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    • 42. 发明专利
    • Synchronous memory controller, synchronous memory, and its control method
    • 同步存储控制器,同步存储器及其控制方法
    • JP2008310371A
    • 2008-12-25
    • JP2007154630
    • 2007-06-12
    • Spansion Llcスパンション エルエルシー
    • SHIBATA KENJINAGAO MITSUHIROKAWAMOTO SATORU
    • G06F12/00G06F12/02G11C16/02G11C16/06
    • G11C16/10G11C7/10G11C7/1072
    • PROBLEM TO BE SOLVED: To provide a synchronous memory controller for suppressing an access operation from being delayed while securing compatibility with a synchronous memory (SDRAM), and to provide a synchronous memory and its control method. SOLUTION: In the synchronous memory for controlling one synchronous memory 3 connected to a data bus BUS by a second command group which is different from the first command group for controlling other synchronous memory (SDRAM) connected to a data bus BUS, one synchronous memory 3 is provided with a first command reception part 10 for receiving the first command group; and a second command reception part 40 for, while the first command group received by the first command reception part 10 is executed, receiving a command unique to the one synchronous memory 3 different from the first command group. COPYRIGHT: (C)2009,JPO&INPIT
    • 要解决的问题:提供一种同步存储器控制器,用于在确保与同步存储器(SDRAM)的兼容性的同时抑制访问操作被延迟,并提供同步存储器及其控制方法。 解决方案:在用于控制与数据总线BUS相连的同步存储器3的同步存储器中,第二命令组与第一命令组不同,用于控制连接到数据总线BUS的其它同步存储器(SDRAM),一个 同步存储器3设置有用于接收第一命令组的第一命令接收部分10; 以及第二命令接收部分40,用于在执行由第一命令接收部分10接收到的第一命令组时,接收与第一命令组不同的一个同步存储器3唯一的命令。 版权所有(C)2009,JPO&INPIT
    • 45. 发明专利
    • Memory system
    • 记忆系统
    • JP2007220210A
    • 2007-08-30
    • JP2006039851
    • 2006-02-16
    • Fujitsu Ltd富士通株式会社
    • OGAWA TOSHIOTAKEMAE YOSHIHIROOKAJIMA YOSHINORIENDO TETSUHIKOMATSUZAKI YASURO
    • G11C11/401G06F12/00G06F12/02G11C11/22G11C16/02H03K19/173H03K19/185
    • G11C7/10G06F11/1068G11C7/1045
    • PROBLEM TO BE SOLVED: To reduce the development cost of a semiconductor memory by realizing various kinds of memory functions with one semiconductor memory. SOLUTION: In the memory system, the semiconductor memory has a field programmable part FP in which logic for converting into each other an external signal input/output for the memory system and an internal signal input/output for a memory cell array is programmed. The program constituting logic of the field programmable part FP is stored in a nonvolatile program memory part PRG. Even when an interface of a controller accesses the semiconductor memory is different from an interface for accessing the memory cell array, the controller can access the memory cell array. One kind of semiconductor memory is utilized, therefore, as a plurality off kinds of semiconductor memories. Consequently, developing a plurality of kinds of semiconductor memories is not required, the development cost is reduced. COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:通过用一个半导体存储器实现各种存储功能来降低半导体存储器的开发成本。 解决方案:在存储器系统中,半导体存储器具有现场可编程部分FP,其中用于将存储器系统的外部信号输入/输出和用于存储器单元阵列的内部信号输入/输出彼此转换的逻辑是 程序。 现场可编程部分FP的构成逻辑的程序存储在非易失性程序存储器部分PRG中。 即使当控制器的接口访问半导体存储器与用于访问存储单元阵列的接口不同时,控制器也可以访问存储单元阵列。 因此,使用一种半导体存储器作为多种不同种类的半导体存储器。 因此,不需要开发多种半导体存储器,从而降低了开发成本。 版权所有(C)2007,JPO&INPIT
    • 50. 发明专利
    • Stacked memory module and memory system
    • 堆叠存储器模块和存储器系统
    • JP2005063448A
    • 2005-03-10
    • JP2004236157
    • 2004-08-13
    • Samsung Electronics Co Ltd三星電子株式会社
    • SO HEISEICHO JEONG-HYEONLEE JUNG-JOONRI SAISHUN
    • G06F12/00G11C5/06G11C7/10G11C8/06H05K1/14H05K1/18
    • G11C8/06G11C5/063G11C7/10H05K1/144H05K1/181
    • PROBLEM TO BE SOLVED: To provide a stacked memory module with which a large-capacity memory module is operated at high speed, and to provide a memory system. SOLUTION: The stacked memory module includes: first and second circuit boards; an electric connector; and a buffer. The first and second circuit boards have inner faces facing each other and outer faces facing away from each other. The first circuit board includes a connection portion for connecting the memory module to a mother board. At least one of the inner and outer faces of the first circuit board loads a first plurality of memory chips. At least one of the inner and outer faces of the second circuit board loads a second plurality of memory chips. The electrical connector electrically connects the first and second circuit boards. The buffer is loaded on the first circuit board and buffers signals for the first and second plurality of memory chips. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:提供一种大容量存储器模块以高速运行的堆叠式存储器模块,并提供存储器系统。 解决方案:堆叠式存储模块包括:第一和第二电路板; 电连接器; 和缓冲区。 第一和第二电路板具有彼此面对的内表面和彼此背离的外表面。 第一电路板包括用于将存储器模块连接到母板的连接部分。 第一电路板的内表面和外表面中的至少一个加载第一多个存储器芯片。 第二电路板的内表面和外表面中的至少一个加载第二多个存储器芯片。 电连接器电连接第一和第二电路板。 缓冲器被加载在第一电路板上,并缓冲第一和第二多个存储器芯片的信号。 版权所有(C)2005,JPO&NCIPI