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    • 86. 发明专利
    • ANTENNA SYSTEM FOR CHASING TELEPHONE
    • JPH08307491A
    • 1996-11-22
    • JP10936695
    • 1995-05-08
    • NIPPON TELEGRAPH & TELEPHONE
    • SUZUKI TAKAFUMINAGAI YASUHIROOTANI YOSHIMITSUICHINOSE YUTAKA
    • H04M3/42H04B1/59H04B7/26H04M1/00
    • PURPOSE: To realize the personal telephone service with an IC card or a telephone set having a simple structure by incorporating an antenna element for personal authentication, whose communication area is limited only to one person who hooks off the telephone, in the receiver, independent of an antenna element for position registration. CONSTITUTION: When the person who has a remote control type radio IC card 10 where personal ID information is recorded sits at the desk where a telephone set body 1 for personal number service is installed, information is sent from the card 10 to an antenna element 2 for position registration of the body 1 by radio, and the personal number service system performs personal position registration. Next, when call information to the person sitting at the desk is received by an exchange 9, call information is transmitted to the card 10 from the antenna element 2 of the body 1, and information of the call is transmitted to the specific person through an output device like a sounder. The person who receives call information is connected to the body 1; and when a receiver 6 is hooked off, it is reported to the system by the communication between the antenna for person authentication installed in the receiver 6 and the card 10 that the person who receives the call is valid. This system is connected to the body 1 by a line, and personal speech is possible.
    • 89. 发明专利
    • PRODUCTION OF OXIDE SUPERCONDUCTING THIN FILM DEVICE
    • JPH0494179A
    • 1992-03-26
    • JP21023790
    • 1990-08-10
    • NIPPON TELEGRAPH & TELEPHONE
    • TSURU KOJINAGAI YASUHIRO
    • H01L39/24H01B12/06
    • PURPOSE:To flatten the surface of an oxide superconducting thin film and produce a reproducible and reliable thin film by etching the surface of an oxide superconducting thin film which is accumulated on a substrate and heat processed by an ion beam. CONSTITUTION:An ion beam 2 from an ion gun 1, for example, an argon ion beam, is accumulated by sputtering on a substrate 3, and a superconducting thin film 4 which is heat processed in oxygen atmosphere is irradiated by the beam 2. The substrate 3 incorporates an heater 5A and is supported by a turnable substrate holder 5. At such time, the parameters are etching gas, gas pressure, substrate temperature, the angle between an etching ion and the substrate (theta), an acceleration voltage, ion current density, etc. A thin film of Bi2Sr2 Ca2Cu3Ox is accumulated on the MgO (100) substrate for 2000Angstrom in thickness by sputtering and the substrate is heat processed in the oxygen atmosphere for an hour. Such surface treatment removes an impurity layer on the surface of the oxide superconducting thin film, improves the surface and superconductivity.
    • 90. 发明专利
    • PROCESSING OF OXIDE SUPERCONDUCTOR
    • JPH0487385A
    • 1992-03-19
    • JP20226090
    • 1990-07-30
    • NIPPON TELEGRAPH & TELEPHONE
    • TERADA AKIRANAGAI YASUHIROSUZUKI TAKAFUMI
    • H01L39/24
    • PURPOSE:To aim at improvement of controllability of device performance by controlling the dispersion of performance due to forming deterioration, and at the same time, to aim at higher performance by applying etching an oxide superconductor with ion for etching, while irradiating oxygen plasma, after completing the photo-lithography process. CONSTITUTION:A resist mask is formed on a thin film composed of BiSrCaCuO with the same conventional photo-lithography. A sampler 1 is put on the lower part of a vacuum chamber 4 to which an ion is irradiated from a gun 2 and oxygen plasma is irradiated from an oxygen-plasma generator 3. As a result, a pattern of BiSrCaCuO is formed. A complete non-superconduction as shown in curve b can be restrained, and the deterioration of Tc at the pattern width of 2mum, as shown in curve C, is limit only to 65K. On the other hand, it is easily made possible to provide oxygen to be derived by etching gas. If conditions are optimized, a very minute pattern without any deterioration of superconductive characteristics can be ideally formed.