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61. 发明专利

JPH0299954A PHOTORESIST COMPOSITION 失效
公开(公告)号：JPH0299954A
公开(公告)日：1990-04-11
申请号：JP25250288
申请日：1988-10-06
申请人： FUJITSU LTD
发明人： SHIBA SHOJI , SAITO KAZUMASA , WATABE KEIJI
IPC分类号： G03F7/039 , C08L83/04 , G03F7/075 , H01L21/027
摘要： PURPOSE:To obtain the positive type resist having excellent sensitivity and definition by using a resist consisting of a specific silicone compd. and a photosensitive agent which generates an acid by irradiation of UV rays as the upper layer resist of a two-layered structure. CONSTITUTION:The resist consisting of the silicone compd. which has a silyl ether bond and is expressed by the formula I and the photosensitive agent which generate the acid by irradiation of UV rays is used as the upper layer resist of the two-layered structure. The ether bond of the silicone compd. having the silyl ether bond is cut and the main chain thereof is decomposed if the acid exists therein and the silicone compd. exhibits high O2 plasma resistance even in such a case. In the formula I, R1 to R4 denote 1 to 4C alkyl group; R5 to R6 denote a hydrogen atom, 1 to 4C alkyl group, trimethyl group; n denotes 10 to 10000 positive integer. The resist patterns having the excellent oxygen plasma resistance, the high sensitivity and the high definition are formed in this way.

62. 发明专利

JPH0266550A X RAY RESIST 失效
公开(公告)号：JPH0266550A
公开(公告)日：1990-03-06
申请号：JP21877388
申请日：1988-09-01
申请人： FUJITSU LTD
发明人： NAMIKI TAKAHISA , SAITO KAZUMASA , SHIBA SHOJI , WATABE KEIJI
IPC分类号： G03F7/075 , G03F7/20 , H01L21/027
摘要： PURPOSE:To improve the sensitivity against X rays and the definition of the subject resist by composing the resist of a copolymer having specified recurring units different with each other. CONSTITUTION:The resist is composed of the copolymer having the recurring unit shown by formula I and the recurring unit shown by formula II. In formula I, R is alkyl group substd. at least one or more of hydrogen atoms with halogen atoms or alkoxy group, etc. By introducing the recurring unit of an org. compd. contg. halogen atom in a vinyl bond as shown by formula I, the sensitivity of the resist against the X rays is improved, and the introducing the recurring unit which is shown by formula II and contains a phenol structure, in the vinyl bond, the alkali development of the resist is enabled. Thus, the sensitivity against the X rays of the resist is improved, and the swelling of a resist pattern is suppressed, and the definition of the resist is made easy.

63. 发明专利

JPH0235455A RESIST MATERIAL AND PATTERN FORMING METHOD 失效
公开(公告)号：JPH0235455A
公开(公告)日：1990-02-06
申请号：JP18745188
申请日：1988-07-26
申请人： FUJITSU LTD
发明人： KAWASAKI YOKO , SAITO KAZUMASA , SHIBA SHOJI , WATABE KEIJI , YONEDA YASUHIRO
IPC分类号： G03F7/012 , G03F7/075
摘要： PURPOSE:To enhance sensitivity to (i) rays and resistance to reactive oxygen ion etching by using a combination of a specified ladder type silicone resin and a specified photosensitive agent. CONSTITUTION:The resist material comprises the silicone resin (A) represented by formula I in which each of R1 and R2 is vinyl, allyl, or (meth)acryloyl, and n is 10-1,000, and embodied by silylated polyvinylsilsesquioxane and the like; and 7,7,8,8-tetracyanoquinodimethane; and an azido compound (B) capable of absorbing lights near the (i) rays, such as 2,6-bis-(4-azidobenzal)-4- methylcyclohexanone. And these materials are preferably used as the upper resist of the double construction.

64. 发明专利

JPH01229243A NEGATIVE TYPE RESIST COMPOSITION 失效
公开(公告)号：JPH01229243A
公开(公告)日：1989-09-12
申请号：JP5363388
申请日：1988-03-09
申请人： FUJITSU LTD
发明人： KAWASAKI YOKO , SAITO KAZUMASA , SHIBA SHOJI , WATABE KEIJI
IPC分类号： G03F7/038 , G03F7/075
摘要： PURPOSE:To enhance the definition of fine patterns by an upper layer by using specific alternate copolymers for an upper layer resist. CONSTITUTION:The compsn. essentially consisting of the polymer obtd. by the alternate copolymerization of the silicone compd. expressed by formula I and the 7,7,8,8-tetracyanoquinodimethane expressed by formula II is used for the upper layer material of the resist having a two-layered structure. The polymer having a high silicone content is thereby obtd. and the resistance of the resist to oxygen plasma is improved. Since the control of the molecular weight. and dispersion degree is easy, the compsn. having the excellent sensitiv ity and definition is obtd. In formula, R1 denotes a direct bond, alkylene, etc.; R2, R3 denote alkylene, phenylene; R4 denotes alkyl, phenyl; (n) denotes an integer.

