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    • 41. 发明专利
    • Information processor
    • 信息处理器
    • JPS5745624A
    • 1982-03-15
    • JP12152380
    • 1980-09-02
    • Nec Corp
    • YAMAZAKI TAKASHI
    • G06F11/20G06F13/00G06F13/40
    • G06F13/40
    • PURPOSE:To enable transfer even at the production of failure and to detect failed position, by transferring the position of failed line at a ring shift circuit to a spare position, even if one information line is in failure, through the provision of a spare line in addition to an information line on a common bus. CONSTITUTION:A spare line 1b is provided on a common bus 1 consisting of several information lines (e.g., 4 lines)1a. Normally, a bus receiver 4 receives information, signal lines 100-103 are transmitted to internal signal lines 500-503 respectively and transmitted to a logical circuit 8. Similarly, the information from the logical circuit is given to the information lines via internal signal lines 300-303 and signal lines 400-403. If one information line is in failure, this is detected at a bus failure detecting circuit, and the connection between the signal lines and the internal signal lines 300-304 is switched with ring shift circuits 6, 7 and it is transferred to a spare line 1b with a spare signal line 1b.
    • 目的:即使发生故障,即使发生故障,也可以通过将故障线路的位置转移到备用位置,即使有一条信息线故障,也可以通过提供备用线路 除了在公共汽车上的信息线。 构成:备用线1b设置在由若干信息线(例如4条线)1a组成的公共总线1上。 通常,总线接收器4接收信息,信号线100-103分别发送到内部信号线500-503并发送到逻辑电路8.类似地,来自逻辑电路的信息经由内部信号线 300-303和信号线400-403。 如果一条信息线处于故障状态,则在总线故障检测电路处检测到这些信号线,并且信号线与内部信号线300-304之间的连接用环形移位电路6,7进行切换,并将其传送到备用线路 1b具有备用信号线1b。
    • 46. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS6464246A
    • 1989-03-10
    • JP22151087
    • 1987-09-03
    • NEC CORP
    • YAMAZAKI TAKASHI
    • C23C28/00H01L23/00H01L23/50H05K1/02H05K3/34
    • PURPOSE:To increase discharge resistance for decreasing stress applied to a semiconductor element by static discharge and to prevent breakdown of the semiconductor element, by forming a high resistance coat film at least on the tip ends of lead terminals. CONSTITUTION:A lead terminal 2 consists of a lead material 2 basically composed of Fe-Ni alloy or Cu alloy, an Ni plated film 4 covering the surface of the lead material 3, a solder film 5 formed on the Ni plated film 4 and a high resistance film 6 of a carbon paste material deposited to cover the solder film 5 at the tip end of the lead terminal 2. Since the surface of the tip end of the lead terminal 2 is covered with the high resistance film 5, a discharge passage of static charge charged within the lead terminal 2 is defined following the course from the high resistance film to a spark discharge space and to the grounding system. Accordingly, higher discharge resistance can be obtained than by prior arts.
    • 47. 发明专利
    • DIAGNOSING SYSTEM FOR INFORMATION PROCESSING SYSTEM
    • JPS63192140A
    • 1988-08-09
    • JP2431387
    • 1987-02-04
    • NEC CORP
    • YAMAZAKI TAKASHI
    • G06F11/22
    • PURPOSE:To realize the accurate diagnosis of an information processing system by reading the packing state of an information processor for each diagnosis start instruction to compare it with the packing information stored in a memory and diagnosing an information processor according to the information on said comparison. CONSTITUTION:The entire packing information on the information processors CPU 0 and 1 are read and stored in memories MM01-13 at the time of a system rise. Then the packing states of the information processors are read for each diagnosis start instruction and compared with those packing information stored in the memories MM0-13. When the coincidence is obtained from this comparison, the states of the information processors are diagnosed based on the stored packing information. While the packing discrepancy information is outputted when no coincidence is obtained from said comparison. Then the diagnosis is carried out based on a packing table as long as the packing states of the information processors are not changed in response to the answer given from a maintenance operator. While the packing table is replaced in case said packing states are changed. Then the diagnosis is carried out according to the replaced packing table. In such a way, all processors can be accurately diagnosed.
