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    • 53. 发明专利
    • Semiconductor device and manufacturing method therefor
    • 半导体器件及其制造方法
    • JP2006108167A
    • 2006-04-20
    • JP2004289081
    • 2004-09-30
    • Casio Comput Co Ltdカシオ計算機株式会社
    • WAKIZAKA SHINJI
    • H01L25/18H01L25/00H01L25/065H01L25/07
    • H01L2224/12105H01L2224/19H01L2224/24137H01L2224/24195H01L2224/32225H01L2224/73267H01L2224/92244H01L2924/01029H01L2924/014H01L2924/14H01L2924/00H01L2924/00012
    • PROBLEM TO BE SOLVED: To enable a semiconductor device provided with a silicon substrate having an integrated circuit and a thin film passive element to have versatility.
      SOLUTION: The semiconductor device is provided on a base board 1 with a silicon substrate 5 having an integrated circuit 6 on the upper surface thereof; a semiconductor construct 3 having a plurality of columnar electrodes 14 which are electrically connected to the integrated circuit 6, and provided on the silicon substrate 5; a silicon substrate 23 having a thin film resistor (thin film active element) 25 on the upper surface thereof; and a passive element construct 21 having a plurality of columnar electrodes 33 which are electrically connected to the thin film resistor 25, and provided on the silicon substrate 23. In this case, since the passive element construct 21 is independent from the semiconductor construct 3, the selection of the thin film passive element enables the semiconductor device to have versatility.
      COPYRIGHT: (C)2006,JPO&NCIPI
    • 要解决的问题:为了使具有集成电路和薄膜无源元件的硅衬底的半导体器件具有通用性。 解决方案:半导体器件设置在基板1上,硅基板5在其上表面上具有集成电路6; 具有与集成电路6电连接并设置在硅基板5上的多个柱状电极14的半导体构造体3; 在其上表面上具有薄膜电阻(薄膜有源元件)25的硅衬底23; 以及具有与薄膜电阻器25电连接并设置在硅基板23上的多个柱状电极33的无源元件构造21.在这种情况下,由于无源元件构造体21与半导体构造体3无关, 薄膜无源元件的选择使半导体器件具有通用性。 版权所有(C)2006,JPO&NCIPI