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51. 发明专利

JP2008150239A Method for producing group iii nitride-based compound semiconductor crystal 有权
标题翻译：用于生产III族氮化物化合物半导体晶体的方法
公开(公告)号：JP2008150239A
公开(公告)日：2008-07-03
申请号：JP2006339056
申请日：2006-12-15
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B9/00 , H01L21/208
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： PROBLEM TO BE SOLVED: To easily, inexpensively produce a high-quality bulky semiconductor crystal by crystal growth treatment based on a flux method.
SOLUTION: A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) on the basis of the flux method in a nitrogen (N
2 ) atmosphere at 3.7 MPa and 870°C employing a flux mixture including Ga, Na and Li at about 870°C. Since the back surface of a template 10 is the R-plane of a sapphire substrate 11, the template is ready to be dissolved or corroded in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from its back surface resulting in separation or disappearance. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the whole of sapphire substrate 11 is dissolved in the flux mixture while maintaining the temperature of a crucible at 850 to 880°C.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过基于通量法的晶体生长处理，能够容易地廉价地制造高质量的大体积的半导体晶体。解决方案：基于氮气（N 2 ）气氛中的通量法，在晶种（GaN层13）的晶体生长表面上生长GaN单晶20 在约870℃下使用包含Ga，Na和Li的助熔剂混合物在870℃和870℃。由于模板10的后表面是蓝宝石衬底11的R平面，所以模板准备好从其后表面溶解或腐蚀到焊剂混合物中。因此，模板10从其背面逐渐溶解或腐蚀，导致分离或消失。当GaN单晶20生长到足够的厚度，例如约500μm以上时，将整个蓝宝石基板11溶解在助熔剂混合物中，同时将坩埚的温度保持在850〜880℃。版权所有（C）2008，JPO＆INPIT

52. 发明专利

JP2008010543A Manufacturing method for group iii nitride compound semiconductor 有权
标题翻译： III类氮化物半导体的制造方法
公开(公告)号：JP2008010543A
公开(公告)日：2008-01-17
申请号：JP2006177864
申请日：2006-06-28
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： YAMAZAKI SHIRO
IPC分类号： H01L21/205 , C23C16/34 , C23C16/455 , C30B25/14 , C30B29/38
摘要： PROBLEM TO BE SOLVED: To adjust an off-angle α from an R face of a sapphire substrate and a V/III ratio ρ as epitaxial growth conditions for a group III nitride compound semiconductor. SOLUTION: When epitaxially growing the group III nitride compound semiconductor on the sapphire substrate, the epitaxial growth is performed by alternately setting the V/III ratio between a supply amount of group V elements and that of group III elements, at ρ 1 smaller than a proper value and at ρ 2 larger than the proper value. When the epitaxial growth is performed only with the V/III ratio set to ρ 1 smaller than the proper value, discontinuity in a c-axis direction (a non-smooth part of a recessed part or the like extended in an m-axis direction) appears on the surface (5. A-5. D) due to the occurrence of m-axis orientation growth in an A face of an epitaxial film. When the epitaxial growth is performed only with the V/III ratio ρ set to ρ 2 larger than the proper value, discontinuity in the m-axis direction (a non-smooth part of a recessed part or the like extended in the c-axis direction) appears on the surface (5. E-5. H) due to the occurrence of c-axis orientation growth in the A face of the epitaxial film. Therefore, it is required to alternately switch the V/III ratio between ρ 1 and ρ 2 . COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：将蓝宝石衬底的R面的偏角α和作为III族氮化物半导体的外延生长条件的V / III比ρ调整。解决方案：当在蓝宝石衬底上外延生长III族氮化物化合物半导体时，通过交替地将V族元素的供给量与III族元素的供给量之间的V / III比交替设定， SB> 1 小于适当值，并且ρ 2 大于适当值。当仅将V / III比设定为小于适当值的ρ 1 进行外延生长时，c轴方向（凹部等的非平滑部分）由于在外延膜的A面中出现m轴取向生长，所以在表面（5.A-5.D）上出现在m轴方向上延伸）。当外延生长仅以比正确值大的ρ/ SB> 2 的V / III比ρ进行时，m轴方向的不连续性（凹部的非平滑部分或由于在外延膜的A面中发生c轴取向生长，所以在表面（5.E-5·H）上出现了像c轴方向延伸的那样的形状）。因此，需要交替地切换ρ 1 和ρ 2 之间的V / III比。版权所有（C）2008，JPO＆INPIT

