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61. 发明专利

JP2011139404A Power supply control circuit 有权
标题翻译：电源控制电路
公开(公告)号：JP2011139404A
公开(公告)日：2011-07-14
申请号：JP2010000133
申请日：2010-01-04
申请人： Renesas Electronics Corp , ルネサスエレクトロニクス株式会社
发明人： SOMA OSAMU , NAKAHARA AKIHIRO
IPC分类号： H03K17/16 , H02M1/08 , H03K17/687
CPC分类号： H03K17/04123 , H01L21/823412 , H01L21/823487 , H01L27/088 , H01L29/1045 , H01L29/1095 , H01L29/7802 , H01L29/7835 , H03K17/163
摘要： PROBLEM TO BE SOLVED: To solve such a problem that a power supply control circuit of a conventional technology generates noise in an output voltage.
SOLUTION: A power supply control circuit includes an output transistor 32 which controls supply of electric power to a load, a gate drive circuit 31 which generates control signals (a) and (b) for on/off control with respect to the output transistor 32 based upon an external input signal, a transistor 37 which discharges gate charges of the output transistor 32 based upon the control signals (a) and (b) to turn off the output transistor 32, a transistor 39 for a discharge slower than that of the transistor 37, and a diode 40a which is connected to the transistor 37 in series, and blocks the discharge of gate charges from the output transistor 32 when the gate voltage of the output transistor 32 drops to a voltage level higher than the sum of a supply voltage Vcc and a threshold voltage of the output transistor 32 to turn off the output transistor 32.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题为了解决现有技术的电源控制电路在输出电压中产生噪声的问题。解决方案：电源控制电路包括控制向负载供电的输出晶体管32;栅极驱动电路31，其产生用于相对于负载的开/关控制的控制信号（a）和（b）基于外部输入信号的输出晶体管32，基于控制信号（a）和（b）对输出晶体管32的栅极电荷进行放电以截止输出晶体管32的晶体管37，放电的晶体管39比晶体管37的栅极电压和串联连接到晶体管37的二极管40a，并且当输出晶体管32的栅极电压下降到高于总和的电压电平时，阻止来自输出晶体管32的栅极电荷的放电的电源电压Vcc和输出晶体管32的阈值电压以截止输出晶体管32.版权所有：（C）2011，JPO＆INPIT

62. 发明专利

JP4456569B2 A drive circuit of a power switching device 有权
公开(公告)号：JP4456569B2
公开(公告)日：2010-04-28
申请号：JP2006043597
申请日：2006-02-21
申请人：株式会社デンソー , 株式会社日本自動車部品総合研究所
发明人：公計中村 , 剛山下 , 裕二林 , 剛細田
IPC分类号： H02M1/08
CPC分类号： H02M1/38 , H03K17/04123 , H03K17/162 , H03K17/6871 , H03K17/691 , H03K2017/066

63. 发明专利

JP2010045780A Switch 有权
标题翻译：开关
公开(公告)号：JP2010045780A
公开(公告)日：2010-02-25
申请号：JP2009185637
申请日：2009-08-10
申请人： Infineon Technologies Ag , インフィネオンテクノロジーズアクチエンゲゼルシャフト
发明人： ILKOV NIKOLAY
IPC分类号： H03K17/693
CPC分类号： H03K17/04123 , H03K17/102 , H03K2217/0054
摘要： PROBLEM TO BE SOLVED: To shorten a switching time by switching for a parallel connection to a switching resistor until a voltage in a control terminal of a switching transistor reaches a predetermined value, and by reducing a resistance connected to the control terminal of the switching transistor without reducing a gate capacitance of the switching transistor. SOLUTION: A switch 10 includes a switching transistor 12, a switching resistor R, connected between a control terminal 14 of the switching transistor and a switching control terminal 16, and an accelerating element 18. The accelerating element includes a resistance smaller than a resistance of the switching resistor, the accelerating element being adapted to be connected in parallel to the switching resistor upon switching of the switching transistor until a voltage at the control terminal of the switching transistor has reached a predetermined value. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：通过切换开关电阻器的并联连接来缩短开关时间，直到开关晶体管的控制端子中的电压达到预定值，并且通过减小连接到控制端子的电阻该开关晶体管不降低开关晶体管的栅极电容。解决方案：开关10包括连接在开关晶体管的控制端子14和开关控制端子16之间的开关晶体管12，开关电阻器R和加速元件18.加速元件包括小于所述开关电阻器的电阻，所述加速元件适于在开关晶体管切换时并联连接到所述开关电阻器，直到所述开关晶体管的控制端子处的电压达到预定值。版权所有（C）2010，JPO＆INPIT

