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61. 发明专利

JPS57154840A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57154840A
公开(公告)日：1982-09-24
申请号：JP3938481
申请日：1981-03-20
申请人： HITACHI LTD
发明人： YOKOYAMA TAKASHI , IKEDA TAKAE
IPC分类号： H01L21/312 , H01L23/29 , H01L23/31
摘要： PURPOSE:To inhibit the increase of leakage currents by compounding the metallic salt of an organic acid containing no halogen compound when using a condensation type silicon rubber containing no alkali metallic impurity. CONSTITUTION:The exposed surface of the P-N junction section J of a semiconductor element is coated with silicon resin 4. A mixture consisting of (a) organopolysiloxane having hydroxyl groups, (b) diorganopolysiloxane, one molecule thereof has at least three or more alkoxy groups, and (c) the metallic salt of the organic acid containing the halogen compound substantially is used as the resin 4 at that time. Accordingly, the increase of leakage currents is inhibited even when the device is exposed at a high temperature.

62. 发明专利

JPS5780746A Resin-coated semiconductor device 失效
标题翻译：树脂涂层半导体器件
公开(公告)号：JPS5780746A
公开(公告)日：1982-05-20
申请号：JP15598380
申请日：1980-11-07
申请人： Hitachi Ltd
发明人： MISAWA YUTAKA , TAKAHASHI MASAAKI , YOKOYAMA TAKASHI , IKEDA TAKAE
IPC分类号： H01L23/29 , H01L23/31
CPC分类号： H01L23/296 , H01L23/3171 , H01L23/3192 , H01L2924/0002 , H01L2924/00
摘要： PURPOSE:To obtain sufficient withstand voltage by forming a layer of Si resin containing filler or reinforcing member on an Si resin containing no filler. CONSTITUTION:A semiconductor substrate 20 has a pair of main surfaces 201, 202 disposed at opposite side to each other, a side end face 203 communicating between both main surfaces, and 4 continuous layers of pE, nS, pB, nE formed on the main surface. A layer 23 of additional Si resin containing no filler or reinforcing member is formed on the side face 203, and a layer 24 of additional Si resin containing filler or reinforcing member is formed on the layer 23. The Si resin containing filler is remarkably affected by the influence of the moisture, and the reinforcing agent is remarkably affected by lthe influence of temperature and electric field. Therefore, two layers of the layers 23, 24 are covered and the charge is not thus varied by the moisture, temperatre and electric field, and hence desired withstand voltage characteristic can be obtained.
摘要翻译：目的：通过在不含填料的Si树脂上形成含有硅树脂的填料或增强材料层来获得足够的耐压。构成：半导体衬底20具有彼此相对设置的一对主表面201,202，在两个主表面之间连通的侧端面203和形成在主体上的4个连续的pE，nS，pB，nE层表面。在侧面203上形成不含填料或增强部件的附加Si树脂层23，在层23上形成含有填料或增强部件的附加Si树脂层24，含有Si树脂的填料受到湿度和增强剂的影响受温度和电场的影响的显着影响。因此，层23,24的两层被覆盖，并且电荷不因湿度，温度和电场而变化，因此可以获得期望的耐受电压特性。

63. 发明专利

JPS56161645A SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS56161645A
公开(公告)日：1981-12-12
申请号：JP6392980
申请日：1980-05-16
申请人： HITACHI LTD
发明人： IKEDA TAKAE , YOKOYAMA TAKASHI , SUZUKI HIROSHI
IPC分类号： H01L21/312 , H01L29/74
摘要： PURPOSE:To attain the high reliability by reducing changes of a leak current of the element by a method wherein the total amount of Na and K contained is restrained under 0.5ppm in silicon rubber used as a surface stabilizing member at an exposed part of a P-N junction. CONSTITUTION:For example, in a thyristor fitted to a supported electrode 5 through a solder layer 3, and exposed p-n junction surface J is covered with a silicon rubber material 4 and treated for stabilizing the surface. The silicon rubber is applied with a physical-chemical treatments such as distillation, recrystallization, washing and ion-exchange in advance at the stage of manufacturing process to be kept purified in high purity. Restraining the total amount of the Na and K contained in the silicon rubber below 0.5ppm is ascertained to be effective for decreasing and stabilizing the leak current as a result of a temperature cycle test on said thyristor. Thus, the exposed p-n junction surface can be stabilized and the element can be made high reliability.

64. 发明专利

JPS5570052A METHOD OF STABILIZING SURFACE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5570052A
公开(公告)日：1980-05-27
申请号：JP14337478
申请日：1978-11-22
申请人： HITACHI LTD
发明人： YOKOYAMA TAKASHI , SUZUKI HIROSHI , MUKAI JIYUNJI , IKEDA TAKAE
IPC分类号： C08L83/00 , C08K5/57 , C08L83/04 , H01L23/29 , H01L23/31
摘要： PURPOSE:To improve the insulating property of a semiconductor device by coating composition having diorganopolysiloxane, organosilane and organic tin compound on a pn-junction exposed portion, hardening it in the presence of water content and heating it to thereby reduce leaked current. CONSTITUTION:A composition having diorganopolysiloxane having hydroxyl group at the end of a molecular chain, organosilane having alkoxy group and organic tin compound is coated on a pn-junction exposed portion of a semiconductor device, hardened in the presence of water content, and heated to form a surface stabilizing film thereon. The organic tin compound includes (benzyloxy)tri-n-butyl tin or the like represented by general formula of RmSn(OR1)4-m, where R, R1 signify methyl, ethyl, propyl, butyl, amyl, phenyl or benzyl group, and m signifies 2 or 3. Since preferable surface stabilizing film can be obtained without oxide treatment thereby, it can reduce the leaked current of diode or thyristor and improve the insulating property thereof.

