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51. 发明专利

JP2004107377A Polymer and positive type resist material and method for forming pattern using the same 有权
公开(公告)号：JP2004107377A
公开(公告)日：2004-04-08
申请号：JP2002268258
申请日：2002-09-13
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI
IPC分类号： G03F7/039 , C08F210/02 , C08F232/08 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive type resist material having high sensitivity and high resolution, exposure margin and process adaptability exceeding those of a conventional positive type resist material and a good pattern shape after exposure, especially high irradiation resistance and transparency for a light source at a short wavelength such as vacuum ultraviolet light and further exhibiting excellent etching resistance. SOLUTION: A polymer has a repeating unit represented by general formula (1) and a weight-average molecular weight within the range of 1,000-500,000. The positive type resist material is characterized by compounding the polymer as a base resin. COPYRIGHT: (C)2004,JPO

52. 发明专利

JP2004067975A Polymeric compound, resist material and method for forming pattern 有权
公开(公告)号：JP2004067975A
公开(公告)日：2004-03-04
申请号：JP2002233194
申请日：2002-08-09
申请人： Central Glass Co Ltd , Matsushita Electric Ind Co Ltd , Shin Etsu Chem Co Ltd , セントラル硝子株式会社 , 信越化学工業株式会社 , 松下電器産業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , KAWAI YOSHIO , SASAKO MASARU , ENDO MASATAKA , KISHIMURA SHINJI , MAEDA KAZUHIKO , OTANI MITSUTAKA , KOMORIYA HARUHIKO
IPC分类号： C08F28/02 , C08F212/14 , C08F220/12 , C08F232/00 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： C08F28/02 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To obtain a polymeric compound useful as a base polymer for a resist material suitable for a fine processing technology, especially chemically amplifying resist material, a resist material, and to provide a method for forming a pattern. SOLUTION: The polymeric compound contains a recurring unit expressed by formulae (1-1) or (1-2) [wherein, R 1 to R 3 are each H, F, an alkyl or a fluorinated alkyl; R 4 is a single bond, an alkylene or a fluorinated alkylene; R 5 is a single bond, an alkylene or a fluorinated alkylene; R 6 is a single bond, an alkylene or a fluorinated alkylene; R 7 is H or an acid-labile group; R 8 is a fluorinated alkyl; (a) is 1 or 2; (b) is 0-4 integer; (c) is 0-4 integer; and 1≤a+b+c≤4] and has 1,000-500,000 weight average molecular weight. The resist material is provided by having improved transparency, close adhesion and developing liquid permeability of the resist, at the same time capable of becoming a resist material having an excellent plasma etching resistance, easily forming patterns and suitable as the fine pattern-forming material for producing a super LSI (large scale integration). COPYRIGHT: (C)2004,JPO

53. 发明专利

JP2013080103A Resist protective film material and pattern formation method 有权
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：JP2013080103A
公开(公告)日：2013-05-02
申请号：JP2011219950
申请日：2011-10-04
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SUGA YUKI , HASEGAWA KOJI , HARADA YUJI
IPC分类号： G03F7/11 , C08F20/26 , G03F7/38 , H01L21/027
CPC分类号： G03F7/11 , C08K5/04 , G03F7/0046 , G03F7/2041 , C08L33/14
摘要： PROBLEM TO BE SOLVED: To provide a resist protective film material, a resist protective film material for immersion lithography in particular, that is excellent in water repellency and water slip performance, causes few development defects, and achieves a favorable resist pattern after development, and a pattern formation method using the material.SOLUTION: There is provided a resist protective film material containing a (meth)acrylate unit having a hexafluorohydroxypropylcarbonyloxy group at a side-chain terminal and comprising a polymer compound having a weight average molecular weight in the range of 1,000-500,000. The resist protective film material has high water repellency and high water slip performances. It has therefore good barrier performance to water, resulting in suppression of elution of a resist component in water and few development defects to realize immersion lithography allowing a good resist pattern shape after development.
摘要翻译：要解决的问题：为了提供抗蚀保护膜材料，特别是用于浸渍光刻的抗蚀保护膜材料，具有优异的防水性和防水性能，导致很少的显影缺陷，并且在得到良好的抗蚀剂图案之后开发，以及使用该材料的图案形成方法。解决方案：提供在侧链末端含有具有六氟羟丙基羰基氧基的（甲基）丙烯酸酯单元并且包含重均分子量在1,000-500,000范围内的高分子化合物的抗蚀保护膜材料。抗蚀保护膜材料具有高拒水性和高水滑性能。因此，对水具有良好的阻隔性能，抑制抗蚀剂成分在水中的洗脱，并且几乎没有显影缺陷实现浸渍光刻，从而在显影后具有良好的抗蚀剂图案形状。版权所有（C）2013，JPO＆INPIT

