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41. 发明专利

JP2005056768A Plasma treatment device and method 审中-公开
标题翻译：等离子体处理装置和方法
公开(公告)号：JP2005056768A
公开(公告)日：2005-03-03
申请号：JP2003288255
申请日：2003-08-06
申请人： Canon Inc , キヤノン株式会社
发明人： YOKOSHIMA SHIGENOBU , TAKAMURA YUICHI
IPC分类号： H05H1/46 , C23C16/511 , C23F4/00 , H01J7/24 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/31 , H05H1/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32256
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment device and a method generating plasma surely in a short time and stably maintaining the same until it transits to a matching position after it has once been generated. SOLUTION: The plasma treatment device is provided having a vacuum vessel in which a treated object is housed and is put under a plasma treatment in vacuum or under reduced pressure, an impedance matching unit arranged between a microwave generating source for generating microwave and the vacuum vessel for making impedance adjustment, and a controlling part controlling operation of the impedance matching unit in accordance with a matching state of the impedance matching unit, an intensity distribution of microwaves necessary for plasma generation in the matching state, and a matching state of the impedance unit where a reflective wave of the microwave becomes the lowest during the plasma treatment. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供等离子体处理装置和在短时间内可靠地产生等离子体并且稳定地保持等离子体的方法，直到其一旦被产生之后转移到匹配位置。解决方案：提供具有真空容器的等离子体处理装置，其中处理物体被容纳在真空中或在减压下进行等离子体处理，阻抗匹配单元设置在用于产生微波的微波发生源和用于进行阻抗调节的真空容器，以及根据阻抗匹配单元的匹配状态控制阻抗匹配单元的操作的控制部分，匹配状态下等离子体产生所需的微波的强度分布以及匹配状态在等离子体处理期间微波的反射波变得最低的阻抗单元。版权所有（C）2005，JPO＆NCIPI

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