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41. 发明专利

JP2008037690A Apparatus for forming carbon nanotube 有权
标题翻译：用于形成碳纳米管的装置
公开(公告)号：JP2008037690A
公开(公告)日：2008-02-21
申请号：JP2006213522
申请日：2006-08-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , SUZUKI YASUMASA , KATSUMATA TAKASHI , MURAKAMI HIROHIKO , NAKANO MINAO
IPC分类号： C01B31/02 , C23C16/26
摘要： PROBLEM TO BE SOLVED: To provide techniques for forming carbon nanotubes at a low temperature.
SOLUTION: A first vacuum chamber 10 and a second vacuum chamber 20 are connected via ducts 11, 21; the first and second vacuum chambers 10, 20 and the ducts 11, 21 are evacuated; and a catalyst thin film formed on the surface of a substrate in the first vacuum chamber 10 is carried through the ducts 11, 21 in the second vacuum chamber 20, where carbon nanotubes are grown on the surface of the catalyst thin film. Since the catalyst thin film is not exposed to air, the film is free from deactivation and allows carbon nanotubes to grow even at a low temperature.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供在低温下形成碳纳米管的技术。解决方案：第一真空室10和第二真空室20通过管道11,21连接; 第一和第二真空室10,20和管道11,21被抽真空; 并且在第一真空室10中的基板的表面上形成的催化剂薄膜通过在催化剂薄膜的表面上生长碳纳米管的第二真空室20中的管道11,21而被承载。由于催化剂薄膜不暴露于空气中，所以膜不会失活，并且即使在低温也允许碳纳米管生长。版权所有（C）2008，JPO＆INPIT

42. 发明专利

JP2007291424A Vapor deposition source and vapor deposition system 有权
标题翻译：蒸气沉积源和蒸气沉积系统
公开(公告)号：JP2007291424A
公开(公告)日：2007-11-08
申请号：JP2006118119
申请日：2006-04-21
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , SAITO ATSUSHI , HARA YASUHIRO , AMANO SHIGERU
IPC分类号： C23C14/24 , H01J37/34 , H01L21/203
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition source in which the replacement of a vapor deposition material is facilitated, and whose service life is long.
SOLUTION: In the vapor deposition source 3, on the face where a bar-shaped electrode 40 is brought into contact with a vapor deposition material 35, a male screw 41 and a female screw 42 are formed, respectively, and, in a state where the bar-shaped electrode 40 is fitted, the bar-shaped electrode 40 and the vapor deposition material 35 are screwed. Since the bar-shaped electrode 40 and the vapor deposition material 35 are tightly stuck to each other by being screwed, when the vapor deposition material 35 is deformed by the repetition of arc discharge, even if the vapor deposition material 35 is separated from a cap 36, the state of the tight stuck to the bar-shaped electrode 40 is retained, and thus the stop of the arc discharge does not occur.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种汽化淀积源，其中容易更换气相沉积材料，使用寿命长。解决方案：在气相沉积源3中，在棒状电极40与气相沉积材料35接触的表面上分别形成有阳螺纹41和内螺纹42，并且在棒状电极40嵌合的状态，棒状电极40和蒸镀材料35被螺合。由于棒状电极40和气相沉积材料35通过螺纹紧密地彼此粘合，所以当气相沉积材料35通过重复电弧放电而变形时，即使气相沉积材料35与盖分离如图36所示，紧固在棒状电极40上的状态被保持，从而不会发生电弧放电的停止。版权所有（C）2008，JPO＆INPIT

43. 发明专利

JP2004225107A Vapor deposition system 有权
公开(公告)号：JP2004225107A
公开(公告)日：2004-08-12
申请号：JP2003014352
申请日：2003-01-23
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HORIUCHI TAKASHI , CHIN KOKUKA , HARA YASUHIRO , AMANO SHIGERU , YAMAGUCHI KOICHI
IPC分类号： C23C14/32
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition system capable of depositing a thin film having good film quality.
SOLUTION: The vapor deposition system 1 has a magnet 51 and a vapor deposition source 3. A first magnetic pole 56 of the magnet 51 is directed toward one axial direction where electrically charged particles are discharged from a discharge section 30 of the source 3. Part of a yoke 55 is arranged near a second magnetic pole 57 and the terminal of the yoke 55 is extended near to an anode electrode 32. Magnetic lines of force 5 are converged within a yoke 51 and are emitted to an inside space of a vacuum chamber 2 from the terminal 58 and therefore the density of the magnetic lines of force 5 passing an outlet 39 is high in density and the electrically charged particles are efficiently carried by the magnetic lines of force 5 to the first electrode 56 side. Accordingly, if a substrate 7 is beforehand arranged near the first electrode 56, the electrically charged particles can be made to efficiently arrive at the substrate 7 and therefore the thin film having the good film quality can be deposited.
COPYRIGHT: (C)2004,JPO&NCIPI

