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    • 4. 发明专利
    • FORMATION OF ELECTRODE OF EL ELEMENT
    • JPH0233891A
    • 1990-02-05
    • JP18242988
    • 1988-07-20
    • SHARP KK
    • ENDO YOSHIHIROHIRAI MASAAKINAKAMURA NORIAKIKISHISHITA HIROSHIKAMIIDE HISASHI
    • H05B33/10H05B33/12H05B33/26
    • PURPOSE:To improve the close contact property of a back plate electrode and the reliability of an EL element by cleaning the surface, on which the back plate electrode of the EL element is to be formed, through discharge, then depositing a metal on the surface to form the electrode. CONSTITUTION:An EL element 15, consisting of a first and a second dielectric layers 4, 7, and a light emitting layer 5, etc., is mounted on a support member 18 in a vacuum deposition device 10. The air in the device 10 is exhausted by a vacuum pump 22 and nitrogen gas or the like is introduced therein and the pressure thereof is kept at 10 -10 Torr. Then, the element 15 is heated by a heater 16, and discharge is caused to occur between electrodes 11a, 11b by applying a commercial frequency voltage of several hundred volts. Thus, the nitrogen gas is activated and the attachment to the surface of the dielectric layer 7 is vaporized by reacting with the gas and is removed from the surface so that the surface of the dielectric layer 7 is cleaned. Then, the nitrogen gas is exhausted to achieve vacuum, and Al in a crucible 14 is molten and vaporized by an electron gun 23 and deposited on the surface of the dielectric layer 7. This is formed into a back plate electrode 8 by means of photoetching, etc.