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    • 1. 发明专利
    • OPTICAL FILTER
    • JPH1195032A
    • 1999-04-09
    • JP25551597
    • 1997-09-19
    • OKI ELECTRIC IND CO LTD
    • NOMOTO TSUTOMU
    • G02B6/00
    • PROBLEM TO BE SOLVED: To provide a wave length dispersion compensating function for a luminous signal and a distribution function to an optional beam passage for the luminous signal. SOLUTION: This optical filter 10 is provided with one input port 12, two output ports 14a, 14b, two optical circulators 16a, 16b, and two FBGs(fiber Bragg grating) 18a, 18b. Respective optical circulators 16a, 16b are provided with the first ports (a), the second ports (b), and the third ports (c). Each optical circulator is constituted to output a luminous signal input to the first port (a) to the second port (b), and to output the luminous signal input to the second port (b) to the third port (c). The first port (a) in the first circulator 16a is connected to the input port 12. The third ports (c) in the respective circulators are connected to the respective output ports 14a, 14b. The second port (b) in the first optical circulator 16a and the first port (a) in the second optical circulator 16b are connected via the first FBG 18a. The end of the second FBG 18b is connected to the second port (b) in the second optical circulator 16b.
    • 10. 发明专利
    • THIN-FILM TRANSISTOR ARRAY
    • JPH0426827A
    • 1992-01-30
    • JP13192990
    • 1990-05-22
    • OKI ELECTRIC IND CO LTD
    • NOMOTO TSUTOMU
    • G02F1/136G02F1/1368H01L29/78H01L29/786
    • PURPOSE:To obviate the generation of a display defect in a liquid crystal display device by laminating a silicon oxide film and silicon nitride film in this order on at least a part of the oxidized parts on gate electrodes as a gate insulating film. CONSTITUTION:The gate insulating film 14 is formed of the laminate of the three-layered structure consisting of the 1st gate insulating film 14a formed by partially anodizing the parts where the thin-film transistors of gate electrodes 12 are formed and the parts intersecting with the gate electrodes 11, the 2nd gate insulating film 14b consisting of the silicon oxide formed to cover this film and the 3rd gate insulating film 14c consisting of the silicon oxide formed thereon. The probability that a pinhole is generated at the same point of the respective layers is, therefore, extremely low and even if the pinhole is generated in one film, the pinhole is usually complemented by the other film laminated on the upper layer or lower layer of the pinholed point and, therefore, the insulation defect hardly arises. The liquid crystal device which decreases the display defects is obtd. in this way.