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61. 发明专利

JP2007291426A Coaxial type vacuum arc vapor deposition source and vapor deposition apparatus using the same 有权
标题翻译：同轴型真空蒸汽沉积源和蒸气沉积装置
公开(公告)号：JP2007291426A
公开(公告)日：2007-11-08
申请号：JP2006118144
申请日：2006-04-21
申请人： Tokyo Institute Of Technology , Ulvac Japan Ltd , 国立大学法人東京工業大学 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , SAKAE KENICHIRO , HATA SEIICHI , YAMAUCHI RYUSUKE , SAKURAI JUNPEI , SHIMOKAWABE AKIRA
IPC分类号： C23C14/24 , H01L21/285
摘要： PROBLEM TO BE SOLVED: To provide a coaxial type vacuum arc vapor deposition source where a short circuit between a vapor deposition material and a trigger electrode is prevented, and stable arc discharge can be performed, and to provide a vapor deposition apparatus using the same. SOLUTION: The coaxial type vacuum arc vapor deposition source comprises: a cylindrical anode electrode 6; a columnar vapor deposition material 7 whose central axis is nearly aligned with the central axis of the anode electrode 6, and arranged at the inside of the anode electrode 6; a cylindrical insulating material 8 arranged around the vapor deposition material 7; and a cylindrical trigger electrode 9 arranged around the insulating member 8. Arc discharge is induced between the anode electrode 6 and the vapor deposition material 7 by trigger discharge between the trigger electrode 9 and the vapor deposition material 7, and particles released from the vapor deposition material 7 are released from an anode release port 60. The edge face 7a on the side of the anode release port 60 in the vapor deposition material 7 is arranged so as to be recessed only by a first recess reference value with respect to the edge face 8a on the side of the anode release port 60 in the insulating member 8, and the edge face 9a on the side of the anode release port 60 in the trigger electrode 9 is arranged so as to be recessed only by a second recess reference value with respect to the edge face 8a on the side of the anode release port 60 in the insulating member 8. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种同时型真空电弧气相沉积源，其中防止气相沉积材料和触发电极之间的短路，并且可以进行稳定的电弧放电，并提供使用一样。解决方案：同轴型真空电弧气相沉积源包括：圆柱形阳极电极6; 柱状蒸镀材料7，其中心轴与阳极电极6的中心轴线大致对准，并配置在阳极电极6的内部; 布置在气相沉积材料7周围的圆柱形绝缘材料8; 以及布置在绝缘构件8周围的圆柱形触发电极9.通过触发电极9和气相沉积材料7之间的触发放电，在阳极6和气相沉积材料7之间引起电弧放电，并且从气相沉积材料7从阳极释放口60释放。气相沉积材料7中的阳极释放口60侧的边缘面7a被布置成仅相对于边缘面凹入第一凹槽参考值 8a，在绝缘构件8中的阳极释放口60侧，并且触发电极9中的阳极释放口60一侧的边缘面9a被布置成仅凹入第二凹槽基准值，相对于绝缘构件8中的阳极释放口60侧的边缘面8a。版权所有（C）2008，JPO＆INPIT

