专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明专利

JP2006324369A WORK, PHOTOMASK, AND EXPOSURE METHOD 审中-公开
公开(公告)号：JP2006324369A
公开(公告)日：2006-11-30
申请号：JP2005144933
申请日：2005-05-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： TAKIMOTO SHINSUKE , YABE HIDETAKA
IPC分类号： H01L21/027 , G03F1/38 , G03F1/50
摘要： PROBLEM TO BE SOLVED: To provide a work where a stable and constant gap is formed with a photomask during exposure, even when there is deflection, and a resist pattern of uniform dimension is formed. SOLUTION: A resist 5 is formed on a flat exposure surface of a work 2. A spacer 1 is arranged on the resist 5. A work 2 is arranged on an exposure stage 6, and the work 2 is fixed by vacuum suction. The exposure stage 6 is raised so that the work 2 presses against a photomask 9 by way of the spacer 1. As a result, the deflected portion of the work 2 is pressed, from above by way of the spacer 1 to correct the deflection of the work 2. A uniform gap is formed between the work 2 and the photomask 9 due to the spacer 1. By exposing while a uniform gap is being maintained, a resist pattern of uniform dimensions as a whole, is formed on the exposure surface of the work 2. COPYRIGHT: (C)2007,JPO&INPIT

42. 发明专利

JP2002118044A MASK FOR X-RAY LITHOGRAPHY WITH HIGHLY ACCURATE INTEGRATED CIRCUIT PATTERN FORMED ON X-RAY ABSORPTION BODY 失效
公开(公告)号：JP2002118044A
公开(公告)日：2002-04-19
申请号：JP2000305672
申请日：2000-10-05
申请人： MITSUBISHI MATERIALS CORP , MITSUBISHI ELECTRIC CORP
发明人： ADACHI YOSHINORI , YABE HIDETAKA
IPC分类号： G03F1/22 , G03F7/20 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To provide a mask for lithography with high accuracy which can prevent displacement in a high integration circuit of a semiconductor device. SOLUTION: This mask for X-ray lithography comprises an Si frame, an artificial diamond film as a membrane laminated in order on the upper surface thereof, an antireflection film, an X-ray absorption body, and an etching mask. In this case, the reflection preventive film is formed of a platinum group metal film having a highly oriented crystal face structure in which the maximum peak (h) of a specified crystal face in an X-ray diffraction pattern satisfies the equation, w/h=0.8 or smaller (where (w) is a peak width (half-value breadth) at a half of total height of the maximum peak), when the reflection preventive film is measured from its upper surface by using an X-ray diffraction equipment.

43. 发明专利

JP2001316187A JOINING METHOD OF SILICON CARBIDE AND SILICON 失效
公开(公告)号：JP2001316187A
公开(公告)日：2001-11-13
申请号：JP2000132259
申请日：2000-05-01
申请人： MITSUBISHI ELECTRIC CORP
发明人： KITAMURA KAEKO , YABE HIDETAKA , SASAKI KEI
IPC分类号： C04B37/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a method of joining a silicon chip to a silicon carbide film, which is especially adaptable to observation and evaluation of an X-ray mask used as an original in an X-ray lithography which is one kind of processes of photoengraving for manufacturing semiconductor device and for a scalpel mask used for electron beam exposure en bloc. SOLUTION: At least either one of the silicon carbide and silicon is surface treated by the hydrofluoric acid, then the treated surface is brought into contact with another without existing an intermediate bonding layer. Especially, this joining method is adaptable for observing a section of a minute pattern which is formed by such a way that the silicon chip which is surface treated with the hydrofluoric acid is brought into contact with the rear surface of the film of a membrane mask to join them. After breaking and separating the silicon chip, a broken section of the pattern to be observed is formed.

