专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明专利

JPH01176634A ELECTRON BEAM-EXCITING ION SOURCE 失效
公开(公告)号：JPH01176634A
公开(公告)日：1989-07-13
申请号：JP33216987
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , KOSHIISHI AKIRA , MATSUDO MASAHIKO , KAWAMURA GOHEI , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To increase ion current density, shorten processing time and increase throughput by accelerating electrons with a single perforated electrode having a multiplicity of electron passage holes and disposed at a boundary area between an electron generating are and an ion generating area. CONSTITUTION:It is constituted such that a single porous electrode 5 having a multiplicity of electron passage holes 5a is disposed at a boundary area between an electron generating area 8 and an ion generating area 9 to accelerate electrons by applying a voltage to a container 7a. In an ion beam-excited ion source for example, the area between a cathode 2 and an anode 5 is made to be the electron generating area while the area between the anode 5 and an ion draw-out slit 7 is made to be the ion generating area 9 where electrons are accelerated to produce ions. This constitution enables to increase ion current density, shorten processing time, and increase throughput.

62. 发明专利

JPH01176632A ELECTRON BEAM-EXCITING ION SOURCE 失效
公开(公告)号：JPH01176632A
公开(公告)日：1989-07-13
申请号：JP33216787
申请日：1987-12-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , KAWAMURA GOHEI , KOSHIISHI AKIRA , MATSUDO MASAHIKO , TAKAYAMA NAOKI
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To increase the throughput with a reduced processing time by arranging a reaction gas supply port for supplying the reaction gas to an ion generating area in the vicinity of a side end portion of an electron generating area of the ion generating area. CONSTITUTION:The area between a cathode 2 and an anode 5 is made to be an electron generating area while the area between the anode 5 and an ion drawing out slit 7 is made to be an ion generating area 9 where the electrons generated in the electron generating area are accelerated and ionized by irradiating to a reaction gas. Further, a reaction gas supply port 10 is disposed at the side end portion of the electron generating area 8 of the ion generating area 9. This constitution enables to obtain a high ion current density, to reduce the time required for ion implantation, and to increase throughput.

63. 发明专利

JPH01160018A DRY ETCHING DEVICE 失效
公开(公告)号：JPH01160018A
公开(公告)日：1989-06-22
申请号：JP31838087
申请日：1987-12-16
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , YOSHINAGA TAKASHI , ARAKI YOICHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To reduce damages of members forming a device by irradiating electrons with a gas having an etching property to make them plasmas and by enabling the etching surface of a semiconductor wafer to selectively move to positions at which etching can or cannot be done. CONSTITUTION:Ions in plasma are accelerated in the plasma sheath formed on the surface of a semiconductor wafer 3 held by a wafer holder 4, are struck as an ion beam, and the semiconductor wafer 3 is etched. During the time, operation of selecting an etching duration or a non-etching duration is performed by turning the semiconductor wafer 3 to the irradiating direction of electron beams, i.e., to the direction of plasma and other directions by rotating the wafer holder 4. Therefore, a shutter mechanism is not needed to be installed at a prestage than the semiconductor wafer 3, i.e., at the plasma side, reducing damages of members forming a device.

64. 发明专利

JPH01143328A DRY ETCHING SYSTEM 失效
公开(公告)号：JPH01143328A
公开(公告)日：1989-06-05
申请号：JP30183387
申请日：1987-11-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , YOSHINAGA TAKASHI , ARAKI YOICHI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable a wafer table to be cooled uniformly and efficiently and to enable a high-speed treatment with highly dense plasma to be realized by providing a cooling mechanism which forms a refrigerant flow radiating toward the periphery from the center of a wafer table at the rear surface of the wafer table. CONSTITUTION:Electrons are directed to etching gas to turn it plasmatic and the surface of a semiconductor wafer 30 which is provided on a wafer table 4b is etched. In this case, a cooling mechanism which forms a refrigerant flow which radiates from the center of the table 4b toward the periphery is provided. The cooling mechanism consists of a cylindrical container 32, an introduction pipe 33, a circular plate 34, and a discharge pipe 35. Then, a radiating refrigerant from the center toward the outside of the table 4b allows the entire surface of the table 4b to be cooled uniformly. Thus, the temperature increase of the wafer 30 is controlled for a high-speed treatment with highly dense plasma.

65. 发明专利

JPH01143327A DRY ETCHING SYSTEM 失效
公开(公告)号：JPH01143327A
公开(公告)日：1989-06-05
申请号：JP30183287
申请日：1987-11-30
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , YOSHINAGA TAKASHI , ARAKI YOICHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/683
摘要： PURPOSE:To improve cooling efficiency of a semiconductor wafer and to enable a high-speed treatment to be performed in highly dense plasma by forming a supporting surface retaining a semiconductor wafer on a plain or in convex shape and by forming a layer consisting of silicone rubber on the supporting surface. CONSTITUTION:Electrons are directed to etching gas to turn it plasmatic and the surface of a semiconductor wafer 30 which is supported by a wafer holder 4 is etched. The holder 4 consists of a cylindrical outer frame 4a consisting of stainless steel, etc., and a disc-like wafer table 4b. In this case, with the holder 4, the supporting surface which supports the wafer 30 is a plain or in convex shape and a silicone rubber layer 4c is provided on the supporting surface. Then, the rubber layer 4c allows coherency between the wafer 30 and the holder 4 to be intensified and the cooling efficiency of the wafer 30 to be improved. Thus, a high-speed treatment with highly dense plasma can be achieved.

