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61. 发明专利

JP2013044023A Estimation method of dielectric breakdown voltage of multi-component alloy 有权
标题翻译：多组分合金电介质破坏电压的估计方法
公开(公告)号：JP2013044023A
公开(公告)日：2013-03-04
申请号：JP2011182834
申请日：2011-08-24
申请人： Toshiba Corp , 株式会社東芝
发明人： SASAKI HARUKA , YAMAMOTO ATSUSHI , KUSANO TAKASHI , ASARI NAOKI , SASAGE KOSUKE
IPC分类号： C23C14/24 , H01H33/664
摘要： PROBLEM TO BE SOLVED: To measure the composition dependency of dielectric breakdown voltage characteristics of a contact material composed of a multi-component alloy in a short period of time.SOLUTION: A thin film 6 in which components are changed in succession, is formed by heating and vaporizing a plurality of metal-based substances selected from Cu, Cr, Ag and the like used as contact materials, and depositing the resulting vapor on a substrate 5. Then, the thin film 6 is grounded as a flat plate electrode, and a needle electrode 11 is arranged opposite to the thin film 6 with a predetermined gap from the thin film 6. Thereafter, the dielectric breakdown voltage between the needle electrode 11 and the thin film 6 is measured while moving the thin film 6 in the direction orthogonal to the axis direction of the needle electrode 11 at a prescribed interval. The estimation method searches for the relationship between varied component amounts and dielectric breakdown voltage.
摘要翻译：要解决的问题：测量在短时间内由多组分合金构成的接触材料的介电击穿电压特性的组成依赖性。解决方案：通过加热和蒸发用作接触材料的多种选自Cu，Cr，Ag等的金属基物质，并将所得到的蒸气沉积在其中，连续地改变组分的薄膜6形成然后，将薄膜6作为平板电极接地，并且将针状电极11与薄膜6隔开预定的间隙与薄膜6相对配置。此后，介电击穿电压在以与规定间隔的针状电极11的轴方向正交的方向移动薄膜6的同时测量针状电极11和薄膜6。该估计方法搜索不同成分量和介电击穿电压之间的关系。版权所有（C）2013，JPO＆INPIT

62. 发明专利

JP2012220208A Partial discharge detection device and partial discharge detection method 审中-公开
标题翻译：部分放电检测装置和部分放电检测方法
公开(公告)号：JP2012220208A
公开(公告)日：2012-11-12
申请号：JP2011082948
申请日：2011-04-04
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAHASHI MASAO , KIMURA TATSUYA , MATSUI TERUHISA , SHIOIRI SATORU , KUSANO TAKASHI , SAKAGUCHI WATARU
IPC分类号： G01R31/12
摘要： PROBLEM TO BE SOLVED: To provide a partial discharge detection device and a partial discharge detection method which achieve improved detection sensitivity to partial discharge in an insulator of an electrical device, as described in an embodiment of the present invention.SOLUTION: A partial discharge detection device according to an embodiment of the present invention relates to a partial discharge detection device for detecting partial discharge in an electrical device including: a conductor to which a voltage is applied when energized; an insulator which covers the conductor; and a ground layer provided on a surface of the insulator. Further, the partial discharge detection device includes: an electrode, provided on the ground layer, for detecting a surface potential; wiring for detecting noise; subtraction means for calculating a difference between the surface potential detected by the electrode and the noise detected by the wiring; and display means for displaying a signal indicating the difference calculated by the subtraction means.
摘要翻译：要解决的问题：如本发明的实施例所述，提供一种局部放电检测装置和局部放电检测方法，其实现了在电气装置的绝缘体中提高对局部放电的检测灵敏度。解决方案：根据本发明的实施例的局部放电检测装置涉及一种用于检测电气设备中的局部放电的局部放电检测装置，包括：通电时施加电压的导体; 覆盖导体的绝缘体; 以及设置在绝缘体的表面上的接地层。此外，局部放电检测装置包括：设置在接地层上的用于检测表面电位的电极; 检测噪声的接线用于计算由电极检测的表面电位与由布线检测到的噪声之间的差的减法装置; 以及显示装置，用于显示指示由减法装置计算出的差值的信号。版权所有（C）2013，JPO＆INPIT