44. 发明专利

JPH11233417A X-RAY MASK AND ITS MANUFACTURE 失效
公开(公告)号：JPH11233417A
公开(公告)日：1999-08-27
申请号：JP3561198
申请日：1998-02-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： KITAMURA KAEKO , YABE HIDETAKA , MARUMOTO KENJI
IPC分类号： G03F1/22 , G03F1/68 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To enable obtaining a pattern having no defect and having a broad dimensional precision, by providing a membrane transmitting X-rays and having a through-hole, a buried layer in the through-hole and having substantially the same transmittance as the membrane, and a X-ray absorber patterned on the membrane. SOLUTION: A membrane 2 is formed on both sides of a substrate 1, and the substrate 1 is impregnated with a solution for dissolving the substrate 1. In this case, if there is a pit 2a on the membrane 2, the surface of the substrate 1 to which the pit 2a is exposed is removed, thus forming a groove. Next, a polymer film 3 are formed on the entire surface of the membrane 2 so as to fill the groove and the pit 2a. Next, the polymer film 3 is left so as to fill only the pit 2a and the groove of the substrate 1 by etch back and polishing, thus forming a buried layer 3. After that, an anti-reflective coating 4, an X-ray absorber 5 made of a tantalum-based material, and an etching mask 6 are sequentially formed on the membrane 2, and the X-ray absorber 5 is patterned.

45. 发明专利

JPH10214774A METHOD AND DEVICE FOR FORMING X-RAY MASK 失效
公开(公告)号：JPH10214774A
公开(公告)日：1998-08-11
申请号：JP1685697
申请日：1997-01-30
申请人： MITSUBISHI ELECTRIC CORP
发明人： YABE HIDETAKA , KITAMURA KAEKO , TAKAHASHI MASAO , OKAMURA MASAMITSU , SASAKI KEI
IPC分类号： C23C14/50 , C23C14/54 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To form an X-ray absorber so that the stress of the absorber at all points may become zero or negligible values. SOLUTION: At the time of forming an X-ray absorber on a mask substrate by sputtering a target 3 while the mask substrate is rotated, a dummy mask substrate 5 is first provided instead of the mask substrate and the film of a dummy X-ray absorber 6 is formed to the extent possible to sputter on the dummy mask substrate 5. Then, the stress distribution at each location on a straight line passing through the center of the dummy X-ray absorber 6 is measured, the point having a good linear characteristic of the part of the stress distribution where the compressive stress drops toward the outer periphery of the absorber 6 is set as a desired stress distribution extent X, and the X-ray absorber is formed by positioning the mask substrate within the desired stress distribution X by using the center of the extent X as the center of rotation of the mask substrate.

46. 发明专利

JPH07135157A X-RAY MASK AS WELL AS MANUFACTURING METHOD AND DEVICE THEREOF 失效
公开(公告)号：JPH07135157A
公开(公告)日：1995-05-23
申请号：JP23318793
申请日：1993-09-20
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , YABE HIDETAKA , AYA ATSUSHI , KICHISE KOJI , MATSUBA MOTOKO , MATSUI YASUHARU
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To enable a low-stress absorber body film to be formed in high reproducibility by a method wherein the stress, etc., is to be mounted in the annealing of an X-ray absorber body so as to determine the annealing finish time in view of the monitored results. CONSTITUTION:When a substrate with an X-ray absorber body formed thereon is heated, the stress thereof changes from A to B due to the difference is the thermal expansion coefficients of a substrate material and an absorber body material. When the heating temperature is further raised, the stress starts to separate from the line A heater B. Accordingly, the line D-D' in parallel with the line A heater B passing through the annealing finish time D at the room temperature nullifying the stress or the physical quantity correlating to the stress is previously settled so that the objective state of the annealing is finish time may be brought about by monitoring the stress even after passing through the point B so as to stop the annealing when the X-ray absorber body reaches the point intersecting with the line D-D' passing the point D and in parallel with the line A-B for cooling the substrate down to a room temperature. Through these procedures, the X-ray absorber body film can be formed in high reproducibility with low stress.

47. 发明专利

JPH0629193A X-RAY MASK 失效
公开(公告)号：JPH0629193A
公开(公告)日：1994-02-04
申请号：JP18374092
申请日：1992-07-10
申请人： MITSUBISHI MATERIALS CORP , MITSUBISHI ELECTRIC CORP
发明人： KIKUCHI NORIBUMI , YAMASHITA HIROAKI , MATSUI YASUTSUGU , MARUMOTO KENJI , YABE HIDETAKA
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To enhance a positional accuracy of an X-ray mask and to obtain a fresh pattern image by providing an X-ray transmitting membrane containing a diamond microcrystal containing conductive impurity and an X-ray absorber provided along a predetermined pattern on the membrane. CONSTITUTION:After a membrane film 6 for transmitting an X-ray is formed on a silicon substrate 1 through an X-ray reflection preventive film 7, an X-ray absorber 3 in which a fine pattern 3a for semiconductor is formed is formed, and a supporting frame 4 having high rigidity is formed. The membrane 6 is formed of a diamond microcrystal in which boron, etc., is added to exhibit conductivity. Thus, since an X-ray mask having the membrane having high rigidity and conductivity is obtained, the fine pattern is not deviated due to influence of a stress, and decreases in a distortion.visibility due to local charge-up can be prevented even at the time of pattern lithography, circuit inspection, X-ray lithography with an electron beam.

