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1. 发明专利

JP2002114597A METHOD FOR MANUFACTURING CRYSTAL SHEET AND SOLAR CELL WHICH USES THE CRYSTAL SHEET 失效
公开(公告)号：JP2002114597A
公开(公告)日：2002-04-16
申请号：JP2000306978
申请日：2000-10-06
申请人： SHARP KK
发明人： KOMA SHUJI , YANO KOZABURO , TANIGUCHI HIROSHI , NUNOI TORU
IPC分类号： C30B29/06 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a method to obtain a low-cost crystal sheet 2 having a flat surface. SOLUTION: The device for the manufacture of silicon sheets is equipped with a square crucible 4, heater (not shown in the figure) to melt the silicon supplied to the crucible 4, dodecahedral rotary cooling body 1, rotation axis (not shown in the figure) to support the rotary cooling body 1, air knife 5 to blow argon gas to the surface of the silicon sheet 2, gas blowing port 6 to release the silicon sheet 2 from the rotary cooling body 1, and guide part 7 to guide the released silicon sheet 2 to the outside of the device. As for the gas to be blown from the air knife 5 and the gas blowing port 6, argon gas which is the same as the atmospheric gas is used so as to prevent contamination of the silicon sheet 2.

2. 发明专利

JP2002094091A METHOD AND DEVICE FOR MANUFACTURING METAL OR SEMICONDUCTOR SHEET 失效
公开(公告)号：JP2002094091A
公开(公告)日：2002-03-29
申请号：JP2000276442
申请日：2000-09-12
申请人： SHARP KK
发明人： YAMAZAKI ICHIRO , NUNOI TORU , TANIGUCHI HIROSHI
IPC分类号： C01B33/02 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide the manufacturing method of a substrate that can simply form unevenness which is effective for optical confinement on a substrate for a solar cell. SOLUTION: In this manufacturing method of metal or a semiconductor sheet, the metal or a semiconductor material is fused, and the hot-water surface is cooled and at the same time is pulled up as a sheet for obtaining the metal or a semiconductor sheet. In this case, when the hot-water surface is pulled up as the sheet while being cooled, the hot-water surface is vibrated, thus forming the unevenness on the surface of the metal or semiconductor sheet.

3. 发明专利

JP2000208786A MANUFACTURE OF LAMINATED THIN FILM SOLAR BATTERY 失效
公开(公告)号：JP2000208786A
公开(公告)日：2000-07-28
申请号：JP414499
申请日：1999-01-11
申请人： SHARP KK
发明人： KIDOGUCHI SUSUMU , HAYAKAWA HISASHI , TANIGUCHI HIROSHI
IPC分类号： H01L31/04
摘要： PROBLEM TO BE SOLVED: To permit processing of good reproducibility in a relatively wide processing condition range and improve a yield by making the reflectance of a lower electrode layer not smaller than a specific value for a laser beam irradiating from on an upper electrode layer of an adjacent electric power generating region. SOLUTION: Lower electrodes 2a-2c separated via grooves 11 are provided on a substrate 1, photoelectric converting layers 3a-3c are provided covering the lower electrodes, and upper electrodes 4a-4c separated via grooves 13 are provided on the photoelectric converting layers. The lower electrode layer is formed by patterning a material such as gold, silver, aluminum, copper, and nickel, etc., into a desired form to separate it into a plurality of lower electrodes for every electric power generating region (first patterning). The reflectance of the lower electrode layers for a laser beam in a visible light region is not smaller than about 90%. Electric connections 12 are provided between the upper and lower electrodes for the contiguous electric power generating regions, and a laser beam is applied to separate the photoelectric converting material layer into a plurality of photoelectric converting layer for every electric power generating region (second patterning). The upper electrode layer is separated into a plurality of upper electrodes by patterning for every electric power generating region (third patterning).

