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81. 发明专利

JP2006143488A Crystal growth device 审中-公开
标题翻译：晶体生长装置
公开(公告)号：JP2006143488A
公开(公告)日：2006-06-08
申请号：JP2004332068
申请日：2004-11-16
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： SASAURA MASAHIRO , KODA HIROKI , FUJIURA KAZUO
IPC分类号： C30B17/00 , C30B29/30
摘要： PROBLEM TO BE SOLVED: To decrease influences of a sector interface as a crystal defect.
SOLUTION: A crystal growth device is provided to grow a crystal while dipping a seed crystal 7 into a source material solution 8 in a crucible 1 placed in a furnace 5 and pulling it therefrom, wherein the axial center of a pulling stem 6 with the seed crystal 7 mounted on the distal end is deviated from the axial center of the furnace 5 and from the axial center of the crucible 1. The lowest temperature point on the liquid surface of the source material solution may be shifted from the axial center of the furnace 5 and from the axial center of the pulling axis 6.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：减少扇形界面作为晶体缺陷的影响。解决方案：提供一种晶体生长装置，用于在将晶种7浸入置于炉5中的坩埚1中的源材料溶液8中并将其从其中拉出的同时将晶体生长，其中拉杆6的轴向中心安装在前端的籽晶7从炉5的轴心和坩埚1的轴心偏离。原料溶液的液面上的最低温度点可以从轴心偏移的炉子5和从牵引轴线6的轴向中心。版权所有（C）2006，JPO＆NCIPI

82. 发明专利

JP3759807B2 Manufacturing method and apparatus of the oxide single crystal body 失效
公开(公告)号：JP3759807B2
公开(公告)日：2006-03-29
申请号：JP5775497
申请日：1997-03-12
申请人：日本碍子株式会社
发明人：美能留今枝 , 清史島村 , 竜生川口 , 承生福田
IPC分类号： C30B29/30 , G02B6/00 , C30B15/00 , C30B15/08 , C30B29/28 , G02B6/02 , G02F1/35 , G02F1/355 , H01S3/06 , H01S3/16
CPC分类号： C30B15/08 , C30B15/00 , C30B29/28 , C30B29/30 , C30B29/32 , G02B6/02 , Y10S117/91 , Y10T117/1032
摘要： A process is disclosed for producing an integrated composite oxide single crystal body composed of a core portion made of an oxide single crystal and a clad portion integrated with the core portion and made of another oxide single crystal having a composition different from that of the oxide single crystal constituting the core portion, the process comprising the steps of: (1) preparing a first melt in a first crucible by melting a first material for a first oxide single crystal to constitute the core portion inside the first crucible, (2) preparing a second melt inside a second crucible by melting a second material for a second oxide single crystal to constitute the clad portion inside the second crucible, (3) contacting a seed crystal to the first and second melts, (4) pulling down the first melt through a pull-out opening of the first crucible, (5) pulling down the second melt through a pull-out opening of the second crucible and contacting the pulled-down second melt with a pulled-down portion of the first melt, and (6) integrally pulling down the first and second melts.

83. 发明专利

JP2005289692A Powder of oxide of tantalum or niobium 有权
标题翻译：钨粉或铌的氧化粉
公开(公告)号：JP2005289692A
公开(公告)日：2005-10-20
申请号：JP2004104769
申请日：2004-03-31
申请人： Mitsui Mining & Smelting Co Ltd , 三井金属鉱業株式会社
发明人： AZUMA KENJI , KUWABARA SHIGERU
IPC分类号： C01G35/00 , C01G33/00 , C30B29/30
摘要： PROBLEM TO BE SOLVED: To provide a powder of an oxide of tantalum or niobium, having more excellent flowability. SOLUTION: The powder of the oxide of tantalum or niobium has an angle of repose of 10-60°. The powder of the oxide of tantalum or niobium having such an angle of repose has characteristics in which it is uniformly mixed without necessitating the countermeasure for preventing bridging, or the like because it is excellent in flowability, and is suitable as a raw material for glass (in particular optical glass), a ceramic, a thin film-forming material (sputtering target, pellet for vapor deposition or the like), and a single crystal containing tantalum or niobium, such as lithium tantalate (LT) or lithium niobate (LT). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：待解决的问题：提供具有更优异的流动性的钽或铌的氧化物的粉末。解决方案：钽或铌的氧化物的粉末具有10-60°的休止角。具有这种休止角的钽或铌的氧化物的粉末具有均匀混合的特征，而不需要防止桥接的对策等，因为其流动性优异，并且适合作为玻璃原料（特别是光学玻璃），陶瓷，薄膜形成材料（溅射靶，气相沉积用颗粒等）和含有钽或铌的单晶，如钽酸锂（LT）或铌酸锂（LT ）。版权所有（C）2006，JPO＆NCIPI

