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51. 发明专利

JPH07307314A METHOD OF ELIMINATING THIN FILM ON SUBSTRATE SURFACE BY USING PULSE LASER 失效
公开(公告)号：JPH07307314A
公开(公告)日：1995-11-21
申请号：JP12079694
申请日：1994-05-11
申请人： RIKAGAKU KENKYUSHO
发明人： RIKU EIFUU , AOYANAGI KATSUNOBU
IPC分类号： H05K3/08 , B23K26/00 , H01L21/268 , H01L21/302
摘要： PURPOSE:To shorten the elimination time of a substrate surface thin film, and use various elimination patterns, by irradiating only the region part position of the substrate surface thin film with pulse laser having a wavelength transparent to the substrate surface thin film and a wavelength to be absorbed and reflected by the substrate. CONSTITUTION:Only the region of a substrate surface thin film to be eliminated from the substrate surface is irradiated with pulse laser having a wavelength transparent to the substrate surface thin film and a wavelength to be absorbed and reflected by the substrate. That is, as the pulse laser, KrF excimer laser is adopted in excimer laser capable of forming pulse laser of short wavelength, e.g. 258nm. Further the following are installed; a beam homogenizer 12 which converts a pulse beam outputted from a KrF excimer laser oscillator 10 into a beam having uniform luminous intensity distribution, and a electrically driven aperture 14 capable of changing an aperture 14a which controls the size and the form of a pulse beam which is outputted from the beam homogenizer 12.

52. 发明专利

JPH07247199A PRODUCTION OF VISIBLE-LIGHT EMITTING SILICON AND PRODUCTION OF ELEMENT USING THE SAME 失效
公开(公告)号：JPH07247199A
公开(公告)日：1995-09-26
申请号：JP6573594
申请日：1994-03-09
申请人： RIKAGAKU KENKYUSHO
发明人： CHIYOU SHINI , KUSANO JUNICHI , AOYANAGI KATSUNOBU , SUGANO TAKUO
IPC分类号： C30B28/02 , C30B29/06 , H01L33/34 , H01L33/40 , H01L33/00
摘要： PURPOSE:To produce visible-light emitting silicon capable of emitting the visible light equal to that of porous silicon and readily carrying out the control on size such as film thickness or shape according to functions of an element. CONSTITUTION:This method for producing visible-light emitting silicon (visible- light emitting microcrystalline silicon) is to prepare amorphous silicon without containing hydrogen atom, crystallize the amorphous silicon, prepare an ultramicrocrystalline silicon, further immerse the ultramicrocrystalline silicon thus prepared in a mixture solution containing hydrofluoric acid while irradiating the solution with light and etch the ultramicrocrystalline silicon.

53. 发明专利

JPH0794296A GENERATING METHOD FOR PLASMA RECOMBINATION X-RAY LASER 失效
公开(公告)号：JPH0794296A
公开(公告)日：1995-04-07
申请号：JP23818593
申请日：1993-09-24
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , ANDO KOZO , AOYANAGI KATSUNOBU
IPC分类号： G21B1/00 , H05G2/00 , H05H1/24
摘要： PURPOSE:To efficiently generate a large amplification gain by decreasing intensity of a laser short pulse to an extent such that an electron temperature is not decreased until strong recombination is caused in polyvalent ions. CONSTITUTION:Laser light L of single pulse oscillated from a laser device is divided into two parts by a beam splitter 1, to straight advance the one beam, and the other beam is bent at a right angle, once projected into a prism 6 and returned onto the original optical path in a position of a beam splitter 2. Then, the laser light L is formed into two short pulse laser beams having a time delay corresponding to a difference between optical path lengths. Thereafter, the laser light L, similarly divided by reciprocation to prisms 7, 8 and by a splitter 5, is formed into 16 short pulse laser beams. Intensity of the laser short pulse in the rear part is decreased to a degree that an electron temperature is not decreased until strong recombination is caused by a polyvalent ion produced by the laser short pulse in the front part. Then, increasing volume of the polyvalent ions, optimizing plasma density and decreasing the electron temperature are simultaneously attained.

54. 发明专利

JPH06268255A POROUS SILICON AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH06268255A
公开(公告)日：1994-09-22
申请号：JP7769593
申请日：1993-03-11
申请人： RIKAGAKU KENKYUSHO
发明人： CHIYOU SHINI , KUSANO JUNICHI , AOYANAGI KATSUNOBU , SUGANO TAKUO
IPC分类号： C01B33/02 , C23F1/24 , C25D11/32 , C25F3/12 , H01L21/306 , H01L21/3063 , H01L33/34 , H01L33/00
摘要： PURPOSE:To provide a method of manufacturing porous silicon which is restrained from deteriorating in light emission capacity. CONSTITUTION:Dangling bonds on a porous silicon surface are terminated by hydrogen, oxygen, and clnlorine. Hydrochloric acid is added to forming liquid in a porous silicon manufacturing method wherein silicon is anodized in a liquid containing hydrofluoric acid.

