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51. 发明专利

JPS62144379A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS62144379A
公开(公告)日：1987-06-27
申请号：JP28595885
申请日：1985-12-18
申请人： SHARP KK
发明人： KANEIWA SHINJI , KUDO HIROAKI , MATSUI KANEKI , TAKIGUCHI HARUHISA , YOSHIDA TOMOHIKO
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To reduce reactive currents flowing into an optical guide layer by inserting a GaAlAs group or InGaPAs group barrier layer between a GaAlAs group or InGaPAs group active layer for oscillating a laser and the InGaPAs optical guide layer, to which a diffraction grating is formed, adjoined to the active layer. CONSTITUTION:An N-type GaAlAs clad layer 2, a non-doped GaAs active layer 3, a P-type GaAlAs barrier layer 9, and a P-type InGaPAs optical guide layer 4 are grown continuously on an N-type GaAs substrate 1 through a liquid-phase epitaxial growth method. A P-type GaAlAs clad layer 5 and a P-type GaAs cap layer 6 are grown on the optical guide layer 4 with the diffraction grating in succession through the same growth method, and N side and P side ohmic electrodes 7, 8 consisting of Au/Ge/Ni and Au/Zn are each shaped onto the substrate 1 and the cap layer 6, thus forming double hetero-junction structure. The barrier layer 9 is composed of Ga1-xAlxAs (0.2

52. 发明专利

JPS6260285A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPS6260285A
公开(公告)日：1987-03-16
申请号：JP20116185
申请日：1985-09-10
申请人： SHARP KK
发明人： YOSHIDA TOMOHIKO , TAKIGUCHI HARUHISA , KANEIWA SHINJI , KUDO HIROAKI , MATSUI KANEKI
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a laser element which is suitable to be used as a signal light source by a method wherein, even if an injected current is increased, a current which flows through a current blocking layer is hardly increased and high output operation can be realized. CONSTITUTION:As a cladding layer 4 and the first buried layer 5 are separated from each other by a Zn diffused region 8 which has a conductive type opposite to that of the layers 4 and 5, a gate current (7-b) can not flow. Therefore, even if an injected current 7 is increased in order to increase an output, a current blocking layer of a thyristor structure, which is constituted by the cladding layer 4, the second buried layer 6, the first buried layer 5, a buffer layer 2 and a substrate 1, hardly becomes conductive so that a reactive current can be kept very low.

53. 发明专利

JP2000324398A SOLID IMAGE PICKUP DEVICE 失效
公开(公告)号：JP2000324398A
公开(公告)日：2000-11-24
申请号：JP13335199
申请日：1999-05-13
申请人： SHARP KK
发明人： KUDO HIROAKI
IPC分类号： H04N5/335 , H04N5/341 , H04N5/353 , H04N5/357 , H04N5/363 , H04N5/369 , H04N5/374
摘要： PROBLEM TO BE SOLVED: To obtain uniform pictures without any lateral band-shaped noise in a shutter operation by operating a reset operation for the shutter of another pixel line in a period different from a reading operation period regardless of a reset pulse to be applied at the time of reading in a horizontal blanking period. SOLUTION: A reset operation for the shutter of another pixel line is operated in a period different from a reading operation period regardless of a reset pulse to be applied at the time of reading in a horizontal blanking period. For example, an amplification type solid image pickup device 100 is provided with a first vertical scanning circuit 109 and a second vertical scanning circuit 110 or the like. Then, in the second vertical scanning circuit 110, the rest operation for the shutter is operated when a reset pulse (for the shutter) is turned into a high level in a period different form a reading period in a normal exposure period. That is, an exposure period can be freely selected in the normal exposure period by controlling the reset pulse (for the shutter).

54. 发明专利

JPH11214666A AMPLIFYING PHOTOELECTRIC CONVERSION ELEMENT AND AMPLIFYING SOLID STATE IMAGE SENSOR 失效
公开(公告)号：JPH11214666A
公开(公告)日：1999-08-06
申请号：JP1620898
申请日：1998-01-28
申请人： SHARP KK
发明人： KUDO HIROAKI
IPC分类号： H01L27/146 , H01L31/10 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/3745
摘要： PROBLEM TO BE SOLVED: To provide an amplifying photoelectric conversion element in which pixel configuration can be reduced and the density can be increased while taking advantage that stored charges can be discharged efficiently through low voltage driving by preventing formation of potential roof beneath a second gate electrode effectively thereby forming a second gate electrode. SOLUTION: A second gate electrode 3 is formed in comb shape surrounding a first gate electrode. The field generated by a potential applied to a drain region 6 contiguous to the second gate electrode 3 has a constant effective distance beneath the second gate electrode 3. In other words, effect of the field is reduced at a part remote from the drain region 6 and same effect as increasing the length of second gate region is brought about. Since a potential root is not formed beneath a part of the second gate electrode 3, a reset channel can be ensured and defective reset can be eliminated.

