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71. 发明专利

JPH0595111A QUANTUM ELEMENT AND ITS MANUFACTURE 失效
公开(公告)号：JPH0595111A
公开(公告)日：1993-04-16
申请号：JP25517391
申请日：1991-10-02
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： OKADA KENJI , TERUI YASUAKI , YASUI JURO , HIRAI YOSHIHIKO , NIWA MASAAKI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L29/06 , H01L29/68
摘要： PURPOSE:To provide a manufacturing method of a quantum element consisting of two quantum dots connected to a quantum fine line though a quantum fine line and an insulating film. CONSTITUTION:This method is composed of a first process to form a mask of a specified configuration on a single crystal silicon 3 formed on an insulating film 4, a second process to form a silicon crystal 5 by epitaxial growth and a third process to form a quantum dot on an insulating film by processing the silicon crystal 5 and the single crystal silicon 3 to a specified shape. Thereby, a quantum element of the constitution can be formed readily.

72. 发明专利

JPH0595105A QUANTUM ELEMENT 失效
公开(公告)号：JPH0595105A
公开(公告)日：1993-04-16
申请号：JP25341591
申请日：1991-10-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIRAI YOSHIHIKO , TERUI YASUAKI , YASUI JURO , NIWA MASAAKI , MORIMOTO TADASHI , WADA ATSUO , OKADA KENJI
IPC分类号： H01L29/06 , H01L29/66
摘要： PURPOSE:To improve performance as a transistor by increasing the ratio of a maximum value and a minimum value of a current of a resonance tunneling element. CONSTITUTION:A zero-dimensional quantum well 10 is connected to an input step of a one-dimensional quantum fine line transistor 20 having a gate 22 for controlling electron transfer through a potential barrier 11 such as an extremely thin insulating film. Since quantum level inside the zero-dimensional quantum well 10 is a delta function state and has little dispersion, energy of electron which can pass through the zero-dimensional quantum well 10 is also limited. Therefore, electron whose dispersion of energy level is small is introduced to an input step of the onedimensional quantum fine line transistor 20. When the gate 22 is turned ON, quantum level of a fine line part immediately below a gate and quantum level of an input step of the one- dimensional fine line transistor 20 become irregular and electron can not pass through the gate 22 excepting a leak current.

73. 发明专利

JPH0595103A QUANTUM ELEMENT 失效
公开(公告)号：JPH0595103A
公开(公告)日：1993-04-16
申请号：JP25341391
申请日：1991-10-01
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIRAI YOSHIHIKO , TERUI YASUAKI , YASUI JURO , NIWA MASAAKI , OKADA KENJI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L29/06 , H01L29/66
摘要： PURPOSE:To acquire a quantum dot memory which increases an actual charge amount by making a plurality of quantum well memories of the same size connected to a quantum fine line in parallel through a potential barrier, a quantum dot and a potential barrier. CONSTITUTION:A plurality of quantum dots 1 are connected to a quantum fine line 4 through a potential barrier 2, a quantum dot 3 and a potential barrier 2. Information of the quantum dot 1 is read and written in parallel to the quantum fine line 4 by resonance tunneling effect of the quantum dot 3 by controlling potential of the quantum dot 3 and the quantum fine line 4. Thereby, a charge amount of a plurality of quantum dots can be acquired.

74. 发明专利

JPH0529631A FINE WIRE CHANNEL AND ITS FORMATION 失效
公开(公告)号：JPH0529631A
公开(公告)日：1993-02-05
申请号：JP18083391
申请日：1991-07-22
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： HIRAI YOSHIHIKO , YASUI JURO , NIWA MASAAKI , OKADA KENJI , WADA ATSUO , MORIMOTO TADASHI
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L29/06 , H01L29/80
摘要： PURPOSE:To make a projection tip induce a microchannel by impressing bias voltage on an electrode formed on the side wall of a saw-toothed projection rectangular in cross section whose side wall is an Si face formed by crystal anisotropic etching. CONSTITUTION:An N-type Si substrate 10 has saw-toothed projections 2 each being rectangular in cross section whose side walls 13 are Si faces formed by crystal anisotropic etching and is provided with electrodes 3 on side walls except the tips of the projections 2 with an insulating film 12 interposed. With regard to fine wire elements thus constituted, impressing a negative voltage on an electrode 3 make the tip of a projection induce a fine wire channel 1 whose majority carriers are electrons confined by electric fields. Carriers moving through ridge channels 1 are inhibited from being scattered by interface roughness since the side wall 13 of the channel has a very flat face. Further, using the tip of a saw-toothed projection as a channel enables formation of a very fine one-dimensional conduction channel which exceeds a working limit of lithography.