54. 发明专利

JP2013073019A Resist protective film material and pattern formation method 有权
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：JP2013073019A
公开(公告)日：2013-04-22
申请号：JP2011211979
申请日：2011-09-28
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： SUGA YUKI , SAGEHASHI MASAYOSHI , HARADA YUJI
IPC分类号： G03F7/11 , C08F20/28 , G03F7/38 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist protective film material that has high water-repellent and highly water-sliding properties, causes few development defect,and achieves a satisfactory resist pattern after development, a resist protective film material for immersion lithography in particular, and a pattern formation method using the material.SOLUTION: The resist protective film material contains a polymer compound comprising a repeat unit represented by the general formula (1) and having weight-average molecular weight between 1,000 and 500,000. (In the formula, Rto Rrepresent a fluorinated monovalent hydrocarbon group.) The present invention provides a resist protective film material having a repeat unit containing a highly water-repellent and highly water-sliding fluorine-containing cyclic acetal.
摘要翻译：解决问题：提供具有高拒水性和高水滑性的抗蚀保护膜材料，导致很少的显影缺陷，并且在显影后获得令人满意的抗蚀剂图案，用于浸渍光刻的抗蚀保护膜材料特别是使用该材料的图案形成方法。抗蚀剂保护膜材料含有包含由通式（1）表示的重复单元并且具有1,000至500,000的重均分子量的聚合物化合物。（在该式中，R 4 至R 6 表示氟化一价烃基。）本发明提供一种抗蚀剂保护膜具有重复单元的材料，该重复单元含有高度疏水且高度水滑动的含氟环状缩醛。版权所有（C）2013，JPO＆INPIT

55. 发明专利

JP2013057836A Pattern forming method and resist composition 有权
标题翻译：图案形成方法和阻力组成
公开(公告)号：JP2013057836A
公开(公告)日：2013-03-28
申请号：JP2011196667
申请日：2011-09-09
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： KOBAYASHI TOMOHIRO , HATAKEYAMA JUN , IIO TADASHI , SUGA YUKI , HASEGAWA KOJI , HARADA YUJI
IPC分类号： G03F7/039 , C08F20/10 , G03F7/004 , G03F7/038 , G03F7/32 , H01L21/027
CPC分类号： G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/325
摘要： PROBLEM TO BE SOLVED: To provide a pattern using a resist composition that exhibits a receding contact angle large enough for immersion exposure even with no protective film, achieves high resolution in development with an organic solvent, and that has high durability against pattern collapse.SOLUTION: The resist composition comprises a polymeric compound containing a repeating unit having a structure of a hydroxyl group protected with an acid labile group, a photo-acid generator, an organic solvent, and a polymeric additive containing a repeating unit having a fluorine atom and containing no hydroxyl group, in which the content of the polymeric additive is 1 to 30 mass% with respect to the content of the whole polymeric compound. A method for forming a negative pattern is provided, including the steps of: applying the above resist composition on a substrate and heat treating to form a resist film; then exposing the resist film to a high-energy beam; heat treating after the exposure; and selectively dissolving an unexposed part of the resist film by use of a developing solution containing an organic solvent. The inventive resist composition exhibits a receding contact angle large enough for immersion exposure, and in combination with negative development with an organic solvent, exhibits high resolution and a wide range of focus depth for a fine trench pattern or a hole pattern, enhances perpendicularity of a line pattern side wall and improves durability against pattern collapse.
摘要翻译：要解决的问题：为了提供使用抗蚀剂组合物的图案，即使没有保护膜也能够显示足够大的浸没曝光的后退接触角，可以用有机溶剂显影出高分辨率，并且对图案具有高耐久性坍方。解决方案：抗蚀剂组合物包含含有具有由酸不稳定基团保护的羟基结构的重复单元的聚合物，光酸产生剂，有机溶剂和含有重复单元的聚合物添加剂，所述重复单元具有氟原子并且不含羟基，其中聚合物添加剂的含量相对于整个高分子化合物的含量为1〜30质量％。提供一种形成负型图案的方法，包括以下步骤：将上述抗蚀剂组合物涂覆在基材上并进行热处理以形成抗蚀膜; 然后将抗蚀剂膜暴露于高能束; 暴露后进行热处理; 并通过使用含有有机溶剂的显影液选择性地溶解抗蚀剂膜的未曝光部分。本发明的抗蚀剂组合物表现出足够大的浸没曝光的后退接触角，并且与有机溶剂的负显影相结合，对于细沟槽图案或孔图案显示高分辨率和宽范围的聚焦深度，增强了垂直度线图案侧壁，并提高对图案塌陷的耐久性。版权所有（C）2013，JPO＆INPIT

