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    • 70. 发明专利
    • PLASMA CHEMICAL VAPOR DEPOSITION METHOD
    • JPS62103371A
    • 1987-05-13
    • JP24149085
    • 1985-10-30
    • HITACHI LTD
    • NIHEI MASAYASUCHIKAZAKI MITSUOSUWA MASATERUTAMAHASHI KUNIHIROISHIKAWA NORITOSHI
    • C23C16/50C23C16/515
    • PURPOSE:To form a laminar film, composite film and alloy film and to obtain a composite effect having optional characteristics by changing supply electric power impulsively, etc. thereby depositing films having different characteristics. CONSTITUTION:A continuous high-frequency signal is supplied from a high-frequency oscillator 14 to an initial stage high-frequency amplifier 9 and the signal programmed in a setting circuit is compared and amplified with the detection signal from a power detector 7 by a differential amplifier 10 in order to convert the above-mentioned signal to the impulsive low-frequency power or the high-frequency changing with time. The differential signal is supplied to the amplifier 9 which drives a high-frequency power amplifier 8 so as to obtain always the set power. The high-frequency is supplied via a matching circuit 2 to electrodes 4, 5 to generate glow discharge. More specifically, the peak power is changed periodically or with time to change the reaction and cracking of the gaseous raw material by plasma, by which the films having the different characteristics are successively deposited and the laminar film, composite film and alloy film are formed.