64. 发明专利

JP4226509B2 Drive circuit and the power supply of the voltage-driven switching element 有权
公开(公告)号：JP4226509B2
公开(公告)日：2009-02-18
申请号：JP2004099459
申请日：2004-03-30
申请人：株式会社タムラ製作所
发明人：優久保田 , 公男吉見 , 潔大日方 , 和紀松澤 , 革良邵
IPC分类号： H02M1/08 , H02M3/335 , H03K17/0412 , H03K17/16 , H03K17/687 , H03K17/691
CPC分类号： H03K17/691 , H03K17/04123

66. 发明专利

JP2008503751A Mosfet drive circuit, programmable power supply and semiconductor test equipment 审中-公开
公开(公告)号：JP2008503751A
公开(公告)日：2008-02-07
申请号：JP2007517710
申请日：2005-06-21
申请人：株式会社アドバンテスト
发明人：信宏佐藤
IPC分类号： G01R31/28 , G01R31/26 , G05F1/40 , H03K17/00 , H03K17/0412 , H03K17/687 , H03K17/78 , H03K17/785
CPC分类号： H03K17/785 , H03K17/04123 , H03K17/6872
摘要：半導体試験装置に使用されるプログラマブル電源において、電流レンジや出力リレーにおける大電流の高速切り換えを可能とする。
半導体試験装置１のプログラマブル電源１０に設けられたスイッチ部２０のＭＯＳＦＥＴ駆動回路２２において、光絶縁素子２２−１の受光部２２−１２からの電流によりコンデンサ部２２−１２に電荷が蓄積される。アナログスイッチ部２２−３の切り換えによりＳＷＡがＯＮ（ＳＷＢがＯＦＦ）となると、コンデンサ部２２−１２に蓄積されていた電荷によりＭＯＳＦＥＴ部２１の各ＭＯＳＦＥＴのゲートがチャージされＯＮ状態となる。一方、アナログスイッチ部２２−３のＳＷＢがＯＮ（ＳＷＡがＯＦＦ）となると、ＭＯＳＦＥＴのゲートがディスチャージされる。

67. 发明专利

JP2007036218A Active drive of normally-on and normally-off cascode connection configuration device through unsymmetrical cmos 有权
标题翻译：通过不对称CMOS进行正常和正常关闭的CASCODE连接配置设备的主动驱动
公开(公告)号：JP2007036218A
公开(公告)日：2007-02-08
申请号：JP2006176993
申请日：2006-06-27
申请人： Internatl Rectifier Corp , インターナショナル・レクチファイヤー・コーポレーションInternational Rectifier Corporation
发明人： SALATO MAURIZIO , SOLDANO MARCO
IPC分类号： H01L21/338 , H01L21/822 , H01L27/04 , H01L29/778 , H01L29/812
CPC分类号： H03K17/6877 , H03K17/04123 , H03K2017/6875
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling a high electron mobility transistor (HEMT) through a cascode circuit. SOLUTION: The cascode circuit according to the present invention comprises a first and second switch, a condenser connected to a source of the first switch, a source of a HEMT connected to a drain of the first switch, and a controller controlling the first and second switch. This method can be obtained by defining a state A in which it is controlled that the first switch is OFF and the second switch is ON and the condenser is allowed to be charged, thereby stabilizing a drain voltage of the HEMT around a HEMT gate threshold voltage. The method further defines a state B in which it is controlled that the first switch is ON and the second switch is substantially OFF, and a charge accumulated in the condenser is maintained. By changing the states, further the method allows an output capacitance of the first switch from the condenser to be more rapidly charged. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供通过共源共栅电路控制高电子迁移率晶体管（HEMT）的方法。解决方案：根据本发明的共射共振电路包括第一和第二开关，连接到第一开关的源极的电容器，连接到第一开关的漏极的HEMT的源极和控制器第一和第二开关。该方法可以通过限定其中第一开关被断开并且第二开关导通并且允许电容器被充电的状态A来获得，由此使围绕HEMT门极限电压的HEMT的漏极电压稳定。该方法进一步限定状态B，其中控制第一开关导通并且第二开关基本上截止，并且保持在冷凝器中累积的电荷。通过改变状态，进一步该方法允许来自冷凝器的第一开关的输出电容更快地充电。版权所有（C）2007，JPO＆INPIT