63. 发明专利

JP2012134014A Contact material for vacuum valve 审中-公开
标题翻译：真空阀的接触材料
公开(公告)号：JP2012134014A
公开(公告)日：2012-07-12
申请号：JP2010285163
申请日：2010-12-21
申请人： Toshiba Corp , 株式会社東芝
发明人： KUSANO TAKASHI , YAMAMOTO ATSUSHI , SASAGE KOSUKE , KATO KENJI , SASAKI HARUKA
IPC分类号： H01H33/664 , B22F1/00 , C22C1/05 , C22C29/08 , C22C32/00 , H01H1/023 , H01H1/025 , H01H11/04
摘要： PROBLEM TO BE SOLVED: To provide a contact material whose breaking characteristics can be improved by suppressing variations in composition of a conductive component and an arc-resistant component.SOLUTION: The contact material for use in a vacuum valve having a pair of contacts 5 and 6, which are freely brought into contact with/separated from each other, contains a conductive component composed of at least one of Ag and Cu and an arc-resistant component of a carbide and, if necessary, has an auxiliary component added thereto. The contact material constituting the contacts 5 and 6 is characterized in that: average particle diameters of the conductive component, the arc-resistant component, and the auxiliary component contained in the contact material are so similar that differences between the average particle diameters are within 50%; and carbon which does not combine with the arc-resistant component and is called a nonmetal carbon compound, is less than 0.05 mass% in an alloy.
摘要翻译：要解决的问题：提供一种通过抑制导电组分和抗电弧组分的组成变化可以提高其断裂特性的接触材料。解决方案：用于具有自由接触/分离的一对触点5和6的真空阀中的接触材料包含由Ag和Cu中的至少一种构成的导电组分，碳化物的耐电弧成分，如果需要，可以添加辅助成分。构成触点5和6的接触材料的特征在于：接触材料中包含的导电组分，耐电弧组分和辅助组分的平均粒径是如此相似的，即平均粒径之间的差异在50 ％; 和不与耐电弧成分结合的碳称为非金属碳化合物，在合金中小于0.05质量％。版权所有（C）2012，JPO＆INPIT

64. 发明专利

JP2011140060A Tool for friction stirring treatment and contact material for vacuum valve 审中-公开
标题翻译：用于真空阀的摩擦搅拌处理和接触材料的工具
公开(公告)号：JP2011140060A
公开(公告)日：2011-07-21
申请号：JP2010003287
申请日：2010-01-08
申请人： Toshiba Corp , 株式会社東芝
发明人： YAMAMOTO ATSUSHI , KUSANO TAKASHI , SASAKI HARUKA , SASAGE KOSUKE
IPC分类号： B23K20/12 , C22C9/00 , C22C32/00 , H01H1/025 , H01H11/04 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To micronize Cr particles by applying friction stirring treatment to a surface of a Cu-Cr-based alloy.
SOLUTION: A tool for friction stirring treatment is provided with a shaft 1 fixed to a rotating device, a base 2 fixed to an end of the shaft 1, and a tip part 3 which is fixed to the base 2 and has a stirring groove 4 on the circumference thereof diagonally crossed to the axial direction. The tip part 3, which employs one of W, Mo, W-Re, and Mo-Re as a base material, and contains hard ceramic particles that is harder than the base material dispersed therein, frictionally stirs the Cu-Cr-based alloy chiefly used for a vacuum valve to micronize the Cr particles.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过对Cu-Cr基合金的表面进行摩擦搅拌处理来将Cr颗粒微粉化。解决方案：一种用于摩擦搅拌处理的工具设置有固定到旋转装置的轴1，固定到轴1的端部的基座2和固定到基座2的尖端部3，并且具有在与轴向对角交叉的圆周上的搅拌槽4。使用W，Mo，W-Re和Mo-Re中的一种作为基材并且包含比分散在其中的基体材料硬的硬陶瓷颗粒的尖端部分3摩擦地搅拌Cu-Cr基合金主要用于真空阀将Cr颗粒微粉化。版权所有（C）2011，JPO＆INPIT

