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41. 发明专利

JPS63219175A MANUFACTURE OF THIN-FILM TRANSISTOR 失效
公开(公告)号：JPS63219175A
公开(公告)日：1988-09-12
申请号：JP5275687
申请日：1987-03-07
申请人： OKI ELECTRIC IND CO LTD
发明人： NOMOTO TSUTOMU
IPC分类号： H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To render reliable the isolation between gate electrodes and source.drain electrodes by a method wherein the gate electrodes are built of an readily oxidizable material and an oxidation process is accomplished to affect the gate electrodes built like islands in an element-isolating pattern of a retained resist. CONSTITUTION:Gate electrodes 29a and 29b are constructed of such a readily oxidizable material as titanium or tantalum. A gate insulating layer 15 and active layer 17 are formed next, in that order. A process follows wherein resist patterns 19a and 19b are provided, wherewith dry etching is accomplished for the construction of insular structures 31a and 31b. In an oxygen plasma, oxidation is accomplished of a portion of the gate electrode 29a exposed in a pinhole 27, after which source.drain electrodes 23a and 23b are formed. This design eliminates the possibility of pinhole-caused short-circuiting between a gate electrode and source.drain electrodes, establishing a reliable isolation.

42. 发明专利

JPS62291064A MANUFACTURE OF THIN FILM TRANSISTOR 失效
公开(公告)号：JPS62291064A
公开(公告)日：1987-12-17
申请号：JP13380686
申请日：1986-06-11
申请人： OKI ELECTRIC IND CO LTD
发明人： NOMOTO TSUTOMU , YOSHIDA MAMORU
IPC分类号： H01L27/12 , H01L21/318 , H01L21/336 , H01L29/78 , H01L29/786
摘要： PURPOSE:To obtain a high-quality insulated film with a high dielectric constant holding characteristics such as high density, high resistance, low coating stress as well as electric charge in a low coated film and the like by forming a plasma silicon nitriding film in a process of gate insulated film formation according to glow discharge under specific conditions. CONSTITUTION:In a process of gate insulated film formation, a plasma silicon nitriding film is formed after performing glow discharge by permitting a RF power to have a density of 0.6-0.85 W/cm as a condition of the film formation and a gas mixing ratio of reaction gas NH3 and SiH4(NH3/SiH4) to be set at 15. For instance, the plasma silicon nitriding film having 0.2-0.5mum is deposited on a transparent insulated substrate where a gate electrode is formed according to glow discharge using N2 gas as a carrier gas 20% of SiH4(with an N2 base) and100% of NH3 gas as principal components. In such a case, the film formation is carried out according to the above conditions and moreover, the substrate temperature is set at a temp. of 300 deg.C and a gas pressure is set at 0.8 Torr.

43. 发明专利

JPS62245221A ACTIVE MATRIX LIQUID CRYSTAL PANEL 失效
公开(公告)号：JPS62245221A
公开(公告)日：1987-10-26
申请号：JP8819086
申请日：1986-04-18
申请人： OKI ELECTRIC IND CO LTD
发明人： NOMOTO TSUTOMU , NISHIKI TAMAHIKO
IPC分类号： G02F1/136 , G02F1/133 , G02F1/1368 , G09F9/30
摘要： PURPOSE:To uniform the gap between substrates where a liquid crystal should be charged to attain an excellent display quality by providing an insulating layer on at least one of faces facing each other of the first and second light- transmissive insulating substrates in an area corresponding to a display electrode. CONSTITUTION:A film consisting of a silicon oxide, a silicon nitride, or the like is formed on the first light-transmissive insulating substrate 11 consisting of glass, quartz, or the like with a film thickness approximately equal to the height from the surface of the first substrate 11 to the upper face of a TFT 15. This film is so worked by the photoetching technique that the film remains with the same area as a display electrode 13, thus obtaining an insulating layer 51. A transparent conductive film is formed on the first substrate 11 including this insulating film 51 and is worked by etching to form the display electrode 13 on the insulating layer 51, and thus, the TFT 15 as a switching element is formed. In this case, the area of the part, which is formed on the display electrode 13, of a source electrode 25 is narrowed within the range where they are surely connected electrically.

44. 发明专利

JPS62141777A THIN FILM TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62141777A
公开(公告)日：1987-06-25
申请号：JP28209885
申请日：1985-12-17
申请人： OKI ELECTRIC IND CO LTD
发明人： NOMOTO TSUTOMU
IPC分类号： H01L29/78 , G02F1/136 , G02F1/1368 , G09F9/35 , H01L21/336 , H01L27/12 , H01L29/786
摘要： PURPOSE:To manufacture an almost flat TFT to be switched at high speed and fitted for TFT two-dimension, high-density array by a method wherein the periphery of a gate electrode an a gate insulating film on a substrate is encircled by an intermediate insulating layer whereon a source electrode and a drain electrode are formed further to form an active layer thereon. CONSTITUTION:A gate electrode 11 with specified pattern is provided on a substrate 10 comprising transparent insulator and then a gate insulating film 12 with the same pattern as that of gate electrode 11 is provided on the gate electrode 11. Furthermore, an intermediate insulating layer 16 with almost the same thickness as that of gate insulating film 12 encircling the gate electrode 11 and the gate insulating film 12 is provided on the substrate 10. Finally, a source electrode 17 and a drain electrode 18 with respective specified patterns opposing to each other holding the formed position of gate insulating film 12 are provided on the intermediate insulating layer 16 while an active layer 19 including the gate insulating film 12 and extending from the end of source electrode 17 to the end of drain electrode 18 is provided.