53. 发明专利

JP2007277058A Method and apparatus for manufacturing group iii nitride compound semiconductor 有权
标题翻译：制备III类氮化物半导体的方法和装置
公开(公告)号：JP2007277058A
公开(公告)日：2007-10-25
申请号：JP2006106860
申请日：2006-04-07
申请人： Ngk Insulators Ltd , Osaka Univ , Toyoda Gosei Co Ltd , 国立大学法人大阪大学 , 日本碍子株式会社 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , IWAI MAKOTO , SHIMODAIRA TAKANAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B9/00
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： PROBLEM TO BE SOLVED: To satisfactorily heat a raw material nitrogen gas in an Na-Ga flux method. SOLUTION: An openable and closable double-airtight vessel comprising a reaction vessel 100 and an outer vessel 200, both of which are adaptable to high-temperature high-pressure conditions, is used. The reaction vessel 100 is heated by heating units 31a, 31b and 31c that are placed inside the outer vessel. A nitrogen feed pipe 10 and an exhaust pipe 11 are connected to the reaction vessel 100, and feeding and exhaust of nitrogen are performed while adjusting the pressure inside the reaction vessel 100 to e.g. 100 atm by a control device, not illustrated. Here, when the nitrogen fed from the nitrogen feed pipe 10 passes through a heated part 10a that spirally proceeds around the periphery of the reaction vessel 100, it passes through it slowly enough to be heated to a temperature comparable to that of the reaction vessel 100 by the heating units 31a, 31b and 31c. This enables sufficient heating of the nitrogen before it is fed to the Na/Ga flux surface inside the reaction vessel 100. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：以Na-Ga通量法令人满意地加热原料氮气。
解决方案：使用可开闭的双重密闭容器，其包括可应用于高温高压条件的反应容器100和外容器200。反应容器100被放置在外容器内部的加热单元31a，31b和31c加热。氮气供给管10和排气管11连接到反应容器100，并且在将反应容器100内的压力调节到例如氮气的同时进行氮的供给和排出。 100大气压通过控制装置，未示出。这里，当从氮气进料管10供给的氮气通过螺旋地在反应容器100的周边周围进行的加热部分10a时，其缓慢地通过，加热到与反应容器100相当的温度通过加热单元31a，31b和31c。这样就可以在将氮气供给到反应容器100内的Na / Ga通量表面之前进行充分的加热。（C）2008，JPO＆INPIT

54. 发明专利

JP2007234918A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2007234918A
公开(公告)日：2007-09-13
申请号：JP2006055786
申请日：2006-03-02
申请人： Toyoda Gosei Co Ltd , 豊田合成株式会社
发明人： YAMAZAKI SHIRO
IPC分类号： H01L33/10 , H01L33/32 , H01L33/42 , H01L33/50 , H01L33/62
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element which achieves white light emission without using phosphor powder or phosphor paint. SOLUTION: In a GaN substrate 100, the light output surface 103 side is doped with Si having a concentration of 1×10 19 /cm 3 to form a yellow region emitter 101, and the epitaxial growth surface side is doped with Si and Zn both having a concentration of 1×10 19 /cm 3 to form a blue region emitter 102. An ultraviolet emitter region is formed on the blue region emitter 102, comprising n-type contact layer 104 made of an Si-doped GaN of about 8.0 μm in thickness, a distortion relaxation layer 105 made of an In 0.03 Ga 0.97 N, an emission layer 106 having a multiple quantum well (MQW) structure of a lamination for 20 periods and made of a non-doped GaN of 20 nm in thickness and a non-doped In 0.07 Ga 0.93 N of 3 nm in thickness, a p-type layer 107 made of an Mg-doped Al 0.08 Ga 0.92 N, and a p-type contact layer 108 made of an Mg-doped GaN. A group of layers from the n-type contact layer 104 to the p-type contact layer 108 compose a UV-ray emission portion. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种在不使用荧光体粉末或磷光体涂料的情况下实现白光发射的半导体发光元件。解决方案：在GaN衬底100中，光输出表面103侧掺杂浓度为1×10 19 / cm 3 / SP>的Si，以形成黄色区域发射极101，并且外延生长表面侧掺杂浓度为1×10 14 / SP / cm 3 / SP 3的Si和Zn，以形成蓝色区域发射极102。紫外发射极区域形成在蓝色区域发射极102上，包括厚度为约8.0μm的由Si掺杂的GaN制成的n型接触层104，由In 0.03 ≤0.37N / N，由Mg掺杂的Al 0.08 0.92的p型层107 N，以及由Mg掺杂的GaN制成的p型接触层108。从n型接触层104到p型接触层108的一组层组成紫外线发射部分。版权所有（C）2007，JPO＆INPIT