62. 发明专利

JP2007291425A Coaxial vacuum arc vapor deposition source, and vapor deposition apparatus using the same 有权
标题翻译：同轴真空蒸发器沉积源和蒸气沉积装置
公开(公告)号：JP2007291425A
公开(公告)日：2007-11-08
申请号：JP2006118143
申请日：2006-04-21
申请人： Tokyo Institute Of Technology , Ulvac Japan Ltd , 国立大学法人東京工業大学 , 株式会社アルバック
发明人： SAKAE KENICHIRO , SAITO ATSUSHI , HARA YASUHIRO , AGAWA YOSHIAKI , HATA SEIICHI , YAMAUCHI RYUSUKE , SAKURAI JUNPEI , SHIMOKAWABE AKIRA
IPC分类号： C23C14/24 , H01J37/34 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To provide a coaxial vacuum arc vapor deposition source capable of stabilizing the trigger discharge and suppressing occurrence of any trouble of the arc discharge, and a vapor deposition apparatus using the same.
SOLUTION: The coaxial vacuum arc vapor deposition source comprises a cylindrical anode electrode 6, a columnar vapor deposition material 7 arranged inside the anode electrode 6 with its center axis being substantially matched with the center axis of the anode electrode 6, a cylindrical insulating member 8 tightly fitted around the vapor deposition material 7, and a cylindrical trigger electrode 9 tightly fitted around the insulating member 8. The trigger discharge is performed between the trigger electrode 9 and the vapor deposition material 7 to induce the arc discharge between the anode electrode 6 and the vapor deposition material 7, and particles emitted from a side surface of the vapor deposition material 7 are emitted from an aperture of the anode electrode 6. A slit part 20 extending in its axial direction for partially cutting the insulating member 8 is formed in the insulating member 8, and a slit part 30 extending in its axial direction for partially cutting the trigger electrode 9 is formed in the trigger electrode 9. The trigger electrode 9 is fastened by a fastening mechanism 40.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够稳定触发放电并抑制电弧放电的任何问题的同轴真空电弧气相沉积源，以及使用其的蒸镀装置。解决方案：同轴真空电弧气相沉积源包括圆柱形阳极电极6，布置在阳极电极6内部的柱状气相沉积材料7，其中心轴线基本上与阳极电极6的中心轴线相匹配，圆柱形绝缘构件8紧密地装配在蒸镀材料7周围，圆筒形触发电极9紧密配合在绝缘构件8周围。触发放电在触发电极9和蒸镀材料7之间进行，以在阳极电极6和气相沉积材料7，从蒸镀材料7的侧面发射的粒子从阳极电极6的孔射出。沿轴向延伸以部分切割绝缘构件8的狭缝部20为形成在绝缘构件8中的狭缝部30和沿其轴向延伸的狭缝部30，以部分地切割触发器el 电极9形成在触发电极9中。触发电极9通过紧固机构40紧固。版权所有（C）2008，JPO＆INPIT

63. 发明专利

JP2007169677A Film deposition apparatus and film deposition method 有权
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：JP2007169677A
公开(公告)日：2007-07-05
申请号：JP2005365281
申请日：2005-12-19
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of efficiently depositing a thin film having a high film quality. SOLUTION: The film deposition apparatus 1 includes a magnetic field forming device 5, and the magnetic field forming device 5 forms first and second magnetic line groups Ma, Mb being parallel to each other and having opposite directions at the inside of a vacuum tank 2. When first and second vapor deposition sources 30a, 30b are selected one by one and charged particles are discharged in order, it is possible to allow the charged particles discharged from the first and second vapor deposition sources 30a, 30b to reach the same substrate by forming the magnetic line groups capable of bending charged particles having the same charge, in the charged particles discharged from the first and second vapor deposition sources 30a, 30b, to the same direction. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供能够有效地沉积具有高膜质量的薄膜的成膜装置。解决方案：成膜装置1包括磁场形成装置5，磁场形成装置5形成彼此平行并在真空内部具有相反方向的第一和第二磁线组Ma，Mb 当第一和第二蒸镀源30a，30b一个接一个地选择并且带电粒子依次排出时，可以使从第一和第二蒸镀源30a，30b排出的带电粒子达到相同通过在从第一和第二气相沉积源30a，30b排出的带电粒子中形成具有相同电荷的带电粒子的磁线组，形成相同的方向。版权所有（C）2007，JPO＆INPIT

64. 发明专利

JP2007026816A Charged particle accelerator and its maintenance method 有权
标题翻译：充电颗粒加速器及其维护方法
公开(公告)号：JP2007026816A
公开(公告)日：2007-02-01
申请号：JP2005205570
申请日：2005-07-14
申请人： Ulvac Japan Ltd , Univ Waseda , 学校法人早稲田大学 , 株式会社アルバック
发明人： AGAWA YOSHIAKI , FUJIMAKI MAKOTO , OKI YOSHIMICHI
IPC分类号： H05H5/02 , H01J37/30
摘要： PROBLEM TO BE SOLVED: To provide a charged particle accelerator in which device installing space can be reduced and in which maintenance characteristics can be improved without complicating device constitution.
SOLUTION: A high voltage terminal 3 and an acceleration tube 4 connected to this high voltage terminal 3 are arranged in a high pressure tank 2, a compressed dry air is selected as an insulating gas in the high pressure tank 2, an insulating is made to be a compressed dry air, and a partition 32 to partition the maintenance space M1 and non-maintenance space M2 inside the high pressure tank 2 is installed non-airtightly.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以减少装置安装空间的带电粒子加速器，并且可以在不使装置构造复杂化的情况下提高维护特性。
解决方案：连接在该高压端子3上的高电压端子3和加速管4配置在高压槽2内，在高压罐2中选择压缩干燥空气作为绝缘气体，绝缘被制成压缩干燥空气，并且非气密地安装用于分隔高压罐2内的维护空间M1和非维护空间M2的隔板32。版权所有（C）2007，JPO＆INPIT

