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61. 发明专利

JPS62115462A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPS62115462A
公开(公告)日：1987-05-27
申请号：JP25608285
申请日：1985-11-15
申请人： TOSHIBA CORP
发明人： YOSHIZAWA HIDEJI , MIKI AKIRA , KAGA HIDEKAZU , SAKUMA HISASHI , ADACHI GENICHI
IPC分类号： G03G5/08 , G03G5/082
摘要： PURPOSE:To improve the photoconductive characteristics (electrophotographic characteristics) and environmental resistance of an electrophotographic sensitive body by using N-type amorphous silicon hydride as at least part of the sensitive body. CONSTITUTION:A barrier layer 22, a charge transferring layer 23 and a charge generating layer 31 are formed on an electrically conductive support 21. The barrier layer 22 is made of a-Si contg. H. The charge transferring layer 23 is made of a-SiH contg. at least one among C, O and N. The 1st layer 24 of the charge generating layer 31 is made of N-type a-Si and has 1-10mum thickness. The 2nd layer 25 is made of muC-SiH or a-SiH and has 0.1-5mum thickness. The charge transferring layer 23 and the charge generating layer 31 contain at least one kind of element selected among the group III and V elements in the periodic table.

62. 发明专利

JPS6299760A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPS6299760A
公开(公告)日：1987-05-09
申请号：JP23980485
申请日：1985-10-26
申请人： TOSHIBA CORP
发明人： YOSHIZAWA HIDEJI , KAGA HIDEKAZU , MITANI WATARU , YAMAZAKI MUTSUKI
IPC分类号： G03G5/08 , G03G5/082
摘要： PURPOSE:To obtain the photoconductive material which is capable of being produced with ease, and has a high resistance and excellent electrostatic chargeability, and has high photosensitive characteristics in ranges of a visible ray and a near infra-red ray by forming a blocking layer of an amorphous silicon or a microcrystalline silicon and a photoconductive layer of a laminating body composed of the N-type amorphous silicon contg. a hydrogen and the amorphous silicon respectively. CONSTITUTION:The blocking layer 103 composed of muC-Si or a-Si contg. the silicon atom as a base material and contg. the hydrogen atom and at least one or more atoms selected from a carbon, an oxygen and a nitrogen atoms, and the photoconductive layer 102 are laminated on a conductive substrate body 101 made of aluminium. Further, the photoconductive layer 102 is produced by laminating the N-type amorphous silicon a-Si layer 104 contg. the silicon atom as the base material and contg. the hydrogen atom, and the amorphous silicon layer 105 contg. the silicon atom as the base material and contg. the hydrogen atom and at least one or more atoms selected from the carbon, the oxygen and the nitrogen atoms so as to make thick the concentration of said atoms on the side of the substrate in a direction of the thickness of the layer.

63. 发明专利

JPS6299759A ELECTROPHOTOGRAPHIC SENSITIVE BODY 失效
公开(公告)号：JPS6299759A
公开(公告)日：1987-05-09
申请号：JP23980385
申请日：1985-10-26
申请人： TOSHIBA CORP
发明人： YOSHIZAWA HIDEJI , KAGA HIDEKAZU , MITANI WATARU , YAMAZAKI MUTSUKI
IPC分类号： G03G5/08 , G03G5/082
摘要： PURPOSE:To obtain the photoconductive material which is capable of being produced with ease, and has a high resistance and excellent electrostatic chargeability, and has high photosensitive characteristics in ranges of a visible ray and a near infra-red ray by forming a blocking layer of an amorphous silicon or a microcrystalline silicon and a photoconductive layer of a laminating body composed of the N-type amorphous silicon contg. a hydrogen and the microcrystalline silicon respectively. CONSTITUTION:The blocking layer 103 composed of muC-Si or a-Si contg. the silicon atom as a base material and contg. the hydrogen atom and at least one or more atoms selected from a carbon, an oxygen and a nitrogen atoms, and the photoconductive layer 102 are laminated on a conductive substrate body 101 made of aluminium. Further, the photoconductive layer 103 is produced by laminating the N-type amorphous silicon a-Si layer 104 contg. the silicon atom as the base material, and contg. the hydrogen atom, and the microcrystalline silicon layer 105 contg. the silicon atom as the base material and contg. the hydrogen atom and at least one or more atoms selected from the carbon, the oxygen and the nitrogen atoms so as to make thick the concentration of said atoms on the side of the substrate in a direction of the thickness of the layer.

64. 发明专利

JPS6163851A Electrophotographic sensitive body 失效
标题翻译：电子感应敏感体
公开(公告)号：JPS6163851A
公开(公告)日：1986-04-02
申请号：JP18453584
申请日：1984-09-05
申请人： Toshiba Corp
发明人： KAGA HIDEKAZU
IPC分类号： G03G5/043 , G03G5/08 , G03G5/14
CPC分类号： G03G5/08
摘要： PURPOSE:To obtain a sharp image with substantial sensitivity by providing a photoconductive layer having ruggedness on the surface onto a conductive substrate so that the attenuation of the incident light owing to the interference of the reflected light reversed in phase as a result of irregular reflection of incident light and the incident light, i.e., the apparent decrease in the photosensitivity is suppressed. CONSTITUTION:A photosensitive body 10 formed with the photoconductive layer 12 having ruggedness on the surface 13 onto the conductive substrate 11 is used. The photosensitive body 20 provided with the laminated photosensitive layer 22 consisting of a carrier generating layer 22-1 and carrier transfer layer 22-2 on the conductive substrate 21 and formed with the ruggedness on the surface 23 of the layer 22-2 is otherwise used. The photosensitive body provided with the multi-layered photosensitive layers by forming an intermediate layer between the carrier transfer layer and generating layer or by other methods is equally well. The formation of the ruggedness on the surface is executed simply by subjecting the surface to plasma etching after the layer formation. The generation of the interference fringes by the light reflected from the surface and the light reflected from the substrate surface are thus eliminated for the long wavelength light such as laser light and the sharp copy is obtd. with the high sensitivity.
摘要翻译：目的：为了通过在表面上提供在导电基板上具有坚固性的光电导层，以使得由于反射光的干涉而引起的入射光的衰减由于不规则反射的结果而相反地衰减，从而获得具有相当灵敏度的清晰图像入射光和入射光，即光敏性的明显降低被抑制。构成：使用形成有导电层12的感光体10，该导电层12在表面13上具有导电基板11上的凹凸。另外，在导电基板21上设置有由载体生成层22-1和载体转印层22-2构成的并且在层22-2的表面23上形成有凹凸的层叠感光层22的感光体20被使用。通过在载体转印层和生成层之间形成中间层或通过其它方法设置有多层感光层的感光体同样良好。通过在层形成之后对表面进行等离子体蚀刻简单地执行表面上的凹凸的形成。因此，对于诸如激光的长波长光，消除了从表面反射的光和从基板表面反射的光的干涉条纹的产生，并且可以清楚地看到。灵敏度高。

