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    • 82. 发明专利
    • Resist developing apparatus
    • 耐用开发设备
    • JPS5732633A
    • 1982-02-22
    • JP10855480
    • 1980-08-04
    • Mitsubishi Electric Corp
    • NAGATOMO MASAOWAKAMIYA WATARUUOTANI SHIGEOHARADA HIROJINISHIOKA KIYUUSAKUKOMORI NOBUFUMI
    • H01L21/30G03F7/30H01L21/027
    • G03F7/30
    • PURPOSE:To enable strict temperature control and accurate control of pattern dimensions in a substrate surface and the edge shape thereof by moving a number of substrates housed in a cassette with vibration through a developer in a thermostatic oven. CONSTITUTION:The cassette 7 in which a substrate 8 is fixed is immersed in a developer 1 set at a given temperature as retained with a magic hand 10 and moved therethrough along a guide rail 9 with vibration. The developing time is adjusted by the forward dimensions of the thermostatic oven 4 and the magic hand 10. When reaching the boundary with the thermostatic oven, the cassette 7 is lifted with a link mechanism and immersed in a rising liquid 2 stored in the adjacent thermostatic oven 5. Then, likewise, it is moved in a highly pure water 3 to wash. Accordingly, a fresh liquid of limited fatigue is fed to the resist surface thereby accomplishing a quick and even development of the resist.
    • 目的:通过使带有振动的容纳在盒中的多个基板通过恒温箱中的显影剂移动,能够对基板表面及其边缘形状进行严格的温度控制和图形尺寸的精确控制。 构成:其中固定有基板8的盒式磁带7浸入设置在用魔术手10保持的给定温度的显影剂1中,并沿着导轨9振动地移动。 显影时间通过恒温炉4和魔术手10的前进尺寸来调节。当与恒温炉到达边界时,盒7用连杆机构提升,并浸没在存储在相邻恒温器中的上升液体2中 然后,同样地,将其在高纯度的水3中移动以进行洗涤。 因此,将有限疲劳的新鲜液体供给到抗蚀剂表面,从而实现抗蚀剂的快速且均匀的显影。
    • 87. 发明专利
    • INFORMATION PROCESSOR
    • JPH04314161A
    • 1992-11-05
    • JP10682691
    • 1991-04-11
    • MITSUBISHI ELECTRIC CORP
    • KOMORI NOBUFUMI
    • G06F9/38G06F13/42
    • PURPOSE:To eliminate malfunction, to simplify a circuit scale and a transfer control, and to accelerate transfer speed by providing a voltage controlled delay circuit on a transfer request signal line between transfer controllers. CONSTITUTION:The voltage controlled delay circuit 11 is provided on the transfer request signal line between transfer control circuits C1 and C2. When long processing time is required, a code representing external memory access is decoded by a decoder Decode 1 at the front stage, and a value representing large delay is latched with a data latch LATCH1 in a state of active '1' with another data. Therefore. a P-channel transistor P3 is turned off, and a P-channel transistor P4 is turned on, and a high control voltage V1 set corresponding to a time required for the external memory access is impressed to the gate of the P-channel transistor P2 of the delay circuit 11, which reduces the amount of current between a power source and the ground. Therefore, the delay time of the delay circuit can be increased, which delays only the start of a transfer request signal S10.