56. 发明专利

JP2012128067A Resist material and pattern forming method 有权
标题翻译：耐材料和图案形成方法
公开(公告)号：JP2012128067A
公开(公告)日：2012-07-05
申请号：JP2010277875
申请日：2010-12-14
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HASEGAWA KOJI , SASAMI TAKESHI , HARADA YUJI , MORISAWA TAKUMI
IPC分类号： G03F7/004 , C08F20/26 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0046 , G03F7/0395 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a resist material that prevents a pattern profile from changing due to leaching out of the resist film.SOLUTION: A resist material comprises: (A) a polymer compound having a fluorinated partial structure having a specified structure in a side chain; (B) a polymer compound as a base resin, which has a skeleton derived from a lactone ring and/or a skeleton having a hydroxyl group and/or a skeleton derived from maleic acid anhydride, and which can dissolve in an alkali developing solution by an action of an acid; (C) a compound generating an acid upon exposure to a high energy beam; and (D) an organic solvent. Since a resist film formed by using the resist material has good barrier property against water, leaching out of the resist film in water is suppressed and a change of pattern profile due to leaching out is reduced.
摘要翻译：要解决的问题：提供防止由于浸出抗蚀剂膜而引起的图案轮廓变化的抗蚀剂材料。抗蚀剂材料包括：（A）具有在侧链中具有特定结构的氟化部分结构的聚合物化合物; （B）作为基础树脂的高分子化合物，其具有源自内酯环的骨架和/或具有羟基的骨架和/或由马来酸酐衍生的骨架的骨架，其能够溶解在碱性显影液中酸的作用（C）暴露于高能量束时产生酸的化合物; 和（D）有机溶剂。由于通过使用抗蚀剂材料形成的抗蚀剂膜对水具有良好的阻隔性，因此抑制了在水中的抗蚀剂膜的浸出，并且由于浸出而导致的图案形状的变化降低。版权所有（C）2012，JPO＆INPIT

57. 发明专利

JP2009276363A Resist material and pattern-forming method 有权
标题翻译：耐材料和图案形成方法
公开(公告)号：JP2009276363A
公开(公告)日：2009-11-26
申请号：JP2008124476
申请日：2008-05-12
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HARADA YUJI , HATAKEYAMA JUN , MAEDA KAZUNORI , HASEGAWA KOJI , SHINAJI SATOSHI
IPC分类号： G03F7/039 , C08F220/10 , G03F7/004 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041 , Y10S430/106 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a resist material which is excellent in water repellency and water slipping property and hardly causes defects in development, and also provide an additive polymer which is essential to attain the performance of the resist material and a pattern-forming method using the material. SOLUTION: The resist material contains a polymer compound (PA) which is composed of repetition units represented by general formulas (1a), (1b), (2a) and (2b). COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种抗拒水性和滑脱性优异的抗蚀剂材料，并且几乎不引起显影缺陷，并且还提供了获得抗蚀剂材料的性能和图案所必需的添加剂聚合物使用材料的成型方法。解决方案：抗蚀剂材料包含由通式（1a），（1b），（2a）和（2b）表示的重复单元组成的高分子化合物（PA）。版权所有（C）2010，JPO＆INPIT

