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81. 发明专利

JP2003527263A 失效
公开(公告)号：JP2003527263A
公开(公告)日：2003-09-16
申请号：JP2001567815
申请日：2000-07-19
IPC分类号： B29C33/38 , B29C33/42 , B29L31/00 , C23C14/00 , C23C16/01 , C23C16/08 , C23C16/14 , C23C16/30 , C25D1/00 , C25D1/04

82. 发明专利

JP2003093892A METAL MATERIAL FOR PHOTOCATALYST PRODUCT AND METHOD FOR MANUFACTURING METAL MATERIAL AND PRODUCT 审中-公开
公开(公告)号：JP2003093892A
公开(公告)日：2003-04-02
申请号：JP2001291960
申请日：2001-09-25
申请人： SUMITOMO METAL IND
发明人： MASAKI YASUHIRO , YAO TADASHI , TAKAHASHI MICHIYASU
IPC分类号： B32B15/04 , B01J35/02 , B01J35/06 , B01J37/02 , C03C25/10 , C23C16/14
摘要： PROBLEM TO BE SOLVED: To inexpensively provide a photocatalyst product for various uses, forms and shapes, and to provide a raw material which can be processed into an arbitrary shape even after a photocatalyst membrane is fixed and can be fed by a coil-like shape, a sheet-like shape, or the like; and has excellent mass production properties. SOLUTION: A glass fiber assembly on the surface of which a photocatalyst is carried is bonded on the surface of a metal base material.

83. 发明专利

JP2003022985A Method and device for producing semiconductor device 审中-公开
标题翻译：用于生产半导体器件的方法和装置
公开(公告)号：JP2003022985A
公开(公告)日：2003-01-24
申请号：JP2001209127
申请日：2001-07-10
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： ABE HIROMITSU , KISHIDA TAKENOBU , HINOMURA TORU , HARADA TSUYOSHI
IPC分类号： C23C16/14 , C23C16/34 , H01L21/28 , H01L21/285 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a production method for semiconductor device with which the embedding defect of W does not occur when forming a TiN film in the contact hole of a high aspect ratio by a CVD method using organometallic materials.
SOLUTION: A Ti film 15 for covering the inside of a contact hole 14 formed on an insulating film 13 on a Si wafer 11 is deposited and a TiN film 16 is deposited on the Ti film by the CVD method using organic titanium materials. After the quality of the TiN film is improved by exposing the surface of the TiN film under plasma, a W film 113 is deposited by a CVD method using WF
6 and SiH
4 . The thickness of a titanium-nitride film to be deposited at once is made equal to or less than the value with which the moisture to be taken in when exposed to the atmosphere can be suppressed, and the desired thickness can be obtained by a plurality of process cycles. Otherwise, WF
6 is supplied before SiH
4 or flow ratio of WF
6 /SiH
4 is made into 1.2 to 1.8 and the initialcore of W is formed tight.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种通过使用有机金属材料的CVD法在高纵横比的接触孔中形成TiN膜时不发生W的埋入缺陷的半导体器件的制造方法。解决方案：沉积用于覆盖形成在Si晶片11上的绝缘膜13上的接触孔14的内部的Ti膜15，并且通过使用有机钛材料的CVD法将TiN膜16沉积在Ti膜上。在通过在等离子体下暴露TiN膜的表面来改善TiN膜的质量之后，通过使用WF6和SiH4的CVD法沉积W膜113。使氮化钛膜的一次成膜的厚度成为能够抑制暴露在大气中时吸收的水分的值以下，能够通过多个过程周期。否则，在SiH4之前提供WF6，或者将WF6 / SiH4的流量比设为1.2〜1.8，W的初始核心紧密地形成。

84. 发明专利

JP2002544393A Fluorine-containing source precursor of tantalum and tantalum base formed by using a film and manufacturing method thereof 审中-公开
公开(公告)号：JP2002544393A
公开(公告)日：2002-12-24
申请号：JP2000618521
申请日：2000-05-16
申请人：ゲレストインコーポレイテッド , ザリサーチファウンデーションオブステイトユニヴァーシティオブニューヨーク
发明人：イー．カーロイエロスアラン , シー．アークルズバリー
IPC分类号： C23C16/14 , C23C16/18 , C23C16/34 , C23C16/42 , H01L21/28 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76846 , C23C16/14 , C23C16/18 , C23C16/34 , C23C16/42 , H01L21/76843 , H01L21/76855
摘要： (57)【要約】タンタルを含むフィルムを基材に化学蒸着させる方法は、蒸着チャンバーの中に：(i)基材； (ii)蒸気状態のフッ素を含むソース前駆体；及び（３）反応成分ガスを導入し、かつチャンバー内の基材の温度を約７０℃〜約６７５℃に、基材上にタンタルを含むフィルムを付着させる程の期間に保つことを含む。ソース前駆体は、（I）式：Ｔａ(Ｆ
5-qp )(Ｘ
qp )(Ｒ
p )（ここで、Ｘは臭素、ヨウ素、塩素、及びそれらの組合せより成る群から選択し；ｑは０〜４の整数であり；ｐは０〜４の整数であり；並びにＲは水素及び低級アルキルより成る群から選択する）を有する。