    • 48. 发明专利
    • DIAGNOSIS SYSTEM FOR INFORMATION PROCESSING SYSTEM
    • JPS62210549A
    • 1987-09-16
    • JP5316986
    • 1986-03-11
    • NEC CORP
    • YAMAZAKI TAKASHI
    • G06F11/16G06F11/22
    • PURPOSE:To execute diagnosis for a device indicated to be diagnosed lastly, by providing a host device table, and executing the diagnosis automatically from the highest-ordered device to a low-ordered device in order, when the diagnosis for the device indicated to be diagnosed. CONSTITUTION:When the diagnosis for a magnetic tape controller MTC + a magnetic tape unit MTU is indicated, the host device table is indexed, and the diagnosis for an MM is started up. When the result of the diagnosis for the MM is abnormal, an error message is outputted, then the diagnosis being completed. When the diagnosis for a main storage device MM is normal, the diagnosis for the next CPU is started up based on the host device table. And so forth, the diagnosis for the CPU, and a data channel device DCH are executed. And when the diagnosis for the DCH is normal, the diagnosis for the MTC+ MTU is started up lastly based on the host device table. When the diagnosis for the MTC+MTU is abnormal, the error message is outputted, and when it is normal, a normal completion message is outputted.
    • 49. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • JPS62172739A
    • 1987-07-29
    • JP1411086
    • 1986-01-24
    • NEC CORP
    • YAMAZAKI TAKASHI
    • H01L27/04H01L21/82H01L21/822
    • PURPOSE:To prevent insulating film breakdown by a method wherein a polycrystalline silicon film and metal film are formed on a semiconductor substrate and a diffusion layer opposite in conductivity to the semiconductor substrate, through the intermediary of an insulating film, and the diffusion layer is large enough to cover a polycrystalline silicon wiring, metal wiring, and polycrystalline silicon resistor. CONSTITUTION:A P-well 5 is formed on an N-type substrate 6 and thereon a fuse element.polycrystalline silicon resistor 2 is built with the intermediary of a silicon oxide film 4. Further, an Al electrode 1 is built through the intermediary of a silicon of a silicon oxide film 3 and a contact 7. In a circuit designed as such, with a diffusion layer lying just under a polycrystalline silicon resistor or a metal film through the intermediary of an insulating film, no short- circuiting occurs involving a substrate even in the presence of an insulating film breakdown because a short-circuiting occurs between the fuse element.polycrystalline silicon resistor and the diffusion layer isolated from the substrate by a junction. This realizes a fail-safe mechanism withstanding an interlayer insulating film breakdown.
    • 50. 发明专利
    • OPERATION CONSOLE
    • JPS62138917A
    • 1987-06-22
    • JP27988585
    • 1985-12-12
    • NEC CORP
    • YAMAZAKI TAKASHI
    • G06F9/00G06F3/02
    • PURPOSE:To eliminate intentional misoperation due to the unreturned state of key operation and accidental misoperation by making the operation of an operation console ineffective unless key operation is performed on the operation console for a certain time. CONSTITUTION:The counter of a key operation monitor circuit 20 counts with output pulses of an oscillation circuit 19. A program is so written that when key operation is effective, the key operation monitor circuit 20 is reset by a key operation monitor circuit reset line 106 through a general input/output interface circuit 18 every time key operation is performed. When 256sec are elapsed without any key operation in the key operation effective state, the key operation monitor circuit 20 overflows and sends out the 1st alarm signal 103. The program reads that out of the general input/output interface circuit 18 and resets the key operation effective state to invalidate subsequent key operation.