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61. 发明专利

JP2000096227A MAGNETRON SPUTTERING SYSTEM 失效
公开(公告)号：JP2000096227A
公开(公告)日：2000-04-04
申请号：JP27307898
申请日：1998-09-28
申请人： SHARP KK
发明人： ITO SUSUMU , OUCHIDA TAKASHI , TACHIBANA SHINSUKE , HAYAKAWA HISASHI , FUKUOKA YUSUKE , TANIGUCHI HIROSHI
IPC分类号： H01L21/203 , C23C14/35
摘要： PROBLEM TO BE SOLVED: To allow the system to uniformize film thickness and homogenize film quality while throughput is increased and the power source cost and power source space are reduced. SOLUTION: Among plural target electrodes 9a to 9d drawn up in a 1st film forming chamber 1a and plural target electrodes 29a to 29d drawn up in a 2nd film forming chamber 1b, the ones corresponding with each other in the positional relation are parallel-connected to common power sources 31a to 31d respectively. Substrate trays 11a and 11b are moved synchronously with each other in the positional relation between the parallel-connected target electrodes.

62. 发明专利

JPH11307797A CRYSTAL SOLAR CELL AND SOLAR CELL MODULE, AND ITS MANUFACTURE 失效
公开(公告)号：JPH11307797A
公开(公告)日：1999-11-05
申请号：JP10911398
申请日：1998-04-20
申请人： SHARP KK
发明人： KISHIMOTO KATSUSHI , TANIGUCHI HIROSHI , NOMOTO KATSUHIKO
IPC分类号： H01L31/042 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a crystal solar cell, having such a structure that the leakage from end face can be prevented without etching or cutting on the end face. SOLUTION: This crystal solar cell is provided with a backside electrode 21 on the backside of a p-type or an n-type crystal silicon semiconductor substrate 20 and a crystal layer 22 with reverse polarity on the surface side of the semiconductor substrate 20. A surface electrode 23 comprising a transparent electrode 24 piled on the crystal layer 22 and a lead-out electrode 25 which is formed on the transparent electrode 24 is provided on the surface of the semiconductor substrate 20. The side face of the semiconductor substrate 20 is covered with an insulator 26 made of silicone resin, so as to prevent the leakage therefrom.

63. 发明专利

JPH11261086A PHOTOVOLTAIC DEVICE AND SOLAR BATTERY MODULE 失效
公开(公告)号：JPH11261086A
公开(公告)日：1999-09-24
申请号：JP6143598
申请日：1998-03-12
申请人： SHARP KK
发明人： TANIGUCHI HIROSHI , NAKANISHI TAKESHI , HAYAKAWA HISASHI , NOMOTO KATSUHIKO , TOMITA KOJI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a low-priced photovoltaic device, having very small power loss due to current collection and simply performing in process. SOLUTION: This photovoltatic device is provided with an insulating resin film 2, backside electrodes 3, 4 and 5, an amorphous silicon layer 6 and a transparent electrode 7 formed on a conductive substrate 1. At least a recessed part or a through hole 8 is formed on the above-mentioned photovoltaic device, at least the backside electrodes 3, 4 and 5 are covered by the amorphous silicon layer 6 on the above-mentioned recessed part or the through hole 8. The amorphous silicon layer 6 is covered on the through hole 8, and the transparent electrode 6 is connected to the conductive substrate 1 through the recessed part or the through hole 8.

64. 发明专利

JPH0917733A FORMING METHOD FOR POROUS SILICON THIN FILM 失效
公开(公告)号：JPH0917733A
公开(公告)日：1997-01-17
申请号：JP16087295
申请日：1995-06-27
申请人： SHARP KK
发明人： TANIGUCHI HIROSHI , TANAKA JUNICHI
IPC分类号： C23C16/50 , C23C16/511 , H01L21/205 , H01S5/00 , H01S3/18
摘要： PURPOSE: To make it possible to form a high-quality porous silicon thin film on a substrate by a CVD method by applying a bias of a specified voltage by using a mixed gas of both oxygen gas and silane-based plasma gas by a specified pressure and microwave power under resonance by an electron cyclotron. CONSTITUTION: A silicon substrate is placed on a substrate holder of a CVD equipment, a bias of 0 to 200V is applied to the silicon substrate, and the substrate is held to a predetermined temperature. Moreover, microwave is introduced by a square wave wave guide, and a predetermined magnetic field is applied to a magnetic coil 3. Next, SiH4 gas and O2 gas are introduced to a reaction chamber of a plasma generating chamber 2, a total pressure is kept to 10 to 103 Pa, plasma is generated with 0.1 to 5kW power, and a porous silicon thin film is formed on the silicon substrate. When the silicon substrate forming the porous silicon thin films is irradiated with laser, clear lighting of the laser radiating portion can be confirmed.