84. 发明专利

JP2005272266A Anisotropic-shape powder and its production method, and crystal-oriented ceramic and its production method 有权
标题翻译：各向异性粉体及其生产方法，以及以晶体为主的陶瓷及其生产方法
公开(公告)号：JP2005272266A
公开(公告)日：2005-10-06
申请号：JP2004091347
申请日：2004-03-26
申请人： Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所
发明人： SAITO YASUYOSHI , TAKAO HISAFUMI
IPC分类号： C04B35/00 , C01G33/00 , C04B35/495 , C30B29/30
摘要： PROBLEM TO BE SOLVED: To provide a crystal-oriented ceramic comprising polycrystals of a perovskite-type compound, oriented at a high degree of orientation in the pseudo-cubic ä100} plane and capable of controlling the composition relatively easily, its production method, and to provide an anisotropic-shape powder to be used for the ceramic and its production method. SOLUTION: The crystal-oriented ceramic of the invention is characterized in that it comprises polycrystals whose main phase is a first perovskite-type compound containing at least K and Nb, and that the pseudo-cubic ä100} planes of respective crystal grains constituting the polycrystals are oriented. Such crystal-oriented ceramic is obtained by molding a mixture of an anisotropic-shape powder comprising a second perovskite-type compound whose growth plane is the pseudo-cubic ä100} plane and a matrix compound powder so that the anisotropic-shape powder is oriented and firing the molding. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供一种晶体取向陶瓷，其包含钙钛矿型化合物的多晶体，其在假立方ä100}平面中以高取向取向并且能够相对容易地控制组成，其生产方法，并提供用于陶瓷的各向异性粉末及其制造方法。解决方案：本发明的晶体取向陶瓷的特征在于其包含多晶体，其主相是至少含有K和Nb的第一钙钛矿型化合物，并且各晶粒的伪立方晶面构成多晶体取向。这种晶体取向陶瓷通过将包含生长面为假立方面的第二钙钛矿型化合物的各向异性形状的粉末和基体化合物粉末的混合物成型，得到各向异性形状的粉末，烧成型。版权所有（C）2006，JPO＆NCIPI

85. 发明专利

JP2005225714A Crystal growth apparatus and method for growing single crystal 审中-公开
标题翻译：晶体生长装置和生长单晶的方法
公开(公告)号：JP2005225714A
公开(公告)日：2005-08-25
申请号：JP2004035714
申请日：2004-02-12
申请人： Mitsui Chemicals Inc , 三井化学株式会社
发明人： YAMADA KAZUHIRO , UCHIDA MASAO , KAMIO HIROYUKI
IPC分类号： C30B15/14 , C30B29/30
摘要： PROBLEM TO BE SOLVED: To provide a crystal growth apparatus which can control the characteristics of atmospheric temperature during cooling a crystal to be suitable for cooling while keeping a function of properly controlling the temperature distribution in the furnace during growing a crystal under the same conditions as conventional conditions.
SOLUTION: The crystal growth apparatus is equipped with: a lid 11 to cover the upper part of a growth chamber having a crucible 1 inside to reserve a source melt and to grow a crystal; and an auxiliary heating means to heat the lid in addition to a main heating means for growing a crystal.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种晶体生长装置，其可以在冷却晶体期间控制适于冷却的大气温度的特性，同时保持正常地控制炉中的温度分布的功能，以生长在与常规条件相同的条件。解决方案：晶体生长装置配备有：盖子11，用于覆盖内部具有坩埚1的生长室的上部，以保留源熔体并生长晶体; 以及除了用于生长晶体的主加热装置之外还加热盖子的辅助加热装置。版权所有（C）2005，JPO＆NCIPI

86. 发明专利

JP3675520B2 Method of manufacturing an oxide single crystal 失效
公开(公告)号：JP3675520B2
公开(公告)日：2005-07-27
申请号：JP18483695
申请日：1995-06-28
申请人：信越化学工業株式会社
发明人：由則桑原 , 俊彦流王 , 剛神尾
IPC分类号： C30B15/22 , C30B29/30 , H03H3/08