65. 发明专利

JPS59185343A Photoconductive member 失效
标题翻译：光电会员
公开(公告)号：JPS59185343A
公开(公告)日：1984-10-20
申请号：JP6132483
申请日：1983-04-06
申请人： Toshiba Corp
发明人： KAGA HIDEKAZU , YAMAZAKI MUTSUKI
IPC分类号： G03G5/08 , G03G5/043 , H01L31/0248
CPC分类号： G03G5/0433
摘要： PURPOSE:To provide high potential retentivity and to prevent residual potential from being produced by successively forming the 1st blocking layer of amorphous silicon having a specified specific resistance value or below and the 2nd blocking layer of amorphous silicon having a specified specific resistance value or above between a support and a photoconductive layer of amorphous silicon. CONSTITUTION:The 1st blocking layer 2 of amorphous silicon (a-Si) having OMEGAcm specific resistance and the 2nd blocking layer 3 of a-Si having >=10 OMEGAcm specific resistance are successively formed on an electrically conductive support 1. A photoconductive layer 4 of a-Si contg. a IIIA group atom such as B is formed on the layer 3. A surface coating layer 5 may be formed on the layer 4 to stabilize the surface of the layer 4. It is preferable that each of the layers 2, 3, 4 is an a-Si layer contg. at least one between H and halogen, and the specific resistance is regulated by adding a small amount of B, P or the like. The layer 5 is an Si layer contg. O, N or H. Thus, a photosensitive a-Si body producing no residual potential and having high sensitivity and a long life is obtd.
摘要翻译：目的：为了提供高电位的保持性，并且通过连续地形成具有规定的电阻率值以下的非晶硅的第1阻挡层和具有规定的电阻率以上的非晶硅的第2阻挡层，具有规定的比电阻值以上的非晶硅的第2阻挡层，非晶硅的载体和光电导层。构成：具有<= 10 9欧米高比电阻率的非晶硅（a-Si）的第一阻挡层2和具有> = 10 9欧姆欧姆比特电阻的a-Si的第二阻挡层3依次形成在导电支撑件1. a-Si的光电导层4 在层3上形成诸如B的IIIA族原子。可以在层4上形成表面涂层5以使层4的表面稳定。优选地，层2,3,4中的每一个为 a-Si层限制 H和卤素之间的至少一个，并且通过加入少量的B，P等来调节电阻率。层5是Si层。 O，N或H.因此，不产生残留电位并且具有高灵敏度和长寿命的光敏a-Si体。

66. 发明专利

JPS5962865A Electrophotographic receptor 失效
标题翻译：电子摄影受体
公开(公告)号：JPS5962865A
公开(公告)日：1984-04-10
申请号：JP17432182
申请日：1982-10-04
申请人： Toshiba Corp
发明人： SUZUKI KATSUMI , KAGA HIDEKAZU , ADACHI GENICHI , OBARA MASAO
IPC分类号： G03G5/08
CPC分类号： G03G5/08
摘要： PURPOSE:To obtain an electrophotographic receptor having an excellent electrostatic charging characteristic, dark attenuation characteristic and photosensitive characteristic by providing amorphous silicon members having the optical band gap and dark resistance larger than those of an amorphous silicon photoconductive layer on the top and bottom of said photoconductive layer. CONSTITUTION:The 1st and 2nd amorphous silicon members 2, 4 have dark resistance rhoD=10 OMEGAcm or above, and the implantation of the surface electric charge of a positive polarity and the electric charge of a negative polarity induced in a substrate 1 to an amorphous photoconductive layer 3 is prohibited respectively. Light is hardly absorbed in the member 4 having large optical band gap Egopt and the light absorption takes place in the surface layer of the layer 3 and generates electron and hole which are implanted to the members 2, 4 thereby neutralizing the surface charges thereof. As a result, the surface charge is effectively attenuated.
摘要翻译：目的：通过提供具有光学带隙和暗电阻的非晶硅构件，获得具有优异静电充电特性，暗衰减特性和光敏特性的电子照相受体，其比所述光电导层顶部和底部上的非晶硅光导电层层。构成：第一和第二非晶硅构件2,4具有暗电阻rhoD = 10 13Ω/ cm以上，并且注入正极性的表面电荷和在衬底1中感应的负极性电荷分别禁止非晶光电导层3。在具有大的光学带隙Egopt的构件4中几乎不吸收光，并且在层3的表面层中发生光吸收，并且产生被注入到构件2,4中的电子和空穴，从而中和其表面电荷。结果，表面电荷被有效地衰减。

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