65. 发明专利

JP2010163642A Contact point material for vacuum valve 审中-公开
标题翻译：真空阀的接触点材料
公开(公告)号：JP2010163642A
公开(公告)日：2010-07-29
申请号：JP2009005138
申请日：2009-01-13
申请人： Shibafu Engineering Corp , Toshiba Corp , 株式会社東芝 , 芝府エンジニアリング株式会社
发明人： KUSANO TAKASHI , YAMAMOTO ATSUSHI , SASAGE KOSUKE , OKUTOMI ISAO
IPC分类号： C22C29/08 , B22F1/00 , B22F7/00 , C22C1/05 , C22C5/06 , H01H1/023
摘要： PROBLEM TO BE SOLVED: To improve the conducting and fusing properties of an Ag-WC based contact point material while maintaining its excellent cutting properties. SOLUTION: Provided is the contact point material for a vacuum valve using a green compact of Ag powder and WC powder as contact points by a sintering process, wherein an Ag member is placed on the green compact and sintered, thereby Ag infiltrates to form a first contact point layer 6a having the highest Ag content, a second contact point layer 6b having a next high Ag content and a third contact point layer 6c having the lowest Ag content which is predetermined, and the Ag content is increased as it goes to the contact face of the contact point 6. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了提高Ag-WC基接触点材料的导电和熔融性能，同时保持其优异的切割性能。解决方案：提供一种使用Ag粉末和WC粉末的生坯通过烧结工艺作为接触点的真空阀的接触点材料，其中将Ag部件放置在生坯上并烧结，从而Ag渗入形成具有最高Ag含量的第一接触点层6a，具有下一个高Ag含量的第二接触点层6b和具有预定的最低Ag含量的第三接触点层6c，并且Ag含量随着其增加而增加到接触点6的接触面。版权所有（C）2010，JPO＆INPIT

66. 发明专利

JP2009113089A Joining material for vacuum valve 审中-公开
标题翻译：真空阀门接合材料
公开(公告)号：JP2009113089A
公开(公告)日：2009-05-28
申请号：JP2007289936
申请日：2007-11-07
申请人： Shibafu Engineering Corp , Toshiba Corp , 株式会社東芝 , 芝府エンジニアリング株式会社
发明人： KUSANO TAKASHI , YAMAMOTO ATSUSHI , OSABE KIYOSHI , SASAGE KOSUKE , OKUTOMI ISAO
IPC分类号： B23K35/30 , B23K1/00 , B23K1/19 , B23K31/02 , B23K103/04 , C22C5/06 , C22C5/08 , C22C9/00 , C22C9/02 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To obtain a joining material for a vacuum valve which can firmly join stainless parts composing a vacuum valve.
SOLUTION: In the joining material for a vacuum valve, which joins stainless parts composed of an arc shield 11, a support 12, bellows 10, and sealing fittings 2, 3 in a vacuum valve having a pair of contacts 6, 7 which can freely approach/separate in a vacuum, an Ni-containing substance is made present in the brazing filler metal in the vicinity of the stainless parts when a brazing filler metal is melted at a prescribed temperature, so as to be solidified and brazed.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：获得能够牢固地连接构成真空阀的不锈钢部件的真空阀的接合材料。解决方案：在真空阀的接合材料中，该真空阀在具有一对触点6,7的真空阀中连接由电弧屏蔽11，支撑体12，波纹管10和密封配件2,3构成的不锈钢部件其可以在真空中自由接近/分离，当钎料在规定温度下熔化时，在不锈钢部件附近的钎料中存在含Ni物质，以使其固化和钎焊。版权所有（C）2009，JPO＆INPIT

