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1. 发明专利

JPH01264995A PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH01264995A
公开(公告)日：1989-10-23
申请号：JP9110288
申请日：1988-04-13
申请人： HITACHI CABLE
发明人： SEKI MINORU , TAWARASAKO SHUICHI
IPC分类号： H01L21/208 , C30B27/02
摘要： PURPOSE:To suppress the polycrystallization during the growth of the single crystal and to decrease the concn. of carbon in the crystal by adopting the constitution consisting in inserting the bottom end of a specific cylindrical body into a liquid sealing layer without directly inserting a sub-heater for local heating in order to suppress the polycrystallization into the liquid sealing layer at the time of pulling up the compound semiconductor single crystal by an LEC method. CONSTITUTION:A crystal raw material melt 4 housed in a crucible 3 heated by a heater 1 is covered by the liquid sealing layer 5 and the single crystal 6 grown by pulling up the same from the melt 4 is pulled up while heating the crystal 6 by the cylindrical sub-heater 7 provided on the outside circumference of the single crystal 6. The under-mentioned constitution is added in this method: At least either of the inside or outside surface of the sub-heater 7 is covered by the cylindrical body 8 which is made of pyrolytic boron nitride and projects downward from the bottom end of the sub-heater 7. The bottom end of the above-mentioned cylindrical body 8 is inserted into the liquid sealing layer 5 without bringing the sub-heater into contact with the liquid sealing layer 5.

2. 发明专利

JPS63239191A PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS63239191A
公开(公告)日：1988-10-05
申请号：JP7133687
申请日：1987-03-27
申请人： HITACHI CABLE
发明人： YASUDA SADAO , TAWARASAKO SHUICHI , SEKI MINORU
IPC分类号： C30B27/02
摘要： PURPOSE:To enhance the purity of the title single crystal by preheating a crucible contg. a raw material and a capsulating agent by a separate melting furnace to enclose the raw material with the capsulating agent, and then transferring the crucible to a pulling up furnace to grow a single crystal at the time of producing the compd. semiconductor single crystal by the LEC method. CONSTITUTION:A seed crystal is brought into contact with the raw material soln. enclosed by the capsulating agent in the pulling up furnace, and pulled up the seed crystal to produce the compd. semiconductor single crystal. In this case, the following constitution is used. Namely, the raw materials 5 and 6 and capsulating agent 7 contained in the crucible 4 is heated (heater 2) by a melting furnace 1 not using a carbon material in an inert gas atmosphere to melt the capsulating agent 7 to enclose the raw materials 5 and 6 with the capsulating agent 7, the crucible 4 contg. the materials is transferred into the pulling up furnace from the melting furnace 1, and a single crystal is grown.

3. 发明专利

JPH0550480B2 失效
公开(公告)号：JPH0550480B2
公开(公告)日：1993-07-29
申请号：JP25982588
申请日：1988-10-14
申请人： HITACHI CABLE
发明人： INADA TOMOKI , OTOGI YOHEI , TAWARASAKO SHUICHI , KUMA SHOJI
IPC分类号： C30B29/42 , C30B33/02

4. 发明专利

JPH02208288A PRODUCTION OF SINGLE CRYSTAL OF III-V COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH02208288A
公开(公告)日：1990-08-17
申请号：JP2936189
申请日：1989-02-08
申请人： HITACHI CABLE
发明人： SEKI MINORU , TAWARASAKO SHUICHI , NAGAO SHOICHI
IPC分类号： C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To readily prolong life of crucible by producing specific crystal in a crucible, supplying III-element into remained raw material melt in liquid state, cooling and semi-solidifying the melt remainder. CONSTITUTION:A raw material melt of Ga and As is formed in a crucible 5 made of pyrolytic BN by superheating with a heater 4. Next, the melt 9 is covered with a liquid of B2O3 layer 10 and a seed crystal 7 fixed to a pull-up shaft 8 is brought to contact with the melt 9 through the layer 10, then the shaft 8 is pulled up with rotating, thus crystal is grown around the seed crystal 7 to obtain pulled-up grown crystal 6. Further, the crystal 6 is pulled up and melt remainder 9 and B2O3 10 are remained in the crucible 5. Next, the crucible 5 is arisen and crystal plate 2 of III-V compound in bottom part of the vessel 1 is melted, then liquid Ga 3 is flowed out into the melt remainder 9. Further, the crucible 5 is lowered and heating by the heater 4 is stopped, then cooled to >=30 deg.C, thus the remainder 9 is semi-solidified and removed, then the crucible 5 is re-used to produce single crystal of III-V compound semiconductor (e.g. GaAs).