87. 发明专利

JP3662962B2 Single crystal of the manufacturing method and apparatus 失效
公开(公告)号：JP3662962B2
公开(公告)日：2005-06-22
申请号：JP33544794
申请日：1994-12-22
申请人： Tdk株式会社
发明人：佐藤　　淳 , 克己川嵜
IPC分类号： C30B15/14 , C30B29/30

88. 发明专利

JP2005119906A Lithium tantalate substrate and its producing method 有权
标题翻译：钛酸钡基材及其制备方法
公开(公告)号：JP2005119906A
公开(公告)日：2005-05-12
申请号：JP2003356517
申请日：2003-10-16
申请人： Sumitomo Metal Mining Co Ltd , 住友金属鉱山株式会社
发明人： KAJIGAYA TOMIO , TSUNODA TAKASHI
IPC分类号： C01G35/00 , C30B29/30 , C30B33/02 , H01L37/02 , H01L41/18 , H01L41/39 , H01L41/24
CPC分类号： C30B29/30 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a lithium tantalate (LT) substrate which has sufficient characteristics as a piezoelectric material and with which the problem of lowering of yield or the like caused by pyroelectricity of the substrate in an element production process can be solved; and to provide a method for producing the same. SOLUTION: The lithium tantalate substrate in which the volume resistivity is controlled within the range of 10 6 -10 8 Ω cm can be produced by processing a lithium tantalate crystal grown by the Czochralski method into a substrate form to obtain an LT substrate, then burying the LT substrate in a mixed powder of Al and Al 2 O 3 , and heat treating the substrate at a holding temperature of 350-600°C. It is preferable that the heat treatment is performed in a reduced-pressure atmosphere of an inert gas. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供具有作为压电材料的足够特性的钽酸锂（LT）基板，并且在元件制造工艺中由基板的热电性引起的成品率降低等的问题可以是解决了; 并提供其制造方法。解决方案：其体积电阻率控制在10×10 -6Ω/ cm 3范围内的钽酸锂衬底可以通过加工钽酸锂晶体通过切克劳斯基法（Czochralski）方法生长成底物形式以获得LT基底，然后将LT基底埋入Al和Al 2 SB 3 O 3 SB 3的混合粉末中，并将基材在保持温度为350-600℃。优选在惰性气体的减压气氛中进行热处理。版权所有（C）2005，JPO＆NCIPI

89. 发明专利

JP2005035871A Ornamental material 审中-公开
标题翻译：作物材料
公开(公告)号：JP2005035871A
公开(公告)日：2005-02-10
申请号：JP2003427848
申请日：2003-12-24
申请人： Nec Tokin Corp , Necトーキン株式会社
发明人： ITAGAKI HITOSHI , MACHIDA HIROSHI
IPC分类号： C30B29/30
CPC分类号： Y02B20/181
摘要： PROBLEM TO BE SOLVED: To provide an ornamental material which is obtained in a form that can be worked into accessories or the like, and is capable of performing light emission or color development in different colors under different types of rays, such as the visible ray, the ultraviolet ray, and the infrared ray. SOLUTION: As the ornamental material, a single crystal having a composition represented by chemical formula: RVO 4 , wherein, R is at least one rare earth element selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu is used. COPYRIGHT: (C)2005,JPO&NCIPI

90. 发明专利

JP2004356951A Wafer made of lithium tantalate crystal 审中-公开
公开(公告)号：JP2004356951A
公开(公告)日：2004-12-16
申请号：JP2003152148
申请日：2003-05-29
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SHIONO YOSHIYUKI
IPC分类号： C30B29/30 , C30B33/00 , H01L41/09 , H01L41/18 , H03H3/08 , H03H9/25
摘要： PROBLEM TO BE SOLVED: To provide a wafer where conductivity is increased and characteristic yields in an SAW device do not deteriorate for the wafer made of a lithium tantalate crystal used for manufacturing the SAW device.
SOLUTION: The wafer is made of the lithium tantalate crystal for surface acoustic wave elements. In the lithium tantalate crystal for surface acoustic wave elements, a surface acoustic wave propagation surface is a blackish brown specular surface, the average roughness (Ra) in the center line on the rear is 0.15μm or smaller and conductivity is increased. As a result, the SAW device can be obtained where there are no deterioration in the characteristic yields and no pyroelectricity occurs.
COPYRIGHT: (C)2005,JPO&NCIPI

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