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    • 71. 发明专利
    • PLASMA TREATMENT
    • JPS62274080A
    • 1987-11-28
    • JP11456286
    • 1986-05-21
    • HITACHI LTD
    • KOKADO YUICHIKITO MAKOTOHONDA YOSHINORI
    • C23C14/02B29C59/14C23C16/50C23F4/00
    • PURPOSE:To efficiently carry out the title plasma treatment at high speed by increasing the plasma working area of a counter electrode for a rotating electrode which is in contact with a film at the time of continuously plasma- treating the surface of the long-sized film. CONSTITUTION:The inside of a vacuum vessel 1 is evacuated to a vacuum, gaseous Ar is introduced from an inlet 12, and the long-sized film 6 to be plasma-treated is wound on a rotating electrode 8 and transferred to a winding roll 9 from a delivery roll 7. A plasma treating chamber 3 having the counter electrode 11 is provided at a part of the rotating electrode 8, a high-frequency voltage of 100kHz-100MHz is impressed between the grounded rotating electrode 8 and the counter electrode 11 by a high-frequency voltage impressing device 4 to generate Ar plasma, and the surface of the film 6 is plasma-treated. In this case, the ratio S2/S1 of the area S1 of the part of the rotating electrode 8 which is in contact with the plasma to the area S2 of the part of the counter electrode 11 which is in contact with the plasma is made higher than unity to increase the plasma treatment efficiency, and the film 6 can be plasma-treated at high speed.
    • 74. 发明专利
    • MAGNETIC DISK
    • JPS6288131A
    • 1987-04-22
    • JP22700185
    • 1985-10-14
    • HITACHI LTD
    • HONDA YOSHINORIKITO MAKOTOKOKADO YUICHI
    • G11B5/66G11B5/64G11B5/72G11B5/73G11B5/82
    • PURPOSE:To increase remarkably a life of a disk by providing an intermediate supporting layer consisting of an amorphous silicon and a silicon compound, between a magnetic layer and a carbon film. CONSTITUTION:A pressure in each chamber 1c, 1d is dropped to a prescribed pressure by holding substrates 3a, 3b by substrate electrodes 2a, 2b, respectively, and opening exhaust valves 10a, 10b, and also an Ar gas is led into each chamber 1c, 1d from Ar gas use leading-in pipes 8a, 8b by opening Ar gas flow rate adjusting valves 9a, 9b, and thereafter, the inside of each chamber 1c, 1d is set to a prescribed sputter pressure by adjusting the closing quantity of the exhaust valves 10a, 10b. Subsequently, when a DC voltage 11a is impressed between a target voltage 7a and the substrate electrode 2a, and an RF voltage 11b is impressed between the electrode 7a and the substrate electrode 2b, a glow discharge is generated between each electrode 7a, 2a, 7b and 2b, an intermediate layer target 4 and a carbon target 5 are brought to sputtering, and a thin film of a prescribed film thickness is formed on the substrates 3a, 3b. In this way, the wear resistance becomes extremely good.
    • 76. 发明专利
    • Production of magnetic disk
    • 磁盘生产
    • JPS6199933A
    • 1986-05-19
    • JP21839484
    • 1984-10-19
    • Hitachi Ltd
    • HONDA YOSHINORIKOKADO YUICHIKITO MAKOTO
    • G11B5/72G11B5/64G11B5/73G11B5/82G11B5/85G11B5/851
    • PURPOSE: To improve the adhesive strength between a magnetic layer and protective film layer and to obtain a magnetic disk having high sliding resistance by depositing directly a blank material for the protective film on a magnetite layer and subjecting simultaneously these layers to a heat treatment.
      CONSTITUTION: The adhesive strength between the magnetic layer and the protective film layer is small and the sliding resistance is poor if the protective film is formed on the magnetic layer and therefore the protective film layer is formed prior to the formation of the magnetic layer and the magnetite layer and the protective film layer are simultaneously subjected to the heat treatment, by which the high adhesive strength is provided to the protective film layer and such protective film layer is formed by baking onto the magnetic layer. More specifically, an aluminum alloy substrate 1 is treated by an anodization method to form an alumite layer 2 and after polishing and washing, the magnetite layer 3 is formed by sputtering. A secure reaction layer is formed at the boundary between the magnetic layer and the protective film layer by the chemical reaction of the magnetite layer with the protective film layer when the magnetite layer is changed by the heat treatment to the magnetic layer. The adhesive strength and sliding resistance are thus remarkably improved.
      COPYRIGHT: (C)1986,JPO&Japio
    • 目的:为了提高磁性层和保护膜层之间的粘合强度,并通过在磁铁矿层上直接沉积保护膜的坯料并且同时对这些层进行热处理,获得具有高滑动阻力的磁盘。 构成:如果在磁性层上形成保护膜,则磁性层与保护膜层之间的粘合强度小,滑动阻力差,因此在形成磁性层之前形成保护膜层, 磁铁矿层和保护膜层同时进行热处理,通过该处理将高粘合强度提供到保护膜层,并且通过烘烤形成保护膜层到磁性层上。 更具体地说,通过阳极氧化法对铝合金基板1进行处理以形成耐酸铝层2,在研磨和洗涤之后,通过溅射形成磁铁矿层3。 当磁铁层通过热处理改变为磁性层时,通过磁铁矿层与保护膜层的化学反应,在磁性层和保护膜层之间的边界处形成安全的反应层。 因此,粘合强度和滑动阻力显着提高。