5. 发明专利

JPH01201925A METHOD OF HEAT TREATMENT OF GALLIUM ARSENIDE SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH01201925A
公开(公告)日：1989-08-14
申请号：JP2628888
申请日：1988-02-05
申请人： HITACHI CABLE
发明人： UNOME FUMIICHIRO , OKUBO SEIICHI , TAWARASAKO SHUICHI
IPC分类号： C30B29/42 , C30B33/00 , C30B33/02 , H01L21/324
摘要： PURPOSE:To improve economic factors, reduce the delivery time by minimizing stock quantity of products and cope with requirent of even specific heat treatment in a short time, by treating heat sliced GaAs substrates in a state that they are placed in a hollow cylindrical GaAs ingot and the ingot is sealed. CONSTITUTION:Sliced GaAs substrates 2 are housed in a hollow cylindrical GaAs ingot 1 and then, upper and lower ends of the ingot 1 are closed by GaAs blocks 3 and 4. Then, the GaAs substrates are treated with heat. When treated, a small amount of As which is dissociated from the surface of GaAs elevates atmospheric pressure in the ingot 1 and its pressure prevents further dissociation of As. Thus, the GaAs substrates 2 perform heat treatment without producing thermally modified layers.

6. 发明专利

JPS6322259A SEMICONDUCTOR WAFER GRINDING METHOD AND DEVICE THEREOF 失效
公开(公告)号：JPS6322259A
公开(公告)日：1988-01-29
申请号：JP16280286
申请日：1986-07-10
申请人： HITACHI CABLE
发明人： MARUYAMA TAKATOSHI , TAWARASAKO SHUICHI
IPC分类号： B24B9/00 , B24B9/06 , H01L21/304
摘要： PURPOSE:To prevent chipping and stone loading from occurring as well as to make accuracy of finishing in a wafer and service life in a grindstone improvable, by moving the wafer onto a machining surface of the finishing grindstone installed as connected to the same driving shaft after grinding it with a roughing grindstone, and chamfering it. CONSTITUTION:When a wafer 1 is set to a chucking part 3 completely, a driving shaft 4 is moved in a horizontal direction, and a roller 5 comes into contact with a copying model 2 whereby a rough grindstone 7 and the chucking part 3 are rotated, and rough grinding for the circumference of the wafer 1 takes place is accordance with a profile of the copying model 2. And, the driving shaft 4 is moved horizontally, and the roller 5 comes off the copying model 2. Next, when travel of the driving shaft 4 is over, the wafer 1 goes down up to a grinding position of a finishing grindstone 8, whereby the driving shaft 4 travels again and the copying model 2 an the roller 5 are made contact with each other, so that the wafer 1 is chamfered by the finishing grindstone 8. Thus, the wafer is ground by two grindstones different in grain size for both roughing and finishing operations so that accuracy of finishing and machining efficiency are well improved and, what is more, service life in these grindstones is prolongable.

7. 发明专利

JPS6291489A METHOD FOR GROWING GAAS CRYSTAL 失效
公开(公告)号：JPS6291489A
公开(公告)日：1987-04-25
申请号：JP23064285
申请日：1985-10-16
申请人： HITACHI CABLE
发明人： SEKI MINORU , TAWARASAKO SHUICHI , YASUDA SADAO
IPC分类号： C30B29/42 , C30B15/20 , H01L21/18 , H01L21/208
摘要： PURPOSE:To grow the titled crystal with a small standard deviation of the outer diameters of the crystals and with good reproducibility by detecting the inclination of the shape of the pulled-up crystal, selecting plural temp. programs stored in a microcomputer in accordance with the inclination, and controlling the temp. CONSTITUTION:A crystal 3 is pulled up with a pulling shaft from the melt 5 in a crucible 6 through a seed crystal 2, the diameter of the crystal at that time is calculated from the pulling length (l) of the crystal 3 after seeding detected by a magnetic scale 11 and a load cell 12 and the weight of the crystal, and the inclination theta of the crystal shape from seeding to the time when the crystal is pulled by the length (l) is obtained. Then a temp. program shown by the curve (a) in the graph is selected when (a) theta>+3 deg.C, the temp. program (b) shown by the curve (b) in the graph is selected when (b) +3 deg.>=theta>=-3 deg., and the temp. program shown by the curve (c) in the graph is selected when (c) theta

