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81. 发明专利

JP2001255669A RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JP2001255669A
公开(公告)日：2001-09-21
申请号：JP2000073923
申请日：2000-03-13
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： KIMURA KAORI , TANAKA TOSHIHIKO , HATTORI KOJI , YOKOYAMA YOSHIYUKI
IPC分类号： G03F7/038 , G03F7/32 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a negative type fine resist pattern with short-wavelength light typified by ArF excimer laser light without leaving resist residue or causing swelling. SOLUTION: A polarity conversion type negative type resist is used and a developing solution having 0.01-0.1% TMAH concentration is used in a developing step.

82. 发明专利

JP2000147746A PRODUCTION OF ELECTRODE WIRING CONDUCTION HOLE AND PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000147746A
公开(公告)日：2000-05-26
申请号：JP2000007857
申请日：2000-01-17
申请人： HITACHI LTD
发明人： HASEGAWA NORIO , TANAKA TOSHIHIKO
IPC分类号： H01L21/027 , G03F1/32 , G03F1/68 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a process for producing electrode wiring conduction holes capable of forming the small electrode wiring conduction holes in a semiconductor element and a process for producing a semiconductor device. SOLUTION: The hole patterns for the electrode wiring conduction holes are transferred to a thin film of the photosensitive material on a wafer by projecting the first light transmitted through translucent regions consisting of a translucent film 4 and the second light which is transmitted through the apertures consisting of the translucent parts 3 disposed in the translucent regions and is the antiphase from the phase of the first light through a lens.

83. 发明专利

JP2000114148A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000114148A
公开(公告)日：2000-04-21
申请号：JP28317998
申请日：1998-10-06
申请人： HITACHI LTD
发明人： CHOKAI MINORU , TERASAWA TSUNEO , TANAKA TOSHIHIKO
IPC分类号： H01L21/027 , G03F9/00
摘要： PROBLEM TO BE SOLVED: To enable high accuracy in alignment between a mask and a wafer in X-ray lithography. SOLUTION: Wafermarks 9 prepared on a wafer 8 are composed of a substance that generates light emission 1, such as fluorescence by irradiation with soft X-ray 3 in an X-ray aligner that transfers a circuit pattern formed on a transfer pattern region 4a of an X-ray mask 4 onto the wafer 8, by irradiating the wafer 8 with the soft X-ray 3 which has passed through the X-ray mask 4 through an image-forming optical system which comprises reflecting mirrors 6 and 7. The soft X-ray 3, reflected by the alignment mark pattern 5 on the X-ray mask 4, is converged to form an image which is irradiated onto the wafer marks 9 on the wafer 8, and the light emission 1 such as fluorescence generated at this moment is detected by an optical detector 2, thereby enabling high accuracy of alignment between the X-ray mask 4 and the wafer 8.

84. 发明专利

JP2000019709A SEMICONDUCTOR DEVICE AND PATTERN FORMING METHOD 失效
公开(公告)号：JP2000019709A
公开(公告)日：2000-01-21
申请号：JP18851898
申请日：1998-07-03
申请人： HITACHI LTD
发明人： SEKIGUCHI TOMONORI , TANAKA TOSHIHIKO , YAMANAKA TOSHIAKI , SAKATA TAKESHI , KIMURA KATSUTAKA
IPC分类号： G03F1/00 , G03F1/32 , G03F1/36 , G03F1/68 , G03F7/20 , H01L21/027 , H01L21/3213 , H01L21/8242 , H01L23/528 , H01L27/10 , H01L27/105 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To prevent short-circuiting and wire breakage arising at an end part of an L & S pattern, etc., since short-circuiting or wire breakage occurs at word lines and data line ends due to interference of diffracted light produced at a pattern end in a boundary part between a memory array and a sub-word driver or sense amplifier, when minute word lines and data lines having line widths smaller than a wavelength are patterned on a memory. SOLUTION: In a mask pattern (a) for patterning word lines and data lines, lengths of word lines having end parts neighboring each other are changed to shift their ends from each other, and further the ends of word lines are slanted. Separation in a resist pattern and contact of patterns with each other can be thereby prevented, and also breakage of wires to be patterned and short- circuiting between wires can be prevented.

