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71. 发明专利

JPS6227166B2 失效
公开(公告)号：JPS6227166B2
公开(公告)日：1987-06-12
申请号：JP5084984
申请日：1984-03-19
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , MURAKAMI MUTSUAKI
发明人： MURAKAMI MUTSUAKI
IPC分类号： D01F9/12 , D01F9/127

72. 发明专利

JPS6160121B2 失效
公开(公告)号：JPS6160121B2
公开(公告)日：1986-12-19
申请号：JP551484
申请日：1984-01-18
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , ODA MASAAKI , FUCHIDA HIDETSUGU
发明人： ODA MASAAKI , FUCHIDA HIDETSUGU
IPC分类号： B22F9/12

73. 发明专利

JPS6147904B2 失效
公开(公告)号：JPS6147904B2
公开(公告)日：1986-10-21
申请号：JP4916684
申请日：1984-03-16
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , YOSHIMURA SUSUMU , MURAKAMI MUTSUAKI
发明人： YOSHIMURA SUSUMU , MURAKAMI MUTSUAKI
IPC分类号： C01B31/02 , C01B31/04 , C23C16/26

74. 发明专利

JPS6134347B2 失效
公开(公告)号：JPS6134347B2
公开(公告)日：1986-08-07
申请号：JP409780
申请日：1980-01-19
申请人： SHINGIJUTSU KAIHATSU JIGYODAN
发明人： SHIOTANI NOBUYUKI , ITO MASATSUGU , SUGAYA YOSHIO
IPC分类号： A61M1/02

75. 发明专利

JPS613999B2 JPS613999B2 - 失效
公开(公告)号：JPS613999B2
公开(公告)日：1986-02-06
申请号：JP16052880
申请日：1980-11-13
申请人： Sekisui Kagaku Kogyo Kk , Shingijutsu Kaihatsu Jigyodan
发明人： NISHIZAKI MICHOSHI , MYAMOTO MINORU , MYAMOTO KAZUAKI , YOSHIDA TAKESHI , YAMAJI KATSUHIKO , NAKADA YASUSHI
IPC分类号： F17C11/00 , C01B3/00 , F25B17/12
CPC分类号： F25B17/12 , Y02A30/277 , Y02B30/62 , Y02E60/324
摘要： PURPOSE:To provide resistance to mechanical stress due to hydrogen absorption and release, and facilitate easy hydrogen passage, by installing in the container a bar, extending from the inner end of the container to the opening, and made of an elastic and porous material which is permeable only to hydrogen but not to the metallic hydride. CONSTITUTION:The container 1 has an opening 2 to introduce or extract hydrogen. A bar of an elastic and porous material 3 which allows hydrogen to pass through but not the metallic hydrides is connected at one end to the opening, extended to the axial direction of the container and fixed at other end to the inner wall of the container as necessary. The metallic hydride 4 is filled into the space between the porous material 3 and the inner wall 1 of the container. As the metallic hydride expands due to absorption of hydrogen, the porous body 3 contracts accordingly, thus, absorbing the mechanical stress due to expansion of the metallic hydride.

76. 发明专利

JPS60260472A ALPHA-SIALON SINTERED BODY AND MANUFACTURE 失效
公开(公告)号：JPS60260472A
公开(公告)日：1985-12-23
申请号：JP11308984
申请日：1984-06-04
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , KAGAKU GIJUTSUCHO MUKIZAI , SHINAGAWA REFRACTORIES CO
发明人： MITOMO MAMORU , ISHIZAWA KENKI , AYUSAWA NOBUO , SHIRONITA AKIRA , TAKAI MASAMICHI , UCHIDA NORIMASA
IPC分类号： C04B35/599 , C04B35/58

77. 发明专利

JPS60251194A PROCESS FOR GROWING SINGLE CRYSTAL OF COMPOUND HAVING HIGH DISSOCIATION PRESSURE 失效
公开(公告)号：JPS60251194A
公开(公告)日：1985-12-11
申请号：JP10443984
申请日：1984-05-25
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , TOMIZAWA KENJI , SHIMANUKI YASUSHI
发明人： SASAKI KOUICHI , TOMIZAWA KENJI , SHIMANUKI YASUSHI
IPC分类号： C30B15/26 , C30B29/42 , H01L21/02 , H01L21/208
摘要： PURPOSE:To enable precise control of thermal environment and to improve the quality of a single crystal of a compd. having high dissociation pressure by sensing the temp. of the surface of the melt optically through an optical window comprising a light transmittive material, and controlling a heating source basing on the sensed result. CONSTITUTION:GaAs is synthesized directly in a vessel contg. gaseous As sealed therein from Ga and As charged in a crucible 11. Then, a GaAs single crystal is pulled up. During this procedure, a tip of a quartz rod 1 for an optical window is held always at ca. 850 deg.C, and an clouding is caused on the rod. The indication of a two wavelength radiation pyrometer 2 shows maximally ca.+ or -5 deg.C variation influenced by the fluctuation of the temp. of the melt surface, but the mean value of the temp. after the pulling is commenced and the single crystal entering the straight barrel part, is held at + or -1 deg.C. As the result, a uniform crystal is obtd. The compd. having high dissociation pressure to be prepd. by this method is, for example, InAs, etc. in addition to the above descirbed GaAs.