4. 发明专利

JPH09312268A PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM AND PLASMA ETCHING DEVICE 失效
公开(公告)号：JPH09312268A
公开(公告)日：1997-12-02
申请号：JP12883296
申请日：1996-05-23
申请人： SHARP KK
发明人： SAKAI OSAMU , NOMOTO KATSUHIKO , TANIGUCHI HIROSHI , TOMITA KOJI , YAMAMOTO YOSHIHIRO
IPC分类号： H05H1/46 , C23C16/50 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent non-uniformity in deposition rate in an electrode surface and in distribution of film quality due to the increase in frequency of high-frequency power for plasma excitation, while utilizing advantages of the use of high-frequency electromagnetic waves of frequency bands, such as, VHF band or UHF band, for plasma enhanced CVD processing, that is, the increase in deposition rate due to the increase in plasma density and the reduction in ion damage to the film due to the reduction in ion sheath voltage. SOLUTION: A cathode electrode 101 is caused to have such a shape that an outer edge part 101a on a surface facing an anode electrode 2 is rising. The surface of the rising part of the cathode electrode 101 is caused to be an inclined surface inclined with respect to the surface of the anode electrode 2 which this surfaces faces. Thus, the void between the cathode electrode 101 and the anode electrode 2 is narrower at outer edge parts of the electrodes 101, 2 than at a center part thereof.

5. 发明专利

JPH06150724A TRANSPARENT CONDUCTIVE FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06150724A
公开(公告)日：1994-05-31
申请号：JP29985992
申请日：1992-11-10
申请人： SHARP KK
发明人： UGI KYOKO , TANIGUCHI HIROSHI , AKAGI YOSHIRO
IPC分类号： C23C14/08 , C30B29/16 , G02F1/1343 , H01B5/14 , H01B13/00 , H01L31/04
摘要： PURPOSE:To provide a transparent conductive film with good transparency and small electric resistance so as to use it as an electrode for large currents by providing amorphous layers at regular intervals along the thickness of an ITO film of (100) crystal orientation formed on the upper surface of a base. CONSTITUTION:An ITO film (indium-tin oxide film) 2 of thickness 5000Angstrom with (100) crystal growth and amorphous layers 3, 3 (thickness 100Angstrom ) formed within the ITO film 2 formed with (100) crystal orientation are provided on a glass base 1. Since the amorphous layers are periodically provided along the direction of the thickness of the ITO film, the ITO film in the transparent conductive film is laminated, with (100) crystal orientation of two-dimensional growth. Therefore, the transparent conductive film has small specific resistivity and a large cross section and so can be used as a transparent electrode for large currents.

6. 发明专利

JPH0660723A TRANSPARENT CONDUCTIVE FILM 失效
公开(公告)号：JPH0660723A
公开(公告)日：1994-03-04
申请号：JP21489392
申请日：1992-08-12
申请人： SHARP KK
发明人： TANIGUCHI HIROSHI , KOBA MASAYOSHI
IPC分类号： C30B29/16 , G02F1/1343 , H01B5/14 , H01L31/04
摘要： PURPOSE:To provide a transparent film having fine transparency and low resistance even though film thickness increases by laminating tin-added indium oxide transparent conductive films and transparent insulating films layer-like alternately in a film growth direction. CONSTITUTION:A tin-added indium oxide transparent conductive film (ITO film) 2 is formed in 1.000 angstrom thickness on a glass board 1. An In2O3 film 3 is formed in 1.000 angstrom thickness in the film thickness direction of the ITO film 2. On the board 1 the films 2 and the films 3 are laminated layer-like alternately in five layers so as to constitute complexly a transparent conductive film 4. Thereby, the films 2 having fine translucency and small electric resistance are layered via the films 3 so as to have a large cross section area, and can be used as a transparent electrode for large current.

7. 发明专利

JPH05343716A 失效
公开(公告)号：JPH05343716A
公开(公告)日：1993-12-24
申请号：JP15047992
申请日：1992-06-10
申请人： SHARP KK
发明人： UGI KYOKO , TANIGUCHI HIROSHI , KOBA MASAYOSHI
IPC分类号： C30B23/08 , C30B29/16 , G02B1/02 , H01B5/14 , H01J29/96 , H01L31/04
摘要： PURPOSE:To provide a high quality transparent conducting body material excellent in conductivity and transparency by improving crystallinity. CONSTITUTION:Using a reactive sputtering method that a sintered body target of indium oxide containing 5wt% tin oxide is sputtered in argon gas containing 1% oxygen, an ITO thin film 2 whose crystal is oriented in the (100) direction is formed on a glass substrate 1. The ITO has a improved crystallinity: its crystal has an ideal orientation that the dense plane (100) of the indium oxide is parallel with the substrate plane. This makes the ITO a high quality transparent conducting body material having excellent electric and optical characteristics.

