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51. 发明专利

JPH02213090A THIN FILM EL PANEL AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02213090A
公开(公告)日：1990-08-24
申请号：JP3310589
申请日：1989-02-13
申请人： SHARP KK
发明人： ENDO YOSHIHIRO , HIRAI MASAAKI , SHIMOYAMA HIROYUKI , KISHISHITA HIROSHI
IPC分类号： H05B33/10 , C23C14/34 , H05B33/12 , H05B33/26 , H05B33/28
摘要： PURPOSE:To restrain a brightness difference and obtain a thin film EL panel having high dielectric strength by controlling oxygen partial presure to apply low specific resistance with a large crystal grain size to an under ITO film and high specific resistance with a small crystal grain size to an upper ITO film respectively in forming a transparent electrode. CONSTITUTION:When an ITO film 2a is first made to grow on a glass substrate 1 under the O2 partial pressure of 5X10 to 1X10 Torr using a mixed gas of an ITO target Ar and O2 containing 5 to 10wt% of SnO2 in a sputter method. In this case, crystal growth becomes easy and a film having a large grain size and low specific resistance is obtained. Thereafter, when an ITO film 2b is overlaid under the O2 partial pressure of 3X10 to 5X10 Torr, it becomes difficult for the crystal to grow and there appears a film having a small grain size and high specific resistance. After an annealing process, the film is etched to a banded form and a transparent electrode 2 is thereby formed. SiO2 and Si3N4 are made to continuously grow with the sputter method for forming an under insulation layer 3. In addition, a luminous layer 4 of ZnS:Mn is deposited and annealed in vacuum for forming a lamination upper insulation layer of SiO2 and Si3N4. Al and Ni layers are laminated, and a rear electrode 6 and a terminal electrode 7 are added, thereby completing a manufacturing process.

52. 发明专利

JPH02213087A MANUFACTURE OF THIN FILM EL PANEL 失效
公开(公告)号：JPH02213087A
公开(公告)日：1990-08-24
申请号：JP3310689
申请日：1989-02-13
申请人： SHARP KK
发明人： HIRAI MASAAKI , SHIMOYAMA HIROYUKI , ENDO YOSHIHIRO , KISHISHITA HIROSHI
IPC分类号： H05B33/10 , H05B33/12 , H05B33/14
摘要： PURPOSE:To restrain a brightness difference within a display region by using an etching process for the removal of a luminous layer formed approximately all over via an under insulation film on a glass substrate while an upper insulation layer is used as a mask. CONSTITUTION:An ITO electrode film 2 is provided on a glass substrate 1 and an under insulation film 3 is coated on the predetermined region D1 of the substrate 1, using a mask 25. The substrate 1 with the surface thereof directed down is mounted on a holder 12 and heated up to the predetermined temperature level without any mask, thereby forming a luminous layer 4 of ZnS:Mn on the entire surface of the substrate 1. The mask 23 is a gain used and an upper insulation layer 5 having Si3N4 is formed on the region D1. Using the upper insulation layer 5 as a mask, an area other than the region D1 is etched with a 35% hydrochloric acid solution. In this case, the edge of an electrode 2 is exposed to the hydrochloric acid solution, but is not influenced because the etching process takes place at normal temperature. Finally, a metal film is formed with an electron beam deposition method, a photo etching process applies and a rear electrode 6 of strip shape and a terminal electrode 7 are formed, thereby ending all the processes. According to the aforesaid construction, a brightness difference is reduced and the display quality of a thin film EL panel is enhanced.

53. 发明专利

JPH01211927A MANUFACTURE OF THIN FILM ELEMENT 失效
公开(公告)号：JPH01211927A
公开(公告)日：1989-08-25
申请号：JP3725188
申请日：1988-02-18
申请人： SHARP KK
发明人： HIRAI MASAAKI , ENDO YOSHIHIRO , KISHISHITA HIROSHI , KAMIIDE HISASHI
IPC分类号： H05B33/10 , H01L21/306 , H01L31/0264 , H01L31/08
摘要： PURPOSE:To make it possible to mass-produce the title thin film element even when its base layer has a resisting property for either acid or alkali and that the degree of the resisting property for the chemical element other than the above is relatively low by a method wherein a film layer, consisting of the first layer to be etched by either an acid or an alkali and the second layer to be etched by the chemical element other than the above, are formed by patterning, the etching using one of the chemical element is conducted subsequent to the etching using the other chemical element. CONSTITUTION:For example, the first layer 71 consisting of aluminum and the like is formed by conducting a sputtering method, and also the second layer 72 consisting of nickel, titanium and the like is formed in the same manner as above. From the above-mentioned state, positive type photoresist 8 is coated on the second layer 72, and a pattern is formed. Then, the second layer 72 is etched using diluted nitric acid as an etchant when the layer 72 is nickel, and also using fluorine as an etchant when the layer 72 is titanium. Then, the first layer 71 is etched. As a result, the title thin film element can be mass- produced.

