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51. 发明专利

JP2012017244A Method for manufacturing quartz glass crucible 审中-公开
标题翻译：制造石英玻璃可溶性的方法
公开(公告)号：JP2012017244A
公开(公告)日：2012-01-26
申请号：JP2010290382
申请日：2010-12-27
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KUWAHARA HIROKI
IPC分类号： C03B20/00 , C30B15/10 , C30B29/06
CPC分类号： C03B19/095
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a quartz glass crucible, with which concentration of impurities, such as Al, Ca is suppressed by suppressing evaporation (vaporization) of SiOon a surface of the quartz glass crucible.SOLUTION: The method includes: a step to form a crucible-shaped object by depositing quartz glass raw material powder; a step to start arc discharge; a step to form a transparent quartz glass layer by conducting arc discharge, melting the quartz glass raw material powder inside the crucible-shaped object and forming the transparent quartz glass layer; a step to form an opaque quartz glass layer to form the opaque quartz glass layer having air bubbles on the outside of the crucible-shaped object after the transparent quartz glass layer forming step; a step to blow gas for the purpose of suppressing reaching high temperature of a prescribed part on the inside of the crucible-shaped object by blowing gaseous nitrogen or gaseous helium thereto during the opaque quartz glass layer forming step; and a step to stop the arc discharge and the gas blowing subsequent to formation of the opaque quartz glass layer on the outside of the crucible-shaped object.
摘要翻译：要解决的问题：提供一种制造石英玻璃坩埚的方法，通过抑制SiO 2的蒸发（蒸发）来抑制诸如Al，Ca的杂质浓度， / SB>在石英玻璃坩埚的表面上。解决方案：该方法包括：通过沉积石英玻璃原料粉末形成坩埚形物体的步骤; 启动电弧放电的步骤; 通过电弧放电来形成透明石英玻璃层的步骤，将坩埚形物体内的石英玻璃原料粉末熔化并形成透明石英玻璃层; 在透明石英玻璃层形成步骤之后，形成不透明石英玻璃层以形成在坩埚形物体的外侧上具有气泡的不透明石英玻璃层; 为了在不透明的石英玻璃层形成步骤期间吹入气态氮或气态氦，在坩埚形物体的内部抑制达到高温的目的，吹送气体的步骤; 以及在坩埚形物体的外侧形成不透明石英玻璃层之后停止电弧放电和气体吹送的步骤。版权所有（C）2012，JPO＆INPIT

52. 发明专利

JP2012014018A Method for producing glass micro lens array 有权
标题翻译：生产玻璃微透镜阵列的方法
公开(公告)号：JP2012014018A
公开(公告)日：2012-01-19
申请号：JP2010151421
申请日：2010-07-01
申请人： Takeji Arai , Covalent Materials Corp , コバレントマテリアル株式会社 , 武二新井
发明人： ARAI TAKEJI , GOTO HIROYUKI , KANAMARU EIICHI , UEDA SHINICHI
IPC分类号： G02B3/00 , C03C15/00 , C03C23/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a glass micro lens array, by which the glass micro lens array free from defectiveness and excellent in durability and translucency can be easily mass-produced with high precision.SOLUTION: In this method for producing the glass micro lens array, on a mirror-polished glass substrate, a laser beam absorbing film is formed; local stress is given to the glass substrate by irradiating a laser beam to the film; and then the film is removed; and dry etching or wet etching is applied to the glass substrate to form a portion, where the stress locally exists, into a shape of a concave lens.
摘要翻译：解决的问题：为了提供一种玻璃微透镜阵列的制造方法，通过该方法可以高精度地容易地批量生产无缺陷性和耐久性和半透明性的玻璃微透镜阵列。解决方案：在该玻璃微透镜阵列的制造方法中，在镜面抛光玻璃基板上形成激光束吸收膜，通过向薄膜照射激光束来对玻璃基板施加局部应力; 然后去除电影; 并且对玻璃基板施加干蚀刻或湿蚀刻，以形成局部存在应力的部分为凹透镜的形状。版权所有（C）2012，JPO＆INPIT