67. 发明专利

JP2005310608A Vacuum valve 审中-公开
标题翻译：真空阀
公开(公告)号：JP2005310608A
公开(公告)日：2005-11-04
申请号：JP2004127619
申请日：2004-04-23
申请人： Shibafu Engineering Corp , Toshiba Corp , 株式会社東芝 , 芝府エンジニアリング株式会社
发明人： OKUTOMI ISAO , KUSANO TAKASHI , HONMA MITSUTAKA , YAMAMOTO ATSUSHI , SEKI KEISEI , OSABE KIYOSHI
IPC分类号： C22C9/00 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To provide a vacuum valve having a contact alloy excellent in withstand voltage characteristics and contact resistance characteristics. SOLUTION: The contact of this vacuum valve is formed of a Cu-Cr based contact material, and when the accumulated amount of nitrogen gas discharged form the contact in a process to heat the contact from a normal temperature to 1,500°C at a fixed temperature rising speed selected in a range of 10-300°C/second is defined as W, and the amount of nitrogen gas discharged from the contact in a process to heat the contact from the normal temperature to 2,600°C at the fixed temperature rising speed equal to the above temperature rising speed selected in the range of 10-300°C/second is defined as W2, the ratio that W1 accounts for in W2 (ratio of W1/W2) is not more than 0.6 and not less than 0.01 by weight. Thereby, the vacuum valve having the contact alloy excellent in withstand voltage characteristics and contact resistance characteristics is obtained. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供具有耐压特性和接触电阻特性优异的接触合金的真空阀。
解决方案：该真空阀的接触由Cu-Cr基接触材料形成，并且当在将接触从常温加热到1500℃的过程中从接触物排出的氮气的累积量在在10-300℃/秒的范围内选择的固定升温速度定义为W，在固定的温度下将接触从常温加热至2600℃的过程中从接触点排出的氮气的量等于在10-300℃/秒范围内选择的上述升温速度的升温速度定义为W2，W1中W1的比例（W1 / W2的比）不大于0.6，而不小于大于0.01重量份。由此，获得具有耐压特性和接触电阻特性优异的接触合金的真空阀。版权所有（C）2006，JPO＆NCIPI

68. 发明专利

JP2004273342A Contact material for vacuum valve, and vacuum valve 审中-公开
标题翻译：真空阀和真空阀的接触材料
公开(公告)号：JP2004273342A
公开(公告)日：2004-09-30
申请号：JP2003064438
申请日：2003-03-11
申请人： Shibafu Engineering Corp , Toshiba Corp , 株式会社東芝 , 芝府エンジニアリング株式会社
发明人： KUSANO TAKASHI , YAMAMOTO ATSUSHI , SEKI KEISEI , OKUTOMI ISAO
IPC分类号： B22F3/24 , C22C1/04 , C22C5/06 , C22C9/00 , C22C9/06 , C23C26/00 , H01H33/66
摘要： PROBLEM TO BE SOLVED: To provide a contact material for vacuum valves and a vacuum valve having improved stability of performances such as break, withstand voltage and electric conduction. SOLUTION: Such a construction is attained that, after a contact material comprising a conductive component and an arc resistant component is incorporated into a vacuum valve, and is opened/closed multiple times, the relationship between the average particle diameter r of the arc resistant component in a degeneration layer newly formed on a contact surface and the average particle diameter R of the arc resistant component in a layer adjacent to the degeneration layer is 0.001≤r/R≤1.0. For example, the occurrence of cracks as shown in (b) in the Figure is eliminated by manufacturing a contact material by the dissolution method, the occurrence of cracks as shown in (c) in the Figure is eliminated by once melting an electric conductive surface alone, and the occurrence of cracks as shown in (a) in the Figure is eliminated by reducing the difference in average particle diameter of the arc resistant component Cr between the degeneration layer and the adjacent layer. In this way, the break property and withstand voltage property can be improved. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供真空阀的接触材料和具有改进的断裂，耐受电压和导电性能的稳定性的真空阀。解决方案：实现这样一种结构，即在包括导电部件和电弧部件的接触材料并入真空阀中并且多次打开/关闭之后，平均粒径r 在接触表面上新形成的退化层中的耐电弧成分和与退化层相邻的层中的电弧成分的平均粒径R为0.001≤r/R≤1.0。例如，通过用溶解法制造接触材料来消除图中（b）所示的裂纹的发生，如图中（c）所示的裂纹的发生通过一旦熔化导电表面而消除并且通过减少退化层和相邻层之间的耐电弧成分Cr的平均粒径的差异来消除图中（a）所示的裂纹的发生。以这种方式，可以提高断裂性和耐电压性。版权所有（C）2004，JPO＆NCIPI