44. 发明专利

JP2004144538A Micro ion beam generating apparatus 有权
公开(公告)号：JP2004144538A
公开(公告)日：2004-05-20
申请号：JP2002307996
申请日：2002-10-23
申请人： Natl Inst Of Radiological Sciences , Ulvac Japan Ltd , 株式会社アルバック , 独立行政法人放射線医学総合研究所
发明人： YUGAWA MASAE , IMAZEKI HITOSHI , YAMAGUCHI HIROSHI , SATO YUKIO , AGAWA YOSHIAKI , YAMAGUCHI KOICHI , HARA YASUHIRO , SEKI SEIJI
IPC分类号： G01N23/225 , G21K1/02 , G21K1/08 , G21K5/04
摘要： PROBLEM TO BE SOLVED: To provide a micro ion beam generating apparatus with a light trestle, in which a sample can be irradiated with an ion beam having sufficient intensity. SOLUTION: The micro ion beam generating apparatus includes an objective slit (6') which is used as a virtual light source in order to generate the ion beam and arranged on the line of the ion beam being deflected upward in the vertical direction by a deflector (5), a lens member (16) which is employed as a focusing / imaging means using the virtual light source as an image point and arranged on the downstream side of the objective slit, and a slit member (9') for limiting the divergent angle of the beam emitted from the objective slit and a steerer member (7, 8) for changing the direction of the beam, which are arranged between the objective slit and the lens member. Furthermore, the deflector is set so that the size of a beam image focused on a scanning beam line in the horizontal direction is approximately equal to that of a beam image focused on the objective slit, and a vibration isolator (22) is disposed between a tower (2) and the trestle (3) on which factor components are arranged on a straight line. COPYRIGHT: (C)2004,JPO

45. 发明专利

JP2004052012A Carbon nanotube film deposition equipment 有权
公开(公告)号：JP2004052012A
公开(公告)日：2004-02-19
申请号：JP2002207906
申请日：2002-07-17
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： AGAWA YOSHIAKI , HARA YASUHIRO , AMANO SHIGERU , HOSHINO AKIRA , ISHIKAWA MICHIO , MIYAGAWA YOSHIHIDE
IPC分类号： H05H1/46 , B82B3/00 , C23C16/26 , C23C16/511
摘要： PROBLEM TO BE SOLVED: To provide a carbon nanotube film deposition equipment for forming a carbon nanotube of high quality by relaxing a charge-up and increasing the current value of ions flowing into a stage. SOLUTION: A substrate stage to mount a substrate to be treated, and electrically insulated from the ground potential is provided inside a film deposition chamber. The stage is provided with a reverse bias mechanism such as an inverter source capable of applying a minus voltage by a direct current, and periodically applying a plus voltage so as to be superimposed on the minus voltage. COPYRIGHT: (C)2004,JPO

46. 发明专利

JP2004014420A Electron emission source 审中-公开
公开(公告)号：JP2004014420A
公开(公告)日：2004-01-15
申请号：JP2002169422
申请日：2002-06-11
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： YAMAGUCHI KOICHI , HORIUCHI TAKASHI , CHIN KOKUKA , HARA YASUHIRO , AMANO SHIGERU , AGAWA YOSHIAKI
IPC分类号： H01J9/02 , H01J1/304 , H01J29/04 , H01J31/12 , H01J37/073
摘要： PROBLEM TO BE SOLVED: To provide an electron emitter capable of emitting electrons with low power. SOLUTION: This electron emission source 20 is formed into an acute shape, and a hafnium carbide thin film 22 is formed on an electron emission part 23 formed of the tip of the source. Since hafnium carbide has a small work function as compared with a conductive material used for a conventional electron emission source, the emission source 20 can emit electrons with low power. When an electron exposure device is manufactured by using the emission source 20, voltage resistance against a high voltage does not need to be imparted, a device for the source can easily be miniaturized and large power is not necessary. Since the hafnium carbide has an extremely high melting point, the electron emission source has a long service life. COPYRIGHT: (C)2004,JPO

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