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51. 发明专利

JPH10107103A ELECTRONIC DEVICE INSPECTION SYSTEM 失效
公开(公告)号：JPH10107103A
公开(公告)日：1998-04-24
申请号：JP20880997
申请日：1997-08-04
申请人： HITACHI LTD
发明人： ISHIKAWA SEIJI , SAKATA MASAO , NAKAZATO JUN , SHIMOSHA SADAO , NAGATOMO HIROTO , TANIGUCHI YUZO , SATO OSAMU , OKABE TSUTOMU , SAKAMOTO YUZABURO , MURAMATSU KIMIO , MATSUOKA KAZUHIKO , HASHIMOTO TAIZO , OYAMA YUICHI , EBARA YUTAKA , MIYAZAKI ISAO , HANAJIMA SHUICHI
IPC分类号： G01R31/26 , G01N21/88 , G01N21/94 , G01N21/956 , G01R31/00 , H01L21/66
摘要： PROBLEM TO BE SOLVED: To enable the inspection result of an electronic device to be analytically processed with high efficiency, by a method wherein inspection data outputted from an inspection device are discontinuously transmitted to a processing device. SOLUTION: Works such as electronic devices are inspected by a first and a second inspection devices, 1, 4, and 7. Data obtained by inspecting works with the first inspection devices 1 and 4 are transmitted to first processing devices 2 and 5, and data obtained by inspecting works with the second inspection device 7 are transmitted to a second processing device 8. In an inspection system mentioned above, inspection data obtained by inspecting works with the inspection devices, 1, 4, and 7 are transmitted after the works are inspected. For instance, when the inspection of a lot of works is finished through a foreign object inspection device, foreign object control data and foreign object inspection data concerning the above lot of works are transmitted to a foreign object data analysis station 2. When the inspection of a wafer is finished through an appearance inspection device 4, appearance defect control data and appearance defect data are transmitted to an analysis station 5.

52. 发明专利

JPH09280007A TURBINE PROTECTION DEVICE 失效
公开(公告)号：JPH09280007A
公开(公告)日：1997-10-28
申请号：JP9079896
申请日：1996-04-12
申请人： HITACHI LTD , HITACHI ENG CO LTD
发明人： OKAYASU YOSHIHEI , SATO OSAMU , IKEDA HIROSHI
IPC分类号： F01D21/16
摘要： PROBLEM TO BE SOLVED: To minify possibility of unnecessary operation to the utmost so as to prevent unnecessary turbine trip from generating by transmitting a signal from a computer, exciting the quick closing solenoid valve of a low pressure bypass valve, and forcedly quickly closing the low pressure turbine so as to perform turbine trip. SOLUTION: For preventing an injury of a high pressure turbine due to what is called erroneous opening that a low pressure turbine bypass valve is opened during full closing 22 of a high pressure turbine bypass valve, output of a turbine and low pressure turbine bypass flow are inputted. When the low pressure turbine bypass flow is over the setting conformed to the bearing quantity of a high pressure turbine even in transition, a signal indicating erroneous opening of the low pressure turbine bypass valve is output from a computer 29. By the signal 25 from the computer 29, the low pressure turbine bypass valve is forcedly quickly closed so as to perform turbine trip. Hereby unnecessary trip of the turbine due to unnecessary operation of a protection device can be avoided to the utmost, by setting a function to be a very close value to a bearing quantity curve.

53. 发明专利

JPH09273659A BAKING DEVICE FOR VACUUM DEVICE 失效
公开(公告)号：JPH09273659A
公开(公告)日：1997-10-21
申请号：JP8122296
申请日：1996-04-03
申请人： HITACHI LTD
发明人： SATO OSAMU , KOBARI TOSHIAKI
IPC分类号： F16K51/02 , B01J3/00
摘要： PROBLEM TO BE SOLVED: To efficiently remove water sticking to equipment or the like, by providing a gas heating and supply device which heats gas and feed it to a vacuum vessel and an exhaust device which exhausts gas, and alternately repeating gas introduction to the vacuum vessel from the gas heating supply device and gas exhaust. SOLUTION: In the case of baking of a vacuum vessel 1, first by a turbomolecular pump 5, vacuum exhaust is perfumed, also a current is carried in a gas heating device 3, preheating is attained. Next, when a pressure of the vacuum vessel 1 is decreased to a prescribed value, the pump 5 is stopped, valves V1, V2 are opened, a leak valve V3 is gradually opened, heated nitrogen gas is introduced in the vacuum vessel 1. In the point of time the pressure rises in the vicinity of the atmosphere, valves V4, V5 and V3, V2 are successively closed, after inside the vacuum vessel 1 is kept in the atmospheric pressure for a while, an exhaust system is driven, nitrogen gas in the vacuum vessel 1 is exhausted. After this operation is repeated by several number of times, operation is switched to vacuum exhaust by a turbomolecular pump 11, baking is ended.

