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81. 发明专利

JP2013115399A Storage element, storage device 审中-公开
标题翻译：存储元件，存储设备
公开(公告)号：JP2013115399A
公开(公告)日：2013-06-10
申请号：JP2011263287
申请日：2011-12-01
申请人： Sony Corp , ソニー株式会社
发明人： YAMANE KAZUAKI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , ASAYAMA TETSUYA , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , H01F10/16 , H01F10/26 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： G11C11/161 , G11C7/04
摘要： PROBLEM TO BE SOLVED: To provide a storage element having excellent characteristic balance by ensuring thermal stability.SOLUTION: The storage element includes a layer structure having a storage layer which has magnetization perpendicular to the film surface and the orientation of magnetization that changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming a reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. When current is fed in the lamination direction of the layer structure, the orientation of the storage layer changes thus recording the information in the storage layer. A lamination structure having a Co-Fe-B magnetic layer, and at least one non-magnetic layer, where an oxide layer, the Co-Fe-B magnetic layer and the non-magnetic layer are laminated sequentially, is formed in the storage layer.
摘要翻译：要解决的问题：通过确保热稳定性来提供具有优异特性平衡的存储元件。解决方案：存储元件包括具有垂直于膜表面的磁化的存储层和对应于信息变化的磁化取向的层结构，具有垂直于膜表面的磁化的磁化固定层变为参考存储在存储层中的信息以及设置在存储层和磁化固定层之间的非磁性材料的中间层。当在层结构的层叠方向上馈送电流时，存储层的取向改变，从而将信息记录在存储层中。具有Co-Fe-B磁性层和至少一个非磁性层的叠层结构，其中氧化物层，Co-Fe-B磁性层和非磁性层依次层叠，形成在存储器层。版权所有（C）2013，JPO＆INPIT

82. 发明专利

JP2013115320A Storage element, storage device 审中-公开
标题翻译：存储元件，存储设备
公开(公告)号：JP2013115320A
公开(公告)日：2013-06-10
申请号：JP2011261855
申请日：2011-11-30
申请人： Sony Corp , ソニー株式会社
发明人： UCHIDA HIROYUKI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , ASAYAMA TETSUYA , YAMANE KAZUAKI
IPC分类号： H01L43/08 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/10
CPC分类号： H01L43/08 , H01F10/3236 , H01F10/3254 , H01F10/3272 , H01F10/3286 , H01L27/228 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a storage element capable of high speed operation by preventing an inversion current from increasing in a short pulse width region, thereby ensuring thermal stability.SOLUTION: The storage element includes a layer structure having a storage layer the orientation of magnetization of which changes corresponding to the information, a magnetization fixed layer having magnetization perpendicular to a film surface becoming the reference of the information stored in the storage layer, and an intermediate layer of a non-magnetic material provided between the storage layer and the magnetization fixed layer. The storage layer includes a region of an oxide having a granular structure, and when current is fed in the lamination direction of the layer structure, the orientation of magnetization of the storage layer changes thus recording the information in the storage layer.
摘要翻译：要解决的问题：通过防止反转电流在短脉冲宽度区域中增加而提供能够进行高速操作的存储元件，从而确保热稳定性。解决方案：存储元件包括具有其磁化方向对应于信息的存储层的层结构，具有垂直于膜表面的磁化的磁化固定层变为存储在存储层中的信息的参考以及设置在存储层和磁化固定层之间的非磁性材料的中间层。存储层包括具有颗粒结构的氧化物的区域，并且当电流沿着层结构的层叠方向进给时，存储层的磁化方向改变，从而将信息记录在存储层中。版权所有（C）2013，JPO＆INPIT