69. 发明专利

JP2004071435A Vacuum circuit breaker 有权
公开(公告)号：JP2004071435A
公开(公告)日：2004-03-04
申请号：JP2002230923
申请日：2002-08-08
申请人： Shibafu Engineering Corp , Toshiba Corp , 株式会社東芝 , 芝府エンジニアリング株式会社
发明人： OKUTOMI ISAO , KUSANO TAKASHI , YAMAMOTO ATSUSHI , MINAMI YOSHIKO , HONMA MITSUTAKA
IPC分类号： H01H33/66
摘要： PROBLEM TO BE SOLVED: To provide a vacuum circuit breaker having an excellent breaking characteristics and an excellent reignition characteristics.
SOLUTION: Each contact of this vacuum circuit breaker is formed of an alloy containing 15-85 wt.% of a conductive constituent formed of a Cu phase, and an arc-resisting constituent, as the remainder, containing Cr as a main constituent. The ratio of the difference (T1-T2) value between a fusion start temperature T1 obtained by measuring the Cu phase on the Celsius basis in a heating process and a coagulation start temperature T2 obtained by measuring the Cu phase on the Celsius basis in a cooling process after heating it to at least 1,200°C to the temperature T1, that is, the ratio [(T1-T2)/T1] is set less than 3.5%. Thereby, both the breaking characteristics and the reignition characteristics can be satisfied.
COPYRIGHT: (C)2004,JPO

70. 发明专利

JP2004068101A Thin film formation system, thin film of multinary material and processes for forming the same and examining character of the same 有权
公开(公告)号：JP2004068101A
公开(公告)日：2004-03-04
申请号：JP2002230247
申请日：2002-08-07
申请人： Shibafu Engineering Corp , Toshiba Corp , 株式会社東芝 , 芝府エンジニアリング株式会社
发明人： YAMAMOTO ATSUSHI , KUSANO TAKASHI , OKUTOMI ISAO
IPC分类号： G01N23/207 , C23C14/04 , C23C14/24 , C23C14/56 , G01N23/225 , G01N25/04 , G01N25/18
摘要： PROBLEM TO BE SOLVED: To provide a system and a process for easily forming a thin film whose composition changes regularly in a surface direction of a substrate. SOLUTION: In the system and the process for forming the thin film of a multinary material, paths through which vaporized materials transfer from evaporation sources 2A, 2B and 2C, which are linear or long in one direction, to the substrate 6 in a vacuum are partially blocked by masking shields 4 to generate gradients of amounts of material flow reaching each position on the substrate. By placing two or more pairs of evaporation sources and masking shields so that composition gradient parts overlap each other, materials having different compositions are simultaneously synthesized on the substrate to form the thin film whose composition regularly changes in the surface direction of the substrate. COPYRIGHT: (C)2004,JPO

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