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    • 81. 发明专利
    • Ion functioning substance
    • 离子功能物质
    • JPS6160698A
    • 1986-03-28
    • JP18296584
    • 1984-08-31
    • Agency Of Ind Science & Technol
    • SHIMIZU TOSHIMITANAKA YOSHIO
    • B01J20/281C07K7/64C09K3/00G01N27/30G01N27/333G01N30/88
    • NEW MATERIAL:A cyclic octapeptide compound shown by the formula (R is 1W6C alkyl).
      EXAMPLE: Cyclo-[(N-ethyl)glycyl-L-prolyl]
      4 .
      USE: A substance to be inserted into the interior of ion selecting electrode for analyzing metallic ions, a reagent as a synthetic ionophore for physiologically active study, and a separating agent for isotope and rare earth element.
      PREPARATION: For example, tertiary butyloxycarbonyl-L-prolyl-glycine is reacted with L-propyl-glycylbenzyl ester hydrochloride to give tertiary butyloxycarbonyl- L-propyl-glycyl-L-prolylglycine benzyl ester. Then, this compound is catalytically reduced with hydrogen in the presence of Pd/carbon catalyst, reacted with p-nitrophenol, subjected to ring closure reaction in pyridine, and purified by ion exchange resin treatment and gel filtration, to give a compound shown by the formula.
      COPYRIGHT: (C)1986,JPO&Japio
    • 新材料:由式(R是1-6C烷基)表示的环状八肽化合物。 实施例:环 - [(N-乙基)甘氨酰-L-脯氨酰基] 4。 用途:插入用于分析金属离子的离子选择电极的内部的物质,用于生理学研究的合成离子载体的试剂和同位素和稀土元素的分离剂。 制备例如叔丁氧基羰基-L-脯氨酰基甘氨酸与L-丙基 - 甘氨酰苄基酯盐酸盐反应得到叔丁氧基羰基-L-丙基 - 甘氨酰-L-脯氨酰甘氨酸苄酯。 然后,该化合物在Pd /碳催化剂存在下用氢催化还原,与对硝基苯酚反应,在吡啶中进行闭环反应,并通过离子交换树脂处理和凝胶过滤进行纯化,得到由 式。
    • 82. 发明专利
    • Device for reducing laser pulse width
    • 用于减少激光脉冲宽度的装置
    • JPS6156479A
    • 1986-03-22
    • JP17895284
    • 1984-08-28
    • Agency Of Ind Science & Technol
    • TOMIE TOSHIHISA
    • H01S3/107H01S3/106H01S3/11
    • H01S3/11H01S3/1109
    • PURPOSE:To obtain the titled device which not only incorporates an etalon in the laser resonator but also needs little adjustment, by providiing an etalon consistin of a sigle or a plurality of parallel flat plates or parallel gaps which reduces the pulse width by transmitting laser beams. CONSTITUTION:The first reflection mirror1, etalon 2 having a pair or more of parallel flat plates or parallel gaps, a rod 3 made of glass or the like, a Q switch element4, a forced mode snchronized modulation element 5, and the second reflection mirror are provided. The reflection mirror 6 trasmits light by making the reflectace smaller than that of the first reflection mirror. the etalon 2 is arrangeed by slight inclination not by rectangularity to the optical axis. Then, the rod 3 in the resonator composed of the first and second reflec tion mirrors 1 and 6 is excited with a flash lamp into laser oscillation and then subjected to forced mode synchronization with said element 5, thus oscillating stable short pulses; besides, micro laser pulses are made giant by Q switching wit the Q switch element 4. The reduction of pulse width by means of the etalon 2 ca be effectively accomplished by the enlargemet of pulses.