54. 发明专利

JPH01183091A MANUFACTURE OF TRANSMISSION TYPE THIN FILM EL ELEMENT 失效
公开(公告)号：JPH01183091A
公开(公告)日：1989-07-20
申请号：JP298988
申请日：1988-01-08
申请人： SHARP KK
发明人： ENDO YOSHIHIRO , INOHARA AKIO , KISHISHITA HIROSHI , KAMIIDE HISASHI
IPC分类号： H05B33/06 , G09F9/30 , H05B33/10 , H05B33/12 , H05B33/26 , H05B33/28
摘要： PURPOSE:To shorten a photo-etching process by continuously etching Al and Ni films, which cover the ends of the first transparent electrode and the extended portion of the second transparent electrode film, on the same resist film, and to prevent corrosion of the Al-Ni interface by using oxalic acid for etching of the second transparent electrode. CONSTITUTION:ITO stripes 12 are made on the BSG substrate 11, and an insulation film 13 which consists of SiO2 and Si3N4 is overlaid thereon. A luminous layer 14 is formed on the substrate by the electron beam vapor deposition method, and another insulation film which consists of Si3N4 and Al2O3 is overlaid thereon to form an ITO back plate 16. After that the laminated films 17a and 17b which consist of Al film and Ni film are formed at respective ends of electrodes 12 and 16. The striped resist pattern is made orthogonally to the stripes of electrode 12 thereon. Ni is etched with dilute nitric acid solution, Al is etched by a heated mixed solution of phosphoric acid and nitric acid, and ITO is etched by a heated oxalic acid solution. After the continuous etching, resist is peeled off for completion. With this method the reliability of the element improves, as the photo-etching process is shortened and the electrode terminals are not etched.

55. 发明专利

JPS6248358B2 失效
公开(公告)号：JPS6248358B2
公开(公告)日：1987-10-13
申请号：JP13392982
申请日：1982-07-30
申请人： SHARP KK
发明人： ENDO YOSHIHIRO , ISAKA KINICHI , KAWAGUCHI JUN , KISHISHITA HIROSHI , KAMIIDE HISASHI
IPC分类号： H05B33/10 , G09F9/30 , G09F9/33 , H05B33/06 , H05B33/12 , H05B33/22 , H05B33/26

56. 发明专利

JPS6213798B2 失效
公开(公告)号：JPS6213798B2
公开(公告)日：1987-03-28
申请号：JP1113881
申请日：1981-01-27
申请人： SHARP KK
发明人： MIZUKAMI ETSUO , KAWAGUCHI JUN , YAMASHITA YOSHITO , ENDO YOSHIHIRO , KISHISHITA HIROSHI , KAMIIDE HISASHI
IPC分类号： H05B33/10 , G09F9/30 , H05B33/04

57. 发明专利

JPS61237395A THIN FILM ELECTROLUMINESCENCE ELEMENT 失效
公开(公告)号：JPS61237395A
公开(公告)日：1986-10-22
申请号：JP7886385
申请日：1985-04-12
申请人： SHARP KK
发明人： ENDO YOSHIHIRO , OGAWA IKUO , KAWAGUCHI JUN , KISHISHITA HIROSHI , KAMIIDE HISASHI
IPC分类号： H05B33/10 , H05B33/12 , H05B33/22

58. 发明专利

JPS61224290A THIN FILM EL ELEMENT 失效
公开(公告)号：JPS61224290A
公开(公告)日：1986-10-04
申请号：JP6832585
申请日：1985-03-28
申请人： SHARP KK
发明人： YAMASHITA TAKURO , YOSHIDA MASARU , OGAWA IKUO , ENDO YOSHIHIRO
IPC分类号： H05B33/04

59. 发明专利

JPH08201854A REFLECTION-TYPE DISPLAY APPARATUS 失效
公开(公告)号：JPH08201854A
公开(公告)日：1996-08-09
申请号：JP750895
申请日：1995-01-20
申请人： SHARP KK
发明人： NOMURA TAKAO , YAMAGAMI TOMOJI , ENDO YOSHIHIRO
IPC分类号： G02F1/1335 , G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1365
摘要： PURPOSE: To select respectively optimum materials for reflecting plates and nonlinear resistance two terminal elements without increasing the number of masks by producing picture element electrodes from 2-1 first metal layer with high light reflectance and a second metal layer which has a function as an upper part electrodes of nonlinear resistance two terminal elements. CONSTITUTION: An insulating film layer 5 is formed on a semiconductor layer 4 and a through hole 2 is formed on the insulating film layer 5 in a scanning line 3. A picture element 1 is formed on the insulating film layer 5 between neighboring scanning lines 3 so as to cover the through hole 2. The picture element electrode 1 is H layered body consisting of two metal layers and the metal layer 7 in the upper side is made of a metal, e.g. Al, having high light reflectance and has a function as a reflecting plate. On the other hand, the metal layer 6 in the lower side is made of a metal, e.g. Ti, which makes the properties of nonlinear resistance two terminal elements optimum and has a function as an upper electrode of a nonlinear resistance two terminal element.

60. 发明专利

JPH06140155A MANUFACTURE OF THIN FILM EL ELEMENT 失效
公开(公告)号：JPH06140155A
公开(公告)日：1994-05-20
申请号：JP28875292
申请日：1992-10-27
申请人： SHARP KK
发明人： SHIMOYAMA HIROYUKI , NAKAMURA NORIAKI , ENDO YOSHIHIRO
IPC分类号： C23C14/30 , H05B33/10 , H05B33/12 , H05B33/14
摘要： PURPOSE:To improve the light emitting characteristic of a light emitting layer, and reduce the failure at evaporation by molding a light emitting layer material into pellets by heat compression, and evaporating them by electron beam evaporation to form the light emitting layer. CONSTITUTION:An activating material forming a light emitting central material such as Mn is mixed to a base material forming a light emitting layer such as ZnS in a fixed ratio to form a light emitting layer material 23. This material 23 is put in a high melting point vessel 22 in an atmospheric gas sealed vessel 25 in which Ar gas 28 is sealed, and sealed by a high melting point cap 24. The material 23 is solidified by the heating compression of adding a determined pressure P by a piston 28 and heating to a determined temperature by heaters 29-30, and molded into pellets. The thus-formed evaporating pellets are high in theoretical ratio relative density, so that the light emitting characteristic of the light emitting layer can be improved, and the failure of adhering the mass of the light emitting central material to a base can be reduced. The density of the pelleted evaporating raw material is preferably 3.28g/cm (theoretical ratio relative density: 80%) or more.

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