65. 发明专利

JPH0846245A FORMING METHOD OF POROUS SILICON LIGHT-EMITTING LAYER 失效
公开(公告)号：JPH0846245A
公开(公告)日：1996-02-16
申请号：JP17575394
申请日：1994-07-27
申请人： SHARP KK
发明人： ONO KIMITAKA , NAKAMURA YOSHINOBU , UGI KYOKO , TANAKA JUNICHI , TANIGUCHI HIROSHI , AKAGI YOSHIRO
IPC分类号： H01L33/34 , H01L33/00
摘要： PURPOSE:To selectively obtain intensive light emission only in a region of arbitrary depth, by locally or uniformly introducing ions of high electronegativity in a silicon substrate, by using an ion implantation method. CONSTITUTION:Oxygen ions 2 are implanted in a P-type silicon substrate 1 doped with boron, under the condition of the kinetic energy of 4MeV and the density of 1X10 ions/cm . An anode composed of the silicon substrate 1 and a cathode composed of a platinum electrode 5 are dipped in hydrofluoric acid solution 6 in a reaction cell. The volume ratio of the solution is HF:H2O=1:1. When a current whose density is 20mA/cm is made to flow for about 13 minutes between the anode and the cathode, electrochemical reaction is generated, and a porous silicon layer 31 having different hole diameters are formed in the region where oxygen in the surface layer of the P-type silicon substrate 1 distribute with high density. Hence the surface of the porous silicon light- emitting layer is not terminated by hydrogen but by ions of high electronegativity. Thereby a light-emitting layer wherein deterioration of luminous intensity caused by light irradiation is little can be obtained.

66. 发明专利

JPH0345896B2 失效
公开(公告)号：JPH0345896B2
公开(公告)日：1991-07-12
申请号：JP4510384
申请日：1984-03-08
申请人： SHARP KK
发明人： TANIGUCHI HIROSHI , FUJII YOSHIHISA , YAMASHITA TAKURO , YOSHIDA MASARU
IPC分类号： H01L23/29 , H01L21/314 , H01L23/31

67. 发明专利

JPH02178630A METHOD AND APPARATUS FOR FORMING THIN POLYIMIDE FILM 失效
公开(公告)号：JPH02178630A
公开(公告)日：1990-07-11
申请号：JP33234788
申请日：1988-12-29
申请人： SHARP KK
发明人： AKAGI YOSHIRO , ISHINO MARIKO , INOUE ATSUHISA , UENISHI SHIGERU , TANIGUCHI HIROSHI
IPC分类号： C08G73/10 , G02F1/1337
摘要： PURPOSE:To uniformize the thickness of a thin polyimide film and to improve the adhesive property thereof by supplying the vapor of polyimide raw materials consisting of plural monomers to a plasma atmosphere to ionize the vapor, transferring the ions by an electric field onto a substrate surface to stick the ions thereon and heating the substrate in this sticking process, thereby forming the thin polyimide film on the substrate. CONSTITUTION:The quartz glass substrate 5b is mounted to a substrate holder 5 and respectively adequate amts. of pyromellitic dianhydride PMDA and oxydianiline ODA are charged into two monomer housing containers 3. The inside of a vacuum chamber 1 is evacuated to a vacuum and the surface of the substrate is cleaned for several minutes by plasma. A voltage is then applied to a substrate holder 5 in such a manner that the holder serves as a negative electrode by a DC power source 17 for the electric field transfer of the ionized polyimide raw material; further, the substrate 5b is heated and held. The respective monomers are heated to evaporate and the heating rate is so controlled that the respective monomers are deposited by evaporation at each equal molar quantity to accelerate the ions of the PMDA and the ODA and the polymn. precursors thereof and to deposit the ions by evaporation on the heated substrate 5b. The thin polyimide film which is uniform even in the projecting parts of the thin film forming surface without lowering the thickness and has the excellent adhesive property is obtd. in this way.