53. 发明专利

JP4814855B2 Silica glass crucible 有权
公开(公告)号：JP4814855B2
公开(公告)日：2011-11-16
申请号：JP2007253106
申请日：2007-09-28
申请人：コバレントマテリアル株式会社
发明人：清明三須 , 総樹木村 , 泰臣水野
IPC分类号： C30B29/06 , C03B20/00 , C30B15/10
CPC分类号： C03B19/095 , Y02P40/57

54. 发明专利

JP4811946B2 Plasma processing apparatus for member 有权
公开(公告)号：JP4811946B2
公开(公告)日：2011-11-09
申请号：JP2007009721
申请日：2007-01-19
申请人：コバレントマテリアル株式会社
发明人：尊裕久保 , 征隆村田 , 敬司森田 , 敬祐渡邉
IPC分类号： C23C16/44 , C04B35/50 , C22C1/05 , C22C29/12 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a member for plasma processor superior in corrosion resistance against a halogen-based corrosive gas, plasma or the like, also superior in heat shock resistance, and usable for manufacturing apparatus for semiconductors and liquid crystals, particularly for places requiring conductivity in plasma treating apparatus. SOLUTION: The member is formed of an yttria ceramic fired body which is formed by dispersing 50-300 wt.% of tungsten and/or molybdenum in yttria, has the open porosity of 0.2% or smaller, the volume resistivity of 10 -6 to 10 -1 Ωcm at 25°C, and the heat shock resistance temperature of 150°C or higher. COPYRIGHT: (C)2008,JPO&INPIT

55. 发明专利

JP4798715B2 Silica glass crucible 有权
公开(公告)号：JP4798715B2
公开(公告)日：2011-10-19
申请号：JP2007083963
申请日：2007-03-28
申请人：コバレントマテリアル株式会社
发明人：清明三須 , 和義加藤 , 和子福谷 , 俊之菊池 , 綾平齋藤
IPC分类号： C30B29/06 , C03B5/08 , C03B20/00 , C30B15/10
CPC分类号： C30B15/10 , C30B15/30 , C30B29/06 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1032 , Y10T117/1052

56. 发明专利

JP4785762B2 Method for producing a single crystal 有权
公开(公告)号：JP4785762B2
公开(公告)日：2011-10-05
申请号：JP2007019041
申请日：2007-01-30
申请人：コバレントマテリアル株式会社
发明人：昭彦小林
IPC分类号： C30B15/22

57. 发明专利

JP4785039B2 Lifetime measurement method of a silicon wafer 有权
公开(公告)号：JP4785039B2
公开(公告)日：2011-10-05
申请号：JP2005231973
申请日：2005-08-10
申请人：コバレントマテリアル株式会社
发明人：延恵荒木
IPC分类号： H01L21/66

58. 发明专利

JP2011184213A Method for producing silicon single crystal 审中-公开
标题翻译：生产硅单晶的方法
公开(公告)号：JP2011184213A
公开(公告)日：2011-09-22
申请号：JP2010048196
申请日：2010-03-04
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KUBOTA OSAMU
IPC分类号： C30B29/06 , C30B15/00
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal, by which generation of pinholes in a silicon single crystal can be remarkably suppressed.
SOLUTION: A method for producing a silicon single crystal by Czochralski method is provided, wherein the method includes, for example: in a control range (Ss-Es) of the furnace pressure from at least after a silicon raw material is melted (Ss) until pulling a straight body part of the silicon single crystal is finished (Es), a step of always gradually increasing (Rp) the furnace pressure without reducing the pressure (Fig.(a)); a step of keeping constant pressure (Cp) without reducing the furnace pressure, with addition of a step of gradually increasing (Rp) the furnace pressure (Figs.(b) and (c)); and a plurality of steps of keeping constant pressure (Cp) without reducing the furnace pressure and of gradually increasing Rp the furnace pressure (Fig.(d)). The step of gradually increasing Rp the furnace pressure is preferably carried out in the range from 20 Torr to 85 Torr.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以显着抑制硅单晶中的针孔的产生的硅单晶的制造方法。解决方案：提供了一种通过切克劳斯基法制造单晶硅的方法，其中所述方法包括例如：至少在硅原料熔化后的炉压力的控制范围（Ss-Es）（Ss）直到拉直硅单晶的一部分完成（Es），始终逐渐增加（Rp）炉压而不降低压力（图（a））; 通过添加逐渐增加（Rp）炉压力的步骤（图（b）和（c）），保持恒定压力（Cp）而不降低炉压力的步骤; 以及在不降低炉压的同时保持恒定压力（Cp）并逐渐增加炉压的Rp的多个步骤（图（d））。炉压逐渐升高的步骤优选在20托至85托的范围内进行。版权所有（C）2011，JPO＆INPIT