85. 发明专利

JPH11238478A COLOR CATHODE-RAY TUBE 失效
公开(公告)号：JPH11238478A
公开(公告)日：1999-08-31
申请号：JP3894298
申请日：1998-02-20
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO
IPC分类号： H01J29/54
摘要： PROBLEM TO BE SOLVED: To prevent degradation of focus resulting from that the electron beam having passed a magnet assembly passes through the main lens off from its center. SOLUTION: A magnet assembly to be fitted on the neck part of a color cathode-ray tube is formed from a plurality of ring-shaped magnets in pairs, and on at least one of these ring-shaped magnets 8 and 9, ring-shaped magnets 10 and 11 in a pair to generate opposite polarities to those of the existing ring-shaped magnets are arranged so that the polarities of the magnetic poles from the electron beam inlet to the outlet assume such a sequence as negative, positive, positive, and negative, and thereby the electron beam 1 is allowed to pass the center of the main lens 4, and the electron beam moving amount Dn on a fluorescent screen 5 is nullified.

86. 发明专利

JPH10163084A FORMATION OF PROCESS PATTERN 失效
公开(公告)号：JPH10163084A
公开(公告)日：1998-06-19
申请号：JP31743096
申请日：1996-11-28
申请人： HITACHI LTD
发明人： YAMANAKA RYOKO , TANAKA TOSHIHIKO
IPC分类号： H01L21/302 , H01L21/027 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To solve problems both of light absorption and reflection by a method wherein a surface treatment is performed for protecting an active hydroxyl group of a film surface, energy rays are emitted on a desired spot of this film, a compound layer with an etching resistance is selectively formed on the surface of a nonexposure region or of an exposure region of a ground film for processing the film having a compound layer as an etching mask. SOLUTION: The surface of a substrate 2 with the formation of an aluminum film 1 is brought in cotact with a surface treatment agent 3 containing a light- absorbing group and a hydrophobic group, an active hydroxyl group on the surface of the aluminum film 1 is protected and a hydrophobic altered layer 4 is formed on this film surface 1. Next, far-ultraviolet radiation 5 is made through an exposure mask 6 for exposing a surface oxide film of an exposure part. Then, this substrate 2 is brought in contact with a solution of metasilicate 7 so as to form oxide silicon 8 only on the exposed part surface where a basic hydroxyl group is exposed and dry etching is performed having the oxide silicon as mask so as to form a minute wiring pattern 10. Thereby, minute processing can be performed without being subjected to a problem caused by alight absorption inside a resist or a substrate reflection.

87. 发明专利

JPH0936017A PATTERN FORMING METHOD AND SEMICONDUCTOR MANUFACTURING METHOD USING THE PATTERN FORMING METHOD 失效
公开(公告)号：JPH0936017A
公开(公告)日：1997-02-07
申请号：JP18382695
申请日：1995-07-20
申请人： HITACHI LTD
发明人： HASEGAWA NORIO , TERASAWA TSUNEO , SHIRAISHI HIROSHI , HAYANO KATSUYA , IMAI AKIRA , TANAKA TOSHIHIKO , ASAI NAOKO , OKAZAKI SHINJI
IPC分类号： G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To eliminate the limitation on the manufacturing steps to which this invention is applied and to improve the depth of focus by forming an overcoat film of a thickness greater than a half of the sum of surface step difference of a substrate, focus distribution width in one-exposure field in projection exposure and depth of focus of a desired resolving pattern. SOLUTION: Photoresist 12 is formed on a substrate 11 with a step and a thick overcoat film 13 having flattened surface is formed. The thickness of the overcoat film 13 is greater than a half of the sum of surface step difference of a substrate, focus distribution width in one exposure field in projection exposure and depth of focus of a predetermined resolving pattern. The method can remove the limitation on the manufacturing steps to which the invention is applied can improve effective depth of focus and can improve accuracy of pattern formation.

