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71. 发明专利

JPS6259841B2 失效
公开(公告)号：JPS6259841B2
公开(公告)日：1987-12-14
申请号：JP8541180
申请日：1980-06-24
申请人： HITACHI CABLE
发明人： ENDO TAKESHI , KUMA SHOJI , NUMAJIRI FUMYA
IPC分类号： H01B7/26

72. 发明专利

JPS6016688B2 失效
公开(公告)号：JPS6016688B2
公开(公告)日：1985-04-26
申请号：JP14252578
申请日：1978-11-17
申请人： HITACHI CABLE
发明人： SATO MASAKATSU , TAKAHATA NORIO , SOMA KENICHIRO , KUMA SHOJI , FUJOSHI YASUO , CHIBA TAKESHI , TAWARASAKO SHUICHI
IPC分类号： H01B13/14 , B29C35/08 , B29K105/24 , B29L31/34 , H01B13/06

73. 发明专利

JP2003214780A HEAT PIPE 审中-公开
公开(公告)号：JP2003214780A
公开(公告)日：2003-07-30
申请号：JP2002013028
申请日：2002-01-22
申请人： HITACHI CABLE
发明人： OZAKI TOSHINORI , KODAIRA MUNEO , KUMA SHOJI , ISAKA KOICHI
IPC分类号： F28D15/02 , C23C18/31 , C23C18/38 , C23C18/48 , C23C18/52
摘要： PROBLEM TO BE SOLVED: To provide a heat pipe possible to prevent the lowering of heat conductivity by restricting decomposition and deterioration of the low-level alcohol sealed inside. SOLUTION: The inner surface of a copper pipe sealed with the low-level alcohol as a heating medium is formed with a thin film such as a Sn plating film at 0.05-2 μm of thickness. Alternatively, the hydroxy compound at 20-2000 ppm is added to the low-level alcohol. COPYRIGHT: (C)2003,JPO

74. 发明专利

JPH10309564A WATER PURIFIER 失效
公开(公告)号：JPH10309564A
公开(公告)日：1998-11-24
申请号：JP11807797
申请日：1997-05-08
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , KUMA SHOJI
IPC分类号： C02F1/00 , C02F1/50
摘要： PROBLEM TO BE SOLVED: To effectively prevent a filter from being clogged by preventing various bacteria from being propagated abnormally. SOLUTION: In a water purifier provided with a container 1 for temporarily storing drinking water or a drinking liquid, the container 1 is formed of Cu or an alloy of which Cu content is >=0.2 wt.%. In the water purifier provided with the container 1 for temporarily storing the drinking water or the drinking liquid, a part excluding the container 1 and contacting with the drinking water or the drinking liquid (e.g. a net member 4, an upper holding member 10, a lower part holding member 11) is formed of Cu or an alloy of which Cu content is >=0.2 wt.%.

75. 发明专利

JPH09330808A FIBER FOR CONSTITUTING MAGNETIC CIRCUIT 失效
公开(公告)号：JPH09330808A
公开(公告)日：1997-12-22
申请号：JP14713196
申请日：1996-06-10
申请人： HITACHI CABLE
发明人： KUMA SHOJI , SATO JUNICHI , NOMURA KATSUMI
IPC分类号： H01F1/18
摘要： PROBLEM TO BE SOLVED: To reduce the dimension of a magnetism applied device by making the circuit configuration simpler by coating the outer periphery of a linear core material made of a high-permeability material with a superconducting material composed of a magnetic insulator. SOLUTION: A core material 11 made of a high-permeability material, such as Supermalloy, etc., is covered with a coating 12 made of a superconducting material, such as a Bi-based oxide superconducting material. In addition, an outside magnetic conductor layer made of the same material as the core material 11 is coaxially provided on the coating 12. Moreover, the core material 11 and coating 12 are separated from each other with a layer of a different metal, such as silver, etc., and the surface of the coating 12 is covered with a layer of a different metal, such as silver, etc. Therefore, the loss of a magnetic circuit can be reduced and the magnetic circuit which has been made in a large size due to leakage can be made in a very small size.

