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71. 发明专利

JPH03271120A PRODUCTION OF HIGH-TEMPERATURE SUPERCONDUCTING THIN FILM OF YBCO-BASED OXIDE 失效
公开(公告)号：JPH03271120A
公开(公告)日：1991-12-03
申请号：JP6718890
申请日：1990-03-19
申请人： NIPPON STEEL CORP
发明人： ITO WATARU , SHIMADA HARUO , ITO TORU
IPC分类号： C01G3/00 , C01G1/00 , C23C14/08 , C23C14/58 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain a superconducting thin film having high surface smoothness and excellent physical properties in wide area in high reproducibility in producing the title thin film by separately laminating elements by dry process, by carrying out oxygen plasma treatment after lamination. CONSTITUTION:Three layers of Ba, Y and Cu are continuously laminated in this order from a substrate to the substrate in such a way that total film thickness of the three layers is 100-1,000Angstrom , further the three laminated films are successively and repeatedly laminated to make 1,0002mu total film thickness. Then the resulting film is subjected to oxygen plasma treatment in an atmosphere under 0.1-100 Torr oxygen partial pressure at 1-1,000 W plasma formation output in a container at 700-850 deg.C for 1-60 minutes. By this method, the objective thin film of Y-Ba-Cu-O-based oxide superconductor is obtained by after-treatment at low temperature and in a short time.

72. 发明专利

JPH03271119A PRODUCTION OF HIGH-TEMPERATURE SUPERCONDUCTING THIN FILM OF YBCO-BASED OXIDE 失效
公开(公告)号：JPH03271119A
公开(公告)日：1991-12-03
申请号：JP6718790
申请日：1990-03-19
申请人： NIPPON STEEL CORP
发明人： ITO WATARU , ITO TORU , SHIMADA HARUO
IPC分类号： C01G3/00 , C01G1/00 , C23C14/08 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To obtain a superconducting thin film having high surface smoothness and excellent physical properties in wide area in high reproducibility in producing the title thin film by separately laminating elements by reaction deposition by carrying out lamination while heating a substrate. CONSTITUTION:A substrate is heated to 550-650 deg.C in oxygen or a mixed atmosphere of oxygen and rare gas and one of Y, Ba and Cu is made into a film as a first layer adjoining the substrate on the substrate. Then, one of Y, Ba and Cu different from the first layer is formed as a second layer adjoining the first layer and one of Y, Ba and Cu different from the first and the second layers is processed into a film as a third layer adjoining the second layer. The three layers are continuously laminated in such a way that total film thickness of the three layers is 100-1,000Angstrom , further three laminated films are successively and repeatedly laminated to give 1,000Angstrom -2mu total film thickness. By this method, the objective thin film of Y-Ba-Cu-O-based oxide superconductor is obtained without heat treatment.

73. 发明专利

JPH0383804A PRODUCTION OF SUPERCONDUCTING OXIDE THIN FILM 失效
公开(公告)号：JPH0383804A
公开(公告)日：1991-04-09
申请号：JP21872089
申请日：1989-08-28
申请人： NIPPON STEEL CORP
发明人： SHIMADA HARUO , ITO WATARU , IMAFUKU MUNEYUKI , TAKAGI YASUO , ITO TORU
IPC分类号： C04B41/87 , C01B13/14 , C01G1/00 , C01G3/00 , C01G29/00 , C23C16/30 , C23C16/50 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To form an oxide superconductor film having excellent superconducting characteristics on a substrate by generating an ionized gas containing oxygen and a superconducting composition in a closed vessel adjusted to a specific vacuum degree and applying a specific DC voltage between a substrate and a counter electrode placed at specific positions in the closed vessel. CONSTITUTION:A superconducting thin film is formed on a substrate by using a closed vessel 8 containing an ionized gas containing oxygen and a superconducting composition (the raw material gases are introduced through the lines 1 and 2) and placing at least one pair of a substrate 6 and a counter electrode 7 in the gas in a state separated from discharge electrodes 4, 5. In the above process, the temperature of the substrate 6 is adjusted between 380 deg.C and the melting point of the superconducting composition substance depositing on the substrate 6, the pressure in the closed vessel 8 is adjusted to 0.1-100Torr and DC voltage consisting of a combination of -60V to -500V and +60V to +500V is applied to the counter electrode 7 and the superconducting composition depositing on the substrate 6.

74. 发明专利

JPH0360404A PRODUCTION OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH0360404A
公开(公告)日：1991-03-15
申请号：JP20388389
申请日：1989-08-08
申请人： NIPPON STEEL CORP
发明人： SHIMADA HARUO , ITO WATARU , IMAFUKU MUNEYUKI , TAKAGI YASUO , ITO TORU
IPC分类号： C04B41/80 , C01B13/14 , C01G1/00 , C01G3/00 , H01B12/00 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To reduce the treating time and to lower the treating temp. and oxygen pressure at the time of treating a superconducting composition arranged in an ionized gas contg. oxygen along with a counter electrode by specifying the conditions and utilzing plasma oxidation. CONSTITUTION:The superconducting composition 7 and the counter electrode 8 are arranged between the discharge electrodes 4 and 5 in a closed vessel 3, the vessel 3 is evacuated, and then a gas inlet 1 is opened to adjust the pressure in the vessel 3. A voltage is impressed on the electrodes 4 and 5 to generate an electric discharge, and the gas between the electrodes is ionized. In this method, the composition 7 is held at 380 deg.C to lower than the melting point and the oxygen in the vessel at 0.1-100Torr, and a DC voltage at 100-500V is impressed between the counter electrode 8 and the composition 7 with the composition 7 positively charged. When the oxygen pressure is controlled beyond the limits, the discharge is not stabilized, excellent superconductivity is not obtained at 500V. When the composition is held at