58. 发明专利

JP2009098638A Resist composition and patterning process 有权
标题翻译：耐腐蚀组合物和方法
公开(公告)号：JP2009098638A
公开(公告)日：2009-05-07
申请号：JP2008225761
申请日：2008-09-03
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HASEGAWA KOJI , WATANABE TAKESHI , HARADA YUJI
IPC分类号： G03F7/004 , C08F220/28 , C08F232/00 , G03F7/038 , G03F7/039 , G03F7/38 , H01L21/027
CPC分类号： G03F7/0382 , G03F7/0046 , G03F7/0392 , G03F7/0395 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111 , Y10S430/143
摘要： PROBLEM TO BE SOLVED: To provide a resist composition preventing degradation of a pattern profile. SOLUTION: A resist composition comprises a polymer compound as base resin which improves or reduces its alkali solubility under the action of an acid, and a polymer compound as an additive copolymer comprising recurring units (a) and (b) of the general formula (1). A resist film formed by using this resist composition has good barrier property against water, so that leaching of the resist film with water is suppressed and a change of pattern profile due to leach-out is reduced. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供防止图案轮廓劣化的抗蚀剂组合物。解决方案：抗蚀剂组合物包含作为基础树脂的聚合物化合物，其在酸的作用下改善或降低其碱溶解性，以及作为添加剂共聚物的高分子化合物，其包含一般的重复单元（a）和（b）公式1）。通过使用该抗蚀剂组合物形成的抗蚀剂膜对水具有良好的阻隔性，从而抑制了用水浸渍抗蚀剂膜，并且由于浸出而导致的图案形状的变化降低。版权所有（C）2009，JPO＆INPIT

59. 发明专利

JP2007316448A Resist protective film material and pattern forming method 有权
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：JP2007316448A
公开(公告)日：2007-12-06
申请号：JP2006147408
申请日：2006-05-26
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI
IPC分类号： G03F7/11 , C08F220/10 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist protective film material with which even when a protective film is formed on a photoresist film, a resist pattern having good rectangularity can be obtained more reliably. SOLUTION: The resist protective film material for forming a protective film on a photoresist film contains at least a high molecular compound containing a repeating unit having one or more of an amino group represented by formula (1) and a sulfonamide group. COPYRIGHT: (C)2008,JPO&INPIT

60. 发明专利

JP2007140446A Resist protective film material and pattern forming method 有权
标题翻译：耐腐蚀膜材料和图案形成方法
公开(公告)号：JP2007140446A
公开(公告)日：2007-06-07
申请号：JP2006065836
申请日：2006-03-10
申请人： Shin Etsu Chem Co Ltd , 信越化学工業株式会社
发明人： HATAKEYAMA JUN , HARADA YUJI , WATANABE TAKESHI
IPC分类号： G03F7/11 , C08F220/22 , H01L21/027
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a protective film material for liquid immersion lithography which allows good liquid immersion lithography, can be removed during development of a photoresist layer at the same time, and has excellent process applicability, and a pattern forming method using such a material. SOLUTION: The resist protective film material contains (i) a blend of a polymer which comprises a repeating unit having a fluorine-containing alkyl group or a fluorine-containing alkylene group containing one or more fluorine atoms and, optionally, an alkali-soluble repeating unit, and a polymer which comprises a repeating unit having a fluorine-atom-free alkyl group and, optionally, an alkali-soluble repeating unit, or (ii) a polymer which comprises a repeating unit having a fluorine-containing alkyl group or a fluorine-containing alkylene group containing one or more fluorine atoms, a repeating unit having a fluorine-atom-free alkyl group and, optionally, an alkali-soluble repeating unit. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供允许良好液浸光刻的液浸光刻用保护膜材料，可以同时在光致抗蚀剂层的显影期间除去，并且具有优异的工艺适用性和图案形成方法使用这样的材料。抗蚀剂保护膜材料包含（i）包含具有含氟烷基的重复单元或含有一个或多个氟原子的含氟亚烷基的聚合物的混合物，以及任选的碱可溶性重复单元，以及包含具有无氟原子的烷基的重复单元和任选的碱可溶性重复单元的聚合物，或（ii）包含具有含氟烷基的重复单元的聚合物基团或含有一个或多个氟原子的含氟亚烷基，具有无氟原子的烷基的重复单元和任选的碱溶性重复单元。版权所有（C）2007，JPO＆INPIT

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