76. 发明专利

JPH09231840A ELECTROCONDUCTIVE MEMBER OF OXIDE SUPRECONDUCTIVE MATERIAL AND SYSTEM ELECTROCONDUCTIVE MEMBER 失效
公开(公告)号：JPH09231840A
公开(公告)日：1997-09-05
申请号：JP3667796
申请日：1996-02-23
申请人： HITACHI CABLE
发明人： SATO JUNICHI , SASAOKA TAKAAKI , KUMA SHOJI
IPC分类号： C01G1/00 , C01G3/00 , H01B12/00 , H01F6/06 , H01L39/00 , H01L39/14
摘要： PROBLEM TO BE SOLVED: To provide selectability for the mechanical and thermal properties and lessen the electric loss by forming an intended electroconductive member so that it contains at least a sort of oxide superconductor, and using it within a specified range of resistance. SOLUTION: An electrocinductive member using an oxide superconductive material should favorably be used in the resistance range 10 -10 Ω.m as the low resistance-superconductive condition, but it is still more preferably to be used in the range 10 -10 Ω.m to exhibit a smaller resistance than that of non-oxygen copper at room temp. (300K), or in the range 10 -10 Ω.m to exhibit a smaller resistance than that of oxygen-free copper at 77K. The discussion does not destructively apply to such an oxide superconductive material of Cu series containing Bi, but to any which has a high crystal current density and whose amperage able to achieve the low resistance condition is large.

77. 发明专利

JPH09142997A PRODUCTION OF GAAS SINGLE CRYSTAL 失效
公开(公告)号：JPH09142997A
公开(公告)日：1997-06-03
申请号：JP30298095
申请日：1995-11-21
申请人： HITACHI CABLE
发明人： SUZUKI TAKASHI , SHIBATA MASATOMO , KUMA SHOJI
IPC分类号： C30B15/20 , C30B27/02 , C30B29/42 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To uniformly distribute the carbon concn. in a GaAs single crystal within a prescribed range with good accuracy by a simple control method in a process for producing the single crystal by a liquid sealed pulling-up method (LEC method). SOLUTION: Gaseous carbon monoxide or gas which generates carbon monoxide in a vessel 1 for crystal growth is introduced into the vessel 1. The concn. of the carbon monoxide in the vessel 1 is set at a prescribed value and thereafter, the crystal growth is started. The concn. of the carbon monoxide in an inert gas is kept detected during the crystal growth. The rate of generating the carbon monoxide generated per unit time in the vessel 1 is then determined. The gas substitution rate for substituting the gas in the vessel 1 necessary for controlling the concn. of the carbon monoxide in the vessel 1 to a desired value is determined from the determined generation rate and the volume of the vessel 1. The flow rate of the gas to be introduced into the vessel 1 during the crystal growth and the flow rate of the gas to be discharged from the vessel 1 are controlled in accordance with the gas substitution rate. The gaseous carbon monoxide or the gas which generates carbon monoxide in the vessel 1 for crystal growth is introduced into the vessel 1. The GaAs single crystal is grown while the pressure in the vessel 1 under the crystal growth is kept at .