83. 发明专利

JP2013115300A Memory element and memory device 有权
标题翻译：存储元件和存储器件
公开(公告)号：JP2013115300A
公开(公告)日：2013-06-10
申请号：JP2011261521
申请日：2011-11-30
申请人： Sony Corp , ソニー株式会社
发明人： HIGO YUTAKA , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , ASAYAMA TETSUYA , YAMANE KAZUAKI , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , G01R33/02 , G11B5/39 , H01F10/32 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , Y10S977/933 , Y10S977/935
摘要： PROBLEM TO BE SOLVED: To provide a memory element and a memory device which can perform a writing operation in a short time without causing writing error.SOLUTION: A memory element 3 is constructed to include a layer structure having: a memory layer 14 in which a magnetization direction is changed according to information; a magnetization fixed layer 12 in which a magnetization direction is fixed; an intermediate layer 13 made of nonmagnetic material which is disposed between the memory layer 14 and the magnetization fixed layer 12; and a perpendicular magnetic anisotropy induction layer 15. In the memory layer 14, a first ferromagnetic layer 14a, a first coupling layer 14b, a second ferromagnetic layer 14c, a second coupling layer 14d and a third ferromagnetic layer 14e are laminated in this order. The first ferromagnetic layer 14a is in contact with the intermediate layer 13, the third ferromagnetic layer 14e is in contact with the perpendicular magnetic anisotropy induction layer 15, and each magnetization direction in the ferromagnetic layers 14a, 14c, 14e neighboring via the coupling layers 14b, 14d is inclined from a direction perpendicular to a film surface.
摘要翻译：要解决的问题：提供可以在短时间内执行写入操作而不引起写入错误的存储器元件和存储器件。解决方案：存储元件3被构造为包括具有以下信息的层结构的层结构：存储层14，其中磁化方向根据信息而改变; 磁化方向固定的磁化固定层12; 设置在存储层14和磁化固定层12之间的由非磁性材料制成的中间层13; 和垂直磁各向异性感应层15.在存储层14中，依次层叠第一铁磁层14a，第一耦合层14b，第二铁磁层14c，第二耦合层14d和第三铁磁层14e。第一铁磁层14a与中间层13接触，第三铁磁层14e与垂直磁各向异性感应层15接触，并且通过耦合层14b相邻的铁磁层14a，14c，14e中的每个磁化方向，14d从垂直于膜表面的方向倾斜。版权所有（C）2013，JPO＆INPIT

84. 发明专利

JP2012235015A Storage element and storage device 审中-公开
标题翻译：存储元件和存储设备
公开(公告)号：JP2012235015A
公开(公告)日：2012-11-29
申请号：JP2011103683
申请日：2011-05-06
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , HOSOMI MASAKATSU , OMORI HIROYUKI , HIGO YUTAKA , YAMANE KAZUAKI , ASAYAMA TETSUYA , UCHIDA HIROYUKI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a storage element which enables a high holding power and improvement of heat stability without increasing a write current.SOLUTION: A storage element comprises: a storage layer holding information by a magnetization state of a magnetic substance; a magnetization fixed layer having reference magnetization of information stored in the storage layer; an intermediate layer formed by a nonmagnetic substance provided between the storage layer and the magnetization fixed layer; a cap layer provided adjacent to the storage layer and on the opposite side to the intermediate layer; and a metal cap layer provided adjacent to the cap layer and on the opposite side to the storage layer. The storage element stores information by reversing magnetization of the storage layer by utilizing spin torque magnetization reversal generated in association with a current flowing in a lamination direction of a layer structure having the storage layer, the intermediate layer and the magnetization fixed layer. The intermediate layer and the cap layer are oxides and the metal cap layer is formed from Pd or Pt.
摘要翻译：要解决的问题：提供一种能够在不增加写入电流的情况下实现高保持功率和提高热稳定性的存储元件。解决方案：存储元件包括：通过磁性物质的磁化状态保持信息的存储层; 具有存储在所述存储层中的信息的参考磁化的磁化固定层; 由设置在所述存储层和所述磁化固定层之间的非磁性物质形成的中间层; 设置在所述存储层附近并且与所述中间层相反的一侧设置的盖层; 以及与盖层相邻并且与存储层相反的一侧设置的金属盖层。存储元件通过利用与具有存储层，中间层和磁化固定层的层结构的层叠方向上流动的电流相关联地产生的自旋转矩磁化反转来反转存储层的磁化来存储信息。中间层和盖层是氧化物，金属盖层由Pd或Pt形成。版权所有（C）2013，JPO＆INPIT

85. 发明专利

JP2012080058A Storage element, memory device 有权
标题翻译：存储元件，存储器件
公开(公告)号：JP2012080058A
公开(公告)日：2012-04-19
申请号：JP2011007665
申请日：2011-01-18
申请人： Sony Corp , ソニー株式会社
发明人： YAMANE KAZUAKI , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , ASAYAMA TETSUYA , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/10 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a storage element in which thermal stability can be improved without increasing the write current.SOLUTION: The storage element includes a memory layer 17 having magnetization which is perpendicular to the film surface and the orientation of which changes in response to the information, a magnetization fixed layer 15 having magnetization perpendicular to the film surface which becomes the reference of information stored in the memory layer, and an insulation layer 16 of a nonmagnetic material provided between the memory layer and the magnetization fixed layer. When electrons subjected to spin polarization are injected in the direction of lamination, orientation of magnetization of the memory layer is changed and the information is recorded. Effective magnitude of an anti-magnetic field received by the memory layer is smaller than saturation magnetization of the memory layer.
摘要翻译：要解决的问题：提供一种可以在不增加写入电流的情况下提高热稳定性的存储元件。解决方案：存储元件包括具有垂直于膜表面并且其取向响应于信息的磁化的存储层17，具有垂直于膜表面的磁化的磁化固定层15成为参考存储在存储层中的信息以及设置在存储层和磁化固定层之间的非磁性材料的绝缘层16。当经受自旋极化的电子沿层叠方向注入时，存储层的磁化取向改变并记录信息。由存储层接收的抗磁场的有效幅度小于存储层的饱和磁化强度。版权所有（C）2012，JPO＆INPIT

