在电感器的次级绕组中感应的电压Vzcd在二次绕组L2中感应的电压Vzcd，将开关Qsw的导通周期调整为次级绕组L2中感应的电压Vzcd 关于输入电压幅度的信息。这里，在输入电压大的情况下，降低了开关的导通时间，在输入电压小的情况下，增加开关的导通时间。简而言之，它可以通过在不需要用于感测输入电压的单独电路的条件下通过在电感器的次级绕组中感应出的电压来调节开关的导通周期来补偿输入电流的失真。版权所有（C）2006，JPO＆NCIPI

4. 发明专利

JP4401453B2 Method of manufacturing a power semiconductor device using a semi-insulating polysilicon (sipos) film 有权
公开(公告)号：JP4401453B2
公开(公告)日：2010-01-20
申请号：JP25529198
申请日：1998-09-09
申请人：フェアチャイルドコリア半導體株式会社
发明人：宰弘朴 , 贊毫朴
IPC分类号： H01L21/28 , H01L21/331 , H01L21/306 , H01L21/329 , H01L29/06 , H01L29/40 , H01L29/73 , H01L29/732
CPC分类号： H01L29/405 , H01L29/66136 , H01L29/66295

5. 发明专利

JP4275763B2 Semiconductor device and manufacturing method thereof for power employing the field plate 失效
公开(公告)号：JP4275763B2
公开(公告)日：2009-06-10
申请号：JP9111998
申请日：1998-04-03
申请人：フェアチャイルドコリア半導體株式会社
发明人：贊 ▲亳▼ 朴
IPC分类号： H01L29/41 , H01L21/331 , H01L23/58 , H01L29/06 , H01L29/40 , H01L29/73 , H01L29/732 , H01L29/78
CPC分类号： H01L29/402 , H01L23/585 , H01L29/0615 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A power semiconductor device having an breakdown voltage improving structure and a manufacturing method thereof are provided. A collector region and a base region create a pn junction between them. At least one accelerating region of the same conductivity type as the collector region is formed spaced from the pn junction and at a dose higher than that of the collector region. A field plate overlaps the pn junction and the accelerating region. The field plate has an edge portion that extends past the accelerating region. When a voltage of a reverse direction is applied to the pn junction, an electric field becomes concentrated on the accelerating region as well as on the pn junction and on the edge portion of the field plate. This increases an electric field distribution area and thus also increases the breakdown voltage.

6. 发明专利

JP3995219B2 Insulated gate bipolar transistor and a method of manufacturing the same with a built-in diode 失效
公开(公告)号：JP3995219B2
公开(公告)日：2007-10-24
申请号：JP33988096
申请日：1996-12-19
申请人：フェアチャイルドコリア半導體株式会社
发明人：宰弘朴
IPC分类号： H01L29/739 , H01L29/861 , H01L21/331 , H01L27/04 , H01L29/08 , H01L29/10 , H01L29/78
CPC分类号： H01L29/66333 , H01L29/0834 , H01L29/1095 , H01L29/7395 , Y10S148/126

7. 发明专利

JP3954123B2 Semiconductor device and a method of manufacturing the same 失效
公开(公告)号：JP3954123B2
公开(公告)日：2007-08-08
申请号：JP1293496
申请日：1996-01-29
申请人：フェアチャイルドコリア半導體株式会社
发明人：榮秀張
IPC分类号： H01L21/8249 , H01L27/092 , H01L21/60 , H01L27/06
CPC分类号： H01L27/0623 , H01L21/8249

8. 发明专利

JP3904119B2 Power devices using a solar cell 失效
公开(公告)号：JP3904119B2
公开(公告)日：2007-04-11
申请号：JP6363897
申请日：1997-03-17
申请人：フェアチャイルドコリア半導體株式会社
发明人：顯敏趙 , 容虎金
IPC分类号： H02J7/35 , G05F1/67 , H01L31/04 , H02M3/155
CPC分类号： G05F1/67 , Y02E10/58 , Y10S323/906

9. 发明专利

JP3774788B2 Power factor compensation power supply 失效
公开(公告)号：JP3774788B2
公开(公告)日：2006-05-17
申请号：JP19615897
申请日：1997-07-22
申请人：フェアチャイルドコリア半導體株式会社
发明人：洛春崔 , 猛虎徐
IPC分类号： H02J3/18 , H02M3/155 , H02M1/14 , H02M1/42 , H02M7/12 , H02M7/217
CPC分类号： H02M1/4225 , Y02B70/126 , Y02P80/112

10. 发明专利

JP3766732B2 Switching control integrated circuit 失效
标题翻译：空值
公开(公告)号：JP3766732B2
公开(公告)日：2006-04-19
申请号：JP33988296
申请日：1996-12-19
申请人：フェアチャイルドコリア半導體株式会社
发明人：煥浩成 , 相 ▲ホーン▼ 鄭
IPC分类号： H02M3/00 , H02M7/537 , H03K3/023 , H03K17/00 , H03K17/082 , H03K17/14
CPC分类号： H03K17/145 , H03K17/0822

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