78. 发明专利

JPS60221564A THIN FILM MANUFACTURING DEVICE 失效
公开(公告)号：JPS60221564A
公开(公告)日：1985-11-06
申请号：JP7668184
申请日：1984-04-18
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , MIZOGUCHI TADASHI
发明人： MIZOGUCHI TADASHI
IPC分类号： C23C14/22 , C23C14/24 , C23C14/50 , C23C14/54 , C23C14/56
摘要： PURPOSE:To provide a titled device which manufactures efficiently and economically many thin films having reliability by providing a top cap having an eccentric hole to a vacuum vessel and a substrate holder which is made rotatable and vertically movable to the position deviated from the center to the top cap provided in said hole. CONSTITUTION:The discoid 1st top cap 8 having the hole 9 made into an eccentric circular shape is provided to the vacuum vessel 1 provided with single or plural sources 2 for generating a thin film material such as gun type sputter source, evaporating boat or the like. The substrate holder 3 which is made rotatable and vertically movable to the position deviated from the center of the 2nd top cap 10 provided in said hole 9 and to which many substrates 4 can be set simultaneously as well as a mask holder 7 for moving vertically a mask 6 are attached to said 2nd cap. A rotatable shutter 5 is further mounted thereto. The positions, directions, timings, speeds, etc. of said caps 8, 10, holder 3, holder 7, shutter 5, etc. are controlled according to the prescribed program by a microcomputer device 11 by which thin homogeneous laminated films having various thicknesses are manufactured on the substrates 4.

79. 发明专利

JPS60204393A RECORDING MEDIUM 失效
公开(公告)号：JPS60204393A
公开(公告)日：1985-10-15
申请号：JP6115784
申请日：1984-03-30
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , WATAI HISAO , TANAKA NAOHIRO , MASUDA SHUJI , SUZUKI KENJI , MASUMOTO TAKESHI
发明人： WATAI HISAO , TANAKA NAOHIRO , MASUDA SHIYUUJI , SUZUKI KENJI , MASUMOTO TAKESHI
IPC分类号： B41M5/26 , G11B7/24 , G11B7/243
摘要： PURPOSE:To provide a recording medium capable of stably holding records with favorable resolution and being easily provided with pits and suitable for a photo- electric memory element or the like, comprising an oxide a main constituent of which is an amorphous phase or metastable phase of a lead oxide having a specified composition. CONSTITUTION:The objective medium comprises an oxide a main constituent of which is an amorphous phase or metastable phase of a lead oxide having the composition of the formula: PbLxMyOz, wherein each of L and M is an element other than Pb and O, preferably, L is an iron family element (Fe, Co or Ni) and M is Nb or Ta, 0

80. 发明专利

JPS60187845A METHOD AND APPARATUS FOR MEASURING CONCENTRATION OF ETHANE GAS 失效
公开(公告)号：JPS60187845A
公开(公告)日：1985-09-25
申请号：JP4299284
申请日：1984-03-08
申请人： SHOWA DENKO KK , INABA FUMIO , SHINGIJUTSU KAIHATSU JIGYODAN
发明人： SHINOHARA AKIO , ARAKAWA YOSHIAKI , INABA FUMIO
IPC分类号： G01N21/3504 , G01N21/359
摘要： PURPOSE:To accurately measure the concn. of ethane gas at a remote point, by selecting a wavelength region which is the wavelength band in the characteristic absorption band of ethane gas and reduced in loss by an optical fiber during transmission and receives no influence of H2O and CO2. CONSTITUTION:Light from a light source 1 is incident to beam splitters 7, 11 through a measuring cell 4 and a light transmitting line 5 to be divided into first, second and third luminous fluxes 8, 12, 13. The luminous fluxes 8, 12, 13 are applied to first, second and third band pass filters 9, 14, 15 to transmit narrow band lights respectively having center wavelengths of 1.6475mum, 1.675mum and 1.610mum while the transmitted lights are inputted to a signal processing apparatus 22 through light detectors 16, 17, 18. The absorption ratio is calculated from the ratio of the detectors 16, 18 and, from the relation of this ratio and a preliminarily calculated reference absorption ratio, the concn. measured value of ethane gas is calculated. Similarly, the concn. of ethane gas is further calculated from the detectors 17, 18 and these two measured values are compared to calculate the concn. of ethane gas.

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