86. 发明专利

JP2012064625A Storage element and memory unit 有权
标题翻译：存储元件和存储单元
公开(公告)号：JP2012064625A
公开(公告)日：2012-03-29
申请号：JP2010205262
申请日：2010-09-14
申请人： Sony Corp , ソニー株式会社
发明人： YAMANE ICHIYO , HOSOMI MASAKATSU , OMORI HIROYUKI , BESSHO KAZUHIRO , HIGO YUTAKA , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/32 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a storage element that can reduce a write current and improve heat stability.SOLUTION: The storage element comprises a storage layer 17 having magnetization perpendicular to a film surface with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17, and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. Further, at least boundary faces contacting the storage layer 17 of the insulation layer 16 and another layer (e.g., cap layer 18) contacting the storage layer 17 on the side opposite to the insulation layer 16 are formed of an oxide film such as MgO or the like. Still further, the storage layer 17 includes one or both of a nonmagnetic metal and an oxide in addition to a Co-Fe-B magnetic layer.
摘要翻译：要解决的问题：提供可以降低写入电流并提高热稳定性的存储元件。解决方案：存储元件包括具有垂直于膜表面的磁化的存储层17，其具有对应于信息变化的磁化方向;具有垂直于膜面的磁化的磁化固定层15，其用作存储在存储层17和设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16.信息由存储层17的磁化方向记录，通过在层叠中注入电子自旋极化而变化方向。这里，施加到存储层17的有效抗磁场的大小被调节为小于存储层17的饱和磁化强度的大小。此外，至少与绝缘层16的存储层17接触的边界面并且与绝缘层16相对的一侧与存储层17接触的另一层（例如，盖层18）由诸如MgO等的氧化物膜形成。此外，除了Co-Fe-B磁性层之外，存储层17还包括非磁性金属和氧化物中的一种或两种。版权所有（C）2012，JPO＆INPIT

87. 发明专利

JP2012059809A Storage element and memory unit 审中-公开
标题翻译：存储元件和存储单元
公开(公告)号：JP2012059809A
公开(公告)日：2012-03-22
申请号：JP2010199717
申请日：2010-09-07
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , HOSOMI MASAKATSU , OMORI HIROYUKI , HIGO YUTAKA , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/161 , G11C11/1659
摘要： PROBLEM TO BE SOLVED: To provide a storage element that can improve heat stability without increase in a write current.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17 and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. The storage layer 17 has a trapezoidal cross-section and an area of a face contacting a boundary face of the insulation layer 16 is larger than that of a face contacting a layer (cap layer 18) on the side opposite to the insulation layer 16.
摘要翻译：要解决的问题：提供可以在不增加写入电流的情况下提高热稳定性的存储元件。解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在存储层17和设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16.信息由存储层17的磁化方向记录，通过在层叠方向上注入电子自旋极化而变化。这里，施加到存储层17的有效抗磁场的大小被调节为小于存储层17的饱和磁化强度的大小。存储层17具有梯形截面和面部的面积接触绝缘层16的边界面的面积大于在与绝缘层16相对的一侧接触层（覆盖层18）的面的接触面积。（C）2012，JPO＆INPIT

88. 发明专利

JP2012059808A Storage element and memory unit 审中-公开
标题翻译：存储元件和存储单元
公开(公告)号：JP2012059808A
公开(公告)日：2012-03-22
申请号：JP2010199716
申请日：2010-09-07
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , HOSOMI MASAKATSU , OMORI HIROYUKI , HIGO YUTAKA , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： G11C11/16 , G11C11/161
摘要： PROBLEM TO BE SOLVED: To provide a storage element that can improve heat stability without increase in a write current.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17 and an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. The insulation layer 16 is composed of MgO. The storage layer 17 is composed of Co-Fe-B and has a B concentration lower in the vicinity of a boundary face with the insulation layer 16 and the B concentration increases with distance from the insulation layer 16.
摘要翻译：要解决的问题：提供可以在不增加写入电流的情况下提高热稳定性的存储元件。解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在存储层17和设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16.信息由存储层17的磁化方向记录，通过在层叠方向上注入电子自旋极化而变化。这里，施加到存储层17的有效抗磁场的大小被调整为小于存储层17的饱和磁化强度的大小。绝缘层16由MgO构成。存储层17由Co-Fe-B组成，并且在与绝缘层16的边界面附近具有较低的B浓度，并且B浓度随着距绝缘层16的距离而增加。版权所有：（C ）2012，JPO＆INPIT