    • 目的:为了获得不仅在激光谐振器中集成了标准具但也不需要调整的标题装置,通过提供由一个或多个平行平板或平行间隙组成的标准具,通过传输激光束来减小脉冲宽度 。 构成:具有一对或多个平行平板或平行间隙的标准具2的第一反射镜1,由玻璃等制成的杆3,Q开关元件4,强制模式同步调制元件5和第二反射镜 被提供。 反射镜6通过使反射小于第一反射镜的反射而折射光。 标准具2以轻微的倾斜而不是以与光轴成矩形的方式布置。 然后,将由第一和第二反射镜1和6组成的谐振器中的杆3用闪光灯激发成激光振荡,然后与所述元件5进行强制模式同步,从而振荡稳定的短脉冲; 此外,通过Q开关元件4的Q开关使微激光脉冲变得巨大。通过标准具2的脉冲宽度的减小可以通过脉冲放大来有效地实现。
    • 83. 发明专利
    • Oxyhydrogen-system fuel cell
    • 氧气系统燃料电池
    • JPS6154163A
    • 1986-03-18
    • JP17539584
    • 1984-08-22
    • Agency Of Ind Science & Technol
    • MIZUTA SUSUMUKONDO WAKICHIKUMAGAI TOSHIYA
    • H01M8/22H01M8/18
    • H01M8/18Y02E60/528
    • PURPOSE:To make a noble metal catalyst unnecessary and eliminate the danger of explosion by introducing FeCl3 to the cathode to produce FeCl and HCl thereby performing electric power generation and oxidizing the thus produced FeCl2 solution containing HCl to regenerate FeCl3. CONSTITUTION:Hydrogen gas is introduced to the anode and an aqueous FeCl3 solution is introduced to the cathode. FeCl2 and HCl are produced in the cathode to perform intended electric power genetration. Air or oxygen is sent into an aqueous FeCl2 solution containing HCl produced in this process to oxidize Fe into Fe thereby regenerating FeCl3. With this fuel cell structure, the voltage decrease of the cathode is minimized and almost constant container voltage can be produced. Since only a little thermal energy is produced by voltage decrease, it is not necessary to provide this fuel cell with a cooling device.
    • 目的:为了使贵金属催化剂不必要,并通过将FeCl 3引入阴极以产生FeCl和HCl,从而进行发电并氧化由此产生的含有HCl的FeCl 2溶液以再生FeCl 3,从而消除了爆炸危险。 构成:将氢气引入阳极,将FeCl 3水溶液引入阴极。 在阴极中产生FeCl 2和HCl以执行预期的电力渗流。 将空气或氧气送入含有在该方法中产生的HCl的FeCl 2水溶液中以将Fe 2+氧化成Fe 3+,从而再生FeCl 3。 利用这种燃料电池结构,阴极的电压降低最小化并且可以产生几乎恒定的容器电压。 由于仅通过电压降低产生一点热能,所以不必为该燃料电池提供冷却装置。
    • 84. 发明专利
    • Fractional recovery of gallium and indium
    • 玻璃和印度的分类回收
    • JPS6153118A
    • 1986-03-17
    • JP17216584
    • 1984-08-18
    • Agency Of Ind Science & Technol
    • SUZUKI TOSHISHIGEKIMURA TETSUOYOKOYAMA TOSHIROMATSUNAGA HIDEYUKI
    • C01G15/00
    • PURPOSE: To effect the selective adsorption and separation of Ga(III) ion and In(III) ion from a mixed metallic ion solution, by using a chelate resin bonded with diethylenetriamine-N,N,N',N'-tetraacetic acid residue acting as a specific multidentate ligand.