65. 发明专利

JP2005135818A Insulation method of charged particle accelerator and high-voltage generating circuit 审中-公开
标题翻译：充电颗粒加速器和高压发生电路的绝缘方法
公开(公告)号：JP2005135818A
公开(公告)日：2005-05-26
申请号：JP2003372184
申请日：2003-10-31
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SATAKOKU SHINJI , TORISU SHIGEMITSU
IPC分类号： H05H5/02 , H01J37/248
摘要： PROBLEM TO BE SOLVED: To provide a method for insulating a charged particle accelerator and high-voltage generating circuit, by which the withstanding voltage between the high-voltage generating section and a sealed vessel is improved, while avoiding an enlargement of an apparatus.
SOLUTION: In an ion implanting apparatus 10, compressed dry air is filled inside a high-pressure tank (sealed vessel) 18, in order to carry out electrical insulation between the high-voltage tank (sealed vessel) 18 constituting the electrically-charged particle accelerator 30 and the high-voltage generating sections (high voltage terminal 20, high-voltage generating device 21). As the compressed dry air, air having humidity of 55% or lower under pressure of gauge pressure 0.3 MPa is used. Thus, an improvement in the withstanding voltage is attained while improving the maintainability.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于绝缘带电粒子加速器和高压发生电路的方法，通过该方法，高电压产生部分和密封容器之间的耐受电压得到改善，同时避免了仪器。解决方案：在离子注入装置10中，将压缩的干燥空气填充在高压罐（密封容器）18的内部，以在构成电气的高压罐（密封容器）18之间进行电绝缘高电压端子20，高电压生成装置21）。作为压缩干燥空气，使用表压为0.3MPa的压力下的湿度为55％以下的空气。因此，在提高维护性的同时，可以提高耐压。版权所有（C）2005，JPO＆NCIPI

66. 发明专利

JP2005105314A Vapor deposition source, vapor deposition system having the vapor deposition source, and method of producing thin film 审中-公开
标题翻译：蒸气沉积源，具有蒸发沉积源的蒸气沉积系统，以及生产薄膜的方法
公开(公告)号：JP2005105314A
公开(公告)日：2005-04-21
申请号：JP2003337729
申请日：2003-09-29
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HORIUCHI TAKASHI , CHIN KOKUKA , HARA YASUHIRO , AMANO SHIGERU , YAMAGUCHI KOICHI , TANEMURA MASAYUKI
IPC分类号： C23C14/24 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To deposit a thin film of a reaction product without reducing a film deposition rate.
SOLUTION: A gas introduction member 25 is arranged at the opening part of a cylindrical anode electrode 21. A reactive gas is introduced from a jetting port 28 formed thereon, and a reactive gas atmosphere higher in pressure than the other region is formed near the opening of the anode electrode 21. When vapor deposition material particles are released from the inside of the anode electrode 21 by arc discharge, the vapor deposition material particles pass through the reactive gas atmosphere and react with the reactive gas there. A reaction product flies toward a film deposition object 14 to grow the thin film of the reaction product on the surface of the film deposition object 14. Thus, the reactive gas atmosphere of relatively high pressure can be formed while maintaining the pressure in the inside of a vacuum tank 11 low. Hence, the reaction product particles are not scattered, and the film deposition rate is not reduced.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在不降低膜沉积速率的情况下沉积反应产物的薄膜。解决方案：气体引入构件25布置在圆筒形阳极电极21的开口部分处。反应性气体从形成在其上的喷射口28导入，形成压力高于其它区域的反应气体气氛靠近阳极电极21的开口。当通过电弧放电从阳极电极21的内部释放气相沉积材料颗粒时，气相沉积材料颗粒通过反应气体气氛并与其中的反应性气体反应。反应产物朝向成膜物体14飞行，以在成膜物体14的表面上生长反应产物的薄膜。因此，可以形成相对高压的反应气体气氛，同时保持内部的压力真空罐11低。因此，反应产物颗粒不会散射，并且膜沉积速率不降低。版权所有（C）2005，JPO＆NCIPI