48. 发明专利

JPH05315229A X-RAY MASK 失效
公开(公告)号：JPH05315229A
公开(公告)日：1993-11-26
申请号：JP11347692
申请日：1992-05-06
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , YABE HIDETAKA , HASHIMOTO MOTOKO , MATSUI YASUTSUGU
IPC分类号： G03F1/00 , G03F1/22 , H01L21/027 , G03F1/16
摘要： PURPOSE:To provide an antireflection film with many functions such as a flattening function, a conductive function, an etching stopper function and the like by a method wherein different antireflection films are formed or antireflection films which are composed of multilayer transparent thin films are formed on both sides of an X-ray transmitting substrate. CONSTITUTION:An antireflection film 51 is an antireflection film which is formed on the opposite side at a pattern by an absorber 3 of an SiC membrane 2; it is composed of SiO2 whose refractive index is about 1.4 and whose thickness is 100nm. An antireflection film 53 is an antireflection film which is formed on the pattern formation side at the pattern by the absorber 3 of the SiC membrane 2; it is composer of an indium-tin oxide (ITO) whose refractive index is about 2 and whose thickness is 70nm. Regarding the antireflection films 51, 53 on both faces, their material and their thickness are different, but their optical thickness is nearly identical. The ITO film 53 is former by a sputtering operation or after an organometallic salt solution has been coated and baked. The SiO2 film 51 is formed by using one out of a vapor deposition method, a sputtering method and a spin-on-glass coating and baking method.

49. 发明专利

JPH05291123A 失效
公开(公告)号：JPH05291123A
公开(公告)日：1993-11-05
申请号：JP9430992
申请日：1992-04-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： YABE HIDETAKA , MARUMOTO KENJI , AYA ATSUSHI
IPC分类号： G03F1/22 , G03F7/20 , H01L21/027 , G03F1/16
摘要： PURPOSE:To prevent deterioration of durability and position strain of a membrane, by a method wherein resistance to the membrane is reduced by decreasing air resistance by making gas between a mask and a wafer rapidly escape at the time of X-ray exposure. CONSTITUTION:Holes 4, 5, 6 or trenches are formed in at least one out of a support ring 1 and a wafer 2 retaining a membrane 3, in an X-ray mask.

50. 发明专利

JPH05165198A PRODUCTION OF X-RAY MASK 失效
公开(公告)号：JPH05165198A
公开(公告)日：1993-06-29
申请号：JP33512091
申请日：1991-12-18
申请人： MITSUBISHI ELECTRIC CORP
发明人： MARUMOTO KENJI , AYA ATSUSHI , YABE HIDETAKA , HASHIMOTO MOTOKO , MATSUI YASUTSUGU
IPC分类号： G03F1/22 , H01L21/027
摘要： PURPOSE:To enable the etching of the thin films of a membrane material so as to simplify the process by utilizing a supporting frame as a mask and to simplify process by joining a wafer to the supporting frame before etching the thin films of the membrane material. CONSTITUTION:The thin films 2a of the membrane material are formed by a chemical vapor deposition method on both surfaces of the silicon wafer 1. The wafer 1 is then joined to the supporting frame 4. The thin film 2a of the back surface is dry etched with the supporting frame 4 as a mask to form the membrane 2. The wafer 1 is thereafter subjected to back etching and finally circuit patterns 3 are formed on the membrane 2. The joining of the supporting frame is executed before the back etching of the wafer 1 and the etching of the thin films 2a. Since the supporting frame 4 is utilized as the mask, the need for special masking for the back etching of the wafer 1 and the etching of the thin films 2a is eliminated.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式