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41. 发明专利

JP2008085770A Nonvolatile latch circuit, and nonvolatile flip-flop circuit 有权
标题翻译：非易失性电路和非易失性FLIP-FLOP电路
公开(公告)号：JP2008085770A
公开(公告)日：2008-04-10
申请号：JP2006264590
申请日：2006-09-28
申请人： Toshiba Corp , 株式会社東芝
发明人： ABE KEIKO , HIRAI TAKATOMO , NAKAMURA SHIHO , MORISE HIROSHI , HAMADA MOTOTSUGU
IPC分类号： H03K3/037 , H03K3/356
CPC分类号： G11C11/16 , G11C14/0081
摘要： PROBLEM TO BE SOLVED: To enable huge rewrite resistance to be obviated, by improving scalability even in microfabrication.
SOLUTION: There are provided: a first gate part for controlling fetching or cutting-off of an input signal; a first logic gate which includes a first input terminal and a second input terminal for receiving a first control signal and operates as an inverter or as a gate outputting a constant voltage in response to the first control signal; a second logic gate which includes a first input terminal for receiving the output of the first logic gate and a second input terminal for receiving the first control signal and operates as an inverter or as a gate for outputting a constant voltage in response to the first control signal; a second gate part which sends the output of the second logic gate to the first input terminal of the first logic gate; first and second resistance elements of which resistance is varied in accordance with a current flowing direction; first and second data write signal lines; a first output node which outputs an output of a second logic circuit; and a second output node which outputs an output of a first logic circuit as an inverted signal.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：即使在微细加工中，通过提高可扩展性，可以避免巨大的重写阻力。解决方案：提供：用于控制输入信号的取出或切断的第一门部分; 第一逻辑门，其包括第一输入端和第二输入端，用于接收第一控制信号并作为反相器工作或作为响应于第一控制信号输出恒定电压的栅极; 第二逻辑门，其包括用于接收第一逻辑门的输出的第一输入端和用于接收第一控制信号的第二输入端，并且作为响应于第一控制的逆变器或用作输出恒定电压的栅极信号; 第二门部，其将第二逻辑门的输出发送到第一逻辑门的第一输入端; 电阻根据电流流动方向变化的第一和第二电阻元件; 第一和第二数据写入信号线; 输出第二逻辑电路的输出的第一输出节点; 以及输出第一逻辑电路的输出作为反相信号的第二输出节点。版权所有（C）2008，JPO＆INPIT

42. 发明专利

JP2019021356A 磁気メモリ审中-公开
公开(公告)号：JP2019021356A
公开(公告)日：2019-02-07
申请号：JP2017136254
申请日：2017-07-12
申请人： TOSHIBA CORP
发明人： IKEGAMI KAZUTAKA , FUJITA SHINOBU , ABE KEIKO
IPC分类号： G11C11/16 , H01L21/8239 , H01L27/105 , H01L43/08
摘要：【課題】メモリの特性を向上する。【解決手段】実施形態の磁気メモリは、第1の配線と第2の配線との間に接続され、セレクタ素子と磁気抵抗効果素子とを含むメモリセルと、メモリセルにデータを書き込むための書き込み電圧VWRを、メモリセルに印加する回路と、を含む。書き込み電圧VWRは、第1の電圧VSW及び第2の電圧VPGMを含む。第1の電圧VSWの電圧値Vaは、第2の電圧VPGMの電圧値Vbより低く、第1の電圧VSWが印加される第1の期間TSELは、第2の電圧VPGMが印加される第2の期間TMTJより長い。第1の電圧VSWが、メモリセルに印加された後、第2の電圧VPGMがメモリセルに印加される。【選択図】図11

43. 发明专利

JP2006186265A SWITCHING ELEMENT, RAILROAD SWITCHING DEVICE AND LOGIC CIRCUIT 审中-公开
公开(公告)号：JP2006186265A
公开(公告)日：2006-07-13
申请号：JP2004381028
申请日：2004-12-28
申请人： TOSHIBA CORP
发明人： TSUKAMOTO TAKAYUKI , FUJITA SHINOBU , ABE KEIKO
IPC分类号： H01L45/00 , H01L21/82 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/06
摘要： PROBLEM TO BE SOLVED: To provide a miniaturized switching element used for a crossbar circuit, etc. in which electric power consumption is reduced. SOLUTION: This is a switching element for switching over ON/OFF, and comprises a pair of electrodes 21 and 22 arranged on a substrate with a space from each other, a phase-change film 23 which is provided while contacting to these electrodes 21 and 22, and in which phase change is possible between a first phase state having a first specific resistance and a second phase state having a second specific resistance larger than the first specific resistance based on a heating history, a heating mechanism 25 for heating the phase-change film 23, and a crystallization accelerating layer 26 for accelerating crystallization of the film 23. COPYRIGHT: (C)2006,JPO&NCIPI

44. 发明专利

JP2010225685A SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
公开(公告)号：JP2010225685A
公开(公告)日：2010-10-07
申请号：JP2009068964
申请日：2009-03-19
申请人： TOSHIBA CORP
发明人： YASUDA SHINICHI , FUJITA SHINOBU , ABE KEIKO , SAKAI TADASHI , KATAGIRI MASAYUKI , YAMAZAKI YUICHI
IPC分类号： H01L25/065 , H01L21/822 , H01L25/07 , H01L25/18 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To improve the yield of a three-dimensional semiconductor integrated circuit. SOLUTION: The semiconductor integrated circuit includes first and second chips C1 and C2 which are mutually laminated and an electrode 10 which is constituted of a material comprising a magnetic element and is arranged between first and second chips C1 and C2. The first chip C1 has an inductor 12 installed adjacently to the electrode 10, a driving circuit 13 driving the inductor 12 and a control circuit 14 for controlling the driving circuit 13. COPYRIGHT: (C)2011,JPO&INPIT

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