65. 发明专利

JPS63279245A NEGATIVE RESIST COMPOSITION 失效
公开(公告)号：JPS63279245A
公开(公告)日：1988-11-16
申请号：JP11360587
申请日：1987-05-12
申请人： FUJITSU LTD
发明人： SHIBA SHOJI , SAITO KAZUMASA , FUKUYAMA SHUNICHI , KAWASAKI YOKO , WATABE KEIJI
IPC分类号： G03F7/075
摘要： PURPOSE:To increase sensitivity of a compsn. for deep UV light by using a specified ladder type silicone resin and a specified photosensitive material. CONSTITUTION:The compsn. of this invention is constituted of a silicone resin expressed by the formula and benzophenone or 2,2-dimethoxy-2-phenyl acetophenone. In the formula, R is a vinyl, allyl, acryloyl, or methacryloyl group; n is 10-1,000. Concrete examples for the above described resin are silylated polyvinyl silsesquioxane, etc. When the compsn. is used as an upper layer resist in a two layered resist, the sensitivity for deep UV light (e.g. light having 248nm wavelength), is increased, and formation of a submicropattern is possible.

66. 发明专利

JPS63152673A HEAT-RESISTANT RESIN COMPOSITION 失效
公开(公告)号：JPS63152673A
公开(公告)日：1988-06-25
申请号：JP30045286
申请日：1986-12-16
申请人： FUJITSU LTD
发明人： SHIBA SHOJI , FUKUYAMA SHUNICHI , SAITO KAZUMASA , KAWASAKI YOKO , WATABE KEIJI
IPC分类号： H01L21/312 , C08G77/60 , C08L83/16 , C09D183/00 , H01L21/768 , H01L23/522 , H05K3/28
摘要： PURPOSE:To provide the titled composition by coating a polysilmethylene on a base plate including difference in level developed by wiring pattern formation, drying followed by thermosetting leading to formation of an electrical insulating layer outstanding in voltage resistance along with removal of said difference in level. CONSTITUTION:Polysilmethyl as a heat-resistant resin is coated on a base plate including difference in level developed by wiring pattern formation, being dried followed by thermosetting treatment pref. at 350-450 deg.C to form an electrical insulating layer along with removal of said difference in level on the base plate, thus obtaining the objective composition.

67. 发明专利

JP2012174926A Semiconductor device, manufacturing method of the same and power supply device 有权
标题翻译：半导体器件及其制造方法及电源装置
公开(公告)号：JP2012174926A
公开(公告)日：2012-09-10
申请号：JP2011036254
申请日：2011-02-22
申请人： Fujitsu Ltd , 富士通株式会社
发明人： SHIMIZU KOZO , OKAMOTO KEISHIRO , IMAIZUMI NOBUHIRO , IMADA TADAHIRO , WATABE KEIJI
IPC分类号： H01L21/52 , H01L21/338 , H01L29/778 , H01L29/812
CPC分类号： H01L23/48 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/04026 , H01L2224/05005 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05541 , H01L2224/05573 , H01L2224/05644 , H01L2224/0603 , H01L2224/26175 , H01L2224/2745 , H01L2224/2746 , H01L2224/29019 , H01L2224/29036 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/2912 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/2919 , H01L2224/2929 , H01L2224/29339 , H01L2224/29499 , H01L2224/32225 , H01L2224/32245 , H01L2224/325 , H01L2224/32502 , H01L2224/32506 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48245 , H01L2224/48247 , H01L2224/48644 , H01L2224/48744 , H01L2224/4903 , H01L2224/73265 , H01L2224/83193 , H01L2224/83194 , H01L2224/83801 , H01L2224/83851 , H01L2924/00013 , H01L2924/01029 , H01L2924/01322 , H01L2924/13064 , H01L2924/15311 , H01L2924/181 , H01L2224/83439 , H01L2924/00014 , H01L2924/00012 , H01L2924/0132 , H01L2924/01047 , H01L2924/0105 , H01L2924/0665 , H01L2224/13099 , H01L2224/13599 , H01L2224/05599 , H01L2224/05099 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To inhibit displacement of a semiconductor chip such as shifting and rotation when the semiconductor chip is mounted on a support plate such as a circuit board and a stage of a lead frame.SOLUTION: A semiconductor device manufacturing method includes the steps of: forming one of a layer 5 containing a fist metal and a layer 6 containing a second metal on one of a semiconductor chip mounting region 2A on a support plate 2 and a rear face of a semiconductor chip 1; forming the other of the layer containing the first metal and the layer containing the second metal in a region corresponding to a part of the region on which the one of the layer containing the first metal and the layer containing the second metal is formed, on the other of the semiconductor mounting region and the rear face of the semiconductor chip; aligning the semiconductor chip on the semiconductor chip mounting region; forming a layer 9 containing an alloy containing the first metal and the second metal; and bonding the semiconductor chip to the semiconductor chip mounting region.
摘要翻译：要解决的问题：当半导体芯片安装在诸如电路板的支撑板和引线框架的台架上时，抑制半导体芯片的位移，例如移位和旋转。解决方案：半导体器件制造方法包括以下步骤：在支撑板2上的半导体芯片安装区域2A和后部之一上形成包含第一金属的层5和含有第二金属的层6中的一个半导体芯片1的面; 在与包含第一金属和含有第二金属的层的一个区域形成的区域的一部分相对应的区域中形成含有第一金属和含有第二金属的层的另一层，在半导体安装区域和半导体芯片的背面中的另一个; 将半导体芯片对准半导体芯片安装区域; 形成含有含有第一金属和第二金属的合金的层9; 并将半导体芯片接合到半导体芯片安装区域。版权所有（C）2012，JPO＆INPIT