85. 发明专利

JP2002543286A 失效
公开(公告)号：JP2002543286A
公开(公告)日：2002-12-17
申请号：JP2000614489
申请日：2000-04-25
IPC分类号： C23C16/14 , C23C16/448 , C23C16/52 , H01L21/28 , H01L21/285 , H01L21/3205

86. 发明专利

JP2002266073A FILM DEPOSITION METHOD 失效
公开(公告)号：JP2002266073A
公开(公告)日：2002-09-18
申请号：JP2001063202
申请日：2001-03-07
申请人： TOKYO ELECTRON LTD
发明人： ISHIZUKA HODAKA , SUGIMOTO YOSHIO
IPC分类号： C23C16/14 , C23C16/02 , H01L21/28 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a film deposition method for stably depositing an excellent film having small variation of surface condition and characteristics. SOLUTION: The film deposition is carried out by introducing a gas containing HF or a material generating HF gas by a reaction into a treating vessel 11 to purge the inside of the treating vessel with the gas containing HF (ST3), arranging a substrate W to be treated in the treating vessel 11 (ST4) and supplying a film deposition gas into the treating vessel (ST7).

87. 发明专利

JP3324754B2 失效
公开(公告)号：JP3324754B2
公开(公告)日：2002-09-17
申请号：JP50174994
申请日：1993-06-11
IPC分类号： C23C16/14 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/48 , C23C16/54 , H01L21/285 , H01L21/683

88. 发明专利

JP2002525427A 失效
公开(公告)号：JP2002525427A
公开(公告)日：2002-08-13
申请号：JP2000570388
申请日：1999-09-11
IPC分类号： B01J31/02 , C23C16/14 , C23C16/18 , C23C16/44 , H01L21/74

89. 发明专利

JP2002212725A CHEMICAL VAPOR DEPOSITION METHOD OF TUNGSTEN ONTO SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：JP2002212725A
公开(公告)日：2002-07-31
申请号：JP2001393381
申请日：2001-12-26
申请人： CIT ALCATEL
发明人： VERCAMMEN HANS , BAELE JORIS
IPC分类号： C23C16/14 , G01Q30/12 , G01Q90/00 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a method for tungsten chemical vapor deposition onto a semiconductor substrate. SOLUTION: This method includes arranging the semiconductor substrate in a deposition chamber (2), heating the substrate (1) and bringing the substrate (1) into contact with a gaseous mixture containing tungsten hexafluoride (WF6), hydrogen (H2) and at least one carrier gas flowing in the deposition chamber (2) to deposit the tungsten on the substrate (1). The gaseous mixture contains silane (SiH4) having a flow rate at which a flow rate ratio WF6/SiH4 attains 2.5 to 6 and the flow rate of WF6 is 30 to 60 standard cubic centimeter. On the other hand, the pressure in the deposition chamber is maintained at 0.13 to 5.33 kilopascal (1 to 40 Torr).

90. 发明专利

JP2002203813A METHOD FOR FORMING BARRIER METAL FILM 失效
公开(公告)号：JP2002203813A
公开(公告)日：2002-07-19
申请号：JP2000387281
申请日：2000-12-20
申请人： APPLIED MATERIALS INC
发明人： TANAKA KEIICHI , HIZUME SHUNICHI , YOKOYAMA YASUNORI , SHIMAKAWA MAYUMI
IPC分类号： C23C16/14 , C23C16/34 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a means for improving adhesion of a barrier metal film consisting of a Ti film and a TiN film, which is formed when a W film is formed on the semiconductor wafer on which a SiO2 film is formed. SOLUTION: This method is characterized in that the Ti film 6 is formed by a plasma CVD method on the semiconductor wafer 1, subsequently, by introducing processing gas consisting of N2, H2, and Ar in a processing chamber and dissociating the processing gas with plasma, the surface treatment of the Ti film is performed, and the TiN film 7 is subsequently formed by a thermal CVD method, and further characterized in that if the thickness of the Ti film is larger than a prescribed value, the introduced quantity of Ar gas and H2 gas is made larger than that of Ar gas and H2 gas, which is introduced if the thickness of the Ti film is the prescribed value. As a result, stripping of the barrier metal film 5 is prevented.

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