89. 发明专利

JP2012059807A Storage element and memory unit 审中-公开
标题翻译：存储元件和存储单元
公开(公告)号：JP2012059807A
公开(公告)日：2012-03-22
申请号：JP2010199715
申请日：2010-09-07
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , HOSOMI MASAKATSU , OMORI HIROYUKI , HIGO YUTAKA , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a storage element that can improve heat stability without increase in a write current.SOLUTION: The storage element having magnetization perpendicular to a film surface comprises a storage layer 17 with a magnetization direction varying corresponding to information, a magnetization fixed layer 15 having magnetization perpendicular to the film face, which serves as reference of information stored in the storage layer 17, an insulation layer 16 of a nonmagnetic material provided between the storage layer 17 and the magnetization fixed layer 15, and an antiferromagnetic layer 19 adjacent to the magnetization fixed layer 15 on the side opposite to the insulation layer 16 side. Information is recorded by a magnetization direction of the storage layer 17 varied by injection of an electron spin polarized in a lamination direction. Here, a magnitude of an effective anti-magnetic field applied to the storage layer 17 is adjusted to be smaller than a magnitude of saturation magnetization of the storage layer 17. The magnetization fixed layer 15 has unidirectional anisotropy by exchange coupling with the antiferromagnetic layer 19 and the magnetization direction of the magnetization fixed layer 15 is fixed in absence of an external magnetic field.
摘要翻译：要解决的问题：提供可以在不增加写入电流的情况下提高热稳定性的存储元件。解决方案：具有垂直于膜表面的磁化的存储元件包括具有对应于信息变化的磁化方向的存储层17，具有垂直于膜面的磁化的磁化固定层15，其用作存储在存储层17，设置在存储层17和磁化固定层15之间的非磁性材料的绝缘层16和与绝缘层16侧相对的一侧与磁化固定层15相邻的反铁磁层19。信息由存储层17的磁化方向记录，通过在层叠方向注入电子自旋极化而变化。这里，施加到存储层17的有效抗磁场的大小被调节为小于存储层17的饱和磁化强度的大小。磁化固定层15通过与反铁磁层19的交换耦合而具有单向各向异性并且磁化固定层15的磁化方向在不存在外部磁场的情况下是固定的。版权所有（C）2012，JPO＆INPIT

90. 发明专利

JP2012054439A Storage element and storage device 审中-公开
标题翻译：存储元件和存储设备
公开(公告)号：JP2012054439A
公开(公告)日：2012-03-15
申请号：JP2010196418
申请日：2010-09-02
申请人： Sony Corp , ソニー株式会社
发明人： BESSHO KAZUHIRO , HOSOMI MASAKATSU , OMORI HIROYUKI , HIGO YUTAKA , YAMANE ICHIYO , UCHIDA HIROYUKI
IPC分类号： H01L27/105 , H01F10/16 , H01F10/32 , H01L21/8246 , H01L29/82 , H01L43/08
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/161 , G11C11/1659 , H01F10/16 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a storage element which can improve thermal stability without increasing the write current.SOLUTION: The storage element has a storage layer 17 in which the orientation of magnetization changes corresponding to information, a fixed magnetization layer 15 having magnetization perpendicular to the film surface and becoming the reference of information stored in the storage layer, and an intermediate layer 16 of a nonmagnetic material provided between the storage layer and the fixed magnetization layer. When spin polarized electrons are injected in the lamination direction, orientation of magnetization of the storage layer changes and recording of information is carried out. The storage layer includes an alloy region containing at least one of Fe and Co. Furthermore, in the storage layer, effective magnitude of an anti-magnetic field received during a magnetization inversion process is smaller than the saturation magnetization of the storage layer.
摘要翻译：要解决的问题：提供一种可以在不增加写入电流的情况下提高热稳定性的存储元件。解决方案：存储元件具有其中磁化取向对应于信息的存储层17，具有垂直于膜表面的磁化的固定磁化层15并成为存储在存储层中的信息的参考，提供在存储层和固定磁化层之间的非磁性材料的中间层16。当沿层叠方向注入自旋极化电子时，存储层的磁化取向发生变化，进行信息的记录。存储层包括含有Fe和Co中的至少一种的合金区域。此外，在存储层中，在磁化反转处理期间接收的抗磁场的有效幅度小于存储层的饱和磁化强度。版权所有（C）2012，JPO＆INPIT

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