8. 发明专利

JPH069290A METHOD FOR GROWING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH069290A
公开(公告)日：1994-01-18
申请号：JP16870192
申请日：1992-06-26
申请人： HITACHI CABLE
发明人： WACHI MICHINORI , MIZUNIWA SEIJI , INADA TOMOKI , TAWARASAKO SHUICHI
IPC分类号： C30B15/10 , C30B15/14 , C30B29/42 , H01L21/208
摘要： PURPOSE:To reduce the concentration of carbon in a single crystal by coating graphite with a pyrolytic graphite and using the coated graphite as the hot-zone constituting member for the growth of a single crystal. CONSTITUTION:Graphite coated with a pyrolytic graphite is used as a hot-zone constituting member of a compound semiconductor single crystal growing apparatus. A compound semiconductor raw material such as polycrystalline GaAs and a liquid sealant 7 such as B2O3 are charged at a prescribed ratio into a pyrolytic boron nitride crucible 5 placed in the main chamber of a high-pressure vessel 1 filled with an inert gas. The raw material is heated and melted with a heater 8, a seed crystal 11 having a crystallographic azimuth of and held on the tip of a holder 10 attached to an upper shaft 9 is immersed in the molten liquid to effect the seeding and a single crystal 11 is grown from the molten liquid by pulling up the upper shaft 9 at a pulling rate of 9-12mm/hr while controlling the power of the heater 8 to obtain the objective high-purity compound semiconductor single crystal such as GaAs single crystal having an impurity carbon concentration of cm .

9. 发明专利

JPH04280893A PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL AND RAW MATERIAL SUPPORTING MEMBER THEREFOR 失效
公开(公告)号：JPH04280893A
公开(公告)日：1992-10-06
申请号：JP4323691
申请日：1991-03-08
申请人： HITACHI CABLE
发明人： WACHI MICHINORI , TAWARASAKO SHUICHI
IPC分类号： C30B15/02 , C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To stably grow gallium arsenide crystal having extremely low compositional fluctuation while suppressing the sublimation and evaporation of arsenic by effectively covering arsenic with molten gallium in the melting of the arsenic. CONSTITUTION:Raw material arsenic 2 having higher vapor pressure among gallium arsenide raw materials is solidified in the form of a circular disk having nearly the same shape as the cross section of a crucible 1 and the disk is placed at the bottom of the crucible. Gallium raw material 3 is placed on the arsenic raw material 2 and, further, B2O3 4 is placed on the gallium raw material 3. The charged materials in the crucible 1 are heated and melted while holding the raw material arsenic on the crucible bottom with an arsenic supporting member 5 and the molten raw material is covered with the sealant 4. The arsenic supporting member 5 is made of PBN and has a cylindrical form having an inner diameter larger than the diameter of the pull-up crystal and an outer diameter smaller than the inner diameter of the crucible. The arsenic supporting member 5 has a ring-shaped pressing part 5a at the lower part to press the raw material and an engaging part at the upper part to fix the arsenic supporting member 5 to the crucible 1. The upper part of the arsenic supporting member 5 is fixed to the crucible 1 and the raw material arsenic is pressed to the bottom of the crucible with the ring-shaped pressing part 5a to prevent the flotation of the arsenic in the melting of gallium raw material.

10. 发明专利

JPH01252597A PRODUCTION OF SINGLE CRYSTAL OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPH01252597A
公开(公告)日：1989-10-09
申请号：JP8195088
申请日：1988-04-01
申请人： HITACHI CABLE
发明人： TAWARASAKO SHUICHI
IPC分类号： H01L21/208 , C30B15/14 , C30B27/02
摘要： PURPOSE:To make possible to crystallize in a single crystal preventing formation of polycrystalline state of single crystal, keeping an ideal solid-liquid interface shape, by controlling heater power of upper heater for solid-liquid interface control so as to have a temperature gradient of fixed pattern in growing of a single crystal of compound semiconductor. CONSTITUTION:In a single crystal 3 of compound semiconductor is grown from a raw material melt 1 in a crucible 6, a temperature of main heater 4 heating the raw material melt 1 is observed with a thermocouple 7 and simultaneously a temperature of upper heater 5 for control of solid-liquid interface is observed with a thermocouple 8, then a power of the heater 5 is controlled so as to have a fixed temperature gradient pattern containing a pull-up length or weight of the single crystal as a parameter.

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