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71. 发明专利

JPH05239641A 失效
公开(公告)号：JPH05239641A
公开(公告)日：1993-09-17
申请号：JP3918392
申请日：1992-02-26
申请人： HITACHI LTD
发明人： KIYONO TOMOYUKI , ONO YASUNORI , SAKUMICHI KUNIYUKI , SETOYAMA HIDETSUGU , KAMEI MITSUHIRO , UMEHARA TANOSHI , SUZUKI TETSUAKI
IPC分类号： C23C14/35 , C23C14/08
摘要： PURPOSE:To form a transparent conductive film, such as an ITO film with little residual amount after etching by not only unnecessitating the addition of H2 to sputtering gas even in forming a transparent film, such as an ITO film on an insulating body substrate but also relaxing the impulse of electrons and negative ions on the ITO film to prevent the crystallization of the film without making the insulating body substrate be at floating potential. CONSTITUTION:Sputter particles are made to sputter a target or particularly from a target 5 which a mixture of iridium oxide and tin oxide is sintered to form by a magnetron sputtering method. While the sputter particles sputtered from the target 5 are formed into a transparent conductive film, particularly a ITO film on an insulating body substrate 11, negative voltage, concretely that of 10-300V absolute value of voltage, is applied to the transparent film (ITO film) on the insulating body substrate 11.

72. 发明专利

JPH05214528A SPUTTERING APPARATUS 失效
公开(公告)号：JPH05214528A
公开(公告)日：1993-08-24
申请号：JP1922092
申请日：1992-02-04
申请人： HITACHI LTD
发明人： KAMEI MITSUHIRO , SETOYAMA HIDETSUGU , UMEHARA SATOSHI , KIYONO TOMOYUKI , ONO YASUNORI
IPC分类号： C23C14/46 , C23C14/08 , C23C14/34
摘要： PURPOSE:To provide a sputtering apparatus capable of removing blackened products on the surface of a target for a transparent conductive film in a short time without affecting a substrate and capable of forming an ITO film of stable film quality at a high apparatus working rate. CONSTITUTION:This is a sputtering apparatus in which, in a sputtering apparatus having a vacuum vessel 1, a substrate holder 10 arranged in the vacuum vessel 1 and holding a substrate and a target holder 3a holding a target 13a, an ion source 102 irradiating the surface of the target 13a with ion beams for treating the surface of the target 13a is furthermore provided in the vacuum vessel 1.

73. 发明专利

JPH04304630A MICROWAVE PLASMA GENERATOR 失效
公开(公告)号：JPH04304630A
公开(公告)日：1992-10-28
申请号：JP6968991
申请日：1991-04-02
申请人： HITACHI LTD
发明人： IGA TAKASHI , ONO YASUNORI , NATSUI KENICHI
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide a microwave plasma generator which uniformly generates high density plasma within a rectangular microwave discharge chamber and is suitable for simultaneous processing for a plurality of substrates and for processing of a large size substrate. CONSTITUTION:A metal cylindrical body 24 with a flat slit is provided along the internal wall of an almost rectangular microwave discharge chamber 1 having the cross-section perpendicular to the center axis with the ratio of the long and short sides of 1 or more to supply the microwave of 2.45GHz. At the inside of the metal cylindrical body 24 with slit, multipolar line cusp magnetic field 35 is formed by a permanent magnet 34 and its cusped line 36 is arranged among a longer slit 19 of the metal cylindrical body 24 with slit and generates a magnetic field of 875GHz or higher in the vicinity of the longer slit 19. This multipolar line cusped magnetic field 35 generates plasma and simultaneously confines the plasma effectively. The ion beam 10 is led from an ion extraction electrode 3 which does not generates magnetic field in the neighbourhood to irradiate a sample 12.