45. 发明专利

JPS61281282A LIQUID CRYSTAL DISPLAY UNIT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS61281282A
公开(公告)日：1986-12-11
申请号：JP11270985
申请日：1985-05-25
申请人： OKI ELECTRIC IND CO LTD
发明人： YOSHIDA MAMORU , NOMOTO TSUTOMU
IPC分类号： G02F1/1333 , G02F1/133 , G09F9/35

46. 发明专利

JPS61270783A MANUFACTURE OF LIQUID CRYSTAL DISPLAY UNIT 失效
公开(公告)号：JPS61270783A
公开(公告)日：1986-12-01
申请号：JP11270885
申请日：1985-05-25
申请人： OKI ELECTRIC IND CO LTD
发明人： YOSHIDA MAMORU , NOMOTO TSUTOMU
IPC分类号： G09F9/30 , G02F1/133 , G02F1/1333 , G09F9/35

47. 发明专利

JPS61236587A LIQUID CRYSTAL DISPLAY ELEMENT 失效
公开(公告)号：JPS61236587A
公开(公告)日：1986-10-21
申请号：JP7904885
申请日：1985-04-13
申请人： OKI ELECTRIC IND CO LTD
发明人： NOMOTO TSUTOMU , YOSHIDA MAMORU , WATANABE TSUKASA
IPC分类号： G06F3/147 , G02F1/133 , G02F1/1333 , G09F9/35

48. 发明专利

JPS61201468A THIN-FILM TRANSISTOR AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS61201468A
公开(公告)日：1986-09-06
申请号：JP4184285
申请日：1985-03-05
申请人： OKI ELECTRIC IND CO LTD
发明人： NOMOTO TSUTOMU , YOSHIDA MAMORU
IPC分类号： H01L29/78 , H01L21/336 , H01L27/12 , H01L29/786
摘要： PURPOSE:To form thin-film transistors having excellent reliability in a large quantity with high yield at low cost by shaping a series of a flat foundation layer by an intermediate insulating layer and a gate electrode. CONSTITUTION:Layers such as polyimide layers 11 are formed onto the substrate surface of a glass substrate 1 except a section, to which a gate electrode 2 is shaped, as intermediate insulating layers 11. The thickness of the polyimide layers 11 is shaped in approximately the same size as the thickness of the gate electrode 2, thus forming a series of a stepless flat surface by the surfaces of the polyimide layers 11 and the surface of the gate electrode 2. A film such as a silicon nitride film 3 is shaped onto the surfaces of the polyimide layers 11 and the surface of the gate electrode 2 as a gate insulating film 3, and a film such as an amorphous silicon film 4 is formed onto the gate insulating film 3 as an active layer 4. A source electrode 5 and a drain electrode 6 consisting of thin-films such as Al thin-films are shaped onto the amorphous silicon film 4, and these films are laminated flatly in the manner of foundations in succession.

49. 发明专利

JPS6076633A PRESSURE SENSOR 失效
公开(公告)号：JPS6076633A
公开(公告)日：1985-05-01
申请号：JP18313383
申请日：1983-10-03
申请人： OKI ELECTRIC IND CO LTD , NIPPON DENSHI KOGYO SHINKO
发明人： NOSE ISAMU , NOMOTO TSUTOMU , NAGAI TSUNEO
IPC分类号： G01L5/00 , G01L1/00 , G01L11/02
摘要： PURPOSE:To prevent input of light from the back surface of a sensor and to improve the measuring accuracy of the pressure sensor utilizing light and the freedom of its structure, by forming a light receiving element and a light shielding layer on the same surface of a substrate for mounting light receiving element so as to hold a thin, light transmitting insulator in-between. CONSTITUTION:Chromium or Nichrome is evaporated on the side of a light receiving element 40a to be formed on the upper surface of a substrate 50 by a vacuum evaporation method, and a light shielding layer 30 is formed. An insulating layer 100 having light transmitting property is formed on the layer 30 using the oxide of silicon or aluminum by a sputtering method and the like, so that the light receiving element 40a is electrically shielded. The light receiving element 40a is formed by the sputtering method and the like. The thickness of the insulating layer is sufficiently thin in comparison with the thickness of a glass substrate 50. Therefore, it is approximately equivalent to the state the light shielding layer 30 is located directly beneath the light receiving element 40a. There is almost no input of light from the low surface of the light receiving element. Therefore the pressure sensitive accuracy and the freedom in structure can be improved.

50. 发明专利

JPS586661A APPRESSED TYPE IMAGE SENSOR 失效
公开(公告)号：JPS586661A
公开(公告)日：1983-01-14
申请号：JP10325881
申请日：1981-07-03
申请人： OKI ELECTRIC IND CO LTD
发明人： NOMOTO TSUTOMU , SAKAMOTO KATSUAKI , IWABUCHI TOSHIYUKI , WATANABE TSUKASA
IPC分类号： H04N1/028 , H04N1/03
摘要： PURPOSE:To eliminate the influence of pinholes in a photoconductor layer by arranging an upper comb-shaped electrode and a lower comb-shaped electrode in such a way that they never overlap each other in interposing the photoconductor layer between them. CONSTITUTION:A transparent common electrode has comb-shaped electrodes 220a, in 220b, and 220c and overlaps with neighter of upper comb-shaped electrodes 211a and 221b, interposing a photoconductor layer 201 between them, and is a lower electrode connected to the lower part of the photoconductor layer 201. Because of said structure, even if the photoconductor layer 201 has pinholes 230 and 231, no short circuit between the upper and lower electrodes is formed. Further, a decrease in yield due to the pinholes is prevented.

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