55. 发明专利

JP2005057196A Manufacturing method of group iii nitride compound semiconductor substrate 有权
标题翻译： III类氮化物半导体基板的制造方法
公开(公告)号：JP2005057196A
公开(公告)日：2005-03-03
申请号：JP2003289042
申请日：2003-08-07
申请人： Toyoda Gosei Co Ltd , Toyota Central Res & Dev Lab Inc , 株式会社豊田中央研究所 , 豊田合成株式会社
发明人： NAGAI SEIJI , KOJIMA AKIRA , YAMAZAKI SHIRO , UBUKAWA MITSUHISA , TOMITA KAZUYOSHI
IPC分类号： H01L21/205 , H01L31/10 , H01L33/32 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride compound semiconductor substrate by which quality such as crystal quality, warping and surface flatness and(or) productivity of the group III nitride compound semiconductor substrate are improved. SOLUTION: In an epitaxial growth system 101, a halide vapor-phase epitaxy is performed with a face 10a of a template 10 as a first crystal growth surface, and on a parallel with it and simultaneously, in an etching system 102 a nitrogen (N 2 ) gas is continuously sprayed on a face 10b (rear face of a silicon substrate A) of the template 10 at a rate of 2slm. This prevents a phenomenon of a nitride film generated on the face 10b through reaction of ammonia and silicon. After that, at a stage where a GaN layer 3 is crystallized and grown up to about 10-30 μm, a feed gas from the etching system 102 is switched to hydrogen chloride (HCI) where hydrogen (H 2 ) that is an etching gas is a carrier gas, from nitrogen (N 2 ) that is a nitriding prevention gas. Then, etching is favorably and nearly uniformly performed, for there is no barriers such as nitrided film. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题：提供III族氮化物化合物半导体衬底的制造方法，通过该III族氮化物化合物半导体衬底的质量如晶体质量，翘曲和表面平坦度以及（或）III族氮化物化合物半导体衬底的（或）生产率得到改善。解决方案：在外延生长系统101中，用模板10的面10a作为第一晶体生长表面进行卤化物气相外延，并且与蚀刻系统102a 氮气（N SB 2）气体以2slm的速率连续喷射在模板10的表面10b（硅衬底A的背面）上。这防止了通过氨和硅的反应在面10b上产生的氮化物膜的现象。之后，在GaN层3结晶并生长至约10-30μm的阶段，将来自蚀刻系统102的进料气体切换为氯化氢（HCl），其中氢气（H 2 ）是来自作为氮化防止气体的氮（N 2 ）的载气。然后，由于没有诸如氮化膜的障碍，蚀刻有利地并且几乎均匀地进行。版权所有（C）2005，JPO＆NCIPI

56. 发明专利

JP2003309287A Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：JP2003309287A
公开(公告)日：2003-10-31
申请号：JP2003133807
申请日：2003-05-12
申请人： Isamu Akasaki , Hiroshi Amano , Japan Science & Technology Corp , Toyoda Gosei Co Ltd , 浩天野 , 科学技術振興事業団 , 豊田合成株式会社 , 勇赤崎
发明人： KOIDE NORIKATSU , SHIBATA NAOKI , YAMAZAKI SHIRO , UMEZAKI JUNICHI , SASA MICHINARI , KOIKE MASAYOSHI , AKASAKI ISAMU , AMANO HIROSHI
IPC分类号： H01L33/12 , H01L33/32 , H01L33/42 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve the light emission retrieving efficiency of a light-emitting element, in a gallium nitride semiconductor light emitting element. SOLUTION: The light-retrieving side of the gallium nitride semiconductor light-emitting element 300 is set as an upper part electrode side. Accordingly, an upper part electrode is formed of a transparent ITO film 33, and an Al electrode 7 is provided as a contact in part contact. Thus, a light output is not wasted, and the efficiency of the emission of light can be improved. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：为了提高氮化镓半导体发光元件中的发光元件的发光检索效率。解决方案：将氮化镓半导体发光元件300的光回收侧设定为上部电极侧。因此，上部电极由透明ITO膜33形成，并且Al电极7被设置为部分接触的触点。因此，不会浪费光输出，能够提高发光效率。版权所有（C）2004，JPO

57. 发明专利

JP2003303996A Light-emitting element and method for manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：JP2003303996A
公开(公告)日：2003-10-24
申请号：JP2003133806
申请日：2003-05-12
申请人： Isamu Akasaki , Hiroshi Amano , Japan Science & Technology Corp , Toyoda Gosei Co Ltd , 浩天野 , 科学技術振興事業団 , 豊田合成株式会社 , 勇赤崎
发明人： KOIDE NORIKATSU , SHIBATA NAOKI , YAMAZAKI SHIRO , UMEZAKI JUNICHI , SASA MICHINARI , KOIKE MASAYOSHI , AKASAKI ISAMU , AMANO HIROSHI
IPC分类号： H01L33/10 , H01L33/30 , H01L33/42 , H01L33/44 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To improve the light emission extraction efficiency of a light-emitting element in a gallium nitride-based semiconductor light-emitting element. SOLUTION: This gallium nitride-based light-emitting element 100 is provided with a antireflection layer (or a reflecting layer for reflecting light) whose light-transmitting efficiency is made most satisfactory. Also, attenuation of lights radiated to the light radiation side, due to reflection can be suppressed, by an antireflection layer 10, (or lights radiated to the opposite side of the light-extracting side are radiated in a target direction in the reflecting layer). Thus, the lights of the light-emitting element can be more prevented from radiating in surplus directions, and the waste of output can be further prevented, and the light-emitting efficiency can be more improved than in the conventional manner. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提高氮化镓系半导体发光元件中的发光元件的发光提取效率。解决方案：该氮化镓系发光元件100具有光透射效率最令人满意的抗反射层（或反射光反射层）。此外，通过抗反射层10（或者在光反射层的相对侧照射的光在反射层中的目标方向上被照射）也可以抑制由于反射而辐射到光辐射侧的光的衰减，。因此，可以更多地防止发光元件的光在多个方向上辐射，并且可以进一步防止输出的浪费，并且可以比常规方式更好地提高发光效率。版权所有（C）2004，JPO

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