8. 发明专利

JPH05170600A PRODUCTION OF THIN ORGANIC COMPOUND SINGLE CRYSTAL FILM 失效
公开(公告)号：JPH05170600A
公开(公告)日：1993-07-09
申请号：JP34511291
申请日：1991-12-26
申请人： SHARP KK
发明人： INOUE ATSUHISA , TANIGUCHI HIROSHI , AKAGI YOSHIRO , KOBA MASAYOSHI
IPC分类号： C30B29/58
摘要： PURPOSE:To obtain the subject single crystal film improved in quality with its thickness controlled and the original organic compound's sublimation and discharging prevented, by coating a thin organic compound film on a substrate with a material like a polymeric compound followed by melting and recrystallization of the film. CONSTITUTION:A thin film 2a of an organic compound (e.g. merocyanine-PTS complex, 4'-nitrobenzylidene-3-acetoamino-4-methoxyaniline) is first formed on a substrate 1. Second, a coating material 3 (a transparent oxide, polymeric compound) is selectively coated on the thin film 2a using a vacuum deposition technique, sputtering technique, or ion plating technique. Thence, the thin film 2a is melted and recrystallized to obtain the objective thin single crystal film 2c.

9. 发明专利

JPH0570134A OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH0570134A
公开(公告)日：1993-03-23
申请号：JP22788691
申请日：1991-09-09
申请人： SHARP KK
发明人： TANIGUCHI HIROSHI , KOBA MASAYOSHI
IPC分类号： C01G1/00 , C01G29/00 , C22C12/00 , C30B29/22 , H01B12/06 , H01B13/00
摘要： PURPOSE:To obtain oxide superconductor having high superconducting transition temperature and good orientation in c axis. CONSTITUTION:Part of Sr element in a Bi-Sr-Ca-Cu-0 based oxide superconductor is replaced by La element. As a result, b axial length can be changed while keeping superconducting transition temperature higher than the boiling point of liquid nitrogen. When thin film in which part of Sr element of the Bi-Sr-Ca- Cu-0 based oxide superconductor is replaced by La element is formed on a substrate, a substitution amount of Sr element on the interface with the substrate is kept in a prescribed value and the substitution amount of Sr element is reduced, accompanied by growth of a thin film. As a result, the objective oxide superconductor thin film having good matching with lattice constant of the substrate, good orientation of c axis on the surface side and high superconducting transition temperature.

10. 发明专利

JPH03108649A METHOD OF EVALUATING CHARACTERISTICS OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH03108649A
公开(公告)日：1991-05-08
申请号：JP24745989
申请日：1989-09-22
申请人： SHARP KK
发明人： TANIGUCHI HIROSHI , NAKAJIMA YOSHIHARU
IPC分类号： G01N23/227
摘要： PURPOSE:To enable characteristics evaluation of a superconductor without need of cooling and additional working or treatment for measurement and in a short time by evaluating superconductive characteristics of an oxide superconductor from measurement of photoelectron spectroscopy at a room temperature. CONSTITUTION:It is verified that energy of a Cu3dx2-y2 electron and an O2Psigma electron at a room temperature being normally conductive, that is, a value of charge-transfer energy DELTA between Cu and O (Cu O), is in good correlation with a critical temperature (Tc) of an oxide superconductor, and this is utilized to evaluate the superconductive characteristics. In concrete, Cu2p and OIs photoelectron spectrum data of an oxide superconductor sample measured at a room temperature is subjected to numerical analysis based on a Larsson- SawatzKy model so that charge-transfer energy DELTA between Cu and O (Cu O) is calculated and superconductive characteristics are evaluated according to the size of the value. Thus characteristics evaluation of a superconductor can be performed without need of cooling and additional working or treatment for measurement and in a short time.

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