66. 发明专利

JPH01105540A PLASMA TREATING DEVICE 失效
公开(公告)号：JPH01105540A
公开(公告)日：1989-04-24
申请号：JP26237187
申请日：1987-10-16
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , YOSHINAGA TAKASHI , ARAKI YOICHI
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065
摘要： PURPOSE:To form large diameter and uniform plasma by providing a means for negating a magnetic field formed in an area where reaction gas is made into plasma from among the magnetic fields formed along a moving direction of electrons. CONSTITUTION:Reaction gas is made plasma by drawing out, accelerating and irradiating electrons from plasma by which treating materials are treated. Magnetic fields are formed along a moving direction of the electrons and magnetic field forming coils 9-12 are provided for guiding the electrons. At that time an antimagnetic field coil 13 for negating the magnetic fields formed in an area where the reaction gas is made plasma by the use of the coils 9-12 is arranged. Thereupon electron beams are diffused in an etching area 22 outside and large diameter plasma is generated. Etching gas is activated by the diffused electron beams and high density plasma is generated. Therefore, large diameter and uniform plasma is formed.

67. 发明专利

JPH01105539A PLASMA TREATING DEVICE 失效
公开(公告)号：JPH01105539A
公开(公告)日：1989-04-24
申请号：JP26237087
申请日：1987-10-16
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , YOSHINAGA TAKASHI , ARAKI YOICHI
IPC分类号： H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/24
摘要： PURPOSE:To perform a uniform plasma even on a large caliber wafer and the like by preparing electrodes for polarizing electrons by an electric field and diffusing them outside. CONSTITUTION:A prescribed reaction gas is made plasma by drawing out electrons from the plasma, accelerating and irradiating it, and a treating material is treated by the plasma. At that time electrodes 9 for polarizing and diffusing electrons outside are prepared. The electron beam introduced in an etching area is polarized and diffused outside by the use of the electrodes. Etching gas is activated by the diffused electron beam to generate high density plasma. Thereupon larger diameter and more uniform plasma than the conventional is formed without lengthening the length of an etching area. Therefore, even large caliber wafers and the like are treated uniformly.

68. 发明专利

JPS63190300A PLASMA APPARATUS 失效
公开(公告)号：JPS63190300A
公开(公告)日：1988-08-05
申请号：JP2130487
申请日：1987-01-31
申请人： TOKYO ELECTRON LTD , RIKAGAKU KENKYUSHO
发明人： ISHII NOBUO , TAKAYAMA NAOKI , KAWAMURA GOHEI , HARA TAMIO , HAMAGAKI MANABU , NANBA SUSUMU , AOYANAGI KATSUNOBU
IPC分类号： H05H1/24 , H01J37/32 , H05H1/48

69. 发明专利

JPS63138634A ELECTRON BEAM EXCITED ION IRRADIATOR 失效
公开(公告)号：JPS63138634A
公开(公告)日：1988-06-10
申请号：JP28392486
申请日：1986-11-28
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： H01J27/20 , H01J37/08
摘要： PURPOSE:To make ion energy controllable, by keeping the electric potential of an ion irradiated body to floating potential, in case of a device which draws an ion beam out of the plasma excited by an electron beam and irradiates it to a sample. CONSTITUTION:Plasma is generated in a plasma area 5 by discharge between a cathode 1 and an accelerating cathode 2, while an electron constituting this plasma is pulled by an accelerating anode 3 and rushes into an ion formation area 7, forming an ion there. A part of this ion is pulled by the accelerating cathode 2, pulling down a negative potential barrier to be formed in and around an opening of the accelerating cathode 2, and an electron flow of the current value proportioned to plasma density inside the plasma area 5 flows into the ion formation area 7. At this ion formation area 7, ions proportionate to the number of inflow electrons are formed there, and the energy of these ions is controlled by the potential of the sample 18 installed on a sample setup part 4 and irradiated to the sample 18. With this constitution, an ion current being irradiated is controllable.

70. 发明专利

JPS62234857A ELECTRON BEAM SOURCE 失效
公开(公告)号：JPS62234857A
公开(公告)日：1987-10-15
申请号：JP7846386
申请日：1986-04-04
申请人： RIKAGAKU KENKYUSHO , TOKYO ELECTRON LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , IMAHASHI KAZUNARI
IPC分类号： H01J37/06 , H01J3/02
摘要： PURPOSE:To obtain the source of an electron beam with a substantially large bore, by forming an anode with a plurality of electrode element and controlling the flow of each electric current between those elements and a cathode. CONSTITUTION:A cathode C is connected to the negative pole of a discharge power supply Vd. And its multi-splitted anode, namely electrode elements A1...An are connected to the discharge power supply Vd via respective resistances R1...Rn. Therefore, the ratios of discharge currents flowing through the electrode elements A1...An ca!l be decided, if values of resistances R1...Rn can be set to respective proper values. The source of an electric beam with a large bore can be obtained, in this way, because the values of respective currents flowing between a plurality of anode elements A1...An and the cathod C can be controlled.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式