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61. 发明专利

JP2008251685A Light-emitting device and light generating module 审中-公开
标题翻译：发光装置和发光模块
公开(公告)号：JP2008251685A
公开(公告)日：2008-10-16
申请号：JP2007088810
申请日：2007-03-29
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , HATTORI YASUSHI , NUNOGAMI SHINYA , TACHIBANA KOICHI
IPC分类号： H01S5/022 , H01L33/28 , H01L33/32 , H01L33/50 , H01L33/56 , H01L33/60 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a light emitting module capable of efficiently taking out light. SOLUTION: The light emitting device includes a first light emitting element 2a which emits, in the opposite direction from each other, excitation light L11 from first and second end faces, facing each other, a first reflecting body 1a which includes a recess consisting of a bottom surface 10a where the first light emitting element 2a is arranged and first and second side surfaces which face the first and second end faces respectively and reflect the excitation light L11. Each of the first and second side surfaces comprises, from the bottom surface 10a toward outside, concave parts 11a and 11b continuous to the bottom surface 10a, convex parts 12a and 12b continuous to the concave parts 11a and 11b, as well as concave parts 13a and 13b continuous the convex parts 12a and 12b. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够有效地取出光的发光模块。解决方案：发光器件包括：第一发光元件2a，其沿彼此相反的方向从相对于第一和第二端面的激励光L11发射;第一反射体1a，其包括凹部由配置有第一发光元件2a的底面10a和分别面对第一和第二端面的第一和第二侧面反射激发光L11。第一侧表面和第二侧表面中的每一个包括从底表面10a到外侧，与底表面10a连续的凹部11a和11b，与凹部11a和11b连续的凸部12a和12b以及凹部13a 13b连续地形成凸部12a，12b。版权所有（C）2009，JPO＆INPIT

62. 发明专利

JP2007324411A Semiconductor light-emitting device and manufacturing method therefor and illumination apparatus using the same 审中-公开
标题翻译：半导体发光装置及其制造方法及其照明装置
公开(公告)号：JP2007324411A
公开(公告)日：2007-12-13
申请号：JP2006153714
申请日：2006-06-01
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , NAKO HAJIME , SAITO SHINJI , NUNOGAMI SHINYA
IPC分类号： H01L33/22 , H01L33/32 , H01L33/38 , H01L33/50 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a nitride group III-V compound semiconductor light-emitting device that can efficiently extract light to the outside and has high efficiency. SOLUTION: The nitride group III-V compound semiconductor light-emitting device has a substrate 1, an n-type semiconductor layer 2 comprising a nitride group III-V compound semiconductor on the substrate 1, and a light-emitting layer 4 comprising the nitride group III-V compound semiconductor on the n-type semiconductor layer 2. The light-emitting device further has a p-type semiconductor layer 7 comprising the nitride group III-V compound semiconductor on the light-emitting layer 4, and p-type semiconductor contact layers 8 formed into a pattern shape on the p-type semiconductor layer 7 and comprising the nitride group III-V compound semiconductor that contains p-type impurities of high concentration. The light-emitting device further has p-side electrodes 11 on the p-type semiconductor contact layers 8 and an n-side electrode 12 that energizes the light-emitting layer 4, by applying a voltage among the n-side electrode 12 and the p-side electrodes 11. Light-extracting efficiency can be improved by a constitution extracting a light through regions, in which p-type semiconductor contact layer 8 does not exist. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以有效地将光提取到外部并具有高效率的氮化物III-V族化合物半导体发光器件。解决方案：氮化物III-V族化合物半导体发光器件具有基板1，在基板1上包括氮化物III-V族化合物半导体的n型半导体层2和发光层4 包括在n型半导体层2上的氮化物III-V族化合物半导体。发光器件还包括在发光层4上包含氮化物III-V族化合物半导体的p型半导体层7，以及 p型半导体接触层8在p型半导体层7上形成为图案形状，并且包含含有高浓度的p型杂质的氮化物III-V族化合物半导体。发光装置在p型半导体接触层8和n侧电极12上还具有p侧电极11，其通过在n侧电极12和N侧电极12之间施加电压而对发光层4通电 p侧电极11.通过提取不存在p型半导体接触层8的区域的结构，可以提高取光效率。版权所有（C）2008，JPO＆INPIT