54. 发明专利

JPH0945675A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0945675A
公开(公告)日：1997-02-14
申请号：JP19134495
申请日：1995-07-27
申请人： HITACHI LTD
发明人： ASAKA KATSUYUKI , OKADA DAISUKE , SATO OSAMU
IPC分类号： H01L21/316 , H01L21/331 , H01L21/76 , H01L29/73 , H01L29/732
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device in which the drop in the breakdown strength between the collector and the emitter of an npn transistor is prevented by a method wherein a plurality of protrusion parts which are similar to a protrusion part at the end part of a field insulating film formed on a semiconductor wafer are formed at the inside of the field insulating film. SOLUTION: An n-type semiconductor region 2 is formed on the surface of a p-type semiconductor substrate 1, and an n-type semiconductor region 3 is formed at its upper part. Then, a silicon oxide film is formed on the surface of the n-type semiconductor region 3. After that, the pattern of a silicon nitride film 4 to be used as a mask film for surface oxidation in the formation of a field silicon oxide film as an insulating film for element isolation is formed. Then, while the silicon nitride film 4 is used as a mask, the n-type semiconductor region 3 whose surface has been exposed is etched, and a plurality of grooves 5 are formed at prescribed intervals. Then, while the silicon nitride film 4 is used as a mask, a field silicon oxide film 6 is formed on the surface of the n-type semiconductor region 3, and a plurality of protrusion parts which are similar to a protrusion part formed at the end part of the field silicon oxide film 6 are formed at the inside of the field oxide film 6.

55. 发明专利

JPH08293400A ABSORBER OF STORAGE RING 失效
公开(公告)号：JPH08293400A
公开(公告)日：1996-11-05
申请号：JP9925295
申请日：1995-04-25
申请人： HITACHI LTD
发明人： KOBARI TOSHIAKI , HIRANO NOBUO , SAEKI MITSURU , SATO OSAMU
IPC分类号： H05H13/04
摘要： PURPOSE: To achieve the long life of charged particles by decreasing outgas through a process of cooling the thermal input of radiating light at high efficiency, and also to constitute a beam duct having high reliability by decreasing the temperature load to a material. CONSTITUTION: A cooling water passage part of an absorber is constituted of a cooling water inlet part 16, a main heat transfer part 17 and a cooling water outlet part 18, supply of cooling water from the cooling water inlet part 16 to the main heat transfer part 17 is performed by injecting cooling water to a main heat transfer surface 12 by a linear nozzle 15, and the cooling water is allowed to the main heat transfer part 17 along the main heat transfer surface 12. Moreover, irregularities 30 are provided on the main heat transfer surface, the passivation processing is performed to the surface of the absorber to be brought in contact with the cooling water, or anti-corrosion materials are applied to the surface.

56. 发明专利

JPH08274113A MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH08274113A
公开(公告)日：1996-10-18
申请号：JP7855795
申请日：1995-04-04
申请人： HITACHI LTD
发明人： SATO OSAMU , OKADA DAISUKE , YATSUDA YUJI
IPC分类号： H01L29/73 , H01L21/306 , H01L21/331 , H01L29/732
摘要： PURPOSE: To improve manufacturing yield by suppressing the scattering in breakdown strength between a base region and an emitter region in a bipolar transistor in side wall base contact structure. CONSTITUTION: Silicon oxide film 7 which is 5-10nm is provided on the side surface of a first silicon nitride film 5 on an n-type epitaxial layer 3 where a base region is formed and determines the dimension of an emitter region, and the silicon oxide film 7 prevents the first silicon nitride film 5 from being etched when performing wet etching of a second silicon nitride film 9, thereby minimizing the dimension of the first silicon nitride film 5, namely the scattering in the dimension of an emitter region even if the first silicon nitride film 5 is etched in a later process.

57. 发明专利

JPH08187520A BEND-WORKING METHOD FOR PIPE 失效
公开(公告)号：JPH08187520A
公开(公告)日：1996-07-23
申请号：JP104095
申请日：1995-01-09
申请人： HITACHI LTD
发明人： SATO OSAMU , KOBARI TOSHIAKI
IPC分类号： B21D7/06
摘要： PURPOSE: To perform bend-working with high accuracy by putting a pips between rollers with three pairs or over of rotary shafts which are perpendicular in the longitudinal direction, and moving the rollers while sending the pipe in the longitudinal direction. CONSTITUTION: A pipe 4 is put between rollers 2a and 2b so that a movement in the radial direction is restricted, and the pipe 4 is sent in the longitudinal direction by a wire 7. The pipe 4 is bent by moving rollers 1a, 1b and 3a, 3b to attain a prescribed bending radius. Since the pipe 4 is bent while sending it in the longitudinal axial direction, working with a uniform bending radius is possible. By adjusting the position of a movable pulley 6, it is set so that a bending force to the pipe 4, which is caused by the tension of the wire 7, is not generated, and the tension of the wire 7 works always in the longitudinal axial direction of the pipe. To minimize an excess strain, a bending quantity per operation is made small, and bend-working is repeatedly performed. In this way, bend-working with high accuracy and the arbitrary radius of curvature can be performed.