      CONSTITUTION: A chelate resin bonded with the diethylenetriamine-N,N,N',N'- tetraacetate residue of formula acting as a multidentate ligand is used in the present process. Ga(III) ion and In(III) ion can be adsorbed and separated from a mixed metallic ion solution containing Ga(III) ion and/or In(III) ion, and at least Al(III) ion, selectively, in high yield by the use of the above chelate resin.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:通过使用与二亚乙基三胺N,N,N',N'-四乙酸残基结合的螯合树脂来实现从混合金属离子溶液中选择性吸附和分离Ga(III)离子和In(III)离子 作为特定的多齿配体。 构成:在本方法中使用与作为多齿配体的式的二亚乙基三胺-N,N,N',N'-四乙酸酯残基键合的螯合树脂。 Ga(III)离子和In(III)离子可以从含有Ga(III)离子和/或In(III)离子和至少Al(III)离子的混合金属离子溶液中被选择性地吸收和分离, 通过使用上述螯合树脂得到。
    • 85. 发明专利
    • Optical plastic material
    • 光学塑料材料
    • JPS6151010A
    • 1986-03-13
    • JP17379284
    • 1984-08-20
    • Agency Of Ind Science & Technol
    • UCHIDA KINGONAGATA AKIRAIYODA ATSUSHI
    • C08F18/00C08F18/14C08F18/16C08F18/24C08F20/10C08F20/30C08J5/00G02B1/04G02B6/00G02B6/02G02B6/10
    • PURPOSE:A high-refractive index, colorless and transparent optical plastic material suitable as a material for lenses, prisms, spectacle lenses or the like, comprising a (co)polymer of a specified allyl bromophthalate. CONSTITUTION:A radical polymerization initiator is added to a mixture comprising 100-20wt% allyl bromophthalate of the formula [wherein R1 is H or methyl and R2 is (meth)acryloyl or allyloxycarbonyl] and 0-80wt% other monomers (e.g., methyl methacrylate or diallyl phthalate). The obtained polymerizable solution is poured into a desired mold and polymerized by gradually heating to about 100 deg.C to obtain an optical plastic material comprising a three-dimensional crosslinked polymer.
    • 目的:一种高折射率,无色透明的光学塑料,适用于透镜,棱镜,眼镜镜片等的材料,其中包含特定的溴代邻苯二甲酸烯丙酯的(共)聚合物。 构成:将自由基聚合引发剂加入到包含100-20wt%下式[其中R 1为H或甲基且R 2为(甲基)丙烯酰基或烯丙氧羰基]和0-80wt%其它单体(例如甲基丙烯酸甲酯) 或邻苯二甲酸二烯丙酯)。 将得到的可聚合溶液倒入所需的模具中,通过逐渐加热至约100℃聚合,得到包含三维交联聚合物的光学塑料材料。
    • 86. 发明专利
    • Semiconductor device and integrated circuit thereof
    • 半导体器件及其集成电路
    • JPS6150376A
    • 1986-03-12
    • JP17137385
    • 1985-08-02
    • Agency Of Ind Science & Technol
    • HAYASHI YUTAKASUZUKI HIDEKAZU
    • H01L27/10H01L27/15H01L29/88H01L33/30H01L33/34H01L33/38H01L33/42H01L33/44
    • H01L29/88
    • PURPOSE:To effect the implantation from the opposite region to the semiconductor region effectively by selecting the material in which the barrier of thin film seen from the semiconductor is high for the carrier of opposite polarity to that of the main carrier and the barrier of thin film seen from the opposite region is lower for the main carrier. CONSTITUTION:When a metallic thin film, e.g., of aluminum as an opposite region 10, an insulating film, e.g., clean SiO2 film of about 30Angstrom as a thin film 1, and Si single crystal including phosphorus atoms of 10 pieces/cm as a semiconductor region are used, the positive holes produced by the high-energy carriers implanted from the opposite region 10 are gathered by the p type semiconductor region 101B which is arranged within the reach distance of diffusion drift of the holes with being in contact with the n type semiconductor region 100. Consequently a positive potential can be taken out from the region 101B altough a negative bias has been applied to the opposite region 10. In addition to the functions of light accepting and emitting, thus the device can be used at the same time for the power source being capable of reversal of polarity and comprising the characteristics shown in the figure.