63. 发明专利

JP2006253673A Semiconductor light emitting element and light emitting device 有权
标题翻译：半导体发光元件和发光器件
公开(公告)号：JP2006253673A
公开(公告)日：2006-09-21
申请号：JP2006037095
申请日：2006-02-14
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO SHINJI , NUNOGAMI SHINYA
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/38 , H01L33/50
摘要： PROBLEM TO BE SOLVED: To obtain a high luminous efficiency by suppressing absorption into a light emitting layer, even when internal reflection occurs at the light emitting layer of a light emitting element.
SOLUTION: A light emitting element comprises a laminate including a light emitting layer 107, and a first cladding layer 104 and a second cladding layer 109 provided on their respective sides of the light emitting layer; a pair of first high reflection layers 201a and 201b provided on their respective sides of the light emitting layer 107 in a first direction perpendicular to the laminating direction of the laminate; and a low reflection layer 203, and a second high reflection layer 202 provided on their respective sides of the light emitting layer in a second direction perpendicular to the laminating direction and crossing the first direction.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：即使当在发光元件的发光层处发生内部反射时，通过抑制对发光层的吸收来获得高发光效率。解决方案：发光元件包括层叠体，其包括发光层107，以及设置在发光层的各自侧面上的第一包层104和第二包层109。一对第一高反射层201a和201b，其在垂直于层叠方向的层叠方向的第一方向上设置在发光层107的各自侧面上; 和低反射层203，以及第二高反射层202，其在垂直于层叠方向的第二方向上设置在发光层的各自侧上并与第一方向交叉。版权所有（C）2006，JPO＆NCIPI

64. 发明专利

JP2006093683A Semiconductor substrate, semiconductor element and semiconductor light emitting element 有权
标题翻译：半导体基板，半导体元件和半导体发光元件
公开(公告)号：JP2006093683A
公开(公告)日：2006-04-06
申请号：JP2005243330
申请日：2005-08-24
申请人： Toshiba Corp , 株式会社東芝
发明人： TACHIBANA KOICHI , HONGO CHIE , NUNOGAMI SHINYA , ONOMURA MASAAKI
IPC分类号： H01L29/201 , H01L21/205 , H01L21/331 , H01L21/338 , H01L29/04 , H01L29/737 , H01L29/778 , H01L29/812 , H01L33/16 , H01L33/32 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To enhance performance of a semiconductor element by improving flatness of each semiconductor layer crystal-growing on a GaN substrate in a dimension equivalent of a target semiconductor element. SOLUTION: There are provided: a GaN substrate 11 having a surface orientation defined by an absolute value of an off-angle of the surface from ä0001} plane towards direction lying in a range of 0.14 degree to 0.35 degree and by an absolute value of an off-angle of the surface from ä0001} plane towards direction lying in a range of 0.00 degree to 0.06 degree, a nitride III-V compound semiconductor layer 12 laminated on the GaN substrate 11; and an element structure part 13-20 on the nitride III-V compound semiconductor layer 12. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了通过提高在与半导体元件相当的尺寸的GaN衬底上晶体生长的每个半导体层的平坦度来提高半导体元件的性能。解决方案：提供了一种GaN衬底11，其具有由表面偏离角的绝对值从ä0001}面朝向<1-100>方向限定在0.14度至0.35范围内的表面取向以及0.00〜0.06度的范围内的表面从ä0001}面向<11-20>方向的偏角的绝对值，叠层在GaN基板上的氮化物III-V化合物半导体层12 11; 以及氮化物III-V化合物半导体层12上的元件结构部分13-20。版权所有（C）2006，JPO＆NCIPI