78. 发明专利

JPH08167735A LIGHT EMITTING ELEMENT 失效
公开(公告)号：JPH08167735A
公开(公告)日：1996-06-25
申请号：JP30743094
申请日：1994-12-12
申请人： HITACHI CABLE
发明人： UNNO TSUNEHIRO , SHIBATA MASATOMO , WATANABE MASATOSHI , TAKAHASHI TAKESHI , KUMA SHOJI
IPC分类号： H01L33/12 , H01L33/14 , H01L33/32 , H01S5/00 , H01S5/323 , H01L33/00 , H01S3/18
摘要： PURPOSE: To enable a light emitting diode composed of nitrogen compound to emit ultraviolet, blue, and green light rays at superhigh luminance by making it possible to grow a high-quality active layer in the diode. CONSTITUTION: After an AlN buffer layer 6 is formed on a sapphire substrate 7, an n-type InGaN current diffusing layer 5, an n-type InGaN clad layer 4, an InGaN active layer 3, a p-type InGaN clad layer 2, and a p-type InGaN current diffusing layer 1 are successively formed on the buffer layer 6. The GaN mixed crystal ratios of the active layer 3 and current diffusing layers 1 and 5 are respectively set at 0.6 and 0.7 so that the mixed crystal ratio difference between the active layer 3 and current diffusing layers 1 and 5 can be controlled to 0.2. When the composition of the current diffusing layers 1 and 5 are brought near to the composition of the active layer 3 in such a way, the quality of the active layer 3 can be improved.

79. 发明专利

JPH0864567A SURFACE TREATMENT OF EPITAXIAL WAFER 失效
公开(公告)号：JPH0864567A
公开(公告)日：1996-03-08
申请号：JP19976994
申请日：1994-08-24
申请人： HITACHI CABLE
发明人： SATO TOYOHIKO , UNNO TSUNEHIRO , KUMA SHOJI
IPC分类号： C30B33/08 , H01L21/304 , H01L21/308
摘要： PURPOSE: To enhance the velocity of dissolution of an Si crystal by a method wherein GaAs or GaAlAs epitaxial wafers with the Si crystal adhered on their surfaces are dipped in an HF tank of a specified concentration or higher in the range of a special temperature in the range of a special time and thereafter, are dipped in an aqueous solution, which is a strong alkali, and the Si crystal is selectively dissolved. CONSTITUTION: A wafer carrier 1, in which GaAs epitaxial wafers or GaAlAs epitaxial wafers With an Si crystal adhered on their surfaces are set, is dipped in an HF tank 2 of a concentration of 20% or higher at a temperature of 0 deg.C or higher and 50 deg.C or lower in a hour of 10 minutes or longer to 30 minutes or shorter and an oxide film on the surfaces adhered with the Si crystal is removed. After that, the wafer carrier 1 is rapidly moved to a pure water water tank 3 and after being dipped in the water tank 3 for about 10 seconds, the carrier 1 is moved to a KOH water tank 4, which is a strong alkali, the Si crystal is selectively dissolved and the dissolution of the Si crystal is made to accelerate more effectively. Thereby, the time to take for the dissolution of the Si crystal can be significantly shortened and the epitaxial wafers can be produced at lower cost.

80. 发明专利

JPH07245854A MARKER LAMP FOR AERIAL TRANSMISSION LINE 失效
公开(公告)号：JPH07245854A
公开(公告)日：1995-09-19
申请号：JP3135494
申请日：1994-03-01
申请人： HITACHI CABLE , CHUGOKU ELECTRIC POWER
发明人： KAJITANI TADASHI , YOSHINO TATSUYA , OTAKA KOJI , SHIBATA MASATOMO , TATE HISAFUMI , KUMA SHOJI , TOYOSHIMA MASAHIKO
IPC分类号： H02G7/00 , G08G5/00
摘要： PURPOSE:To lessen the number of extinguished LED's and besides, enable a marker lamp to be visually recognized from every angle even if trouble occurs in some LED's, in the marker lamp where a plurality of LED's are installed on the circumferential face of an aerial transmission line. CONSTITUTION:A power circuit 2, which performs rectification, etc., is connected to an induction coil 1 which generates a current by the induction by the transmitted current of a transmission line. An LED connection circuit is constituted, in which a plurality of series circuits in each of which a plurality of LED's 4 are connected in series together with resistors 3 are connected in parallel to the power circuit 2. LED's 4 on each series circuit are arranged to stand in a line in the circumferential direction of a transmission line. Accordingly, even if one LED 4 causes intermission trouble, extinguished LED's 4 are limited to those on one row in the circumferential direction of the series circuit where the faulty LED 4 lies, so the marker lamp can be recognized at any angles.

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