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71. 发明专利

JPS61158893A APPARATUS FOR PRODUCING SINGLE CRYSTAL 失效
公开(公告)号：JPS61158893A
公开(公告)日：1986-07-18
申请号：JP28127284
申请日：1984-12-29
申请人： SUMITOMO ELECTRIC INDUSTRIES
发明人： TADA KOJI , TATSUMI MASAMI , KOTANI TOSHIHIRO , SAWADA SHINICHI , NAMIKAWA YASUO
IPC分类号： C30B15/26 , C30B27/02 , H01L21/18 , H01L21/208
摘要： PURPOSE:To detect the information concerning the pattern and the dimension of single crystal during the pulling up operation, by radiating X-ray parallelly from a bundle fiber into a chamber, and guiding the X-ray to an X-ray detector. CONSTITUTION:X-ray generated by the X-ray generator 2 placed out of the chamber 1 is introduced through the bundle fiber 3 into the chamber 1, and radiated in the form of a linearly extended beam from the radiation terminal 19 supported by the supporting rod 17 through the heat-insulating material 12 and the heater 11 to the single crystal 5 pulled up from the molten raw material 10 in the crucible 9. The X-ray passed outside of the crystal (the X-ray corresponding to the ines A-C and B-D) and the attenuated X-ray passed through the single crystal (the X-ray corresponding to the line C-D) are received by the receptor end 20 and guided through the bundle fiber 4 to the X-ray detector 6 placed out of the chamber 1 to acquire unidimensional information. The vertically movable rods 17, 18 are shifted vertically at the same speed to acquire a large amount of unidimentional information, from which a two-dimensional image is constructed.

72. 发明专利

JPS6127359B2 JPS6127359B2 - 失效
公开(公告)号：JPS6127359B2
公开(公告)日：1986-06-25
申请号：JP5519579
申请日：1979-05-04
申请人： Moobiru Soraa Enaajii Corp
发明人： DAGURASU EI IEETSU , AASAA II HATSUCHI , JEFU EMU GOORUDOSUMISU
IPC分类号： C30B15/26 , C30B15/34
CPC分类号： C30B15/26 , C30B15/34 , Y10T117/1008 , Y10T117/1044

73. 实用新型

JPS617577U JPS617577U - 失效
公开(公告)号：JPS617577U
公开(公告)日：1986-01-17
申请号：JP8854784
申请日：1984-06-14
IPC分类号： C30B15/26 , C30B29/40 , H01L21/02 , H01L21/208

74. 实用新型

JPS604573U 失效
公开(公告)号：JPS604573U
公开(公告)日：1985-01-14
申请号：JP9563783
申请日：1983-06-21
IPC分类号： C30B15/26 , C30B15/20

75. 实用新型

JPS58148072U 失效
公开(公告)号：JPS58148072U
公开(公告)日：1983-10-05
申请号：JP4669282
申请日：1982-03-31
IPC分类号： C30B15/26 , C30B15/20 , C30B15/30 , C30B15/32

76. 发明专利

JPS5836999A PULLING UP DEVICE FOR SINGLE CRYSTAL SEMICONDUCTOR 失效
公开(公告)号：JPS5836999A
公开(公告)日：1983-03-04
申请号：JP13347481
申请日：1981-08-26
申请人： TOSHIBA CERAMICS CO
发明人： KAWANABE ASAJI
IPC分类号： C30B15/26 , H01L21/208
摘要： PURPOSE:To control the diameter of a single crystal semiconductor ingot without the influence of fluctuations in the melt surface of a molten semiconductor by disposing the photodetecting part of a control mechanism for the diameter of the ingot in the upper part of a chamber in such a way as to face the melt surface. CONSTITUTION:Since the radiation light of a melt surface is detected by a photodetecting part 16 disposed right above molten Si 12, the measuring place is constant despite the vertical fluctuation in the melt surface and the errors owing to the oscillation of an ingot are small. Further, a photodetecting part 16 is provided upper than an Ar gas supply port 9, sticking of gases such as SiO is difficult and the errors in measurement occurring in said sticking are small. Therefore, the accurate information relating to the diameter of the ingot is transmitted to a control mechanism for diameter not shown, and desirable control for diameter is accomplished. Since the outputting of unnecessary operation signals from the control mechanism for diameter is eliminated, the tendency toward an increase in the variance of the impurity concn. in the single crystal ingot is suppressed.

77. 实用新型

JPS588781Y2 失效
公开(公告)号：JPS588781Y2
公开(公告)日：1983-02-17
申请号：JP10185979
申请日：1979-07-25
IPC分类号： C30B15/14 , C30B15/20 , C30B15/26

78. 发明专利

JPS57179097A METHOD AND APPARATUS FOR GROWING SINGLE CRYSTAL 失效
公开(公告)号：JPS57179097A
公开(公告)日：1982-11-04
申请号：JP6324781
申请日：1981-04-28
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： TAKASU SHINICHIROU , WATANABE MASAHARU , USAMI TOSHIROU
IPC分类号： C30B15/14 , C30B15/20 , C30B15/26
摘要： PURPOSE:To manufacture a single crystal with fine striation by detecting information on the interface berween crystal and melt in the vicinity of the interface to control radiation, changing and correcting the internal temp. gradient of the crystal, and growing a single crystal at a uniform temp. gradient. CONSTITUTION:A seed crystal 4 attached to the holder 32 of a shaft 33 is dipped in a melt 6 and pulled up to manufacture a shoulder. Radiation from the infrared radiation lamps 91', 91''' of an infrared radition lamp device 9 is coverged to irradiate a part about 2cm over the inteface between crystal and melt, thereby applying infrared radiation to a straight body part 5. The radiation from the lamps 91', 91''' is controlled by feeding back the signal of deviation between an electric signal from an optical diameter detector 92 and a standard voltage generator 93 to a differential amplifier 95 and by converting the signal into the quantity of radiation. A heating element 23 made of graphite is supplied with electricity from a constant power circuit 10 with a power change inhibited to

79. 发明专利

JPS5635636B2 失效
公开(公告)号：JPS5635636B2
公开(公告)日：1981-08-18
申请号：JP1907973
申请日：1973-02-15
IPC分类号： C30B15/26

80. 实用新型

JPS5619573U 失效
公开(公告)号：JPS5619573U
公开(公告)日：1981-02-20
申请号：JP10185979
申请日：1979-07-25
IPC分类号： C30B15/14 , C30B15/20 , C30B15/26

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