58. 发明专利

JPH05223747A OBSERVING DEVICE FOR FOREIGN OBJECT 失效
公开(公告)号：JPH05223747A
公开(公告)日：1993-08-31
申请号：JP2779792
申请日：1992-02-14
申请人： HITACHI LTD
发明人： SATO OSAMU
IPC分类号： G01B11/30 , G01N21/84 , G01N21/88 , G01N21/93 , G01N21/94 , G01N21/956 , H01J37/22 , H01L21/66
摘要： PURPOSE:To enable even a minute foreign object to be retrieved easily and in a short time by means of a scanning electron microscope by judging the level of a size of the foreign object which is provided, dividing an observation region when the level of the foreign object is equal to or less than a certain value, and retrieving each divided region successively. CONSTITUTION:A wafer 1 which was measured is carried to an optical surface foreign object inspection device 2. A foreign object information 3 is controlled by a CPU 4 within the device 2. To enlarge and observe a minute foreign object, the wafer 1 is carried to a scan-type electronic microscope 5 for observation. For example, a screen 11 of the microscope 5 is divided into 25 parts (5X5 divisions) for observing each division, thus enabling magnification for observation to be improved by five times as large as a reference magnification. Then, foreign objects 12 within 1mm on an observation CRT can be observed as those within 5 mm , thus enabling the foreign objects to be found easily. A movement for retrieval in the division region can be made speedily and accurately by using an electron beam.

59. 发明专利

JPH0512031A COMPILING METHOD 失效
公开(公告)号：JPH0512031A
公开(公告)日：1993-01-22
申请号：JP16539191
申请日：1991-07-05
申请人： HITACHI LTD , HITACHI SOFTWARE ENG
发明人： SATO OSAMU , NAKAJIMA MEGUMI , SAITO HIROSHI , TAKABAYASHI HIDEAKI
IPC分类号： G06F9/45 , G06F9/06
摘要： PURPOSE:To resolve the burden of recompilation of all related object programs by generating an object program which can take over and hand over the control table from and to another object program having a different control table form. CONSTITUTION:When the object program having procedures to hand over the control table to another object program or take over the control table from another object program is generated, a processing 7 to convert the control table into a control table in a new form to be used in this object program is built in the stage of semantic analysis if the control table of the another object program to be taken over is in the old form. If the control table of another object program to be handed over is in the old form, a processing 8 to convert the control table in the new form used in the object program into the old form is built in. Consequently, the control table is correctly referred because of conversion to the control table form of the object program though the control table is taken over and handed over between object programs different in control table form.

60. 发明专利

JPS61241614A DISPLACEMENT DETECTING MECHANISM 失效
公开(公告)号：JPS61241614A
公开(公告)日：1986-10-27
申请号：JP8246185
申请日：1985-04-19
申请人： HITACHI LTD
发明人： ICHIKAWA KAZUYA , SATO OSAMU
IPC分类号： G01B11/24 , G01B13/00 , G01B13/06 , H01L21/66
摘要： PURPOSE:To enable detection at high accuracy by constituting the nozzle multiply to constitute pressure wall of fluid jetted from outside nozzle around fluid jetted from inside nozzle. CONSTITUTION:A nozzle 5 is constituted doubly of an inner tube 6 and an outer tube 7. Accordingly, flow of air jetted from the opening end of the inner tube 6 is sorrounded by a pressure wall constituted by flow of air jetted from the opening end of the outer tube 7. When a space between the opening end of the nozzle 5 and the plane of a wafer 2 becomes more than a specified value, outflow of air to outside starts from a space A in the inner tube 6 through the pressure wall. Consequently, when a safety space to prevent damage of the wafer 2 is provided between the opening of the nozzle 5 and the plane of the wafer 2 caused by contact of the two, variation of pressure in the space A detected by an air pressure detecting section 12 for specified displacement of the plane of the wafer 2 in the direction of optic axis of a microscope section 3 becomes large. Thus, sensitivity of detection of displacement in the direction of optic axis of the microscope section 3 can be increased.

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