65. 发明专利

JP2013091805A Method for producing red light-emitting phosphor 有权
标题翻译：生产红色发光磷光体的方法
公开(公告)号：JP2013091805A
公开(公告)日：2013-05-16
申请号：JP2013005416
申请日：2013-01-16
申请人： Toshiba Corp , 株式会社東芝
发明人： OKADA AOI , FUKUDA YUMI , MATSUDA NAOHISA , MITSUISHI IWAO , NUNOGAMI SHINYA , ARUBESAARU KEIKO , KATO MASANORI
IPC分类号： C09K11/08 , C09K11/64
CPC分类号： C09K11/7731 , C09K11/0883 , C09K11/7734 , H01L27/15 , H01L33/502 , H01L33/504 , H01L2224/48091 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a white LED luminescent device with high color rendering/high efficiency and wide color gamut/high efficiency; and a production method of red light-emitting phosphor enabling to prepare the device.SOLUTION: The production method of red light-emitting phosphor in embodiments is a method for producing a phosphor having general formula (1): (MEC)MAlON. In formula, M is Sr; EC is Eu; element Mis Si; 0
摘要翻译：要解决的问题：提供具有高显色性/高效率和宽色域/高效率的白光LED发光装置; 以及能够制备该装置的红色发光荧光体的制造方法。实施例中的红色发光荧光体的制造方法是具有通式（1）的荧光体的制造方法：（M 1-x EC M 1 b A1 c N d 。式中，M为Sr; EC是Eu 元素M 1 是Si; 0

66. 发明专利

JP2011187737A Semiconductor light emitting apparatus, and method of manufacturing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：JP2011187737A
公开(公告)日：2011-09-22
申请号：JP2010052220
申请日：2010-03-09
申请人： Toshiba Corp , 株式会社東芝
发明人： GOTODA TORU , OKA TOSHIYUKI , NUNOGAMI SHINYA , ZAIMA KOTARO
IPC分类号： H01L33/38 , H01L33/32
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/40 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To reduce the number of processes and manufacturing costs, and to reduce a risk of physical damage to a compound semiconductor in manufacture and deterioration in electrical characteristics. SOLUTION: After an isolation trench 21 is formed in a stripe shape on a compound semiconductor layer 1 formed on a sapphire substrate 20, a plated layer 6 is formed on an entire surface of the compound semiconductor layer 1, so that the plated layer 6 can be used as a support substrate after releasing the sapphire substrate 20. Thus, it becomes unnecessary to thermally compress another support substrate onto the compound semiconductor 1 and inconveniences do not occur, where the support substrate is warped by a thermal effect in thermocompression bonding, stress is applied to the support substrate by the warpage, and, for example, the support substrate is cracked. Also, the plated layer 6 can be formed by an electrolytic plating method, thus reducing the number of manufacturing processes as compared with thermocompression bonding and reducing manufacturing costs. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：减少制造工艺和制造成本的数量，并且降低制造中的化合物半导体的物理损伤风险和电特性的劣化。解决方案：在形成在蓝宝石衬底20上的化合物半导体层1上形成条纹形状的隔离沟槽21之后，在化合物半导体层1的整个表面上形成镀层6，在释放蓝宝石衬底20之后，层6可以用作支撑衬底。因此，不需要将另一个支撑衬底热压到化合物半导体1上，并且不会发生不便，其中支撑衬底由于热压缩的热效应而翘曲接合时，通过翘曲对支撑基板施加应力，例如，支撑基板破裂。此外，镀层6可以通过电解电镀法形成，因此与热压接合相比减少了制造工艺的数量并降低了制造成本。版权所有（C）2011，JPO＆INPIT