75. 发明专利

JPH02184521A PRODUCTION OF Y-BA-CU-O BASED OXIDE HIGH-TEMPERATURE SUPERCONDUCTING FILM 失效
公开(公告)号：JPH02184521A
公开(公告)日：1990-07-19
申请号：JP215389
申请日：1989-01-10
申请人： NIPPON STEEL CORP
发明人： ITO WATARU , ITO TORU , TEJIMA HIDEKAZU
IPC分类号： C01G3/00 , C01G1/00 , C04B41/81 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To make it possible to stably obtain the title film having excellent characteristics over wide area in good reproducibility by repeatedly laminating three laminate films on a substrate in order of Ba, Y2O3 and Cu so as to have a prescribed film thickness and then heating the laminate in O2 atmosphere. CONSTITUTION:Beams 2 are outputted under O2 atmosphere at about 1X10 Torr on a substrate 5 such as MgO(100) single crystal of vacuum deposition device in which electron beams 2, triple hearth 1, high frequency coil 7, film thickness monitor 6, etc., are arranged and three laminating films are continuously laminated at deposition rate of about 1A/s in the order of Ba, Y2O3 and Cu so that total film thickness of three layers is 100-1000A. Then the three lamination films are further continuously repeatedly laminated and laminated so that the ratio of atomic numbers of Y, Ba and Cu is 1:2:3 to give a thin film having 1000A-2mum total film thickness. Then the thin film is heattreated under O2 atmosphere at 700-1000 deg.C for 1min-8hr to provide Y- Ba-Cu-O based oxide high temperature superconducting thin film.

76. 发明专利

JPS6436764A MANUFACTURE OF THIN MULTICOMPONENT SYSTEM FILM BY SPUTTERING 失效
公开(公告)号：JPS6436764A
公开(公告)日：1989-02-07
申请号：JP19013787
申请日：1987-07-31
申请人： NIPPON STEEL CORP
发明人： HASHIMOTO MISAO , TAKEBAYASHI SHIGETO , ITO WATARU , MIYAJIMA SHUNPEI , TAKAGI YASUO
IPC分类号： C23C14/34 , C30B29/22
摘要： PURPOSE:To manufacture a thin multicomponent system film free from dislocation of composition ratio, by using a composite target in which thin film-forming materials are vapor-deposited on a plate in an area ratio so that the required composition ratio is reached. CONSTITUTION:Cu, etc., are used for a plate to be a target. Y1, Ba2, Cu3 etc., as thin film-forming elements, are vapor-deposited onto this Cu substrate 10 by a PVD method into sectorial or other patterns, by which a composite target is prepared. At this time, vapor deposition is carried out in an area ratio in which respective metals as component materials are formed into a composition ratio capable of showing the desired superconducting phenomenon when formed into a thin film. By using this composite target, the thin multicomponent system superconducting film of Y-Ba-Cu-O or other types can be manufactured by means of sputtering.

77. 发明专利

JPS6372867A VAPOR COATING METHOD WITH SATISFACTORY ADHESION 失效
公开(公告)号：JPS6372867A
公开(公告)日：1988-04-02
申请号：JP21704486
申请日：1986-09-17
申请人： NIPPON STEEL CORP
发明人： ITO WATARU , ITO TORU , HASHIMOTO MISAO , MIYAJIMA SHUNPEI , ITO ISAO
IPC分类号： C23C14/06
摘要： PURPOSE:To improve the adhesion of a formed film to a substrate and to provide superior weather and wear resistances and decorativeness to the surface of the substrate by coating the surface of the substrate with ceramics by ion plating and by further coating it with the same substance by sputtering. CONSTITUTION:A coil (substrate) 4 is introduced into an ion plating chamber 3, preheated and coated with ceramics such as TiN by reactive ion plating. It is sent to a sputtering chamber 6 through a slit 5 and coated with the same substance such as TiN by sputtering. The total thickness of the resulting ceramic coatings is preferably regulated to

78. 发明专利

JPS6357760A HOLLOW CATHODE GUN TYPE ION PLATING DEVICE 失效
公开(公告)号：JPS6357760A
公开(公告)日：1988-03-12
申请号：JP19997686
申请日：1986-08-28
申请人： NIPPON STEEL CORP
发明人： ITO WATARU , ITO TORU , NAKAHARA TOSHIKI
IPC分类号： C23C14/32
摘要： PURPOSE:To improve the film quality of a coating material and to increase a film forming speed so as to improve productivity by constituting a hollow cathode gun in such a manner that the position thereof can be moved relative to a substrate and subjecting the substrate to continuous ion plating. CONSTITUTION:The substrate 2 is continuously passed through a slit 3 into an operation chamber 1 and is heated to a prescribed temp. by a sheathed heater 4. A reactive gas 11 is further introduced into the chamber from an introducing pipe 6 and evaporating metal 10 supplied by a feeder 7 is melted and ionized by the hollow cathode gun 5. The ions and the above-mentioned reactive gas 11 are brought into reaction in a vapor phase by which the substrate 2 is subjected to the activated reactive ion plating. The hollow cathode gun 5 in the above-mentioned method is so constructed that the position thereof relative to the substrate 2 can be moved by a driving device 9 and an O-ring 8. The uniform film formation is thus permitted with the highest efficiency.

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