75. 发明专利

JPH0472505A SCANNING TYPE INTER-ATOMICK FORCE TUNNELING MICROSCOPE 失效
公开(公告)号：JPH0472505A
公开(公告)日：1992-03-06
申请号：JP18606290
申请日：1990-07-13
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NIWA MASAAKI
IPC分类号： G01B7/34 , G01B21/30 , G01N37/00 , G01Q30/04 , G01Q60/04 , G01Q60/10 , G01Q60/24 , G01Q90/00 , G01R29/12 , H01J37/28 , H01L21/66
摘要： PURPOSE:To sense projections/recesses at the surface of a specimen and electric charges thereon well distinguished, by furnishing a means to drive the specimen, a fixed cantilever, electroconductive probe at its foremost, a means to sense displacement of the lever tip, and a power supply means. CONSTITUTION:One end of a cantilever 12 is held on a base 11, and the cantilever 12 rear surface 12a and part 12b of the front surface are made of an electroconductive substance. At its undersurface No.1 conductive probe 13 is provided, while No.2 probe 21 is placed right over it and a piezo element 22 is mounted. First a switch 17 is opened and the probe 13 is approached to the surface of a specimen 15 in a distance of approx. 10Angstrom , and the deflection of the cantilever 12 is sensed from the tunnel current in the probe 21, and thus projection/recess information is obtained. The switch 17 is shut, and the electric charge information based upon the Coulomb force is applied to build an image. The difference between two images is taken, and only the electric charge information on the surface of the specimen is obtained. Thereby distinction between projection/recess and the electric charge distribution can be performed.

76. 发明专利

JPH02194555A MANUFACTURE OF SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPH02194555A
公开(公告)日：1990-08-01
申请号：JP1381989
申请日：1989-01-23
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NIWA MASAAKI
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8242 , H01L27/10 , H01L27/108
摘要： PURPOSE:To realize a cell of a large capacity for an occupied area per cell by a method wherein a MOS transistor is formed at the upper part of a capacitor by using an SIO technique. CONSTITUTION:Ions of boron 3 and ions of arsenic 4 are implanted in four directions from the upper part of a silicon substrate 1; an Hi-C structure is formed on an inner wall of a trench 2. Then, a thin thermal oxide film 5 is formed by a thermal oxidation operation; an interelectrode capacity of a capacitor is formed. The inside of the trench is filled with polysilicon by a flattening technique; a plate electrode 6 is formed. In order to connect an electrode of a MOS transistor to be formed to an electrode for charge storage use, ions of arsenic 7 for connection use are implanted into an etched shoulder part and are formed. In addition, an oxide film is formed on the whole surface of an isolation region 8 from the plate electrode 6 and the arsenic 7 for connection use by a thermal oxidation operation; the oxide film on the arsenic 7 for connection use is removed by a wet etching operation; the isolation region 8 is formed. A formed U-shaped part is filled with an insulating material 9; after that, it is flattened and used as a substratum of a MOS transistor formation region.

77. 发明专利

JPS62141787A PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JPS62141787A
公开(公告)日：1987-06-25
申请号：JP28332985
申请日：1985-12-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHIO MIKIO , YANO KOSAKU , AOKI YOSHITAKA , NIWA MASAAKI
IPC分类号： H01L27/146 , H01L27/14 , H01L31/0248 , H01L31/08
摘要： PURPOSE:To produce an element with excellent transit photoresponding characteristics and better blocking effect on charge injection than an element using conventional a-SiC:H (B) as a blocking layer by a method wherein a SiC:H containing no impurity with optical band width within specified range and film thickness not exceeding specified value is used as a blocking layer. CONSTITUTION:A first electrode 1, a hydrogenated amorphous silicon a-SiC:H layer 2 mainly composed of silicon and a second transparent electrode 4 are provided while a blocking layer 3 is laid between the a-SiC:H layer 2 and the second electrode 4. At this time, hydrogenated amorphous silicon carbon a-SiC:H with film thickness not exceeding 1000Angstrom and optical band width of 1.8eV-2.2eV is used as the blocking layer 3. For an example, a photoelectric conversion element is produced by using Mo as the first electrode; a film using SiH4 formed by plasma CVD process with optical band width of 1.7eV and film thickness of around 1mum as the a-SiC:H layer 2; an a-SiC:H film using Si4, CH4 formed by plasma CVD process with optical band width of 2.1eV and film thickness of 500Angstrom as the blocking layer 3 and an ITO transparent electrode as the second electrode 4.