65. 发明专利

JPS5451479A SURFACE STABILIZING METHOD FOR SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS5451479A
公开(公告)日：1979-04-23
申请号：JP11691577
申请日：1977-09-30
申请人： HITACHI LTD
发明人： YOKOYAMA TAKASHI , SUZUKI HIROSHI , YAO TSUTOMU , KOJIMA ISAO
IPC分类号： H01L21/312 , H01L21/324
摘要： PURPOSE:To reduce the leakage curent by stablizing the surface of the semiconductor element, through the use of constituent consisting of diorganopolysiloxane having hydroxyl group at the end of molecule chain, organosilane having at least two alkoxy groups and organic metal ester compound. CONSTITUTION:R is methyl, ethyl or phenyl group, and diorganopolysiloxane shown in the generic equation (I) taking n as 50 to 500, and R' and R'' are methyl or ethyl group, and the constituent of organic metal ester compound such as organosilane, dibuthyl tin diacetate and dibuthyl diuralate shown in the generic equation (II) taking n as O to 1 is used. The amount of preparation is made less than 100, 1 to 5 and 2 respectively and this is coated on the exposed surface of PN junction of element. After that, hardening is made under the presence of moisture, and heat treatment of 40 to 250 deg.C under inactive gas atomosphere not including moisture and oxygen is made to this. It is important that no moisture and included under inactive gas atomosphere.

66. 发明专利

JPS5451478A SURFACE STABILIZATION METHOD FOR SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPS5451478A
公开(公告)日：1979-04-23
申请号：JP11691277
申请日：1977-09-30
申请人： HITACHI LTD
发明人： YOKOYAMA TAKASHI , SUZUKI HIROSHI , YOSHIDA TOMIO
IPC分类号： H01L23/29 , H01L21/312 , H01L21/324 , H01L23/31
摘要： PURPOSE:To reduce the leakage current, by protecting the semiconductor element surface through the use of constituent consisting of diorganopolysiloxane having hydroxyl group at the end of molecule chain, organosilane having at least two alkoxy groups and organic tin ester compound. CONSTITUTION:R is methyl, ethyl and phenyl group, and the diorganopolysiloxane shown in the generic equation (I) by taking n as 50 to 500, and R', R'' are methyl or ethyl group, and the organic tin ester compound such as organosilane, dibuythyl tin diacetate, dibuthyl tindiuralate shown is generic equation (II) is used. They are constituted respectively with 100, 1 to 5, 0.01 to 0.1 wt.% and after they are coated on the exposing part of PN junction of element, they are hardened under the presence of moisture. Next, they are heated to 40 to 150 deg.C under inactive gas atmosphere not including moisture and oxygen. It is important to reduce the amount of organic tin ester compound than 0.2 to 2 wt.% normally.

67. 发明专利

JPS5357300A EPOXY RESIN COMPOSITION 失效
公开(公告)号：JPS5357300A
公开(公告)日：1978-05-24
申请号：JP13245476
申请日：1976-11-05
申请人： HITACHI LTD
发明人： YOKOYAMA TAKASHI , MIYADERA YASUO
IPC分类号： C08G59/00 , C08G59/40 , C08G59/50
摘要： PURPOSE:To prepare a low-temperature curable epoxy resin composition of high grass transition temperature, having a long pot-life, by incorporating an epoxy resin with an organic acid anhydride curing agent and a catalyst such as quinoline, quinaldine, etc.

68. 发明专利

JPS5330697A CURING OF COMPOSITIONS 失效
公开(公告)号：JPS5330697A
公开(公告)日：1978-03-23
申请号：JP10425476
申请日：1976-09-02
申请人： HITACHI LTD
发明人： MIYATERA YASUO , YOKOYAMA TAKASHI , SUGAWARA YASUHIDE , SUZUKI HIROSHI , NUMATA SHIYUNICHI , YOKONO ATARU
IPC分类号： C08G18/00 , C08G18/16 , C08G18/58
摘要： PURPOSE:To form a polymer capable of giving cured articles having excellent heat resistance, flame retardancy, free from developing cracks or foams, by curing a composition comprising a polyfunctional epoxy compound, a polyfunctional isocyanate compound and a heterocycle forming catalyst stepwise.

69. 发明专利

JPS52155974A FIXING METHOD OF SEMICONDUCTOR ELEMENT TO FILM CARRIER 失效
公开(公告)号：JPS52155974A
公开(公告)日：1977-12-24
申请号：JP7217376
申请日：1976-06-21
申请人： HITACHI LTD
发明人： YOKOYAMA TAKASHI , MIYATERA YASUO , SUGAWARA YASUHIDE , OKAMURA SHIMUYA
IPC分类号： H01L21/66 , H01L21/50
摘要： PURPOSE:To use polyamide acid based varnish on a polyimide based resin film, use power of alumina, etc. as a filler in securing elements and reduce leakage current.

70. 发明专利

JPS51117874A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JPS51117874A
公开(公告)日：1976-10-16
申请号：JP4232775
申请日：1975-04-09
申请人： HITACHI LTD
发明人： MIYATERA YASUO , SHICHIUMI KEN , SUGAWARA YASUHIDE , YOKOYAMA TAKASHI , YAMAMOTO MASAYUKI
IPC分类号： H01L29/73 , H01L21/312 , H01L21/331 , H01L29/08 , H01L29/861
摘要： PURPOSE:By having at least junction sections of semiconductor devices with polyimidesulfon resins including organosilane compound, resistivity to heat, shock and humidity is improved.

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