67. 发明专利

JP2011187670A Semiconductor light-emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2011187670A
公开(公告)日：2011-09-22
申请号：JP2010051165
申请日：2010-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KIMURA SHIGEYA , SATO TAISUKE , ITO TOSHIHIDE , OKA TOSHIYUKI , NUNOGAMI SHINYA
IPC分类号： H01L33/38 , H01L29/41 , H01L33/32
CPC分类号： H01L33/36 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that decentralizes a current density distribution and makes a light emission distribution homogeneous. SOLUTION: The semiconductor light-emitting element includes: a layered structure comprising a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light-emitting portion provided between the first semiconductor layer 10 and second semiconductor layer 2; a first electrode 40 provided on a surface where the first semiconductor layer is exposed on a side of a first principal surface of the first semiconductor layer of the layered structure by selectively removing the second semiconductor layer and light-emitting portion on the first principal surface; and a second electrode 50 provided to a part of the second semiconductor layer on the side of the first principal surface, wherein the first electrode 40 includes a first pad portion 41 and a first extension portion 42 extending from the first pad portion 41, and the first extension portion 42 includes a gradual increase portion 421 gradually increasing in width in a direction, orthogonal to the extension direction of the first extension portion 42, from the first pad portion 41 toward a tip of the first extension portion 42. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供分散电流密度分布并使发光分布均匀的半导体发光元件。解决方案：半导体发光元件包括：层状结构，包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层10之间的发光部分和第二半导体层2; 通过选择性地除去第一主表面上的第二半导体层和发光部分，设置在第一半导体层在层叠结构的第一半导体层的第一主表面的一侧的表面上的第一电极40; 以及第二电极50，其设置在所述第一主表面侧的所述第二半导体层的一部分上，其中所述第一电极40包括第一焊盘部分41和从所述第一焊盘部分41延伸的第一延伸部分42，第一延伸部分42包括逐渐增加部分421，其沿着与第一延伸部分42的延伸方向垂直的方向从第一衬垫部分41朝向第一延伸部分42的尖端的宽度逐渐增加。：（C）2011，JPO＆INPIT

68. 发明专利

JP2011187639A Semiconductor light emitting element 有权
标题翻译：半导体发光元件
公开(公告)号：JP2011187639A
公开(公告)日：2011-09-22
申请号：JP2010050673
申请日：2010-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： ITO TOSHIHIDE , TACHIBANA KOICHI , NUNOGAMI SHINYA
IPC分类号： H01L33/40 , H01L33/32
CPC分类号： H01L31/022466 , B82Y20/00 , H01L31/035236 , H01L33/42
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element using an ITON layer for a transparent conductor and achieving low drive voltage, high luminous efficiency, and uniformed luminous intensity distribution. SOLUTION: The semiconductor light emitting element includes: a substrate; an n-type semiconductor layer formed on the substrate; an active layer formed on the n-type semiconductor layer; a p-type semiconductor layer formed on the active layer and having an uppermost part composed of a p-type GaN layer; an ITON (indium-tin-oxynitride) layer formed on the p-type GaN layer; an ITO (indium-tin-oxide) layer formed on the ITON layer; a first metal electrode formed at a part on the ITO layer; and a second metal electrode connected with the n-type semiconductor layer to be formed. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种使用用于透明导体的ITON层的半导体发光元件，并实现低驱动电压，高发光效率和均匀的发光强度分布。解决方案：半导体发光元件包括：基板; 在该基板上形成的n型半导体层; 形成在所述n型半导体层上的有源层; 形成在有源层上并具有由p型GaN层构成的最上部的p型半导体层; 形成在p型GaN层上的ITON（铟 - 锡 - 氮氧化物）层; 形成在ITON层上的ITO（铟锡氧化物）层; 在ITO层的一部分上形成的第一金属电极; 以及与要形成的n型半导体层连接的第二金属电极。版权所有（C）2011，JPO＆INPIT