74. 发明专利

JPH04192325A MICROWAVE PLASMA PROCESSING EQUIPMENT AND CLEANING METHOD OF MICROWAVE INTRODUCING WINDOW 失效
公开(公告)号：JPH04192325A
公开(公告)日：1992-07-10
申请号：JP32037890
申请日：1990-11-24
申请人： HITACHI LTD
发明人： IGA TAKASHI , ONO YASUNORI , HAKAMATA YOSHIMI , MATSUO HISAHIDE
IPC分类号： H01L21/285 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To obtain a microwave plasma processing equipment capable of eliminating a conductive thin film adhering to a microwave introducing window, without interrupting plasma processing, by installing an electrode which does not obstruct the introduction of microwaves, on the atmospheric air side of a microwave introducing window, and connecting a high frequency power supply with said electrode. CONSTITUTION:When conductive particles 12 sputtered from a substrate adhere to the vacuum side of a microwave introducing window 5, and begin to form a conductive thin film 13, high frequency electric power is supplied to a microwave transmitting electrode 18, from a high frequency power supply 19. Since high density plasma 17 exists in the vicinity of the window 5, ions and electrons in the plasma 17 alternately enter the microwave introducing window 5 or the conductive thin film 13, every half periods of the high frequency. Since ions and electrons are different in mass, an ion sheath wherein ions are accelerated is formed in front of the window 5 or the thin film 13. As the result, ions 27 in the plasma are accelerated to have large energy, and collide against the conductive thin film 13, which are turned into sputter particles 28 and scattered and eliminated.

75. 发明专利

JPH03253586A DETECTION OF END POINT AND DEVICE THEREFOR 失效
公开(公告)号：JPH03253586A
公开(公告)日：1991-11-12
申请号：JP4856590
申请日：1990-02-28
申请人： HITACHI LTD
发明人： ONO YASUNORI , IGA TAKASHI , KUROSAWA TOMOE , NATSUI KENICHI
IPC分类号： C23F4/00 , G01N27/62 , H01J49/42 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To detect the completion of etching by separating ionized particles to the particles of a prescribed energy range and the other particles, fixing the kinds of the particles of the prescribed energy range and investigating the change in the number of one kind of the particles among the identified particles with time. CONSTITUTION:The sampling particles contg. the particles 31 released from a work 5 are ionized by an ionizing device 11. The ionized particles are analyzed by an energy analyzing device 12 and are separated to the particles of the prescribed energy range and the other particles. The kinds of the separated particles of the prescribed energy range are mass spectrometric analyzed by a mass spectrometric analyzing device 13 and are thereby identified. The change in the number of at least one kind of the particles among the identified particles with time is investigated and the completion of the etching is detected. The identification of the secondary ions to be released at the time of etching the sample which is the work consisting of an arbitrary material is facilitated in this way.

76. 发明专利

JPH03155038A CHARGED PARTICLE ANALYZER 失效
公开(公告)号：JPH03155038A
公开(公告)日：1991-07-03
申请号：JP29313789
申请日：1989-11-10
申请人： HITACHI LTD
发明人： ONO YASUNORI , IGA TAKASHI , KUROSAWA TOMOE , NATSUI KENICHI , SEKIMOTO SHINYA
IPC分类号： H01J27/16 , H01J49/26 , H01J49/44
摘要： PURPOSE:To obtain a charged particle analyzer which can measure space distribution of characteristic amounts of ions and make the characteristic amounts spatially uniform by collecting data at optional several positions at the time of transferring an energy analyzer and a mass spectrometer and altering parameters of a plasma apparatus. CONSTITUTION:An energy analyzer 3 and a mass spectrometer 4 are made movable in the vertical plane in relation to the direction of radiating plasma from a plasma apparatus 20. Ions are collected; but they are collected when the initial position of the energy analyzer 3 is set to be x=x0 and energy analysis and mass analysis are carried out. Further these processes are carried out successively at each position of x=x1, x2,...xn, and spatial distribution of characteristic amounts is computed based on the data of the energy analysis and mass analysis obtained at each position and parameters of the plasma apparatus 20 are changed so as to make the spatial distribution of the characteristic amounts uniform. In this way, a charged particle analyzer which can give ions having uniform spatial characteristic amounts can be obtained.

77. 发明专利

JPS6487789A ION BEAM PROCESSING DEVICE 失效
公开(公告)号：JPS6487789A
公开(公告)日：1989-03-31
申请号：JP24378587
申请日：1987-09-30
申请人： HITACHI LTD
发明人： HAKAMATA YOSHIMI , SATO TADASHI , NATSUI KENICHI , ONO YASUNORI , MORIJIRI MAKOTO , SAITO MASAKATSU , AOKI SHIGEO , OISHI SEITARO
IPC分类号： C23F4/00
摘要： PURPOSE:To improve the accuracy of pattern transfer by alternately arranging the N and S poles of many permanent magnets so that the poles confront the wall of the plasma generation chamber of an ion source and by preventing the growth of a redeposited layer with the magnets. CONSTITUTION:This ion beam processing device is composed essentially of a vacuum vessel 2, a substrate holder 5, a plasma generation chamber 1 and plural ion sources 20, 30. The ion source 20 is provided with a group of electrodes 21 for extracting ions 23 from generated plasma at a position between the chamber 1 and the holder 5. The N and S poles of many permanent magnets 22 are alternately arranged so that the poles confront the wall of the chamber 1.

