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    • 60. 发明专利
    • Method for producing aluminum nitride single crystal
    • 用于生产氮化钠单晶的方法
    • JP2008044810A
    • 2008-02-28
    • JP2006221169
    • 2006-08-14
    • Sumitomo Metal Ind Ltd住友金属工業株式会社
    • KAMEI KAZUTOSHIRAI YOSHIHISAYANAI AKIHIRO
    • C30B29/38C01B21/072C30B19/04
    • PROBLEM TO BE SOLVED: To inexpensively and stably produce a high-quality bulk AlN single crystal used as a substrate by an LPE (Liquid Phase Epitaxy) method of a temperature gradient system.
      SOLUTION: In the method for producing the AlN single crystal, comprising growing the AlN single crystal on a seed crystal substrate for growing the AlN single crystal by bringing the seed crystal substrate into contact with the surface layer of a melt containing Al and N in an atmosphere composed of a nitrogen-containing gas, the temperature Tb of at least the surface layer of the melt is held at a temperature higher by 1 to 100 °C than the temperature Ta at which an AlN film is formed in the surface layer of the melt during growth of the AlN single crystal.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:通过温度梯度系统的LPE(液相外延)方法廉价且稳定地制造用作衬底的高质量体积AlN单晶。 解决方案:在制造AlN单晶的方法中,包括通过使晶种衬底与含有Al的熔体的表面层接触而在用于生长AlN单晶的晶种衬底上生长AlN单晶,以及 N在由含氮气体构成的气氛中,至少熔融物表层的温度Tb保持在比表面形成AlN膜的温度Ta高1〜100℃的温度 AlN单晶生长期间的熔体层。 版权所有(C)2008,JPO&INPIT