69. 发明专利

JP2011187606A Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：JP2011187606A
公开(公告)日：2011-09-22
申请号：JP2010050178
申请日：2010-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： SUGAI MAKI , SAITO SHINJI , HASHIMOTO REI , HATTORI YASUSHI , HWANG JONGIL , TOYAMA MASAKI , NUNOGAMI SHINYA
IPC分类号： H01S5/22
CPC分类号： H01L33/30 , H01S5/22 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device which is driven at a low voltage and excellent in cleavage, and a method of manufacturing the laser device.
SOLUTION: The semiconductor laser device includes a GaN substrate; a semiconductor layer formed on a top surface of the GaN substrate; a ridge formed at an upper portion in the semiconductor layer; a recess formed at the bottom surface of the GaN substrate. The recess has a depth smaller than the thickness of the GaN substrate. The device also has a notch deeper than the recess, formed on a side surface, crossing an extension direction of the ridge on a side of the bottom surface of the GaN substrate, and separated from the recess across the GaN substrate. Furthermore, the device has a first electrode formed on the top surface of the ridge and a second electrode formed on the bottom surface of the recess. The total thickness of the GaN substrate and the semiconductor layer is 100 μm or larger, and a distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or longer and 50 μm or shorter.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种以低电压驱动且切割性优异的半导体激光器件及其制造方法。解决方案：半导体激光器件包括GaN衬底; 形成在所述GaN衬底的顶表面上的半导体层; 在半导体层的上部形成的脊; 形成在GaN衬底的底表面处的凹陷。凹槽的深度比GaN衬底的厚度小。该器件还具有比形成在侧表面上的凹槽更深的切口，该凹槽与GaN衬底的底表面的侧面上的脊的延伸方向交叉，并且跨越GaN衬底与凹部分离。此外，该器件具有形成在脊的顶表面上的第一电极和形成在凹部的底表面上的第二电极。 GaN衬底和半导体层的总厚度为100μm以上，脊的顶面与凹部的底面之间的距离为5μm以上且50μm以下。版权所有（C）2011，JPO＆INPIT

70. 发明专利

JP2011187285A Light emitting device 审中-公开
标题翻译：发光装置
公开(公告)号：JP2011187285A
公开(公告)日：2011-09-22
申请号：JP2010050664
申请日：2010-03-08
申请人： Harison Toshiba Lighting Corp , Toshiba Corp , ハリソン東芝ライティング株式会社 , 株式会社東芝
发明人： HATTORI YASUSHI , TOYAMA MASAKI , SAITO SHINJI , NUNOGAMI SHINYA , HASHIMOTO REI , HWANG JONGIL , SUGAI MAKI , UENO TAKASHI , KINOSHITA JUNICHI , UENO MISAKI
IPC分类号： F21S2/00 , F21V3/00 , F21V3/04 , F21Y101/02 , G02B6/00 , H01S5/022
CPC分类号： F21V7/22
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device in which a semiconductor laser diode is used as a light source to efficiently obtain visible light having high uniformity of a luminance distribution.
SOLUTION: The light emitting device is characterized by including: the semiconductor laser diode that emits a laser beam; a light guide component that includes an upper surface, a lower surface, two side faces opposite to each other, and two end faces opposite to each other, the laser beam being incident from the first end face, the light guide component having indentation in the lower surface, the laser beam being reflected by the lower surface and emitted in an upper surface direction; a luminous component that is placed on an upper surface side of the light guide component and absorbs the laser beam emitted from the light guide component and emits visible light; and a substance that is in contact with the lower surface and two side faces of the light guide component and has a refractive index lower than that of the light guide component.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种使用半导体激光二极管作为光源以有效获得具有高亮度分布均匀性的可见光的发光器件。解决方案：发光器件的特征在于包括：发射激光束的半导体激光二极管; 导光部件，其包括上表面，下表面，彼此相对的两个侧面和两个彼此相对的端面，所述激光束从所述第一端面入射，所述导光部件具有凹陷部下表面，激光束被下表面反射并在上表面方向上发射; 放置在导光部件的上表面侧的发光部件，吸收从导光部件射出的激光，发出可见光; 以及与导光部件的下表面和两个侧面接触并且折射率低于导光部件的折射率的物质。版权所有（C）2011，JPO＆INPIT

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