67. 发明专利

JP2004277871A Film deposition method 有权
公开(公告)号：JP2004277871A
公开(公告)日：2004-10-07
申请号：JP2003075058
申请日：2003-03-19
申请人： National Institute Of Advanced Industrial & Technology , Ulvac Japan Ltd , 株式会社アルバック , 独立行政法人産業技術総合研究所
发明人： AGAWA YOSHIAKI , GOTO SEIICHI , KIUCHI MASATO , SUGIMOTO TOSHIMOTO
IPC分类号： C01B31/02 , C23C16/26 , C23C16/503
摘要： PROBLEM TO BE SOLVED: To film-deposit a carbon nanotube on a substrate with a large area. SOLUTION: A substrate 17 is carried in a vacuum tank 11. AC pulse voltage is applied to the space between a sample stage 16 and an electrode 18. A gaseous starting material is introduced into the vacuum tank 11, and a thin film of a carbon nanotube is grown onto the surface of a thin film of a catalyst material. Thus, the carbon nanotube can be film-deposited even on the surface of the substrate with a large area only by increasing the areas of the sample stage 16 and the electrode 18. COPYRIGHT: (C)2005,JPO&NCIPI

68. 发明专利

JP2004263266A Deposition apparatus and deposition method 有权
公开(公告)号：JP2004263266A
公开(公告)日：2004-09-24
申请号：JP2003056548
申请日：2003-03-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HORIUCHI TAKASHI , CHIN KOKUKA , HARA YASUHIRO , AMANO SHIGERU , YAMAGUCHI KOICHI
IPC分类号： H05H1/48 , C23C14/24 , C23C14/32 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To prolong the service life of a vapor-deposition source. SOLUTION: A deposition apparatus 1 is constituted by setting that an impedance in a course for passing an arc current becomes the maximum value in the arc current at the interval of ≥ 1 μsec and ≤ 50μsec after the application of voltage to a trigger electrode. In this way, even in the case the capacity of a condenser 45 is made smaller, the peak current value of the arc current does not become low and the intensity of magnetic field formed with the arc current does not become weak and the arc current can reach a substrate by bending flying direction of charged particles in the vapor-deposition material. Further, in the case the capacity of the condenser 45 is made smaller and power supplied to the vapor-deposition material 31 is made smaller, since the fused material of the vapor-deposition material 31 hardly spatters and an insulating member 36 for insulating the trigger electrode 34 from the vapor-deposition material 31 is hardly soiled, the service life of the vapor-deposition source 3 can be prolonged. COPYRIGHT: (C)2004,JPO&NCIPI

69. 发明专利

JP2004022202A Vacuum treatment device for generating negative charge oxygen ion 有权
公开(公告)号：JP2004022202A
公开(公告)日：2004-01-22
申请号：JP2002171631
申请日：2002-06-12
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , YAMAGUCHI KOICHI , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： A61L2/20 , H01J27/02 , H01J27/26 , H01J37/08
摘要： PROBLEM TO BE SOLVED: To provide a vacuum treatment device for generating a negative charge oxygen ion which is capable of uniformly generating the negative charge oxygen ion throughout the whole circular porous ceramic substrate that has a large area in order to increase the irradiation area of the negative charge oxygen ion irradiated in a circular form, and which has a simple structure.
SOLUTION: In the vacuum treatment device for generating a negative charge oxygen ion 1, one closed end of a silica tube 20 capable of evacuating the inside of the tube is interposed between a circular porous ceramic substrate 3 and a PBN heater 2, and the circular porous ceramic substrate 3 is mounted on a metal substrate stage 25 provided on the silica tube 20. Under an oxygen atmosphere generated by oxygen introduced through an oxygen introduction pipe 29 that penetrates through the side of the substrate stage 25 positioned between the ceramic substrate 3 and the silica tube 20, the porous ceramic substrate 3 is heated by the PBN heater 2 through the silica tube 20 and thereby the negative charge oxygen ion is generated.
COPYRIGHT: (C)2004,JPO

70. 发明专利

JP2004002907A Process for forming silicon oxide thin film 审中-公开
公开(公告)号：JP2004002907A
公开(公告)日：2004-01-08
申请号：JP2002133682
申请日：2002-05-09
申请人： National Institute Of Advanced Industrial & Technology , Ulvac Japan Ltd , 株式会社アルバック , 独立行政法人産業技術総合研究所
发明人： AGAWA YOSHIAKI , KIUCHI MASATO , MATSUTANI TAKAOMI
IPC分类号： C23C16/42 , C23C16/48 , H01L21/316
摘要： PROBLEM TO BE SOLVED: To provide a process for easily and reproducibly forming a silicon oxide thin film at a low temperature. SOLUTION: The silicon oxide thin film is formed in the presence of oxygen at ≤300°C by spraying a material gas obtained by vaporizing hexamethyldisilane onto a substrate placed inside a film-forming chamber while simultaneously applying an ion beam such as argon generated by an ion source onto the substrate at ≤300 eV . COPYRIGHT: (C)2004,JPO

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