78. 发明专利

JPS6455380A SPUTTERING DEVICE 失效
公开(公告)号：JPS6455380A
公开(公告)日：1989-03-02
申请号：JP21006487
申请日：1987-08-26
申请人： HITACHI LTD
发明人： ONO YASUNORI , SATO TADASHI , NATSUI KENICHI , HAKAMATA YOSHIMI , MORIJIRI MAKOTO , SAITO MASAKATSU , AOKI SHIGEO , OISHI SEITARO
IPC分类号： C23C14/36 , C23C14/35
摘要： PURPOSE:To enable film formation for many base plates while using small targets by constituting a pair of targets into a lamellate shape having an aperture in the central parts and arranging the substrate in the vicinities of outer peripheries and inner peripheries of the targets to the side part of a discharge space. CONSTITUTION:The substrate 4 are arranged around the discoid targets 1 having a nearly circular aperture part in the central part and to the aperture parts of targets 1. The inside of a vacuum vessel 15 is exhausted and gaseous Ar, etc., are introduced thereinto and high-frequency electric power is impressed to the upper and lower targets 1 from an electric source 12 and electric discharge is started between the targets 1. The electrons discharged from the targets 1 being a discharge electrode form high-density plasma while performing such spiral movement that these wind around lines of magnetic force. Ions in plasma are accelerated by the electric field of an ion sheath formed in the vicinities of the targets 1 and allowed to collide against the targets 1. The scattered sputtering particles are deposited on the respective substrates 4 by opening shutters 7 and shields 13.

79. 发明专利

JPS6454656A BOARD HOLDER FOR FILM PROCESSING 失效
公开(公告)号：JPS6454656A
公开(公告)日：1989-03-02
申请号：JP21009287
申请日：1987-08-26
申请人： HITACHI LTD
发明人： SATO TADASHI , NATSUI KENICHI , ONO YASUNORI , HAKAMATA YOSHIMI , MORIJIRI MAKOTO , SAITO MASAKATSU , AOKI SHIGEO , OISHI SEITARO
IPC分类号： H01L21/30 , H01J37/305 , H01L21/027
摘要： PURPOSE:To perform cooling at uniform and small heat resistance and prevent flow-out of cooling medium for liquid so as to enable reuse by using a liquid metal soaked in solid matrix capable of maintaining the self shape. CONSTITUTION:For example, a stainless steel is used as a solid metal matrix and for example, a cooling medium including gallium is used as a cooling medium 7. Hereupon, as a medium, a metal or alloy whose melting point is 350 deg.C or less is used. That is, in place of the above-mentioned gallium, metals such as indium, mercury, tin, lead, etc., or alloy including these metals can also be used according to the use temperature of a board 1. By using a liquid metal for the cooling medium in this way, cooling ability is improved and reuse is enabled by soaking it in solid matrix.

80. 发明专利

JPS6450424A PLASMA PROCESSING APPARATUS 失效
公开(公告)号：JPS6450424A
公开(公告)日：1989-02-27
申请号：JP20634587
申请日：1987-08-21
申请人： HITACHI LTD
发明人： HAKAMATA YOSHIMI , NATSUI KENICHI , ONO YASUNORI , SATO TADASHI , KOJIMA KEIMEI , KUROSAWA TOMOE
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To improve plasma formation efficiency, by inputting an electron lead-out electrode, which is provided between a secondary plasma formation chamber and a main plasma formation chamber, into the main plasma yielding chamber. CONSTITUTION:An electron lead-out electrode 10, which is electrically connected to a secondary plasma formation chamber 6, is inputted into a main plasma formation chamber 5. Then, the component of the electric field in the direction of the diameter in the vicinity of the electron lead-out electrode 10 becomes large. Plasma is formed in the secondary plasma formation chamber 6 and diffused into the electron lead-out electrode 10. The electrons, which are led out of the plasma, is accelerated in the direction of the diameter of the main plasma formation chamber 5. Therefore, the electrons, which enter in the vicinity of the sidewall of the main plasma formation chamber 5, i.e., a region affected by a line cusp magnetic field, are increased. Thus, the plasma is formed in the main plasma formation chamber 5 efficiently.

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