    • 目的:通过选择从半导体看到的薄膜的阻挡层对于与主载体相反极性的载体和薄膜的阻挡层的材料,有效地从相对区域到半导体区域的注入 从相对区域看,主载体较低。 构成:当例如作为相对区域10的铝的金属薄膜具有绝缘膜,例如作为薄膜1的约30Ang的清洁SiO 2膜,以及包含10 17个/ cm 3作为半导体区域,由相对区域10注入的高能载流子产生的正空穴被p型半导体区域101B聚集,p型半导体区域101B被布置在孔的扩散漂移的到达距离内, 与n型半导体区域100接触。因此,可以从区域101B取出正电位,因为对相对区域10施加了负偏压。除了光接收和发射的功能之外,因此该器件 可以同时使用能够反转极性的电源并且包括图中所示的特性。
    • 87. 发明专利
    • Thermogravimetric analysis measuring apparatus
    • 热电偶分析测量装置
    • JPS6147546A
    • 1986-03-08
    • JP16976484
    • 1984-08-13
    • Agency Of Ind Science & Technol
    • OKUYA TAKESHINAKADA YOSHINORI
    • G01N5/04G01N5/00
    • G01N5/00
    • PURPOSE:To withstand prolonged use, by extracting changes in the thermogravity as displacement of a quartz spring to eliminate corrosion against a measuring unit body even under the atmosphere of a corrosive gas. CONSTITUTION:A quartz spring 1 having a quartz rod 3 connected to the tip thereof is suspended at the top of a vacuum resistant container and a sample holder 4 made of quartz is mounted at the tip of the quartz rod 3 while a marker 2 at the top thereof. Reaction temperature is measured with a thermocouple 14 by controlling a furnace 12 with a precise program controller 13. With a light source 5, the shadow of the marker 2 is projected on an image sensor 6 and converted into a signal of the intensity of light with a converter 7 to be monitored with a synchroscope 8. Thus, a microcomputer 9 is used to calculate displacement of the quartz spring 1, namely, variation in the thermogravity, from the position of the shadow of the marker 2.
    • 目的:为了耐受长时间的使用,通过将热重力的变化提取为石英弹簧的位移,以消除在腐蚀性气体的气氛下对测量单元的腐蚀。 构成:将具有连接到其顶端的石英棒3的石英弹簧1悬挂在真空容器的顶部,并且将由石英制成的样品保持器4安装在石英棒3的尖端处,同时在 其顶部。 通过用精确的程序控制器13控制炉12,用热电偶14测量反应温度。利用光源5,将标记2的阴影投影到图像传感器6上,并将其转换为具有 转换器7由同步器8监视。因此,微计算机9用于计算石英弹簧1的位移,即热重力的变化与标记物2的阴影位置。
    • 88. 发明专利
    • Investment shell mold used for unidirectional solidification casting of super alloy
    • 投资用于超合金固体固化铸造的模具
    • JPS6146346A
    • 1986-03-06
    • JP16722484
    • 1984-08-09
    • Agency Of Ind Science & Technol
    • TAKAYANAGI TAKESHI
    • C30B29/52B22C1/00B22C1/08B22C1/16B22C1/18
    • B22C1/165
    • PURPOSE: To improve the high-temp. characteristic of a casting mold by adding a silicate binder to alumina powder, coating the mixture thereof to a pattern and thereafter coating alternately and repeatedly the slurry thereof and ZrO
      2 , etc. onto the pattern to mold the pattern and preheating or calcining the pattern at a prescribed temp.
      CONSTITUTION: The hydrolyzed liquid of ethyl silicate or the silicate binder of colloidal silica contg. Na
      2 O at an extremely low ratio is added to the alumina powder and the mixture composed thereof is made into the slurry. Such slurry is coated on the wax pattern and thereafter the mold is formed by coating alternately and repeatedly such slurry and grains of ZrO
      2 , etc. The mold is thereafter preheated or calcined at ≥1,400°C to form mullite to a face coat layer and the matrix. The free silica is annihilated with the formation of the stable mullite at the high temp. by the above-mentioned method and therefore the mechanical properties of the casting mold at the high temp. are improved.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:改善高温。 通过向氧化铝粉末中添加硅酸盐粘合剂,将其混合物涂布到图案上,然后交替地并且重复地将其浆料和ZrO 2等涂覆到图案上以模制图案并预热或煅烧图案 规定温度 构成:硅酸乙酯的水解液体或胶体二氧化硅的硅酸盐粘合剂。 向氧化铝粉末中添加极低比例的Na 2 O,将由其构成的混合物制成浆料。 将这种浆料涂布在蜡图案上,然后通过交替地和重复地涂覆这种ZrO 2等的浆料和颗粒来形成模具。此后,模具在≥= 1400℃下预热或煅烧,以形成面涂层的莫来石 和矩阵。 游离二氧化硅在高温下形成稳定的莫来石,被消灭。 通过上述方法和因此在高温下的铸模的机械性能。 改进了
    • 89. 发明专利
    • Organic semiconductor composition
    • 有机半导体组成
    • JPS6144921A
    • 1986-03-04
    • JP16816084
    • 1984-08-10
    • Agency Of Ind Science & Technol
    • TANAKA SUSUMUSATO MASAAKIKAERIYAMA KYOJISUDA MASAO
    • H01L51/05C08G61/00C08G61/10C08G61/12H01B1/12H01L51/30
    • PURPOSE: The titled composition which is nontoxic and excellent in workability and can be obtained without any molding step, prepared by doping a specified polymer with anions.