55. 发明专利

JPH09246516A AMPLIFICATION-TYPE SOLID-STATE IMAGE SENSING DEVICE 失效
公开(公告)号：JPH09246516A
公开(公告)日：1997-09-19
申请号：JP5657896
申请日：1996-03-13
申请人： SHARP KK
发明人： KUMAGAI KAZUYA , KUDO HIROAKI
IPC分类号： H01L27/146 , H04N5/335 , H04N5/355 , H04N5/369 , H04N5/372 , H04N5/3745
摘要： PROBLEM TO BE SOLVED: To provide an amplification-type solid-state image sensing device which is easily enhanced in density, number of pixels, and an S/N ratio and capable of reading out signals at a high speed. SOLUTION: An amplification-type solid-state image sensing device is composed of amplification-type solid-state image sensing elements which are arranged in matrix and each possessed of a function that photoelectric conversion charge is stored through a first gate region 2, and a potential variation under the first gate region 2 modulated with signal charge stored in the first gate region 2 is outputted as signal and a reset function that signal charge stored in the first gate region 2 is moved to a substrate and exhausted. Pixel signal outputs which are read out are fed to an output impedance conversion circuit (source follower circuit) 33 equipped with a series circuit of a drive transistor 31 and a load transistor 32, and an image output voltage is taken out through the output terminal 34 of the output impedance conversion circuit 33, so that an accurate signal output free from a distortion of signal waveform and of high speed can be obtained.

56. 发明专利

JPH0774432A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0774432A
公开(公告)日：1995-03-17
申请号：JP17068394
申请日：1994-07-22
申请人： SHARP KK
发明人： KUDO HIROAKI , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , NAKANISHI CHITOSE , SUGAWARA SATOSHI
IPC分类号： H01L33/14 , H01L33/30 , H01S5/00 , H01S3/18 , H01L33/00
摘要： PURPOSE:To enable stable single transverse mode oscillation and single longitudinal mode oscillation of small oscillation threshold current by forming a diffraction grating on a surface of an optical guide layer formed above an active layer and by providing an epitaxial support layer. CONSTITUTION:Since a diffraction grating 14 is formed on a surface of a surface of an optical guide layer 5 formed on an active layer 3, it is possible to enlarge refraction factor difference in a vertical transverse direction to a resonator direction without damaging combination efficiency between laser beam generated in the active layer 3 and the diffraction grating 14. Therefore, stable single transverse mode oscillation and single longitudinal mode oscillation can be acquired. Since the active layer 3 is not formed on the diffraction grating 14, crystallinity of the active layer 3 does not lower and element characteristic improves as an oscillation threshold current becomes smaller. Furthermore, since an epitaxial layer 16 is provided, change of a configuration wherein a stripe groove 15 is buried is prevented and reproducibility of element characteristic of a semiconductor laser device is improved.

57. 发明专利

JPH0642583B2 失效
公开(公告)号：JPH0642583B2
公开(公告)日：1994-06-01
申请号：JP20423188
申请日：1988-08-17
申请人： SHARP KK
发明人： KUDO HIROAKI , TAKIGUCHI HARUHISA , SAKANE CHITOSE , SUGAWARA SATOSHI
IPC分类号： H01S5/00 , H01S5/12 , H01S5/24 , H01S3/18
摘要： A semiconductor laser device with a resonator containing an active region for laser oscillating operation is disclosed which comprises a third-order diffraction grating with a periodic corrugation for producing feedback of laser light, the corrugation being of substantially rectangular shape, wherein the ratio of the width of each convex portion of the corrugation to the periodicity of the corrugation is in the range of 0.20 to 0.25, 0.40 to 0.60, or 0.70 to 0.95.