68. 发明专利

JP2012089677A Semiconductor device and manufacturing method for semiconductor device 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：JP2012089677A
公开(公告)日：2012-05-10
申请号：JP2010234961
申请日：2010-10-19
申请人： Fujitsu Ltd , 富士通株式会社
发明人： OZAKI SHIRO , KANEMURA MASAHITO , NAKAMURA TETSUKAZU , MIYAJIMA TOYOO , TAKEDA MASAYUKI , WATABE KEIJI , YOSHIKAWA SHUNEI , IMANISHI KENJI , TAGI TOSHIHIRO , IMADA TADAHIRO
IPC分类号： H01L21/338 , H01L21/205 , H01L21/316 , H01L29/778 , H01L29/78 , H01L29/786 , H01L29/812
CPC分类号： H01L29/517 , H01L21/0228 , H01L23/291 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/518 , H01L29/66462 , H01L29/7786 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To prevent drop of dielectric voltage in a structure where a protection film is formed on an insulation film.SOLUTION: A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode formed on the second semiconductor layer, an insulation film formed on the second semiconductor layer, a gate electrode formed on the insulation film, and a protection film formed covering the insulation film. The protection film is formed by any of thermal CVD, thermal ALD, and vacuum evaporation.
摘要翻译：要解决的问题：为了防止在绝缘膜上形成保护膜的结构中的介电电压下降。解决方案：半导体器件包括形成在衬底上的第一半导体层，形成在第一半导体层上的第二半导体层，形成在第二半导体层上的源电极和漏电极，形成在第二半导体层上的绝缘膜半导体层，形成在绝缘膜上的栅极电极以及覆盖该绝缘膜的保护膜。保护膜由热CVD，热ALD和真空蒸发中的任何一种形成。版权所有（C）2012，JPO＆INPIT

69. 发明专利

JP2011053691A Negative resist composition, method for forming resist pattern, and method for fabricating semiconductor device 有权
标题翻译：负极性组合物，形成耐蚀图案的方法和制造半导体器件的方法
公开(公告)号：JP2011053691A
公开(公告)日：2011-03-17
申请号：JP2010206036
申请日：2010-09-14
申请人： Fujitsu Ltd , 富士通株式会社
发明人： NOZAKI KOJI , YANO EI , OZAWA YOSHIKAZU , WATABE KEIJI
IPC分类号： G03F7/075 , C08G77/14 , G03F7/038 , G03F7/09 , G03F7/38 , H01L21/027
CPC分类号： B82Y30/00 , B82Y10/00 , G03F7/038 , G03F7/0382 , G03F7/0757 , G03F7/094 , G03F7/38
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which can be developed with a basic aqueous solution and can form a fine pattern without swelling while having practicable sensitivity. SOLUTION: The negative resist composition containing an alkaline-soluble resin as a base material includes, as a compound including an oxetane structure in the structure, a silicon-containing polymer represented by formula (5), wherein n is a positive integer. COPYRIGHT: (C)2011,JPO&INPIT

70. 发明专利

JP2007026587A Magnetic recording medium, head slider, and magnetic recording device 有权
标题翻译：磁记录介质，头滑块和磁记录装置
公开(公告)号：JP2007026587A
公开(公告)日：2007-02-01
申请号：JP2005209782
申请日：2005-07-20
申请人： Fujitsu Ltd , 富士通株式会社
发明人： CHIBA HIROSHI , WATABE KEIJI , KASAMATSU YOSHIHARU , MUSASHI TAKAYUKI , NAKAMURA TETSUKAZU
IPC分类号： G11B5/725 , G11B5/60 , G11B5/72
摘要： PROBLEM TO BE SOLVED: To obtain a magnetic recording medium and a head slider exhibiting excellent corrosion resistance even if a protective layer has small thickness.
SOLUTION: In a protective layer used in a magnetic recording medium or a head slider, a resin film is stacked on the protective layer such that it is substantially in a chemical bond with the protective layer; thickness of the protective layer is not more than 3 nm, and total thickness of the protective layer of the magnetic recording medium and the resin film is not more than 5 nm; and surface tension of the resin film is not more than 40 mN/m, and lower than the critical surface tension of the protective layer.
COPYRIGHT: (C)2007,JPO&INPIT

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