55. 发明专利

JPH0626197B2 失效
公开(公告)号：JPH0626197B2
公开(公告)日：1994-04-06
申请号：JP20983187
申请日：1987-08-24
申请人： TOKYO EREKUTORON KK , RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU , YOSHINAGA TAKASHI , ARAKI YOICHI
IPC分类号： H01L21/302 , C03C1/00 , C03C23/00 , H01L21/3065

56. 发明专利

JPH0661507A METHOD FOR FORMING QUANTUM WIRE AND QUANTUM BOX 失效
公开(公告)号：JPH0661507A
公开(公告)日：1994-03-04
申请号：JP21000392
申请日：1992-08-06
申请人： RIKAGAKU KENKYUSHO
发明人： CHIYOU ZUIAN , AOYANAGI KATSUNOBU , SHIOKAWA TAKAO
IPC分类号： H01L21/20 , H01L21/265 , H01L29/06 , H01L29/80 , H01L29/804
摘要： PURPOSE:To form high-quality quantum wires and quantum boxes at high densities by making the method to contain a process for forming a mask having a prescribed pattern by selectively removing the part of a thin film formed on a substrate irradiated or nonirradiated with a particle beam by heating the substrate after irradiating the thin film with the particle beam in accordance with the prescribed pattern. CONSTITUTION:After forming a GaAlAs film 1 on a GaAs substrate by a CVD method, etc., a ZnSe film 2 is formed on the film 1 by a CVD method, etc. Then the film 2 is irradiated with an ion beam of Zn or Se ions in accordance with a prescribed pattern. After irradiation, a mask having the prescribed pattern is formed of the film 2 by selectively removing the film 2 by evaporating the part of the film 2 irradiated with the ion beam by heating the substrate. Then GaAs 3 is selectively grown through the mask. Thereafter, the film 2 is removed by evaporation by heating the substrate and a GaAlAs film 4 is again formed. The above-mentioned processes are repeated as required.

57. 发明专利

JPH05299193A 失效
公开(公告)号：JPH05299193A
公开(公告)日：1993-11-12
申请号：JP19920791
申请日：1991-08-08
申请人： RIKAGAKU KENKYUSHO , JEOL LTD
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , KUSAKABE KAZUTOSHI
IPC分类号： H05H1/00 , C23C14/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/24
摘要： PURPOSE:To provide a plasma generating device having extremely little ablation of a filament and a long life. CONSTITUTION:A needle valve 16 is gradually opened, and argon gas is introduced into a plasma generating device 9. A filament AC power source 26 is turned on, and the filament current If is gradually increased to the filament rated temperature. When a discharge power source 20 is turned on and the discharge voltage is applied, an electric discharge is started, and a discharge current Id flows. When the discharge current Id is increased, the sum of the filament heating current If and the discharge current Id/2 is detected by a detecting resistor 29 on the secondary side of a filament transformer, and this detection signal is fed to an error amplifier 30. The detected current value is compared with the rated current value by the error amplifier 30, a thyristor 31 is controlled based on the difference signal, and an increment of 1/2 of the discharge current Id is automatically subtracted from the heating current fed to a filament 10.

58. 发明专利

JPH0535537B2 失效
公开(公告)号：JPH0535537B2
公开(公告)日：1993-05-26
申请号：JP11508585
申请日：1985-05-28
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU , NANBA SUSUMU
IPC分类号： G21C5/04 , H01J27/20 , H01J37/08

59. 发明专利

JPH0467599A PRODUCING METHOD FOR POLYVALENT ION 失效
公开(公告)号：JPH0467599A
公开(公告)日：1992-03-03
申请号：JP17815190
申请日：1990-07-05
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , ANDO KOZO , AOYANAGI KATSUNOBU
IPC分类号： G21C1/00 , H01L21/027 , H01L21/30 , H01S3/036 , H01S3/097 , H01S4/00 , H05G2/00 , H05H1/24
摘要： PURPOSE:To produce polyvalent ions with high efficiency by means of a low- power-output exciting laser device by radiating subsequent laser short-pulses on top of a solid target surface sequentially before the electron temperature of the plasma produced by the preceding laser short-pulse reduces excessively low. CONSTITUTION:The valence of the ion included in a plasma generated by the first laser short-pulse colliding with a solid target is not large. But the plasma is gradually heated by the laser short-pulses incoming successively at substantially zero time interval so that the electron temperature rises up to a very high level to such an extent that polyvalence ions are produced. Subsequent pulses arrives to heat the plas-ma in steps before the density and electron temperature of a plasma produced by the preceding pulses reduces excessively low, so that the production of polyvalence ions is nonlinearly increased. Thus, polyvalent ions can be produced with high efficiency and moreover the irradiation intensity of the excited pulse laser light can be reduced.

60. 发明专利

JPH0458445A ELECTRON BEAM SOURCE 失效
公开(公告)号：JPH0458445A
公开(公告)日：1992-02-25
申请号：JP16625390
申请日：1990-06-25
申请人： RIKAGAKU KENKYUSHO
发明人： HARA TAMIO , HAMAGAKI MANABU , AOYANAGI KATSUNOBU
IPC分类号： H01J37/065 , H01J37/077 , H01J37/305 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To prevent sputtering due to ions of acceleration electrode for evading metal contamination in an acceleration region and an ion generation region by covering a surface of an acceleration cathode opposing to an acceleration anode with an insulator. CONSTITUTION:A surface of an acceleration cathode 2 facing to an acceleration cathode 4 is covered with an insulator 3. For the insulator 3, ceramics can be used in addition to a glass plate. Ions accelerated inside an acceleration region reach the whole surface of the acceleration cathode 2 so as to extinguish space charge due to electrons near the hole of an acceleration cathode 2 while in the other area, ions come to strike the insulator surface, however, ions have no such energy as to sputter an insulator. Accordingly, contamination of a plasma region due to sputtering and metal contamination of a semiconductor wafer can be avoided.

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