      CONSTITUTION: The titled composition of an electric conductivity of 10
      -2 W2S/cm is obtained by doping a thiophene polymer comprising repeating units of formula IIIor IV, obtained by electrolytically polymerizing a compound of formula I or IItogether with a supporting electrolyte (e.g., tetramethylammonium tetrafluoroborate) in a polar solvent (e.g., acetonitrile) in an inert atmosphere such as Ar with anions (e.g., tetrafluoroborate ion) supplied from the supporting electrolyte.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:无毒且优异的可加工性的标题组合物,可通过用阴离子掺杂特定聚合物制备而无需任何模制步骤。 构成:通过将包含式III或IV的重复单元的噻吩聚合物掺杂到通过电解聚合式I或II的化合物与支持电解质获得的噻吩聚合物来获得导电率为10 -2S / cm的标题组成 例如四甲基四氟硼酸铵)在极性溶剂(例如乙腈)中,在惰性气氛例如Ar中与从支持电解质供应的阴离子(例如四氟硼酸根离子)反应。
    • 90. 发明专利
    • Manufacture of semiconductor thin film crystal layer
    • 半导体薄膜晶体层的制造
    • JPS6143409A
    • 1986-03-03
    • JP16490784
    • 1984-08-08
    • Agency Of Ind Science & Technol
    • YOSHII TOSHIO
    • H01L21/20H01L21/263H01L21/268
    • PURPOSE: To easily form a semiconductor thin film crystal layer as well as to improve the characteristics of the element located on the crystal layer by a method wherein a laser beam, to be used to heat up the insulating layer which is the base of the thin film, is used separately from the laser beam which is made to irradiate on the semiconductor thin film to be annealed.
      CONSTITUTION: A polycrystalline Si thin film 3 is formed on a single crystal Si substrate 1 through the intermediary of an SiO
      2 layer 2, and a sample 4 is manufactured. Said sample 4 is placed on a silicon base stand 5, a CW-Ar laser beam 6 is made to irrdaite on the Si thin film 3 of a material 4, and the Si thin film 3 is annealed. Also, another CW-CO
      2 laser beam 7 is made to irradiate from the lower part of the base stand 5, and SiO
      2 layer 2 on the substrate 1 is heated up. The generation of lattice defect caused by the quick cooling of the thin film 3 is prevented, and the characteristics of the element to be formed on the crystal layer is improved.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:为了容易地形成半导体薄膜晶体层,并且通过以下方法改善位于晶体层上的元件的特性,其中激光束用于加热作为薄的基底的绝缘层 薄膜与被照射在要退火的半导体薄膜上的激光束分开使用。 构成:通过SiO 2层2的中间,在单晶Si衬底1上形成多晶Si薄膜3,制造样品4。 将所述样品4放置在硅基架5上,使CW-Ar激光束6对材料4的Si薄膜3进行不规则处理,并且使Si薄膜3退火。 此外,使另一个CW-CO 2激光束7从基座5的下部照射,并且将基板1上的SiO 2层2加热。 防止由薄膜3的快速冷却引起的晶格缺陷的产生,并且提高在晶体层上形成的元件的特性。