68. 发明专利

JP2007028278A Drive circuit 审中-公开
标题翻译：驱动电路
公开(公告)号：JP2007028278A
公开(公告)日：2007-02-01
申请号：JP2005208513
申请日：2005-07-19
申请人： Denso Corp , 株式会社デンソー
发明人： MIKI TAKESHI , KANAYAMA MITSUHIRO
IPC分类号： H03K17/04 , H02M1/08 , H02M3/155 , H03K17/687
CPC分类号： H03K17/6877 , H03K17/04123 , H03K17/0414 , H03K17/08122 , H03K2217/0063
摘要： PROBLEM TO BE SOLVED: To drive an output transistor up to a higher switching frequency. SOLUTION: When command signals Sc are set to an L level, a transistor Q19 is turned ON, a transistor Q20 is turned OFF, transistors Q21 and Q22 are turned ON, and a MOSFET Q11 is shifted from OFF to ON. A base current flowing through the transistor Q21 is limited by a resistor R19 at this time, and a charge accumulated in a base region is decreased. When the command signals Sc are set again to an H level while a base current is flowing through the transistor Q21, the base-accumulated charge of the transistors Q21 and Q22 disappears in a short time due to the existence of the resistor R19, a diode D15, and a resistor R20, so that a turn-off time is shortened. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：驱动输出晶体管达到更高的开关频率。解决方案：当指令信号Sc设置为L电平时，晶体管Q19导通，晶体管Q20截止，晶体管Q21和Q22导通，MOSFET Q11从OFF变为ON。此时流过晶体管Q21的基极电流被电阻器R19限制，并且在基极区域中累积的电荷减少。当基极电流流过晶体管Q21而将指令信号Sc再次设定为H电平时，晶体管Q21，Q22的基极累积电荷由于电阻R19的存在而在短时间内消失，二极管 D15和电阻器R20，使得关断时间缩短。版权所有（C）2007，JPO＆INPIT

69. 发明专利

JP2007501544A High-frequency control of the semiconductor switch 审中-公开
公开(公告)号：JP2007501544A
公开(公告)日：2007-01-25
申请号：JP2006521752
申请日：2004-07-27
申请人：コーニンクレッカフィリップスエレクトロニクスエヌヴィKoninklijke Philips Electronics N.V.
发明人：ゲオルク、ザウアーレンダー , トーマス、デュルバウム , トニー、ロペス , トビアス、ゲオルク、トーレ
IPC分类号： H03K17/04 , H02M1/08 , H03K17/00 , H03K17/0412 , H03K17/0416 , H03K17/687
CPC分类号： H03K17/04163 , H03K17/04123 , H03K2217/0036 , H03K2217/009 , Y10T307/747
摘要：共振ゲートドライバ回路は、例えば、ＭＯＳＦＥＴの効率的なスイッチングを提供する。しかし、共振ゲートドライバ回路は、高いスイッチング周波数が必要とされる用途を可能にさせないことがしばしばある。本発明によれば、共振ゲートドライバ回路のインダクタのプリチャージングが実行される。これは、ＭＯＳＦＥＴの極めてエネルギー効率が良い高速な動作を可能にさせる。

70. 发明专利

JP3678208B2 Load-driving semiconductor device 有权
公开(公告)号：JP3678208B2
公开(公告)日：2005-08-03
申请号：JP2002117161
申请日：2002-04-19
申请人：株式会社デンソー
发明人：今井　　祐志
IPC分类号： H01L27/04 , G05F1/56 , H01L21/822 , H01L21/8249 , H01L27/06 , H03K17/0412 , H03K17/06 , H03K17/082 , H03K17/22 , H03K17/687
CPC分类号： H03K17/0822 , H03K17/04123 , H03K17/063 , H03K17/223

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