78. 发明专利

JPS62141785A PHOTOELECTRIC CONVERTER 失效
公开(公告)号：JPS62141785A
公开(公告)日：1987-06-25
申请号：JP28331185
申请日：1985-12-16
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： AOKI YOSHITAKA , YANO KOSAKU , NIWA MASAAKI , NISHIO MIKIO
IPC分类号： H01L27/146 , H01L27/14 , H01L31/0248 , H01L31/08
摘要： PURPOSE:To manufacture a photoelectric converter with high sensitivity while restraining dark current from increasing within a simple structure by a method wherein first to third layers containing hydrogen mainly composed of respective amorphous Si1-xCx, amorphous Si1-yGey and amorphous Si1-zCz are laminated on a substrate with multiple sampling electrodes or regions arranged thereon. CONSTITUTION:A first layer 8 containing hydrogen mainly composed of an amorphous Si1-xCx(0

79. 发明专利

JPS6212122A CONTROLLING EQUIPMENT FOR THICK FILM 失效
公开(公告)号：JPS6212122A
公开(公告)日：1987-01-21
申请号：JP15072685
申请日：1985-07-09
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NIWA MASAAKI
IPC分类号： H01L21/66 , H01L21/203 , H01L21/205
摘要： PURPOSE:To make it possible to control with high precision the optical characteristics in the wavelength region near absorption band edge which is important to determine the optical features of film, by irradiating the light near the optical absorption band edge of the material to be deposited in the forming process of film, such as, the photoelectric conversion film which requires optical characteristics, and measuring the quantity of transmitted light during the deposition process. CONSTITUTION:The He-Ne laser (632.8nm wavelength) light source and the photo diode are used as the light emitting device 6 and the photo detector 7, respectively. The detected signal processing circuit 12 calculates the transmission coefficient T from the detected quantity of transmitted light, and calculates the film thickness (d) based on the absorption coefficient alpha obtained from the preliminary deposition material. When the calculated (d) reaches the desired film thickness previously input, the high frequency power source B, the driving power source for plasma discharge, is turned OFF. In this manner, the discharge automatically stops to half the deposition when the detected film thickness reaches the desired film thickness.

80. 发明专利

JPS629621A DEVICE AND METHOD FOR HEATING SUBSTRATE 失效
公开(公告)号：JPS629621A
公开(公告)日：1987-01-17
申请号：JP14891585
申请日：1985-07-05
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： NISHIO MIKIO , YANO KOSAKU , AOKI YOSHITAKA , NIWA MASAAKI , YONEDA TADANAKA
IPC分类号： H01L21/324 , H01L21/203 , H01L21/302 , H01L21/31
摘要： PURPOSE:To contrive improvement in thermal efficiency, temperature con trollability and the uniformity of temperature distribution when a substrate is heated by a method wherein the power source of a heating material is pro vided detachably, the heating material is movably installed, and a high thermal conductivity is obtained by integrally forming the heating material and a sub strate supporting member. CONSTITUTION:A substrate supporting part 12, a heater part 13, and a heater power source terminal 14 are integrally formed, and a substrate 11 is attached to a substrate supporting part 12. The substrate 11 is in a position to be conveyed in the lateral direction, and the substrate 11 is conveyed to the prescribed position of heating together with the substrate supporting part 12 and the heater part 13. A vertically movable power supply terminal 15 is brought down, it is connected to a heater power source terminal 14, power is applied to the heater located on the heater part 13, and the heater is heated up. When the substrate 11 is being conveyed, the power source terminal 15 is moved up so that the substrate 11 can be conveyed.

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