68. 发明专利

JPH0296639A METHOD AND JIG FOR MEASURING INFRARED ABSORPTION SPECTRUM 失效
公开(公告)号：JPH0296639A
公开(公告)日：1990-04-09
申请号：JP25005988
申请日：1988-10-03
申请人： SHARP KK
发明人： ISHINO MARIKO , INOUE ATSUHISA , TANIGUCHI HIROSHI , AKAGI YOSHIRO , NAKAJIMA YOSHIHARU
IPC分类号： G01N1/28 , G01N21/35 , G01N21/3563 , G01N21/84
摘要： PURPOSE:To measure an infrared absorption spectrum by a high sensitivity transmission method by using silicon or germanium having an oxide film on the surface thereof. CONSTITUTION:In order to measure the infrared absorption spectrum of the specimen membrane 3 of a substrate composed of silicon or germanium 1, an oxide film 2 is formed on the surface of the substrate. The surface of this oxide film 2 is similar to that of silicon or germanium 1 and the membrane 3 on the oxide film 2 shows the behavior perfectly similar to that of the membrane 3 on the substrate composed of silicon or zirconium 1. The oxide film 2 having a thickness within a predetermined range shows slight absorption within an infrared absorption spectrum measuring range but does not become an opaque state. Therefore, the absorption only of the oxide film 2 is measured as a background or reference and subtracted from that of the membrane 3 on the oxide film 2 to make it possible to obtain the infrared absorption spectrum only of the membrane 3.

69. 发明专利

JPH01148348A CATION EXCHANGE RESIN AND USE THEREOF 失效
公开(公告)号：JPH01148348A
公开(公告)日：1989-06-09
申请号：JP21940188
申请日：1988-08-31
申请人： SHARP KK
发明人： AKAGI YOSHIRO , OOKA KOJI , UENISHI SHIGERU , TANIGUCHI HIROSHI , ASAHINA HIDEO , ONO KIMITAKA , ISHINO MARIKO , INOUE ATSUHISA , OKAMOTO YASUNARI , NAKAJIMA YOSHIHARU
IPC分类号： B01D15/00 , B01D15/04 , B01J39/18 , C08G73/10 , C10G29/02 , C10G29/20
摘要： PURPOSE:To stably capture various cations by forming a cation exchange resin consisting of polyamido-carboxylic acid units represented by a specified general formula and polyimido units represented by a specified general formula. CONSTITUTION:A cation exchange resin proof against org. solvents is formed with a polyimide type resin consisting of polyamido-carboxylic acid units acting as ion exchange moieties and represented by formula I (where R is a quatervalent org. group and R is a bivalent org. group) and polyimido units represented by formula Il (where R and R are R and R in the formula I). The cation exchange resin is obtd. by dissolving nearly equimolar amts. of tetracarboxylic acid anhydride and diamine in a polar solvent, allowing them to react with each other at 20-100 deg.C for 30min-4hr, applying the resulting polyamido-carboxylic acid soln. and heating the applied soln. at a high temp.

70. 发明专利

JPS6258145A METHOD FOR QUANTITATIVE ANALYSIS OF CARBON 失效
公开(公告)号：JPS6258145A
公开(公告)日：1987-03-13
申请号：JP19794185
申请日：1985-09-06
申请人： SHARP KK
发明人： TANIGUCHI HIROSHI , AKAGI YOSHIRO , MORITA TATSUO , NAKAJIMA YOSHIHARU
IPC分类号： G01N23/22
摘要： PURPOSE:To calculate the content of carbon with high accuracy, by measuring secondary redioactive rays of a standard specimen other than carbon and an unknown specimen and calculating the ratio of the secondary radiation intensities of the standard specimen and the unknown specimen with respect to an element other than carbon. CONSTITUTION:For example, in the quantitative analysis of the content of carbon in amorphous silicon carbide, silicon is used as a standard specimen and an amorphous silicon carbide obtained by plasma decomposition of silane, methane and hydrogen is used as an unknown specimen and measurement is performed by an electronic microprobe method. The K-value being the ratio of the secondary radiation intensities of the unknown specimen and the standard specimen is calculated with respect to silicon and the imaginary K-value of carbon is further determined. ZAF correcting calculation is performed and the content of carbon is calculated from the value bringing the sum of concns. of all componential elements to 100%. Because the content of carbon is calculated by calculating the intensities of secondary radiations with respect to componential elements other than carbon, the content of carbon can be quantified with high reliability without depending on the kind of a carbon structure and the selection of the standard specimen.

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