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    • 60. 发明专利
    • Mounting stand structure and plasma film forming device
    • 安装结构和等离子体膜形成装置
    • JP2010219354A
    • 2010-09-30
    • JP2009065236
    • 2009-03-17
    • Tokyo Electron Ltd東京エレクトロン株式会社
    • FUJISATO TOSHIAKIRONALD NASMAN
    • H01L21/683C23C14/50
    • H01L21/67109C23C14/50H01J37/34H01L21/68785
    • PROBLEM TO BE SOLVED: To provide a mounting stand structure which is put in a high-vacuum state by sufficiently performing degassing treatment in a treatment container, and has endurance for high temperature. SOLUTION: A mounting stand structure 32 for mounting a work W in order to form a thin film containing metal with respect to the work is provided with: a ceramic mounting stand 38 with an electrode 34 for chucking and a heater 36 embedded inside; a metallic flange 100 connected to the lower surface of a circumferential part of the mounting stand; a metallic base 42 which is joined with the flange by screws 126 and also has cooling passages 40 inside for allowing a cooling medium to flow; and a metallic sealing member 130 held between the flange and the base. COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种通过在处理容器中充分进行脱气处理而处于高真空状态的安装架结构,并且具有耐高温性。

      解决方案:用于安装工件W以形成相对于工件的金属薄膜的安装架结构32设置有:具有嵌入的电极34的陶瓷安装架38和嵌入在内部的加热器36 ; 连接到安装台的周向部分的下表面的金属法兰100; 金属底座42,其通过螺钉126与凸缘接合,并且还具有内部的冷却通道40,用于允许冷却介质流动; 以及保持在凸缘和基座之间的金属密封构件130。 版权所有(C)2010,JPO&INPIT