58. 发明专利

JPH0697575A SEMICONDUCTOR LASER 失效
公开(公告)号：JPH0697575A
公开(公告)日：1994-04-08
申请号：JP24507992
申请日：1992-09-14
申请人： SHARP KK
发明人： TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , KUDO HIROAKI , SUGAWARA SATOSHI , TANETANI MOTOTAKA
IPC分类号： H01S5/00 , H01S5/20 , H01S5/22 , H01S5/223 , H01S5/323 , H01S3/18
摘要： PURPOSE:To enable the current constriction capacity to be increased furthermore, the difference in the equivalent refractive indexes inside and outside of a striped trench to be adjusted within a wide range by a method wherein laser beam transmitting layers in addition to a laser beam absorbing layer is to be provided in a photocurrent confirement means so as to adjust the mixed crystal ratio and the thickness of these laser beam transmitting layers. CONSTITUTION:The semiconductor laser is provided with a semiconductor substrate 101, a laminated structure formed on the semiconductor substrate 101 and a current light confirement means 150 formed on the laminated structure 140. The current light confirement means 150 is provided with two multilayer light confirement parts (current light confirement layers) 151a and b as well as a striped trench so as to spatially separate the parts 151a from 151b. 152. The forbidden band widths of laser beam transmitting layers 107 and 109 are specified to be wider than that of an active layer 103 so that the laser beams may transmit these layers 107, 109. Furthermore, the forbidden band width of a laser beam absorbing layer 108 is specified to be narrower than that of the active layer 103 so that the layer 108 may absorb the laser beams.

59. 发明专利

JPH0548205A SEMICONDUCTOR LASER ELEMENT OF DISTRIBUTED FEEDBACK TYPE, AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0548205A
公开(公告)日：1993-02-26
申请号：JP20084491
申请日：1991-08-09
申请人： SHARP KK
发明人： SUGAWARA SATOSHI , TAKIGUCHI HARUHISA , INOGUCHI KAZUHIKO , NAKANISHI CHITOSE , KUDO HIROAKI
IPC分类号： G02B5/18 , H01S3/08 , H01S5/00 , H01S5/10
摘要： PURPOSE:To obtain a semiconductor laser element of a distributed feedback type, which has an effective refractivity waveguide structure having a reduced waveguide loss, and which oscillates in a stable fundamental transverse mode, by so forming a light guide layer located in the bottom part of a stripe groove to be a current constricting mechanism that its thickness is increased proceeding from near the sidewall of the stripe groove to the central part in its width direction. CONSTITUTION:By a first crystal growth process, on a semiconductor substrate 100, formed are in succession a first clad layer 102, an active layer 103, a carrier barrier layer 104, a current blocking layer 105, etc. On the surfaces of the carrier barrier layer 104 and the current blocking layer 105, diffraction gratings 106 are stamped. By a second crystal growth process, on the carrier barrier layer 104 and the current blocking layer 105 whereon the diffraction gratings 106 are stamped, formed are in succession a second clad layer 108 and a contact layer 109.

60. 发明专利

JPH03217068A SEMICONDUCTOR LASER ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH03217068A
公开(公告)日：1991-09-24
申请号：JP1333390
申请日：1990-01-22
申请人： SHARP KK
发明人： SUGAWARA SATOSHI , TAKIGUCHI HARUHISA , KUDO HIROAKI , SAKANE CHITOSE
IPC分类号： H01S5/00
摘要： PURPOSE:To enable two types of laser light whose deflection direction differs mutually to be applied and obtain a laser element suitable for light source for an optic-related equipment such as a light source for measuring light by providing lamination structures with an active region on the upper surface and side surface of a stripe-shaped ridge structure which is formed on a semiconductor substrate and by providing a buried layer covering them. CONSTITUTION:The title item has a semiconductor substrate 1, a stripe-shaped ridge structure 11 which is formed on the semiconductor substrate 1, a first lamination structure 10a which is provided on the upper surface of the ridge structure 11 and has an active region 4, a second lamination structure 10b which is provided on one side surface of the ridge structure 11 and has an active region, a third lamination structure 10c which is provided on the other side surface of the ridge structure 11 and has an active region, a buried layer 6 covering the first to third lamination structures 10a-10c, a first electrode 8a which is formed on the buried layer 6 and is electrically connected to the second lamination structure 10b, a second electrode 8b which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c, and a third electrode 8c which is formed on the buried layer 6 and is electrically connected to the third lamination structure 10c.

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