88. 发明专利

JPH08220777A PATTERN FORMING METHOD 失效
公开(公告)号：JPH08220777A
公开(公告)日：1996-08-30
申请号：JP3042495
申请日：1995-02-20
申请人： HITACHI LTD
发明人： YAMANAKA RYOKO , TANAKA TOSHIHIKO , OKAZAKI SHINJI
IPC分类号： G03F1/68 , G03F1/80 , G03F7/38 , G03F7/40 , H01L21/027 , G03F1/08
摘要： PURPOSE: To form a resist pattern having a fine satisfactory shape and a high aspect ratio through relatively simple processes even in the case of exposure using far UV, soft X-rays or electron beams which are largely absorbed in a resist. CONSTITUTION: Desired positions on a resist film 4 formed by coating on a substrate 5 to be worked are irradiated with energy beams 1 to form an acid or base donor/acceptor distribution on the surface of the resist film. The resist film is then immersed in or brought into contact with a soln. 6 of a compd. having such a property as to cause deposition from the soln. by a pH change to selectively form an etching mask 7 in the unexposed region or the exposed region 3 of the resist film and the resist film is developed with plasma 9.

89. 发明专利

JPH0845820A ALIGNMENT ACCURACY INSPECTION METHOD 失效
公开(公告)号：JPH0845820A
公开(公告)日：1996-02-16
申请号：JP17798794
申请日：1994-07-29
申请人： HITACHI LTD , HITACHI CHEMICAL CO LTD
发明人： HATTORI KOJI , TANAKA TOSHIHIKO , IMAI AKIRA , YAMAMOTO JIRO , UENO TAKUMI , ONOZUKA TOSHIHIKO , MORIUCHI NOBORU , SHIRAI SEIICHIRO
IPC分类号： G03F9/00 , H01L21/027 , H01L21/66
摘要： PURPOSE:To inspect the accuracy of alignment without developing a radiation sensitive composition film which is exposed to light by using the change of a film thickness of the radiation sensitive composition due to exposure and measuring the intensity distribution of reflected light of an exposed part and unexposed part adjacent thereto to measure the alignment accuracy of a mask. CONSTITUTION:A region including a backing thin film pattern is exposed to such light that a radiation sensitive composition film 3 hardly brings about the change of a film thickness. The intensity of reflected light is obtained from the function of position on a substrate. Thereby, the intensity distribution of reflected light is obtained. A relative position between the exposure region 5, the film thickness of which is changed, and a backing thin film pattern 2 can be obtained.

90. 发明专利

JPH07226358A RESIST DEVELOPING METHOD 失效
公开(公告)号：JPH07226358A
公开(公告)日：1995-08-22
申请号：JP1610794
申请日：1994-02-10
申请人： HITACHI LTD
发明人： TANAKA TOSHIHIKO
IPC分类号： G03F7/32 , B81C99/00 , H01L21/027
摘要： PURPOSE:To effectively prevent a resist pattern from falling down without deteriorating it in shape by a method wherein fluid is replaced with liquid specified in specific gravity, surface tension, and solubility as the resist pattern is soaked in fluid. CONSTITUTION:Resist 2 is applied onto a board 1. Then, the resist 2 is irradiated with exposure light 3. Developing solution is applied to the wafer 1, and a resist pattern 2a is formed in the developing solution 4. Thereafter, the wafer 1 is rinsed enough with flowing ultra-pure water 5. Then, keeping the water 1 soaked in pure water, perfluoroalkyl polyether 6 is poured over the wafer 1 from above. Perfluoroalkyl polyether is larger than water in specific gravity and not mixed with water, and they repel each other, so that perfluoroalkyl polyether 6 stays tunder water 5. Then, water is completely drained out, perfluoroalkyl polyether left on the wafer 1 is evaporated, and thus the resist pattern 2a is formed.

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