59. 发明专利

JP2011171414A Heat treatment method of silicon wafer 有权
标题翻译：硅波热处理方法
公开(公告)号：JP2011171414A
公开(公告)日：2011-09-01
申请号：JP2010032103
申请日：2010-02-17
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ARAKI KOJI , AOKI TATSUHIKO , SENDA TAKESHI , SUDO HARUO , TOYODA EIJI , ISOGAI HIROMICHI
IPC分类号： H01L21/322 , C30B29/06 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment method of a silicon wafer capable of extinguishing a crystal defect such as a COP on the surface of a wafer as a device active region, capable of forming a BMD with a high density in a bulk, and capable of suppressing a slip generated in an RTP.
SOLUTION: The heat treatment method thermally treats the silicon wafer obtained by slicing a silicon single-crystal ingot manufactured by a Czochralski method. In the heat treatment method of the silicon wafer, the front and rear surface of the wafer are supplied with an oxygen-containing gas, a maximum reaching temperature T1 is set at a value from 1,300°C to the melting point of silicon and a temperature-drop speed from the maximum reaching temperature is set at the value from 75°C/sec to 120°C/sec, and rapid-heating/rapid-cooling heat treatment is conducted.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够消除晶片表面上的诸如COP的晶体缺陷的硅晶片的热处理方法作为器件有源区，能够形成高密度的BMD 并且能够抑制在RTP中产生的滑移。解决方案：热处理方法热处理由切克劳斯基法制造的硅单晶锭切片获得的硅晶片。在硅晶片的热处理方法中，向晶片的前表面和后表面供给含氧气体，最大到达温度T1设定为从1,300℃到硅的熔点，温度从最高到达温度的转速设定为75℃/秒〜120℃/秒的速度，进行快速加热/快速冷却热处理。版权所有（C）2011，JPO＆INPIT

60. 发明专利

JP2011171402A Method of heat treating silicon wafer 有权
标题翻译：热处理硅砂的方法
公开(公告)号：JP2011171402A
公开(公告)日：2011-09-01
申请号：JP2010031968
申请日：2010-02-17
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SENDA TAKESHI , ISOGAI HIROMICHI , TOYODA EIJI , ARAKI KOJI , SENSAI KOJI , AOKI TATSUHIKO , SUDO HARUO , SAITO HIROYUKI , MAEDA SUSUMU , KASHIMA KAZUHIKO
IPC分类号： H01L21/322 , C30B29/06 , C30B33/02
摘要： PROBLEM TO BE SOLVED: To provide a method of heat treating a silicon wafer reducing crystalline defects such as voids in a front surface part of a wafer serving as a device active region and suppressing elongation of slip dislocation under a load such as a thermal stress in a device process.
SOLUTION: In the method of heat treating the silicon wafer obtained by slicing a silicon monocrystalline ingot manufactured by Czochralski method, a rapid heating and rapid cooling heat treatment is performed on the silicon wafer which is at least 1.4×10
18 atoms/cm
3 in oxygen concentration under an oxygen-containing atmosphere and at a highest end-point temperature which is at least 1,325°C and not more than the melting point of the silicon.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种对硅晶片进行热处理的方法，减少了晶片的前表面部分中的诸如空隙的晶体缺陷，并且抑制了在诸如设备过程中的热应力。解决方案：在通过切割由Czochralski法制造的硅单晶锭获得的硅晶片的热处理方法中，对至少为1.4×10 的硅晶片进行快速加热和快速冷却热处理， 18 原子/ cm 3 / SP>在氧气浓度下，在最高终点温度为至少1325℃且不大于硅的熔点。版权所有（C）2011，JPO＆INPIT

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